Nestor A. Bojarczuk

Person

Poughkeepsie, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
In situ nitrogen doping of co-evaporated copper-zinc-tin-sulfo-sele...
- Patent number 10,304,979
- Issue date May 28, 2019
- International Business Machines Corporation
- Nestor A. Bojarczuk
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Spectrometer insert for measuring temperature-dependent optical pro...
- Patent number 9,939,366
- Issue date Apr 10, 2018
- International Business Machines Corporation
- Nestor A. Bojarczuk
- G01 - MEASURING TESTING
Information Patent Grant
In situ nitrogen doping of co-evaporated copper-zinc-tin-sulfo-sele...
- Patent number 9,911,879
- Issue date Mar 6, 2018
- International Business Machines Corporation
- Nestor A. Bojarczuk
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Spectrometer insert for measuring temperature-dependent optical pro...
- Patent number 9,599,513
- Issue date Mar 21, 2017
- International Business Machines Corporation
- Nestor A. Bojarczuk
- G01 - MEASURING TESTING
Information Patent Grant
Spectrometer insert for measuring temperature-dependent optical pro...
- Patent number 9,417,126
- Issue date Aug 16, 2016
- International Business Machines Corporation
- Nestor A. Bojarczuk
- G01 - MEASURING TESTING
Information Patent Grant
Epitaxial growth of CZT(S,Se) on silicon
- Patent number 9,287,426
- Issue date Mar 15, 2016
- International Business Machines Corporation
- Nestor A. Bojarczuk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film solar cells
- Patent number 8,987,590
- Issue date Mar 24, 2015
- International Business Machines Corporation
- Nestor A. Bojarczuk
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Thin film solar cells
- Patent number 8,680,393
- Issue date Mar 25, 2014
- International Business Machines Corporation
- Nestor A. Bojarczuk
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Method of forming switching device having a molybdenum oxynitride m...
- Patent number 8,518,766
- Issue date Aug 27, 2013
- International Business Machines Corporation
- Nestor A. Bojarczuk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Aluminum nitride and aluminum oxide/aluminum nitride heterostructur...
- Patent number 6,831,339
- Issue date Dec 14, 2004
- International Business Machines Corporation
- Nestor A. Bojarczuk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Engineered high dielectric constant oxide and oxynitride heterostru...
- Patent number 6,541,079
- Issue date Apr 1, 2003
- International Business Machines Corporation
- Nestor A. Bojarczuk
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for forming dielectric stack without interfacial layer
- Patent number 6,528,374
- Issue date Mar 4, 2003
- International Business Machines Corporation
- Nestor A. Bojarczuk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective growth of ferromagnetic films
- Patent number 6,333,067
- Issue date Dec 25, 2001
- International Business Machines Corporation
- Nestor A. Bojarczuk
- G11 - INFORMATION STORAGE
Information Patent Grant
Selective growth of ferromagnetic films for magnetic memory, storag...
- Patent number 6,299,991
- Issue date Oct 9, 2001
- International Business Machines Corporation
- Nestor A. Bojarczuk
- G11 - INFORMATION STORAGE
Information Patent Grant
Metal embedded passivation layer structure for microelectronic inte...
- Patent number 6,255,671
- Issue date Jul 3, 2001
- International Business Machines Corporation
- Nestor Alexander Bojarczuk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Product and process for forming a semiconductor structure on a host...
- Patent number 6,210,479
- Issue date Apr 3, 2001
- International Business Machines Corporation
- Nestor A. Bojarczuk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic silicon-based nitride display device
- Patent number 6,120,909
- Issue date Sep 19, 2000
- International Business Machines Corporation
- Nestor A. Bojarczuk
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Grant
Hybrid organic-inorganic semiconductor light emitting diodes
- Patent number 5,898,185
- Issue date Apr 27, 1999
- International Business Machines Corporation
- Nestor A. Bojarczuk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid organic-inorganic semiconductor light emitting diodes
- Patent number 5,895,932
- Issue date Apr 20, 1999
- International Business Machines Corporation
- Nestor A. Bojarczuk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Column III metal nitride films as phase change media for optical re...
- Patent number 5,874,147
- Issue date Feb 23, 1999
- International Business Machines Corporation
- Nestor Alexander Bojarczuk
- G11 - INFORMATION STORAGE
Information Patent Grant
Composite magneto-optic memory and media
- Patent number 5,793,711
- Issue date Aug 11, 1998
- International Business Machines Corporation
- Nestor Alexander Bojarczuk
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Composite magneto-optic memory and media
- Patent number 5,612,131
- Issue date Mar 18, 1997
- International Business Machines Corporation
- Nestor A. Bojarczuk
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
Spectrometer Insert for Measuring Temperature-Dependent Optical Pro...
- Publication number 20170138841
- Publication date May 18, 2017
- International Business Machines Corporation
- Nestor A. Bojarczuk
- G01 - MEASURING TESTING
Information Patent Application
Spectrometer Insert for Measuring Temperature-Dependent Optical Pro...
- Publication number 20160334273
- Publication date Nov 17, 2016
- International Business Machines Corporation
- Nestor A. Bojarczuk
- G01 - MEASURING TESTING
Information Patent Application
IN SITU NITROGEN DOPING OF CO-EVAPORATED COPPER-ZINC-TIN-SULFO-SELE...
- Publication number 20160225927
- Publication date Aug 4, 2016
- International Business Machines Corporation
- Nestor A. Bojarczuk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IN SITU NITROGEN DOPING OF CO-EVAPORATED COPPER-ZINC-TIN-SULFO-SELE...
- Publication number 20160225939
- Publication date Aug 4, 2016
- International Business Machines Corporation
- Nestor A. Bojarczuk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxial Growth of CZT(S,Se) on Silicon
- Publication number 20160093755
