Nicolas Loubet

Person

Guilderland, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Strained-channel fin FETs
- Patent number 12,211,936
- Issue date Jan 28, 2025
- STMicroelectronics, Inc.
- Nicolas Loubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to induce strain in finFET channels from an adjacent region
- Patent number 12,191,309
- Issue date Jan 7, 2025
- Bell Semiconductor, LLC
- Pierre Morin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked nanosheet gate-all-around device structures
- Patent number 12,166,042
- Issue date Dec 10, 2024
- International Business Machines Corporation
- Nicolas Loubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backside CMOS trench epi with close N2P space
- Patent number 12,154,945
- Issue date Nov 26, 2024
- International Business Machines Corporation
- Tao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming nanosheet transistor using sacrificial spacer and inner spa...
- Patent number 12,154,971
- Issue date Nov 26, 2024
- Adeia Semiconductor Solutions LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around field effect transistor with bottom dielectric isol...
- Patent number 12,100,746
- Issue date Sep 24, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures with backside gate contacts
- Patent number 12,087,691
- Issue date Sep 10, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual inner spacer epitaxy in monolithic stacked FETs
- Patent number 12,080,709
- Issue date Sep 3, 2024
- International Business Machines Corporation
- Sagarika Mukesh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Liner-free resistance contacts and silicide with silicide stop layer
- Patent number 12,040,373
- Issue date Jul 16, 2024
- International Business Machines Corporation
- Nicolas Loubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of nanosheet transistor channels using epitaxial growth
- Patent number 11,984,493
- Issue date May 14, 2024
- International Business Machines Corporation
- Nicolas Loubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to induce strain in FINFET channels from an adjacent region
- Patent number 11,948,943
- Issue date Apr 2, 2024
- Bell Semiconductor, LLC
- Pierre Morin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High aspect ratio shared contacts
- Patent number 11,935,929
- Issue date Mar 19, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Co-integrated logic, electrostatic discharge, and well contact devi...
- Patent number 11,894,361
- Issue date Feb 6, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around monolithic stacked field effect transistors having...
- Patent number 11,894,436
- Issue date Feb 6, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional field effect device
- Patent number 11,817,502
- Issue date Nov 14, 2023
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming nanosheet transistor using sacrificial spacer and inner spa...
- Patent number 11,682,715
- Issue date Jun 20, 2023
- TESSERA LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to co-integrate SiGe and Si channels for finFET devices
- Patent number 11,670,554
- Issue date Jun 6, 2023
- Bell Semiconductor, LLC
- Nicolas Loubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-fin FINFET device including epitaxial growth barrier on outsi...
- Patent number 11,610,886
- Issue date Mar 21, 2023
- Bell Semiconductor, LLC
- Qing Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Steep-switch field effect transistor with integrated bi-stable resi...
- Patent number 11,605,672
- Issue date Mar 14, 2023
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to induce strain in finFET channels from an adjacent region
- Patent number 11,587,928
- Issue date Feb 21, 2023
- Bell Semiconductor, LLC
- Pierre Morin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Creation of stress in the channel of a nanosheet transistor
- Patent number 11,575,003
- Issue date Feb 7, 2023
- International Business Machines Corporation
- Nicolas Loubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming gate last vertical FET with self-aligned spacers and junctions
- Patent number 11,575,024
- Issue date Feb 7, 2023
- International Business Machines Corporation
- Nicolas Loubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to induce strain in 3-D microfabricated structures
- Patent number 11,569,384
- Issue date Jan 31, 2023
- STMicroelectronics, Inc.
- Nicolas Loubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor divice having a carbon containing insulation layer fo...
- Patent number 11,515,392
- Issue date Nov 29, 2022
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Shay Reboh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device including at least one nano-object
- Patent number 11,450,755
- Issue date Sep 20, 2022
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Shay Reboh
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Forming shallow trench isolation regions for nanosheet field-effect...
- Patent number 11,322,408
- Issue date May 3, 2022
- International Business Machines Corporation
- Nicolas Loubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with fin and related methods
- Patent number 11,302,812
- Issue date Apr 12, 2022
- STMicroelectronics, Inc.
- Pierre Morin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Co-integration of tensile silicon and compressive silicon germanium
- Patent number 11,264,286
- Issue date Mar 1, 2022
- STMicroelectronics, Inc.
- Nicolas Loubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional field effect device
- Patent number 11,222,981
- Issue date Jan 11, 2022
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional field effect device
- Patent number 11,183,593
- Issue date Nov 23, 2021
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HYBRID ORIENTATION CHANNELS AND MIXED ORIENTATION BOTTOM EPITAXY
- Publication number 20240395816
- Publication date Nov 28, 2024
