Nick Lindert

Person

Beaverton, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Dual self-aligned gate endcap (SAGE) architectures
- Patent number 11,688,792
- Issue date Jun 27, 2023
- Intel Corporation
- Sairam Subramanian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Unidirectional self-aligned gate endcap (SAGE) architectures with g...
- Patent number 11,605,632
- Issue date Mar 14, 2023
- Intel Corporation
- Walid M. Hafez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cost effective precision resistor using blocked DEPOP method in sel...
- Patent number 11,562,999
- Issue date Jan 24, 2023
- Intel Corporation
- Roman Olac-Vaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin trim plug structures having an oxidation catalyst layer surroun...
- Patent number 11,538,937
- Issue date Dec 27, 2022
- Intel Corporation
- Leonard Guler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Unidirectional self-aligned gate endcap (SAGE) architectures with g...
- Patent number 11,217,582
- Issue date Jan 4, 2022
- Intel Corporation
- Walid M. Hafez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual self-aligned gate endcap (SAGE) architectures
- Patent number 11,205,708
- Issue date Dec 21, 2021
- Intel Corporation
- Sairam Subramanian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned build-up of topographic features
- Patent number 10,541,143
- Issue date Jan 21, 2020
- Intel Corporation
- Leonard P. Guler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device with gate control layer undercutting the gate die...
- Patent number 10,109,628
- Issue date Oct 23, 2018
- Intel Corporation
- Anand S. Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique for filling high aspect ratio, narrow structures with mul...
- Patent number 9,972,541
- Issue date May 15, 2018
- Intel Corporation
- Joseph M. Steigerwald
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal-insulator-metal (MIM) capacitor with insulator stack having a...
- Patent number 9,691,839
- Issue date Jun 27, 2017
- Intel Corporation
- Nick Lindert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having a capacitor and metal wiring integra...
- Patent number 9,577,030
- Issue date Feb 21, 2017
- Intel Corporation
- Nick Lindert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of DRAM capacitor among metal interconnect
- Patent number 9,565,766
- Issue date Feb 7, 2017
- Intel Corporation
- Nick Lindert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded memory device having MIM capacitor formed in excavated str...
- Patent number 9,224,794
- Issue date Dec 29, 2015
- Intel Corporation
- Steven Keating
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Rectangular capacitors for dynamic random access (DRAM) and dual-pa...
- Patent number 9,076,758
- Issue date Jul 7, 2015
- Intel Corporation
- Nick Lindert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Penetrating implant for forming a semiconductor device
- Patent number 8,741,720
- Issue date Jun 3, 2014
- Intel Corporation
- Giuseppe Curello
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
6F2 DRAM cell
- Patent number 8,519,462
- Issue date Aug 27, 2013
- Intel Corporation
- Yih Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitor with recessed plate portion for dynamic random access mem...
- Patent number 8,502,293
- Issue date Aug 6, 2013
- Intel Corporation
- Nick Lindert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods to form memory devices having a capacitor with a recessed e...
- Patent number 8,441,097
- Issue date May 14, 2013
- Intel Corporation
- Joseph M. Steigerwald
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded memory device having MIM capacitor formed in excavated str...
- Patent number 8,441,057
- Issue date May 14, 2013
- Intel Corporation
- Steven J. Keating
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Penetrating implant for forming a semiconductor device
- Patent number 8,426,927
- Issue date Apr 23, 2013
- Intel Corporation
- Giuseppe Curello
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Metal gate transistors with raised source and drain regions formed...
- Patent number 8,344,452
- Issue date Jan 1, 2013
- Intel Corporation
- Nick Lindert
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Recessed channel array transistor (RCAT) in replacement metal gate...
- Patent number 8,030,197
- Issue date Oct 4, 2011
- Intel Corporation
- Brian S. Doyle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Common plate capacitor array connections, and processes of making same
- Patent number 7,981,756
- Issue date Jul 19, 2011
- Intel Corporation
- Nick Lindert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming abrupt source drain metal gate transistors
- Patent number 7,951,673
- Issue date May 31, 2011
- Intel Corporation
- Nick Lindert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Penetrating implant for forming a semiconductor device
- Patent number 7,943,468
- Issue date May 17, 2011
- Intel Corporation
- Giuseppe Curello
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of patterning a metal on a vertical sidewall of an excavated...
- Patent number 7,927,959
- Issue date Apr 19, 2011
- Intel Corporation
- Steven J. Keating
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bulk non-planar transistor having strained enhanced mobility and me...
- Patent number 7,781,771
- Issue date Aug 24, 2010
- Intel Corporation
- Nick Lindert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming abrupt source drain metal gate transistors
- Patent number 7,704,833
- Issue date Apr 27, 2010
- Intel Corporation
- Nick Lindert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma implantated impurities in junction region recesses
- Patent number 7,671,358
- Issue date Mar 2, 2010
- Intel Corporation
- Nick Lindert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabricating strained channel epitaxial source/drain transistors
- Patent number 7,427,775
- Issue date Sep 23, 2008
- Intel Corporation
- Anand Murthy