- Publication date Mar 31, 2016
- International Business Machines Corporation
- Nestor A. Bojarczuk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Spectrometer Insert for Measuring Temperature-Dependent Optical Pro...
- Publication number 20150377702
- Publication date Dec 31, 2015
- International Business Machines Corporation
- Nestor A. Bojarczuk
- G01 - MEASURING TESTING
Information Patent Application
DIELECTRIC FOR CARBON-BASED NANO-DEVICES
- Publication number 20140113416
- Publication date Apr 24, 2014
- International Business Machines Corporation
- Nestor A. BOJARCZUK
- B82 - NANO-TECHNOLOGY
Information Patent Application
THIN FILM SOLAR CELLS
- Publication number 20140038344
- Publication date Feb 6, 2014
- International Business Machines Corporation
- Nestor A. Bojarczuk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THIN FILM SOLAR CELLS
- Publication number 20140034118
- Publication date Feb 6, 2014
- International Business Machines Corporation
- Nestor A. Bojarczuk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIELECTRIC FOR CARBON-BASED NANO-DEVICES
- Publication number 20140001440
- Publication date Jan 2, 2014
- International Business Machines Corporation
- Nestor A. BOJARCZUK
- B82 - NANO-TECHNOLOGY
Information Patent Application
SWITCHING DEVICE HAVING A MOLYBDENUM OXYNITRIDE METAL GATE
- Publication number 20120270385
- Publication date Oct 25, 2012
- International Business Machines Corporation
- Nestor A. Bojarczuk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fabrication of CuZnSn(S,Se) Thin Film Solar Cell with Valve Control...
- Publication number 20120100663
- Publication date Apr 26, 2012
- International Business Machines Corporation
- Nestor A. Bojarczuk
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Using Diffusion Barrier Layer for CuZnSn(S,Se) Thin Film Solar Cell
- Publication number 20120097234
- Publication date Apr 26, 2012
- International Business Machines Corporation
- Nestor A. Bojarczuk
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
SWITCHING DEVICE HAVING A MOLYBDENUM OXYNITRIDE METAL GATE
- Publication number 20110042759
- Publication date Feb 24, 2011
- International Business Machines Corporation
- Nestor A. Bojarczuk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STABILIZATION OF FLATBAND VOLTAGES AND THRESHOLD VOLTAGES IN HAFNIU...
- Publication number 20080258198
- Publication date Oct 23, 2008
- International Business Machines Corporation
- Nestor A. Bojarczuk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selective implementation of barrier layers to achieve threshold vol...
- Publication number 20060275977
- Publication date Dec 7, 2006
- International Business Machines Corporation
- Nestor A. Bojarczuk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Stabilization of flatband voltages and threshold voltages in hafniu...
- Publication number 20060244035
- Publication date Nov 2, 2006
- International Business Machines Corporation
- Nestor A. Bojarczuk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitrogen-containing field effect transistor gate stack containing a...
- Publication number 20060102968
- Publication date May 18, 2006
- International Business Machines Corporation
- Nestor A. Bojarczuk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selective implementation of barrier layers to achieve threshold vol...
- Publication number 20050269634
- Publication date Dec 8, 2005
- International Business Machines Corporation
- Nestor A. Bojarczuk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selective implementation of barrier layers to achieve threshold vol...
- Publication number 20050269635
- Publication date Dec 8, 2005
- International Business Machines Corporation
- Nestor A. Bojarczuk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming lattice-matched structure on silicon and structur...
- Publication number 20050266663
- Publication date Dec 1, 2005
- International Business Machines Corporation
- Nestor Alexander Bojarczuk
- B82 - NANO-TECHNOLOGY
Information Patent Application
Threshold and flatband voltage stabilization layer for field effect...
- Publication number 20050258491
- Publication date Nov 24, 2005
- International Business Machines Corporation
- Nestor A. Bojarczuk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Complementary metal oxide semiconductor (CMOS) gate stack with high...
- Publication number 20050156257
- Publication date Jul 21, 2005
- International Business Machines Corporation
- Nestor Alexander Bojarczuk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming lattice-matched structure on silicon and structur...
- Publication number 20050095815
- Publication date May 5, 2005
- International Business Machines Corporation
- Nestor Alexander Bojarczuk
- B82 - NANO-TECHNOLOGY
Information Patent Application
Aluminum nitride and aluminum oxide/aluminum nitride heterostructur...
- Publication number 20050087821
- Publication date Apr 28, 2005
- International Business Machines Corporation
- Nestor A. Bojarczuk,
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Rare earth metal oxide memory element based on charge storage and m...
- Publication number 20050047252
- Publication date Mar 3, 2005
- International Business Machines Corporation
- Nestor A. Bojarczuk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Rare earth metal oxide memory element based on charge storage and m...
- Publication number 20030134438
- Publication date Jul 17, 2003
- Nestor A. Bojarczuk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for forming dielectric stack without interfacial layer
- Publication number 20030104666
- Publication date Jun 5, 2003
- International Business Machines Corporation
- Nestor A. Bojarczuk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming lattice-matched structure on silicon and structur...
- Publication number 20030008520
- Publication date Jan 9, 2003
- International Business Machines Corporation
- Nestor Alexander Bojarczuk
- B82 - NANO-TECHNOLOGY
Information Patent Application
Method of forming lattice-matched structure on silicon and structur...
- Publication number 20030008521
- Publication date Jan 9, 2003
- International Business Machines Corporation
- Nestor Alexander Bojarczuk
- B82 - NANO-TECHNOLOGY

