Nirmal Ramaswamy

Person

Boise, ID, US

People

Patents Grantslast 30 patents

Information Patent Grant
Memory cells having electrically conductive nanodots and apparatus...
- Patent number 11,527,631
- Issue date Dec 13, 2022
- Micron Technology, Inc.
- Nirmal Ramaswamy
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Memory cells having electrically conductive nanodots and apparatus...
- Patent number 10,818,760
- Issue date Oct 27, 2020
- Micron Technology, Inc.
- Nirmal Ramaswamy
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Memory cells having electrically conductive nanodots
- Patent number 10,256,309
- Issue date Apr 9, 2019
- Micron Technology, Inc.
- Nirmal Ramaswamy
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Metal floating gate composite 3D NAND memory devices and associated...
- Patent number 10,141,322
- Issue date Nov 27, 2018
- Intel Corporation
- Fatma A. Simsek-Ege
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interfacial cap for electrode contacts in memory cell arrays
- Patent number 9,691,976
- Issue date Jun 27, 2017
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Scott Sills
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cross-point memory utilizing Ru/Si diode
- Patent number 9,343,674
- Issue date May 17, 2016
- Micron Technology, Inc.
- Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Grant
Interfacial cap for electrode contacts in memory cell arrays
- Patent number 9,306,162
- Issue date Apr 5, 2016
- Sony Corporation
- Scott Sills
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge storage nodes with conductive nanodots
- Patent number 9,202,700
- Issue date Dec 1, 2015
- Micron Technology, Inc.
- Nirmal Ramaswamy
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Charge-trap based memory
- Patent number 9,029,256
- Issue date May 12, 2015
- Micron Technology, Inc.
- Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric charge-trapping materials having doped metal sites
- Patent number 8,846,516
- Issue date Sep 30, 2014
- Micron Technology, Inc.
- Nirmal Ramaswamy
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Cross-point memory utilizing Ru/Si diode
- Patent number 8,803,125
- Issue date Aug 12, 2014
- Micron Technology, Inc.
- Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Grant
Transistors, memory cells and semiconductor constructions
- Patent number 8,796,751
- Issue date Aug 5, 2014
- Micron Technology, Inc.
- Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile memory cells and methods of forming nonvolatile memory...
- Patent number 8,796,661
- Issue date Aug 5, 2014
- Micron Technology, Inc.
- Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge storage nodes with conductive nanodots
- Patent number 8,772,856
- Issue date Jul 8, 2014
- Micron Technology, Inc.
- Nirmal Ramaswamy
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Methods of forming layers comprising epitaxial silicon
- Patent number 8,673,706
- Issue date Mar 18, 2014
- Micron Technology, Inc.
- Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thickened sidewall dielectric for memory cell
- Patent number 8,643,082
- Issue date Feb 4, 2014
- Micron Technology, Inc.
- Ron Weimer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cross-point memory utilizing Ru/Si diode
- Patent number 8,395,140
- Issue date Mar 12, 2013
- Micron Technology, Inc.
- Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-level charge storage transistors and associated methods
- Patent number 8,357,970
- Issue date Jan 22, 2013
- Micron Technology, Inc.
- Gurtej S. Sandhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge-trap based memory
- Patent number 8,258,034
- Issue date Sep 4, 2012
- Micron Technology, Inc.
- Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device having complex oxide nanodots
- Patent number 8,203,179
- Issue date Jun 19, 2012
- Micron Technology, Inc.
- Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thickened sidewall dielectric for memory cell
- Patent number 8,058,140
- Issue date Nov 15, 2011
- Micron Technology, Inc.
- Ron Weimer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuitry
- Patent number 8,035,129
- Issue date Oct 11, 2011
- Micron Technology, Inc.
- Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Floating gate structures
- Patent number 7,989,289
- Issue date Aug 2, 2011
- Intel Corporation
- Tejas Krishnamohan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Atomic layer deposition systems and methods including silicon-conta...
- Patent number 7,943,507
- Issue date May 17, 2011
- Round Rock Research, LLC
- Nirmal Ramaswamy
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Floating-gate memory cell and memory device and electronic system t...
- Patent number 7,898,017
- Issue date Mar 1, 2011
- Micron Technology, Inc.
- Garo Derderian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming complex oxide nanodots for a charge trap
- Patent number 7,851,307
- Issue date Dec 14, 2010
- Micron Technology, Inc.
- Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming layers comprising epitaxial silicon
- Patent number 7,807,535
- Issue date Oct 5, 2010
- Micron Technology, Inc.
- Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuitry
- Patent number 7,768,036
- Issue date Aug 3, 2010
- Micron Technology, Inc.
- Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming layers comprising epitaxial silicon
- Patent number 7,709,326
- Issue date May 4, 2010
- Micron Technology, Inc.
- Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thickened sidewall dielectric for memory cell
- Patent number 7,705,389
- Issue date Apr 27, 2010
- Micron Technology, Inc.
- Ron Weimer
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MEMORY CELLS HAVING ELECTRICALLY CONDUCTIVE NANODOTS AND APPARATUS...