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MIDDLE OF LINE CONTACT FOR ADVANCED NODES
- Publication number 20240321982
- Publication date Sep 26, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT CUT AND WRAP AROUND CONTACT
- Publication number 20240321645
- Publication date Sep 26, 2024
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED SUBSTRATE ISOLATION (SASI) OF GATE-ALL-AROUND NANOSHEE...
- Publication number 20240290860
- Publication date Aug 29, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR GATE STACK FORMATION
- Publication number 20240234516
- Publication date Jul 11, 2024
- International Business Machines Corporation
- HUIMEI ZHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACK SIDE CONTACTS FOR SEMICONDUCTOR DEVICES
- Publication number 20240222229
- Publication date Jul 4, 2024
- International Business Machines Corporation
- Tao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF NON-SELF-ALIGNED BACKSIDE CONTACT
- Publication number 20240213338
- Publication date Jun 27, 2024
- International Business Machines Corporation
- Tao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH DIELECTRIC STACK ISOLATING BACKSIDE POWER RAIL
- Publication number 20240204005
- Publication date Jun 20, 2024
- International Business Machines Corporation
- Tao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO INDUCE STRAIN IN FINFET CHANNELS FROM AN ADJACENT REGION
- Publication number 20240203995
- Publication date Jun 20, 2024
- Bell Semiconductor, LLC
- Pierre MORIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE DIRECT CONTACT FORMATION
- Publication number 20240194528
- Publication date Jun 13, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED TRANSISTORS HAVING BOTTOM CONTACT WITH LARGER SILICIDE
- Publication number 20240186325
- Publication date Jun 6, 2024
- International Business Machines Corporation
- Koichi Motoyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND TRANSISTORS WITH DUAL PFET AND NFET CHANNELS
- Publication number 20240128346
- Publication date Apr 18, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING NANOSHEET TRANSISTOR USING SACRIFICIAL SPACER AND INNER SPA...
- Publication number 20240120408
- Publication date Apr 11, 2024
- TESSERA LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-Aligned Wafer Backside Gate Signal with Airgap
- Publication number 20240113023
- Publication date Apr 4, 2024
- International Business Machines Corporation
- Tao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE CMOS TRENCH EPI WITH CLOSE N2P SPACE
- Publication number 20240096940
- Publication date Mar 21, 2024
- International Business Machines Corporation
- Tao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITE NANOSHEET TUNNEL TRANSISTORS
- Publication number 20240096947
- Publication date Mar 21, 2024
- International Business Machines Corporation
- Kirsten Emilie Moselund
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET STACKS WITH DIELECTRIC ISOLATION LAYERS
- Publication number 20240096952
- Publication date Mar 21, 2024
- International Business Machines Corporation
- Juntao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE POWER ELEMENT CONNECTION TO SOURCE/DRAIN REGION
- Publication number 20240079327
- Publication date Mar 7, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SRAM WITH STAGGERED STACKED FET
- Publication number 20240074135
- Publication date Feb 29, 2024
- International Business Machines Corporation
- Nicolas Jean Loubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED LONG CHANNEL TRANSISTOR
- Publication number 20240063189
- Publication date Feb 22, 2024
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CO-INTEGRATION OF GATE-ALL-AROUND NANOSHEET LOGIC DEVICE AND PRECIS...
- Publication number 20240006467
- Publication date Jan 4, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND TRANSISTORS WITH HYBRID ORIENTATION
- Publication number 20230411531
- Publication date Dec 21, 2023
- International Business Machines Corporation
- Nicolas Jean Loubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND DEVICES HAVING DIFFERENT SPACER THICKNESSES
- Publication number 20230411392
- Publication date Dec 21, 2023
- International Business Machines Corporation
- HUIMEI ZHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED BACKSIDE CONTACT WITH INCREASED CONTACT AREA
- Publication number 20230411289
- Publication date Dec 21, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED BACKSIDE CONTACT WITH INCREASED CONTACT AREA
- Publication number 20230411466
- Publication date Dec 21, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STEPPED SOURCE DRAIN CONTACT FOR GATE-ALL-AROUND TRANSISTOR
- Publication number 20230411477
- Publication date Dec 21, 2023
- International Business Machines Corporation
- Su Chen Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED DIELECTRIC ISOLATION STRUCTURE FOR NANOSHEET
- Publication number 20230369394
- Publication date Nov 16, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO INDUCE STRAIN IN 3-D MICROFABRICATED STRUCTURES
- Publication number 20230352586
- Publication date Nov 2, 2023
- STMicroelectronics, Inc.
- Nicolas LOUBET
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FETS INCLUDING DEVICES WITH THICK GATE OXIDE
- Publication number 20230307452
- Publication date Sep 28, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL INNER SPACER EPITAXY IN MONOLITHIC STACKED FETS
- Publication number 20230299080
- Publication date Sep 21, 2023
- International Business Machines Corporation
- Sagarika Mukesh
- H01 - BASIC ELECTRIC ELEMENTS

Nicolas Loubet

Person

Patents Grantslast 30 patents

Strained-channel fin FETs

Method to induce strain in finFET channels from an adjacent region

Stacked nanosheet gate-all-around device structures

Backside CMOS trench epi with close N2P space

Forming nanosheet transistor using sacrificial spacer and inner spa...