Nestor A. Bojarczuk

Person

Patents Grantslast 30 patents

In situ nitrogen doping of co-evaporated copper-zinc-tin-sulfo-sele...

Spectrometer insert for measuring temperature-dependent optical pro...

In situ nitrogen doping of co-evaporated copper-zinc-tin-sulfo-sele...

Spectrometer insert for measuring temperature-dependent optical pro...

Spectrometer insert for measuring temperature-dependent optical pro...

Epitaxial growth of CZT(S,Se) on silicon

Thin film solar cells

Thin film solar cells

Method of forming switching device having a molybdenum oxynitride m...

Aluminum nitride and aluminum oxide/aluminum nitride heterostructur...

Engineered high dielectric constant oxide and oxynitride heterostru...

Method for forming dielectric stack without interfacial layer

Selective growth of ferromagnetic films

Selective growth of ferromagnetic films for magnetic memory, storag...

Metal embedded passivation layer structure for microelectronic inte...

Product and process for forming a semiconductor structure on a host...

Monolithic silicon-based nitride display device

Hybrid organic-inorganic semiconductor light emitting diodes

Hybrid organic-inorganic semiconductor light emitting diodes

Column III metal nitride films as phase change media for optical re...

Composite magneto-optic memory and media

Composite magneto-optic memory and media

Patents Applicationslast 30 patents

Spectrometer Insert for Measuring Temperature-Dependent Optical Pro...

Spectrometer Insert for Measuring Temperature-Dependent Optical Pro...

IN SITU NITROGEN DOPING OF CO-EVAPORATED COPPER-ZINC-TIN-SULFO-SELE...

IN SITU NITROGEN DOPING OF CO-EVAPORATED COPPER-ZINC-TIN-SULFO-SELE...

Epitaxial Growth of CZT(S,Se) on Silicon

Spectrometer Insert for Measuring Temperature-Dependent Optical Pro...

DIELECTRIC FOR CARBON-BASED NANO-DEVICES

THIN FILM SOLAR CELLS

THIN FILM SOLAR CELLS

DIELECTRIC FOR CARBON-BASED NANO-DEVICES

SWITCHING DEVICE HAVING A MOLYBDENUM OXYNITRIDE METAL GATE

Fabrication of CuZnSn(S,Se) Thin Film Solar Cell with Valve Control...

Using Diffusion Barrier Layer for CuZnSn(S,Se) Thin Film Solar Cell

SWITCHING DEVICE HAVING A MOLYBDENUM OXYNITRIDE METAL GATE

STABILIZATION OF FLATBAND VOLTAGES AND THRESHOLD VOLTAGES IN HAFNIU...

Selective implementation of barrier layers to achieve threshold vol...

Stabilization of flatband voltages and threshold voltages in hafniu...

Nitrogen-containing field effect transistor gate stack containing a...

Selective implementation of barrier layers to achieve threshold vol...

Selective implementation of barrier layers to achieve threshold vol...

Method of forming lattice-matched structure on silicon and structur...

Threshold and flatband voltage stabilization layer for field effect...

Complementary metal oxide semiconductor (CMOS) gate stack with high...

Method of forming lattice-matched structure on silicon and structur...

Aluminum nitride and aluminum oxide/aluminum nitride heterostructur...

Rare earth metal oxide memory element based on charge storage and m...

Rare earth metal oxide memory element based on charge storage and m...

Method for forming dielectric stack without interfacial layer

Method of forming lattice-matched structure on silicon and structur...

Method of forming lattice-matched structure on silicon and structur...