Nicolas Loubet

Person

Guilderland, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Gate-cut and separation techniques for enabling independent gate co...
- Patent number 12,336,294
- Issue date Jun 17, 2025
- International Business Machines Corporation
- Ruilong Xie
Information Patent Grant
Gate-all-around nanosheet field effect transistor integrated with f...
- Patent number 12,317,555
- Issue date May 27, 2025
- International Business Machines Corporation
- Julien Frougier
Information Patent Grant
Dielectric reflow for boundary control
- Patent number 12,310,100
- Issue date May 20, 2025
- International Business Machines Corporation
- Jing Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-fin FINFET device including epitaxial growth barrier on outsi...
- Patent number 12,278,234
- Issue date Apr 15, 2025
- Bell Semiconductor, LLC
- Qing Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source or drain template for reducing strain loss in spaced-apart n...
- Patent number 12,268,020
- Issue date Apr 1, 2025
- International Business Machines Corporation
- Shogo Mochizuki
Information Patent Grant
Semiconductor device with strained channel
- Patent number 12,261,173
- Issue date Mar 25, 2025
- International Business Machines Corporation
- Shogo Mochizuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional field effect device
- Patent number 12,237,325
- Issue date Feb 25, 2025
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained-channel fin FETs
- Patent number 12,211,936
- Issue date Jan 28, 2025
- STMicroelectronics, Inc.
- Nicolas Loubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to induce strain in finFET channels from an adjacent region
- Patent number 12,191,309
- Issue date Jan 7, 2025
- Bell Semiconductor, LLC
- Pierre Morin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked nanosheet gate-all-around device structures
- Patent number 12,166,042
- Issue date Dec 10, 2024
- International Business Machines Corporation
- Nicolas Loubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backside CMOS trench epi with close N2P space
- Patent number 12,154,945
- Issue date Nov 26, 2024
- International Business Machines Corporation
- Tao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming nanosheet transistor using sacrificial spacer and inner spa...
- Patent number 12,154,971
- Issue date Nov 26, 2024
- Adeia Semiconductor Solutions LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around field effect transistor with bottom dielectric isol...
- Patent number 12,100,746
- Issue date Sep 24, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures with backside gate contacts
- Patent number 12,087,691
- Issue date Sep 10, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual inner spacer epitaxy in monolithic stacked FETs
- Patent number 12,080,709
- Issue date Sep 3, 2024
- International Business Machines Corporation
- Sagarika Mukesh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Liner-free resistance contacts and silicide with silicide stop layer
- Patent number 12,040,373
- Issue date Jul 16, 2024
- International Business Machines Corporation
- Nicolas Loubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of nanosheet transistor channels using epitaxial growth
- Patent number 11,984,493
- Issue date May 14, 2024
- International Business Machines Corporation
- Nicolas Loubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to induce strain in FINFET channels from an adjacent region
- Patent number 11,948,943
- Issue date Apr 2, 2024
- Bell Semiconductor, LLC
- Pierre Morin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High aspect ratio shared contacts
- Patent number 11,935,929
- Issue date Mar 19, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Co-integrated logic, electrostatic discharge, and well contact devi...
- Patent number 11,894,361
- Issue date Feb 6, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around monolithic stacked field effect transistors having...
- Patent number 11,894,436