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FIN TRIM PLUG STRUCTURES HAVING AN OXIDATION CATALYST LAYER SURROUN...
- Publication number 20230089815
- Publication date Mar 23, 2023
- Intel Corporation
- Leonard GULER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES
- Publication number 20220077302
- Publication date Mar 10, 2022
- Intel Corporation
- Sairam SUBRAMANIAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UNIDIRECTIONAL SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH G...
- Publication number 20220077145
- Publication date Mar 10, 2022
- Intel Corporation
- Walid M. HAFEZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN TRIM PLUG STRUCTURES FOR IMPARTING CHANNEL STRESS
- Publication number 20200220016
- Publication date Jul 9, 2020
- Intel Corporation
- Leonard GULER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COST EFFECTIVE PRECISION RESISTOR USING BLOCKED DEPOP METHOD IN SEL...
- Publication number 20200105746
- Publication date Apr 2, 2020
- Intel Corporation
- Roman OLAC-VAW
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES
- Publication number 20190305112
- Publication date Oct 3, 2019
- Sairam SUBRAMANIAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UNIDIRECTIONAL SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH G...
- Publication number 20190304971
- Publication date Oct 3, 2019
- Intel Corporation
- Walid M. HAFEZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED BUILD-UP OF TOPOGRAPHIC FEATURES
- Publication number 20190096685
- Publication date Mar 28, 2019
- Intel Corporation
- Leonard P. Guler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUE FOR FILLING HIGH ASPECT RATIO, NARROW STRUCTURES WITH MUL...
- Publication number 20170213768
- Publication date Jul 27, 2017
- Intel Corporation
- Joseph M. STEIGERWALD
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF DRAM CAPACITOR AMONG METAL INTERCONNECT
- Publication number 20170148868
- Publication date May 25, 2017
- Intel Corporation
- Nick Lindert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUES FOR IMPROVING GATE CONTROL OVER TRANSISTOR CHANNEL BY IN...
- Publication number 20160240534
- Publication date Aug 18, 2016
- Intel Corporation
- ANAND S. MURTHY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE HAVING A CAPACITOR AND METAL WIRING INTEGRA...
- Publication number 20150255533
- Publication date Sep 10, 2015
- Nick Lindert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RECTANGULAR CAPACITORS FOR DYNAMIC RANDOM ACCESS MEMORY (DRAM) AND...
- Publication number 20140057408
- Publication date Feb 27, 2014
- Nick Lindert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ATOMIC LAYER DEPOSITION (ALD) OF TAALC FOR CAPACITOR INTEGRATION
- Publication number 20140001598
- Publication date Jan 2, 2014
- Nick Lindert
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
FULLY ENCAPSULATED CONDUCTIVE LINES
- Publication number 20130292797
- Publication date Nov 7, 2013
- Nick Lindert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL-INSULATOR-METAL (MIM) CAPACITOR WITH INSULATOR STACK HAVING A...
- Publication number 20130270676
- Publication date Oct 17, 2013
- Nick Lindert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF DRAM CAPACITOR AMONG METAL INTERCONNECT
- Publication number 20130271938
- Publication date Oct 17, 2013
- Intel Corporation
- Nick Lindert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PATTERNING A METAL ON A VERTICAL SIDEWALL OF AN EXCAVATED...
- Publication number 20130234290
- Publication date Sep 12, 2013
- Steven Keating
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PENETRATING IMPLANT FOR FORMING A SEMICONDUCTOR DEVICE
- Publication number 20130224926
- Publication date Aug 29, 2013
- Giuseppe Curello
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
6F2 DRAM Cell
- Publication number 20120326218
- Publication date Dec 27, 2012
- Yih Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE HAVING AN INTEGRATED DOUBLE-WALL CAPACITOR...
- Publication number 20120235274
- Publication date Sep 20, 2012
- Brian S. Doyle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE HAVING A CAPACITOR AND METAL WIRING INTEGRA...
- Publication number 20120223413
- Publication date Sep 6, 2012
- Nick Lindert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RECTANGULAR CAPACITORS FOR DYNAMIC RANDOM ACCESS MEMORY (DRAM) AND...
- Publication number 20120161215
- Publication date Jun 28, 2012
- Nick Lindert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR WITH RECESSED PLATE PORTION FOR DYNAMIC RANDOM ACCESS MEM...
- Publication number 20120161280
- Publication date Jun 28, 2012
- Nick Lindert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RECESSED CHANNEL ARRAY TRANSISTOR (RCAT) IN REPLACEMENT METAL GATE...
- Publication number 20110260244
- Publication date Oct 27, 2011
- Brian S. Doyle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PENETRATING IMPLANT FOR FORMING A SEMICONDUCTOR DEVICE
- Publication number 20110215422
- Publication date Sep 8, 2011
- Giuseppe Curello
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS TO FORM MEMORY DEVICES HAVING A CAPACITOR WITH A RECESSED E...
- Publication number 20110147888
- Publication date Jun 23, 2011
- Joseph M. Steigerwald
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PATTERNING A METAL ON A VERTICAL SIDEWALL OF AN EXCAVATED...
- Publication number 20110134583
- Publication date Jun 9, 2011
- Steve J. Keating
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RECESSED CHANNEL ARRAY TRANSISTOR (RCAT) IN REPLACEMENT METAL GATE...
- Publication number 20100276757
- Publication date Nov 4, 2010
- Brian S. Doyle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Common plate capacitor array connections, and processes of making same
- Publication number 20100155887
- Publication date Jun 24, 2010
- Nick Lindert
- H01 - BASIC ELECTRIC ELEMENTS

Nick Lindert

Person

Patents Grantslast 30 patents

Dual self-aligned gate endcap (SAGE) architectures

Unidirectional self-aligned gate endcap (SAGE) architectures with g...

