Niraj Ranjan

Person

El Segundo, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Trench field electrode termination structure for transistor devices
- Patent number 11,217,690
- Issue date Jan 4, 2022
- Infineon Technologies Austria AG
- Ashita Mirchandani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky integrated high voltage terminations and related HVIC appl...
- Patent number 10,879,230
- Issue date Dec 29, 2020
- Infineon Technologies Americas Corp.
- Donald He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench FET with ruggedness enhancement regions
- Patent number 9,991,377
- Issue date Jun 5, 2018
- Infineon Technologies Americas Corp.
- Ashita Mirchandani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT having deep gate trench
- Patent number 9,859,407
- Issue date Jan 2, 2018
- Infineon Technologies Americas Corp.
- Yi Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with contiguous gate trenches and offset...
- Patent number 9,818,743
- Issue date Nov 14, 2017
- Infineon Technologies Americas Corp.
- Kapil Kelkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a shallow and narrow trench FET and related...
- Patent number 9,653,597
- Issue date May 16, 2017
- Infineon Technologies Americas Corp.
- Timothy D. Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical FET having reduced on-resistance
- Patent number 9,590,096
- Issue date Mar 7, 2017
- Infineon Technologies Americas Corp.
- Harsh Naik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT with buried emitter electrode
- Patent number 9,496,378
- Issue date Nov 15, 2016
- Infineon Technologies Americas Corp.
- Yi Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep gate trench IGBT
- Patent number 9,299,819
- Issue date Mar 29, 2016
- Infineon Technologies Americas Corp.
- Yi Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Level shifter utilizing a capacitive isolation barrier
- Patent number 9,257,983
- Issue date Feb 9, 2016
- Infineon Technologies Americas Corp.
- Min Fang
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
IGBT with buried emitter electrode
- Patent number 9,245,985
- Issue date Jan 26, 2016
- Infineon Technologies Americas Corp.
- Yi Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Level shifter having feedback signal from high voltage circuit
- Patent number 8,988,128
- Issue date Mar 24, 2015
- International Rectifier Corporation
- Min Fang
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Level shifter utilizing bidirectional signaling through a capacitiv...
- Patent number 8,878,591
- Issue date Nov 4, 2014
- International Rectifier Corporation
- Min Fang
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Buck converter power package
- Patent number 8,860,194
- Issue date Oct 14, 2014
- International Rectifier Corporation
- Ling Ma
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Passivation structure with voltage equalizing loops
- Patent number 8,076,672
- Issue date Dec 13, 2011
- International Rectifier Corporation
- Niraj Ranjan
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Passivation structure with voltage equalizing loops
- Patent number 7,183,626
- Issue date Feb 27, 2007
- International Rectifier Corporation
- Niraj Ranjan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated series schottky and FET to allow negative drain voltage
- Patent number 6,707,101
- Issue date Mar 16, 2004
- International Rectifier Corporation
- Niraj Ranjan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated series schottky and FET to allow negative drain voltage
- Patent number 6,529,034
- Issue date Mar 4, 2003
- International Rectifier Corporation
- Niraj Ranjan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for manufacturing radhard power integrated circuit
- Patent number 6,380,004
- Issue date Apr 30, 2002
- International Rectifier Corp.
- Milton John Boden
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Graded concentration epitaxial substrate for semiconductor device h...
- Patent number 5,861,657
- Issue date Jan 19, 1999
- International Rectifier Corporation
- Niraj Ranjan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage power integrated circuit with level shift operation an...
- Patent number 5,801,418
- Issue date Sep 1, 1998
- International Rectifier Corporation
- Niraj Ranjan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS gated semiconductor device with source metal covering the activ...
- Patent number 5,801,431
- Issue date Sep 1, 1998
- International Rectifier Corporation
- Niraj Ranjan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT with integrated control
- Patent number 5,798,538
- Issue date Aug 25, 1998
- International Rectifier Corporation
- Bruno C. Nadd
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polysilicon field ring structure for power IC
- Patent number 5,686,754
- Issue date Nov 11, 1997
- International Rectifier Corporation
- Chongwook Chris Choi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FIELD ELECTRODE TERMINATION STRUCTURE FOR TRENCH-BASED TRANSISTOR D...
- Publication number 20220109068
- Publication date Apr 7, 2022
- Ashita Mirchandani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench Field Electrode Termination Structure for Transistor Devices
- Publication number 20210083096
- Publication date Mar 18, 2021
- Ashita Mirchandani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Schottky Integrated High Voltage Terminations and Related HVIC Appl...
- Publication number 20170365595
- Publication date Dec 21, 2017
- Infineon Technologies Americas Corp.
- Donald He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Single-Chip High Speed and High Voltage Level Shifter
- Publication number 20170279449
- Publication date Sep 28, 2017
- Infineon Technologies Americas Corp.
- Min Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Fabricating a Shallow and Narrow Trench FET
- Publication number 20170213909
- Publication date Jul 27, 2017
- Infineon Technologies Americas Corp.
- Timothy D. Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT Having Deep Gate Trench
- Publication number 20160204238
- Publication date Jul 14, 2016
- Infineon Technologies Americas Corp.
- Yi Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical FET Having Reduced On-Resistance
- Publication number 20160172484
- Publication date Jun 16, 2016
- Infineon Technologies Americas Corp.
- Harsh Naik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power FET Having Reduced Gate Resistance
- Publication number 20160172295
- Publication date Jun 16, 2016
- Infineon Technologies Americas Corp.
- Alex Lollio
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT with Buried Emitter Electrode
- Publication number 20160155832
- Publication date Jun 2, 2016
- Infineon Technologies Americas Corp.
- Yi Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Level Shifter Utilizing a Capacitive Isolation Barrier
- Publication number 20150054564
- Publication date Feb 26, 2015
- International Rectifier Corporation
- Min Fang
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Power Semiconductor Device with Contiguous Gate Trenches and Offset...
- Publication number 20140374825
- Publication date Dec 25, 2014
- Kapil Kelkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Buck Converter Power Package
- Publication number 20140118032
- Publication date May 1, 2014
- INTERNATIONAL RECTIFIER CORPORATION
- Ling Ma
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
Level Shifter Utilizing Bidirectional Signaling Through a Capacitiv...
- Publication number 20140028369
- Publication date Jan 30, 2014
- International Rectifier Corporation
- Min Fang
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Level Shifter Having Feedback Signal From High Voltage Circuit
- Publication number 20140028371
- Publication date Jan 30, 2014
- Min Fang
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Trench FET with Ruggedness Enhancement Regions
- Publication number 20130264636
- Publication date Oct 10, 2013
- INTERNATIONAL RECTIFIER CORPORATION
- Ashita Mirchandani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT with Buried Emitter Electrode
- Publication number 20130256744
- Publication date Oct 3, 2013
- INTERNATIONAL RECTIFIER CORPORATION
- Yi Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Deep Gate Trench IGBT
- Publication number 20130256745
- Publication date Oct 3, 2013
- International Rectifier Corporation
- Yi Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating a shallow and narrow trench FETand related s...
- Publication number 20110284950
- Publication date Nov 24, 2011
- INTERNATIONAL RECTIFIER CORPORATION
- Timothy D. Henson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Passivation structure with voltage equalizing loops
- Publication number 20070120224
- Publication date May 31, 2007
- International Rectifier Corporation
- Niraj Ranjan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Passivation structure with voltage equalizing loops
- Publication number 20060102984
- Publication date May 18, 2006
- International Rectifier Corporation
- Niraj Ranjan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated series schottky and FET to allow negative drain voltage
- Publication number 20030102886
- Publication date Jun 5, 2003
- International Rectifier Corporation
- Niraj Ranjan
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Radhard power integrated circuit
- Publication number 20010034094
- Publication date Oct 25, 2001
- International Rectifier Corporation
- Milton John Boden
- H01 - BASIC ELECTRIC ELEMENTS