Gate-all-around field effect transistor with bottom dielectric isol...

Semiconductor structures with backside gate contacts

Dual inner spacer epitaxy in monolithic stacked FETs

Liner-free resistance contacts and silicide with silicide stop layer

Formation of nanosheet transistor channels using epitaxial growth

Method to induce strain in FINFET channels from an adjacent region

High aspect ratio shared contacts

Co-integrated logic, electrostatic discharge, and well contact devi...

Gate-all-around monolithic stacked field effect transistors having...

Three-dimensional field effect device

Forming nanosheet transistor using sacrificial spacer and inner spa...

Method to co-integrate SiGe and Si channels for finFET devices

Multi-fin FINFET device including epitaxial growth barrier on outsi...

Steep-switch field effect transistor with integrated bi-stable resi...

Method to induce strain in finFET channels from an adjacent region

Creation of stress in the channel of a nanosheet transistor

Forming gate last vertical FET with self-aligned spacers and junctions

Method to induce strain in 3-D microfabricated structures

Semiconductor divice having a carbon containing insulation layer fo...

Electronic device including at least one nano-object

Forming shallow trench isolation regions for nanosheet field-effect...

Semiconductor device with fin and related methods

Co-integration of tensile silicon and compressive silicon germanium

Three-dimensional field effect device

Three-dimensional field effect device

Patents Applicationslast 30 patents

HYBRID ORIENTATION CHANNELS AND MIXED ORIENTATION BOTTOM EPITAXY

MIDDLE OF LINE CONTACT FOR ADVANCED NODES

CONTACT CUT AND WRAP AROUND CONTACT

SELF-ALIGNED SUBSTRATE ISOLATION (SASI) OF GATE-ALL-AROUND NANOSHEE...

TRANSISTOR GATE STACK FORMATION

BACK SIDE CONTACTS FOR SEMICONDUCTOR DEVICES

FORMATION OF NON-SELF-ALIGNED BACKSIDE CONTACT

TRANSISTORS WITH DIELECTRIC STACK ISOLATING BACKSIDE POWER RAIL

METHOD TO INDUCE STRAIN IN FINFET CHANNELS FROM AN ADJACENT REGION

BACKSIDE DIRECT CONTACT FORMATION

STACKED TRANSISTORS HAVING BOTTOM CONTACT WITH LARGER SILICIDE

GATE-ALL-AROUND TRANSISTORS WITH DUAL PFET AND NFET CHANNELS

FORMING NANOSHEET TRANSISTOR USING SACRIFICIAL SPACER AND INNER SPA...

Self-Aligned Wafer Backside Gate Signal with Airgap

BACKSIDE CMOS TRENCH EPI WITH CLOSE N2P SPACE

COMPOSITE NANOSHEET TUNNEL TRANSISTORS

NANOSHEET STACKS WITH DIELECTRIC ISOLATION LAYERS

BACKSIDE POWER ELEMENT CONNECTION TO SOURCE/DRAIN REGION

SRAM WITH STAGGERED STACKED FET

STACKED LONG CHANNEL TRANSISTOR

CO-INTEGRATION OF GATE-ALL-AROUND NANOSHEET LOGIC DEVICE AND PRECIS...

GATE-ALL-AROUND TRANSISTORS WITH HYBRID ORIENTATION

GATE-ALL-AROUND DEVICES HAVING DIFFERENT SPACER THICKNESSES

SELF-ALIGNED BACKSIDE CONTACT WITH INCREASED CONTACT AREA

SELF-ALIGNED BACKSIDE CONTACT WITH INCREASED CONTACT AREA

STEPPED SOURCE DRAIN CONTACT FOR GATE-ALL-AROUND TRANSISTOR

SELF-ALIGNED DIELECTRIC ISOLATION STRUCTURE FOR NANOSHEET

METHOD TO INDUCE STRAIN IN 3-D MICROFABRICATED STRUCTURES

STACKED FETS INCLUDING DEVICES WITH THICK GATE OXIDE

DUAL INNER SPACER EPITAXY IN MONOLITHIC STACKED FETS