- Issue date Feb 6, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional field effect device
- Patent number 11,817,502
- Issue date Nov 14, 2023
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming nanosheet transistor using sacrificial spacer and inner spa...
- Patent number 11,682,715
- Issue date Jun 20, 2023
- TESSERA LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to co-integrate SiGe and Si channels for finFET devices
- Patent number 11,670,554
- Issue date Jun 6, 2023
- Bell Semiconductor, LLC
- Nicolas Loubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-fin FINFET device including epitaxial growth barrier on outsi...
- Patent number 11,610,886
- Issue date Mar 21, 2023
- Bell Semiconductor, LLC
- Qing Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Steep-switch field effect transistor with integrated bi-stable resi...
- Patent number 11,605,672
- Issue date Mar 14, 2023
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to induce strain in finFET channels from an adjacent region
- Patent number 11,587,928
- Issue date Feb 21, 2023
- Bell Semiconductor, LLC
- Pierre Morin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Creation of stress in the channel of a nanosheet transistor
- Patent number 11,575,003
- Issue date Feb 7, 2023
- International Business Machines Corporation
- Nicolas Loubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming gate last vertical FET with self-aligned spacers and junctions
- Patent number 11,575,024
- Issue date Feb 7, 2023
- International Business Machines Corporation
- Nicolas Loubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to induce strain in 3-D microfabricated structures
- Patent number 11,569,384
- Issue date Jan 31, 2023
- STMicroelectronics, Inc.
- Nicolas Loubet
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ASYMMETRIC SOURCE/DRAIN SPACER WITH SHIFTED VBPR AND BSPDN
- Publication number 20250218946
- Publication date Jul 3, 2025
- International Business Machines Corporation
- GIDEON OYIBO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER RAIL LEAD FOR SEMICONDUCTOR STRUCTURES
- Publication number 20250218944
- Publication date Jul 3, 2025
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL GATE CUT WITH BACKSIDE POWER DELIVERY
- Publication number 20250210520
- Publication date Jun 26, 2025
- International Business Machines Corporation
- Lijuan Zou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOWER GATE CAP FOR BACKSIDE CONTACT INSULATION
- Publication number 20250203988
- Publication date Jun 19, 2025
- International Business Machines Corporation
- Lijuan Zou
Information Patent Application
INNER SPACER AND SOURCE DRAIN EPI
- Publication number 20250203991
- Publication date Jun 19, 2025
- International Business Machines Corporation
- Tao Li
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH CONTACTS HAVING SIDEWALL SPACERS
- Publication number 20250203989
- Publication date Jun 19, 2025
- International Business Machines Corporation
- Sagarika Mukesh
Information Patent Application
WRAP AROUND CONTACT WITH IMPROVED METAL THICKNESS
- Publication number 20250203945
- Publication date Jun 19, 2025
- International Business Machines Corporation
- Shravana Kumar Katakam
Information Patent Application
ENLARGED PLACEHOLDER AND BACKSIDE CONTACT
- Publication number 20250201711
- Publication date Jun 19, 2025
- International Business Machines Corporation
- Lijuan Zou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOCAL BACKSIDE CONTACT ISOLATION FOR MERGED BACKSIDE CONTACT PATTER...
- Publication number 20250194152
- Publication date Jun 12, 2025
- International Business Machines Corporation
- GIDEON OYIBO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FRONTSIDE ILD OPTIMIZATION FOR BACKSIDE POWER DISTRIBUTION NETWORK
- Publication number 20250194183
- Publication date Jun 12, 2025
- International Business Machines Corporation
- Haojun Zhang
Information Patent Application
LOWERING GATE ASPECT RATIO ON STI REGION
- Publication number 20250191966
- Publication date Jun 12, 2025