Niraj Ranjan

Person

Patents Grantslast 30 patents

Trench field electrode termination structure for transistor devices

Schottky integrated high voltage terminations and related HVIC appl...

Trench FET with ruggedness enhancement regions

IGBT having deep gate trench

Power semiconductor device with contiguous gate trenches and offset...

Method for fabricating a shallow and narrow trench FET and related...

Vertical FET having reduced on-resistance

IGBT with buried emitter electrode

Deep gate trench IGBT

Level shifter utilizing a capacitive isolation barrier

IGBT with buried emitter electrode

Level shifter having feedback signal from high voltage circuit

Level shifter utilizing bidirectional signaling through a capacitiv...

Buck converter power package

Passivation structure with voltage equalizing loops

Passivation structure with voltage equalizing loops

Integrated series schottky and FET to allow negative drain voltage

Integrated series schottky and FET to allow negative drain voltage

Process for manufacturing radhard power integrated circuit

Graded concentration epitaxial substrate for semiconductor device h...

High voltage power integrated circuit with level shift operation an...

MOS gated semiconductor device with source metal covering the activ...

IGBT with integrated control

Polysilicon field ring structure for power IC

Patents Applicationslast 30 patents

FIELD ELECTRODE TERMINATION STRUCTURE FOR TRENCH-BASED TRANSISTOR D...

Trench Field Electrode Termination Structure for Transistor Devices

Schottky Integrated High Voltage Terminations and Related HVIC Appl...

Single-Chip High Speed and High Voltage Level Shifter

Method for Fabricating a Shallow and Narrow Trench FET

IGBT Having Deep Gate Trench

Vertical FET Having Reduced On-Resistance

Power FET Having Reduced Gate Resistance

IGBT with Buried Emitter Electrode

Level Shifter Utilizing a Capacitive Isolation Barrier

Power Semiconductor Device with Contiguous Gate Trenches and Offset...

Buck Converter Power Package

Level Shifter Utilizing Bidirectional Signaling Through a Capacitiv...

Level Shifter Having Feedback Signal From High Voltage Circuit

Trench FET with Ruggedness Enhancement Regions

IGBT with Buried Emitter Electrode

Deep Gate Trench IGBT

Method for fabricating a shallow and narrow trench FETand related s...

Passivation structure with voltage equalizing loops

Passivation structure with voltage equalizing loops

Integrated series schottky and FET to allow negative drain voltage

Radhard power integrated circuit