Cost effective precision resistor using blocked DEPOP method in sel...

Fin trim plug structures having an oxidation catalyst layer surroun...

Unidirectional self-aligned gate endcap (SAGE) architectures with g...

Dual self-aligned gate endcap (SAGE) architectures

Self-aligned build-up of topographic features

Transistor device with gate control layer undercutting the gate die...

Technique for filling high aspect ratio, narrow structures with mul...

Metal-insulator-metal (MIM) capacitor with insulator stack having a...

Semiconductor structure having a capacitor and metal wiring integra...

Formation of DRAM capacitor among metal interconnect

Embedded memory device having MIM capacitor formed in excavated str...

Rectangular capacitors for dynamic random access (DRAM) and dual-pa...

Penetrating implant for forming a semiconductor device

6F2 DRAM cell

Capacitor with recessed plate portion for dynamic random access mem...

Methods to form memory devices having a capacitor with a recessed e...

Embedded memory device having MIM capacitor formed in excavated str...

Penetrating implant for forming a semiconductor device

Metal gate transistors with raised source and drain regions formed...

Recessed channel array transistor (RCAT) in replacement metal gate...

Common plate capacitor array connections, and processes of making same

Forming abrupt source drain metal gate transistors

Penetrating implant for forming a semiconductor device

Method of patterning a metal on a vertical sidewall of an excavated...

Bulk non-planar transistor having strained enhanced mobility and me...

Method of forming abrupt source drain metal gate transistors

Plasma implantated impurities in junction region recesses

Fabricating strained channel epitaxial source/drain transistors

Patents Applicationslast 30 patents

FIN TRIM PLUG STRUCTURES HAVING AN OXIDATION CATALYST LAYER SURROUN...

DUAL SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES

UNIDIRECTIONAL SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH G...

FIN TRIM PLUG STRUCTURES FOR IMPARTING CHANNEL STRESS

COST EFFECTIVE PRECISION RESISTOR USING BLOCKED DEPOP METHOD IN SEL...

DUAL SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES

UNIDIRECTIONAL SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH G...

SELF-ALIGNED BUILD-UP OF TOPOGRAPHIC FEATURES

TECHNIQUE FOR FILLING HIGH ASPECT RATIO, NARROW STRUCTURES WITH MUL...

FORMATION OF DRAM CAPACITOR AMONG METAL INTERCONNECT

TECHNIQUES FOR IMPROVING GATE CONTROL OVER TRANSISTOR CHANNEL BY IN...

SEMICONDUCTOR STRUCTURE HAVING A CAPACITOR AND METAL WIRING INTEGRA...

RECTANGULAR CAPACITORS FOR DYNAMIC RANDOM ACCESS MEMORY (DRAM) AND...

ATOMIC LAYER DEPOSITION (ALD) OF TAALC FOR CAPACITOR INTEGRATION

FULLY ENCAPSULATED CONDUCTIVE LINES

METAL-INSULATOR-METAL (MIM) CAPACITOR WITH INSULATOR STACK HAVING A...

FORMATION OF DRAM CAPACITOR AMONG METAL INTERCONNECT

METHOD OF PATTERNING A METAL ON A VERTICAL SIDEWALL OF AN EXCAVATED...

PENETRATING IMPLANT FOR FORMING A SEMICONDUCTOR DEVICE

6F2 DRAM Cell

SEMICONDUCTOR STRUCTURE HAVING AN INTEGRATED DOUBLE-WALL CAPACITOR...

SEMICONDUCTOR STRUCTURE HAVING A CAPACITOR AND METAL WIRING INTEGRA...

RECTANGULAR CAPACITORS FOR DYNAMIC RANDOM ACCESS MEMORY (DRAM) AND...

CAPACITOR WITH RECESSED PLATE PORTION FOR DYNAMIC RANDOM ACCESS MEM...

RECESSED CHANNEL ARRAY TRANSISTOR (RCAT) IN REPLACEMENT METAL GATE...

PENETRATING IMPLANT FOR FORMING A SEMICONDUCTOR DEVICE

METHODS TO FORM MEMORY DEVICES HAVING A CAPACITOR WITH A RECESSED E...

METHOD OF PATTERNING A METAL ON A VERTICAL SIDEWALL OF AN EXCAVATED...

RECESSED CHANNEL ARRAY TRANSISTOR (RCAT) IN REPLACEMENT METAL GATE...

Common plate capacitor array connections, and processes of making same