Nazila HARATIPOUR

Person

Hillsboro, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Low resistance approaches for fabricating contacts and the resultin...
- Patent number 12,119,387
- Issue date Oct 15, 2024
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric capacitors and methods of fabrication
- Patent number 12,048,165
- Issue date Jul 23, 2024
- Intel Corporation
- Nazila Haratipour
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferroelectric or anti-ferroelectric trench capacitor with spacers f...
- Patent number 12,040,378
- Issue date Jul 16, 2024
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cells with ferroelectric capacitors separate from transistor...
- Patent number 11,980,037
- Issue date May 7, 2024
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Halogen treatment for NMOS contact resistance improvement
- Patent number 11,923,290
- Issue date Mar 5, 2024
- Intel Corporation
- Siddharth Chouksey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MFM capacitor and process for forming such
- Patent number 11,901,400
- Issue date Feb 13, 2024
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structures with a metal oxide contact buffer and a metho...
- Patent number 11,843,058
- Issue date Dec 12, 2023
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical architecture of thin film transistors
- Patent number 11,843,054
- Issue date Dec 12, 2023
- Intel Corporation
- Van H. Le
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transistors for ultra-dense logic and memory applications
- Patent number 11,777,029
- Issue date Oct 3, 2023
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MFM capacitor with multilayered oxides and metals and processes for...
- Patent number 11,769,789
- Issue date Sep 26, 2023
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multilayer high-k gate dielectric for a high performance logic tran...
- Patent number 11,742,407
- Issue date Aug 29, 2023
- Intel Corporation
- Seung Hoon Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Applications of back-end-of-line (BEOL) capacitors in compute-in-me...
- Patent number 11,727,260
- Issue date Aug 15, 2023
- Intel Corporation
- Abhishek Sharma
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Thin film transistors having U-shaped features
- Patent number 11,721,735
- Issue date Aug 8, 2023
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench capacitor with extended dielectric layer
- Patent number 11,626,475
- Issue date Apr 11, 2023
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra-dense ferroelectric memory with self-aligned patterning
- Patent number 11,532,439
- Issue date Dec 20, 2022
- Intel Corporation
- Chia-Ching Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Contact electrodes for vertical thin-film transistors
- Patent number 11,527,656
- Issue date Dec 13, 2022
- Intel Corporation
- Van H. Le
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial layers on contact electrodes for thin- film transistors
- Patent number 11,522,060
- Issue date Dec 6, 2022
- Intel Corporation
- Seung Hoon Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin-film transistors with vertical channels
- Patent number 11,450,750
- Issue date Sep 20, 2022
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical thin-film transistors between metal layers
- Patent number 11,417,770
- Issue date Aug 16, 2022
- Intel Corporation
- Abhishek Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact electrodes and dielectric structures for thin film transistors
- Patent number 11,398,560
- Issue date Jul 26, 2022
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Relaxor ferroelectric capacitors and methods of fabrication
- Patent number 11,316,027
- Issue date Apr 26, 2022
- Intel Corporation
- Sou-Chi Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical thin film transistors having self-aligned contacts
- Patent number 11,296,229
- Issue date Apr 5, 2022
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film transistors having U-shaped features
- Patent number 11,264,512
- Issue date Mar 1, 2022
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structures with a metal oxide contact buffer
- Patent number 11,171,243
- Issue date Nov 9, 2021
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Applications of back-end-of-line (BEOL) capacitors in compute-in-me...
- Patent number 11,138,499
- Issue date Oct 5, 2021
- Intel Corporation
- Abhishek Sharma
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Ferroelectric or anti-ferroelectric trench capacitor with spacers f...
- Patent number 11,063,131
- Issue date Jul 13, 2021
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FERROELECTRIC CAPACITORS AND METHODS OF FABRICATION
- Publication number 20240373644
- Publication date Nov 7, 2024
- Intel Corporation
- Nazila Haratipour
- G11 - INFORMATION STORAGE
Information Patent Application
SELF-ALIGNED PATTERNING OF PLATE LINES IN THREE-DIMENSIONAL FERROEL...
- Publication number 20240114693
- Publication date Apr 4, 2024
- Intel Corporation
- Christopher M. Neumann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE, METHOD AND SYSTEM TO PROVIDE A RANDOM ACCESS MEMORY WITH A...
- Publication number 20240112730
- Publication date Apr 4, 2024
- Intel Corporation
- Sou-Chi Chang
- G11 - INFORMATION STORAGE
Information Patent Application
SELECTIVE FERROELECTRIC DEPLOYMENT FOR SINGLE-TRANSISTOR, MULTIPLE-...