- Publication number 20210091197
- Publication date Mar 25, 2021
- Micron Technology, Inc.
- Nirmal Ramaswamy
- B82 - NANO-TECHNOLOGY
Information Patent Application
MEMORY CELLS HAVING ELECTRICALLY CONDUCTIVE NANODOTS AND APPARATUS...
- Publication number 20190214472
- Publication date Jul 11, 2019
- Micron Technology, Inc.
- Nirmal Ramaswamy
- B82 - NANO-TECHNOLOGY
Information Patent Application
CAPPED ELECTRODE CONTACT FOR RRAM CELLS AND MEMORY CELL ARRAYS
- Publication number 20170271587
- Publication date Sep 21, 2017
- SONY CORPORATION
- Scott Sills
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERFACIAL CAP FOR ELECTRODE CONTACTS IN MEMORY CELL ARRAYS
- Publication number 20160181519
- Publication date Jun 23, 2016
- Scott Sills
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTIVE MEMORY WITH A THERMALLY INSULATING REGION
- Publication number 20160104840
- Publication date Apr 14, 2016
- Beth Cook
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING MEMORY CELLS
- Publication number 20160093708
- Publication date Mar 31, 2016
- Micron Technology, Inc.
- Nirmal Ramaswamy
- B82 - NANO-TECHNOLOGY
Information Patent Application
INTERFACIAL CAP FOR ELECTRODE CONTACTS IN MEMORY CELL ARRAYS
- Publication number 20150194601
- Publication date Jul 9, 2015
- SONY CORPORATION
- Scott Sills
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL FLOATING GATE COMPOSITE 3D NAND MEMORY DEVICES AND ASSOCIATED...
- Publication number 20150171098
- Publication date Jun 18, 2015
- Fatma A. SIMSEK-EGE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Cross-Point Memory Utilizing RU/SI Diode
- Publication number 20140346424
- Publication date Nov 27, 2014
- Micron Technology, Inc.
- Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Application
CHARGE STORAGE NODES WITH CONDUCTIVE NANODOTS
- Publication number 20140302648
- Publication date Oct 9, 2014
- Micron Technology, Inc.
- Nirmal Ramaswamy
- B82 - NANO-TECHNOLOGY
Information Patent Application
THICKENED SIDEWALL DIELECTRIC FOR MEMORY CELL
- Publication number 20140159136
- Publication date Jun 12, 2014
- Micron Technology, Inc.
- Ron Weimer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistors, Memory Cells and Semiconductor Constructions
- Publication number 20140138753
- Publication date May 22, 2014
- Micron Technology, Inc.
- Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Application
CROSS-POINT MEMORY UTILIZING RU/SI DIODE
- Publication number 20130187121
- Publication date Jul 25, 2013
- Micron Technology, Inc.
- Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Application
CHARGE-TRAP BASED MEMORY
- Publication number 20120319172
- Publication date Dec 20, 2012
- Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nonvolatile Memory Cells and Methods Of Forming Nonvolatile Memory...
- Publication number 20120104343
- Publication date May 3, 2012
- Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THICKENED SIDEWALL DIELECTRIC FOR MEMORY CELL
- Publication number 20120032252
- Publication date Feb 9, 2012
- Micron Technology, Inc.
- Ron Weimer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CROSS-POINT MEMORY UTILIZING Ru/Si DIODE
- Publication number 20120007037
- Publication date Jan 12, 2012
- Micron Technology, Inc.
- Nirmal Ramaswamy
- G11 - INFORMATION STORAGE
Information Patent Application
MULTI-LEVEL CHARGE STORAGE TRANSISTORS AND ASSOCIATED METHODS
- Publication number 20110248334
- Publication date Oct 13, 2011
- Gurtej S. Sandhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHARGE STORAGE NODES WITH CONDUCTIVE NANODOTS
- Publication number 20110180865
- Publication date Jul 28, 2011
- Micron Technology, Inc.
- Nirmal Ramaswamy
- B82 - NANO-TECHNOLOGY
Information Patent Application
Flash memory with partially removed blocking dielectric in the word...
- Publication number 20110147827
- Publication date Jun 23, 2011
- Fatma Arzum Simsek-Ege
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL
- Publication number 20110133265
- Publication date Jun 9, 2011
- Micron Technology, Inc.
- Garo Derderian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE HAVING COMPLEX OXIDE NANODOTS
- Publication number 20110062511
- Publication date Mar 17, 2011
- Micron Technology, Inc.
- Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHARGE-TRAP BASED MEMORY
- Publication number 20110049606
- Publication date Mar 3, 2011
- Micron Technology, Inc.
- Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming a Layer Comprising Epitaxial Silicon, and a Field...
- Publication number 20100258857
- Publication date Oct 14, 2010
- Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THICKENED SIDEWALL DIELECTRIC FOR MEMORY CELL
- Publication number 20100197131
- Publication date Aug 5, 2010
- Micron Technology, Inc.
- Ron Weimer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GRADED OXY-NITRIDE TUNNEL BARRIER
- Publication number 20090321809
- Publication date Dec 31, 2009
- Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLOATING GATE STRUCTURES
- Publication number 20090283817
- Publication date Nov 19, 2009
- Tejas Krishnamohan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ATOMIC LAYER DEPOSITION SYSTEMS AND METHODS INCLUDING SILICON-CONTA...
- Publication number 20090215262
- Publication date Aug 27, 2009
- Micron Technology, Inc.
- Nirmal Ramaswamy
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Integrated Circuitry
- Publication number 20090179231
- Publication date Jul 16, 2009
- Nirmal Ramaswamy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THICKENED SIDEWALL DIELECTRIC FOR MEMORY CELL
- Publication number 20090057744
- Publication date Mar 5, 2009
- Micron Technology, Inc.
- Ron Weimer
- H01 - BASIC ELECTRIC ELEMENTS