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENLARGED BACKSIDE CONTACT THROUGH STI LINER RECESS
- Publication number 20250185299
- Publication date Jun 5, 2025
- International Business Machines Corporation
- Lijuan Zou
Information Patent Application
CONNECTING FRONTSIDE CONTACT WITH BACKSIDE CONTACT OF A SOURCE/DRAIN
- Publication number 20250185315
- Publication date Jun 5, 2025
- International Business Machines Corporation
- Andrew M. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIPLE THRESHOLD STACKED FIELD EFFECT TRANSISTORS
- Publication number 20250185307
- Publication date Jun 5, 2025
- International Business Machines Corporation
- Ruilong Xie
Information Patent Application
SELF-ALIGNED BACKSIDE GATE CUT DIELECTRIC WITH AIR GAP
- Publication number 20250185356
- Publication date Jun 5, 2025
- International Business Machines Corporation
- Tsung-Sheng Kang
Information Patent Application
BACKSIDE DIELECTRIC LINERS
- Publication number 20250176214
- Publication date May 29, 2025
- International Business Machines Corporation
- Tsung-Sheng Kang
Information Patent Application
BACKSIDE CONTACT CAP AND SPACER FOR BACKSIDE SIGNAL CONTACT ISOLATION
- Publication number 20250169168
- Publication date May 22, 2025
- International Business Machines Corporation
- Tsung-Sheng Kang
Information Patent Application
BACKSIDE PLACEHOLDERS AND SELF ALIGNED BACKSIDE CONTACTS
- Publication number 20250167076
- Publication date May 22, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES WITH INTEGRATED ELECTROSTATIC DISCHARGE CL...
- Publication number 20250151400
- Publication date May 8, 2025
- International Business Machines Corporation
- Lijuan Zou
Information Patent Application
FORMING NANOSHEET TRANSISTOR USING SACRIFICIAL SPACER AND INNER SPA...
- Publication number 20250142921
- Publication date May 1, 2025
- Adeia Semiconductor Solutions LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED-CHANNEL FIN FETS
- Publication number 20250126850
- Publication date Apr 17, 2025
- STMicroelectronics, Inc.
- Nicolas LOUBET
Information Patent Application
ELECTRONIC FUSE VIA AND LOGIC DEVICE CO-INTEGRATION WITH BACKSIDE P...
- Publication number 20250118660
- Publication date Apr 10, 2025
- International Business Machines Corporation
- Manasa Medikonda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FETS CONTAINING DIFFERENT SHAPED INNER SPACERS
- Publication number 20250107218
- Publication date Mar 27, 2025
- International Business Machines Corporation
- Tsung-Sheng Kang
Information Patent Application
SPACER MODIFICATION FOR SELECTIVE AIRGAP SPACER FORMATION
- Publication number 20250107219
- Publication date Mar 27, 2025
- International Business Machines Corporation
- Juntao Li
Information Patent Application
DIELECTRIC AND TWO-DIMENSIONAL SEMICONDUCTOR MATERIAL NANOSHEET DEV...
- Publication number 20250098240
- Publication date Mar 20, 2025
- International Business Machines Corporation
- Huimei Zhou
Information Patent Application
CMOS INTEGRATION FOR DOPED PLACEHOLDER AS DIRECT BACKSIDE CONTACT
- Publication number 20250098268
- Publication date Mar 20, 2025
- International Business Machines Corporation
- Tsung-Sheng Kang
Information Patent Application
SEMICONDUCTOR DEVICE WITH GATE CONTACT OVER AN ACTIVE REGION
- Publication number 20250098215
- Publication date Mar 20, 2025
- International Business Machines Corporation
- Tao Li
Information Patent Application
WRAP AROUND BACKSIDE CONTACT FOR S/D WITH BACKSIDE TRENCH EPI AND B...
- Publication number 20250081541
- Publication date Mar 6, 2025
- International Business Machines Corporation
- Tsung-Sheng Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPACE CONFINED EPI FOR STACKED FET
- Publication number 20250081550
- Publication date Mar 6, 2025
- International Business Machines Corporation
- Tsung-Sheng Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET HEIGHT CONTROL WITH DENSE OXIDE SHALLOW TRENCH ISOLATION
- Publication number 20250006788
- Publication date Jan 2, 2025
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS

Nicolas Loubet

Person

Patents Grantslast 30 patents

Gate-cut and separation techniques for enabling independent gate co...

Gate-all-around nanosheet field effect transistor integrated with f...

Dielectric reflow for boundary control

Multi-fin FINFET device including epitaxial growth barrier on outsi...

Source or drain template for reducing strain loss in spaced-apart n...

Semiconductor device with strained channel

Three-dimensional field effect device

Strained-channel fin FETs

Method to induce strain in finFET channels from an adjacent region

Stacked nanosheet gate-all-around device structures

Backside CMOS trench epi with close N2P space

Forming nanosheet transistor using sacrificial spacer and inner spa...

Gate-all-around field effect transistor with bottom dielectric isol...

Semiconductor structures with backside gate contacts

Dual inner spacer epitaxy in monolithic stacked FETs

Liner-free resistance contacts and silicide with silicide stop layer

Formation of nanosheet transistor channels using epitaxial growth

Method to induce strain in FINFET channels from an adjacent region

High aspect ratio shared contacts

Co-integrated logic, electrostatic discharge, and well contact devi...

Gate-all-around monolithic stacked field effect transistors having...

Three-dimensional field effect device

Forming nanosheet transistor using sacrificial spacer and inner spa...

Method to co-integrate SiGe and Si channels for finFET devices

Multi-fin FINFET device including epitaxial growth barrier on outsi...

Steep-switch field effect transistor with integrated bi-stable resi...

Method to induce strain in finFET channels from an adjacent region

Creation of stress in the channel of a nanosheet transistor

Forming gate last vertical FET with self-aligned spacers and junctions

Method to induce strain in 3-D microfabricated structures

Patents Applicationslast 30 patents

ASYMMETRIC SOURCE/DRAIN SPACER WITH SHIFTED VBPR AND BSPDN

POWER RAIL LEAD FOR SEMICONDUCTOR STRUCTURES

DUAL GATE CUT WITH BACKSIDE POWER DELIVERY

LOWER GATE CAP FOR BACKSIDE CONTACT INSULATION

INNER SPACER AND SOURCE DRAIN EPI

SEMICONDUCTOR STRUCTURE WITH CONTACTS HAVING SIDEWALL SPACERS

WRAP AROUND CONTACT WITH IMPROVED METAL THICKNESS

ENLARGED PLACEHOLDER AND BACKSIDE CONTACT

LOCAL BACKSIDE CONTACT ISOLATION FOR MERGED BACKSIDE CONTACT PATTER...

FRONTSIDE ILD OPTIMIZATION FOR BACKSIDE POWER DISTRIBUTION NETWORK

LOWERING GATE ASPECT RATIO ON STI REGION

ENLARGED BACKSIDE CONTACT THROUGH STI LINER RECESS

CONNECTING FRONTSIDE CONTACT WITH BACKSIDE CONTACT OF A SOURCE/DRAIN

MULTIPLE THRESHOLD STACKED FIELD EFFECT TRANSISTORS

SELF-ALIGNED BACKSIDE GATE CUT DIELECTRIC WITH AIR GAP

BACKSIDE DIELECTRIC LINERS

BACKSIDE CONTACT CAP AND SPACER FOR BACKSIDE SIGNAL CONTACT ISOLATION

BACKSIDE PLACEHOLDERS AND SELF ALIGNED BACKSIDE CONTACTS

SEMICONDUCTOR STRUCTURES WITH INTEGRATED ELECTROSTATIC DISCHARGE CL...

FORMING NANOSHEET TRANSISTOR USING SACRIFICIAL SPACER AND INNER SPA...

STRAINED-CHANNEL FIN FETS

ELECTRONIC FUSE VIA AND LOGIC DEVICE CO-INTEGRATION WITH BACKSIDE P...

STACKED FETS CONTAINING DIFFERENT SHAPED INNER SPACERS

SPACER MODIFICATION FOR SELECTIVE AIRGAP SPACER FORMATION

DIELECTRIC AND TWO-DIMENSIONAL SEMICONDUCTOR MATERIAL NANOSHEET DEV...

CMOS INTEGRATION FOR DOPED PLACEHOLDER AS DIRECT BACKSIDE CONTACT

SEMICONDUCTOR DEVICE WITH GATE CONTACT OVER AN ACTIVE REGION

WRAP AROUND BACKSIDE CONTACT FOR S/D WITH BACKSIDE TRENCH EPI AND B...

SPACE CONFINED EPI FOR STACKED FET

NANOSHEET HEIGHT CONTROL WITH DENSE OXIDE SHALLOW TRENCH ISOLATION