- Publication number 20240112714
- Publication date Apr 4, 2024
- Intel Corporation
- Nazila Haratipour
- G11 - INFORMATION STORAGE
Information Patent Application
HIGH ENDURANCE SUPER-LATTICE ANTI-FERROELECTRIC CAPACITORS
- Publication number 20240114695
- Publication date Apr 4, 2024
- Intel Corporation
- Sou-Chi Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR STRUCTURE EMBEDDED WITHIN SOURCE OR DRAIN REGION
- Publication number 20240113101
- Publication date Apr 4, 2024
- Intel Corporation
- Sourav Dutta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INVERTED FERROELECTRIC AND ANTIFERROLECETRIC CAPACITORS
- Publication number 20240114692
- Publication date Apr 4, 2024
- Intel Corporation
- Nazila Haratipour
- G11 - INFORMATION STORAGE
Information Patent Application
IMPROVED REPLACEMENT ELECTRODE PROCESS FOR 3D FERROELECTRIC MEMORY
- Publication number 20240114696
- Publication date Apr 4, 2024
- Intel Corporation
- Christopher Neumann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC CAPACITOR WITHIN BACKSIDE INTERCONNECT
- Publication number 20240114694
- Publication date Apr 4, 2024
- Intel Corporation
- Sourav Dutta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURES WITH A METAL OXIDE CONTACT BUFFER AND A METHO...
- Publication number 20240105854
- Publication date Mar 28, 2024
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES WITH CONTACTS USING NITRIDIZED MOLYBDENUM
- Publication number 20240105508
- Publication date Mar 28, 2024
- Intel Corporation
- Jitendra Kumar Jha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW-RESISTANCE AND THERMALLY STABLE CONTACTS WITH PHOSPHIDE OR ARSE...
- Publication number 20240006506
- Publication date Jan 4, 2024
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW-RESISTANCE AND THERMALLY STABLE CONTACTS WITH BORIDE, INDIUM, O...
- Publication number 20240006533
- Publication date Jan 4, 2024
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPPING SOURCE AND DRAIN REGIONS OF TRANSISTORS TO PREVENT DIFFUSIO...
- Publication number 20240006488
- Publication date Jan 4, 2024
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE AND DRAIN REFRACTORY METAL CAP
- Publication number 20240006494
- Publication date Jan 4, 2024
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE OR DRAIN METALLIZATION PRIOR TO CONTACT FORMATION IN STACKED...
- Publication number 20230197777
- Publication date Jun 22, 2023
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TITANIUM CONTACT FORMATION
- Publication number 20230193473
- Publication date Jun 22, 2023
- Intel Corporation
- Debaleena Nandi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
CONTACT OVER ACTIVE GATE STRUCTURES WITH TRENCH CONTACT LAYERS FOR...
- Publication number 20230197804
- Publication date Jun 22, 2023
- Nazila HARATIPOUR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-REACTIVE EPI CONTACT FOR STACKED TRANSISTORS
- Publication number 20230197800
- Publication date Jun 22, 2023
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL CARBON BARRIER REGION FOR NMOS DEVICE CONTACTS
- Publication number 20230187553
- Publication date Jun 15, 2023
- Intel Corporation
- Arnab Sen Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS WITH HIGH DIELECTRIC CONSTANT INTERFACIAL LAYERING
- Publication number 20230097184
- Publication date Mar 30, 2023
- Intel Corporation
- Sarah ATANASOV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES WITH TRANSITION METAL DICHALCOGENI...
- Publication number 20230101604
- Publication date Mar 30, 2023
- Intel Corporation
- Ashish Verma PENUMATCHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL FERROELECTRIC RANDOM ACCESS MEMORY (3D FRAM) WITH...
- Publication number 20230101111
- Publication date Mar 30, 2023
- Intel Corporation
- Shriram SHIVARAMAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICES WITH REDUCED READ DISTURBANCE EFFECTS
- Publication number 20230100860
- Publication date Mar 30, 2023
- Intel Corporation
- Sou-Chi CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC THREE-DIMENSIONAL MEMORY
- Publication number 20230097641
- Publication date Mar 30, 2023
- Intel Corporation
- Christopher M. NEUMANN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC RANDOM ACCESS MEMORY (FRAM) DEVICES WITH ENHANCED CAP...
- Publication number 20230097736
- Publication date Mar 30, 2023
- Intel Corporation
- Shriram SHIVARAMAN
- G11 - INFORMATION STORAGE
Information Patent Application
THIN FILM TRANSISTORS HAVING SEMICONDUCTOR STRUCTURES INTEGRATED WI...
- Publication number 20230090093
- Publication date Mar 23, 2023
- Intel Corporation
- Ashish Verma PENUMATCHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW TEMPERATURE, HIGH GERMANIUM, HIGH BORON SIGE:B PEPI WITH A SILI...
- Publication number 20230087399
- Publication date Mar 23, 2023
- Intel Corporation
- Debaleena NANDI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW GERMANIUM, HIGH BORON SILICON RICH CAPPING LAYER FOR PMOS CONTA...
- Publication number 20220416050
- Publication date Dec 29, 2022
- Intel Corporation
- Debaleena NANDI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CO-DEPOSITION OF TITANIUM AND SILICON FOR IMPROVED SILICON GERMANIU...
- Publication number 20220416032
- Publication date Dec 29, 2022
- Intel Corporation
- Debaleena Nandi
- H01 - BASIC ELECTRIC ELEMENTS

Nazila HARATIPOUR

Person

Patents Grantslast 30 patents

Low resistance approaches for fabricating contacts and the resultin...