Nirmal Ramaswamy

Person

Patents Grantslast 30 patents

Memory cells having electrically conductive nanodots and apparatus...

Memory cells having electrically conductive nanodots and apparatus...

Memory cells having electrically conductive nanodots

Metal floating gate composite 3D NAND memory devices and associated...

Interfacial cap for electrode contacts in memory cell arrays

Cross-point memory utilizing Ru/Si diode

Interfacial cap for electrode contacts in memory cell arrays

Charge storage nodes with conductive nanodots

Charge-trap based memory

Dielectric charge-trapping materials having doped metal sites

Cross-point memory utilizing Ru/Si diode

Transistors, memory cells and semiconductor constructions

Nonvolatile memory cells and methods of forming nonvolatile memory...

Charge storage nodes with conductive nanodots

Methods of forming layers comprising epitaxial silicon

Thickened sidewall dielectric for memory cell

Cross-point memory utilizing Ru/Si diode

Multi-level charge storage transistors and associated methods

Charge-trap based memory

Device having complex oxide nanodots

Thickened sidewall dielectric for memory cell

Integrated circuitry

Floating gate structures

Atomic layer deposition systems and methods including silicon-conta...

Floating-gate memory cell and memory device and electronic system t...

Method of forming complex oxide nanodots for a charge trap

Methods of forming layers comprising epitaxial silicon

Integrated circuitry

Methods of forming layers comprising epitaxial silicon

Thickened sidewall dielectric for memory cell

Patents Applicationslast 30 patents

MEMORY CELLS HAVING ELECTRICALLY CONDUCTIVE NANODOTS AND APPARATUS...

MEMORY CELLS HAVING ELECTRICALLY CONDUCTIVE NANODOTS AND APPARATUS...

CAPPED ELECTRODE CONTACT FOR RRAM CELLS AND MEMORY CELL ARRAYS

INTERFACIAL CAP FOR ELECTRODE CONTACTS IN MEMORY CELL ARRAYS

RESISTIVE MEMORY WITH A THERMALLY INSULATING REGION

METHODS OF FORMING MEMORY CELLS

INTERFACIAL CAP FOR ELECTRODE CONTACTS IN MEMORY CELL ARRAYS

METAL FLOATING GATE COMPOSITE 3D NAND MEMORY DEVICES AND ASSOCIATED...

Cross-Point Memory Utilizing RU/SI Diode

CHARGE STORAGE NODES WITH CONDUCTIVE NANODOTS

THICKENED SIDEWALL DIELECTRIC FOR MEMORY CELL

Transistors, Memory Cells and Semiconductor Constructions

CROSS-POINT MEMORY UTILIZING RU/SI DIODE

CHARGE-TRAP BASED MEMORY

Nonvolatile Memory Cells and Methods Of Forming Nonvolatile Memory...

THICKENED SIDEWALL DIELECTRIC FOR MEMORY CELL

CROSS-POINT MEMORY UTILIZING Ru/Si DIODE

MULTI-LEVEL CHARGE STORAGE TRANSISTORS AND ASSOCIATED METHODS

CHARGE STORAGE NODES WITH CONDUCTIVE NANODOTS

Flash memory with partially removed blocking dielectric in the word...

MEMORY CELL

DEVICE HAVING COMPLEX OXIDE NANODOTS

CHARGE-TRAP BASED MEMORY

Method of Forming a Layer Comprising Epitaxial Silicon, and a Field...

THICKENED SIDEWALL DIELECTRIC FOR MEMORY CELL

GRADED OXY-NITRIDE TUNNEL BARRIER

FLOATING GATE STRUCTURES

ATOMIC LAYER DEPOSITION SYSTEMS AND METHODS INCLUDING SILICON-CONTA...

Integrated Circuitry

THICKENED SIDEWALL DIELECTRIC FOR MEMORY CELL