Ferroelectric capacitors and methods of fabrication

Ferroelectric or anti-ferroelectric trench capacitor with spacers f...

Memory cells with ferroelectric capacitors separate from transistor...

Halogen treatment for NMOS contact resistance improvement

MFM capacitor and process for forming such

Transistor structures with a metal oxide contact buffer and a metho...

Vertical architecture of thin film transistors

Vertical transistors for ultra-dense logic and memory applications

MFM capacitor with multilayered oxides and metals and processes for...

Multilayer high-k gate dielectric for a high performance logic tran...

Applications of back-end-of-line (BEOL) capacitors in compute-in-me...

Thin film transistors having U-shaped features

Trench capacitor with extended dielectric layer

Ultra-dense ferroelectric memory with self-aligned patterning

Contact electrodes for vertical thin-film transistors

Epitaxial layers on contact electrodes for thin- film transistors

Thin-film transistors with vertical channels

Vertical thin-film transistors between metal layers

Contact electrodes and dielectric structures for thin film transistors

Relaxor ferroelectric capacitors and methods of fabrication

Vertical thin film transistors having self-aligned contacts

Thin film transistors having U-shaped features

Transistor structures with a metal oxide contact buffer

Applications of back-end-of-line (BEOL) capacitors in compute-in-me...

Ferroelectric or anti-ferroelectric trench capacitor with spacers f...

Patents Applicationslast 30 patents

FERROELECTRIC CAPACITORS AND METHODS OF FABRICATION

SELF-ALIGNED PATTERNING OF PLATE LINES IN THREE-DIMENSIONAL FERROEL...

DEVICE, METHOD AND SYSTEM TO PROVIDE A RANDOM ACCESS MEMORY WITH A...

SELECTIVE FERROELECTRIC DEPLOYMENT FOR SINGLE-TRANSISTOR, MULTIPLE-...

HIGH ENDURANCE SUPER-LATTICE ANTI-FERROELECTRIC CAPACITORS

CAPACITOR STRUCTURE EMBEDDED WITHIN SOURCE OR DRAIN REGION

INVERTED FERROELECTRIC AND ANTIFERROLECETRIC CAPACITORS

IMPROVED REPLACEMENT ELECTRODE PROCESS FOR 3D FERROELECTRIC MEMORY

FERROELECTRIC CAPACITOR WITHIN BACKSIDE INTERCONNECT

TRANSISTOR STRUCTURES WITH A METAL OXIDE CONTACT BUFFER AND A METHO...

INTEGRATED CIRCUIT DEVICES WITH CONTACTS USING NITRIDIZED MOLYBDENUM

LOW-RESISTANCE AND THERMALLY STABLE CONTACTS WITH PHOSPHIDE OR ARSE...

LOW-RESISTANCE AND THERMALLY STABLE CONTACTS WITH BORIDE, INDIUM, O...

CAPPING SOURCE AND DRAIN REGIONS OF TRANSISTORS TO PREVENT DIFFUSIO...

SOURCE AND DRAIN REFRACTORY METAL CAP

SOURCE OR DRAIN METALLIZATION PRIOR TO CONTACT FORMATION IN STACKED...

TITANIUM CONTACT FORMATION

CONTACT OVER ACTIVE GATE STRUCTURES WITH TRENCH CONTACT LAYERS FOR...

NON-REACTIVE EPI CONTACT FOR STACKED TRANSISTORS

METAL CARBON BARRIER REGION FOR NMOS DEVICE CONTACTS

INTEGRATED CIRCUITS WITH HIGH DIELECTRIC CONSTANT INTERFACIAL LAYERING

THREE-DIMENSIONAL MEMORY DEVICES WITH TRANSITION METAL DICHALCOGENI...

THREE-DIMENSIONAL FERROELECTRIC RANDOM ACCESS MEMORY (3D FRAM) WITH...

MEMORY DEVICES WITH REDUCED READ DISTURBANCE EFFECTS

FERROELECTRIC THREE-DIMENSIONAL MEMORY

FERROELECTRIC RANDOM ACCESS MEMORY (FRAM) DEVICES WITH ENHANCED CAP...

THIN FILM TRANSISTORS HAVING SEMICONDUCTOR STRUCTURES INTEGRATED WI...

LOW TEMPERATURE, HIGH GERMANIUM, HIGH BORON SIGE:B PEPI WITH A SILI...

LOW GERMANIUM, HIGH BORON SILICON RICH CAPPING LAYER FOR PMOS CONTA...

CO-DEPOSITION OF TITANIUM AND SILICON FOR IMPROVED SILICON GERMANIU...