Nobuo FUJIWARA

Person

Chiyoda-ku, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device including an active region that includes a swi...
- Patent number 11,189,689
- Issue date Nov 30, 2021
- Mitsubishi Electric Corporation
- Masayuki Furuhashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thermoelectric converter and manufacturing method for manufacturing...
- Patent number 10,497,850
- Issue date Dec 3, 2019
- Mitsubishi Electric Corporation
- Akira Yamashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a gate trench and an outside trench
- Patent number 10,453,951
- Issue date Oct 22, 2019
- Mitsubishi Electric Corporation
- Yutaka Fukui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and manufacturing method therefor
- Patent number 9,773,874
- Issue date Sep 26, 2017
- Mitsubishi Electric Corporation
- Nobuo Fujiwara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and manufacturing method therefor
- Patent number 9,691,858
- Issue date Jun 27, 2017
- Mitsubishi Electric Corporation
- Nobuo Fujiwara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a layered wiring structure with hard ma...
- Patent number 6,822,334
- Issue date Nov 23, 2004
- Renesas Technology Corp.
- Katsunobu Hori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 6,232,209
- Issue date May 15, 2001
- Mitsubishi Denki Kabushiki Kaisha
- Nobuo Fujiwara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing contact structure
- Patent number 6,156,639
- Issue date Dec 5, 2000
- Mitsubishi Denki Kabushiki Kaisha
- Tetsuhiro Fukao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma reaction apparatus
- Patent number 5,695,597
- Issue date Dec 9, 1997
- Mitsubishi Denki Kabushiki Kaisha
- Nobuo Fujiwara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device having a capacitor
- Patent number 5,668,041
- Issue date Sep 16, 1997
- Mitsubishi Denki Kabushiki Kaisha
- Tomonori Okudaira
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and a method of manufacturing thereof
- Patent number 5,652,186
- Issue date Jul 29, 1997
- Mitsubishi Denki Kabushiki Kaisha
- Tomonori Okudaira
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device with high dielectric...
- Patent number 5,534,458
- Issue date Jul 9, 1996
- Mitsubishi Denki Kabushiki Kaisha
- Tomonori Okudaira
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with high dielectric capacitor having sidewall...
- Patent number 5,442,213
- Issue date Aug 15, 1995
- Mitsubishi Denki Kabushiki Kaisha
- Tomonori Okudaira
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of plasma etching
- Patent number 5,435,886
- Issue date Jul 25, 1995
- Mitsubishi Denki Kabushiki Kaisha
- Nobuo Fujiwara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of etching a wafer having high anisotropy with a plasma gas...
- Patent number 5,304,775
- Issue date Apr 19, 1994
- Mitsubishi Denki Kabushiki Kaisha
- Nobuo Fujiwara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ECR plasma reaction apparatus having uniform magnetic field gradient
- Patent number 5,292,395
- Issue date Mar 8, 1994
- Mitsubishi Denki Kabushiki Kaisha
- Nobuo Fujiwara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor wafer treating device utilizing a plasma
- Patent number 4,982,138
- Issue date Jan 1, 1991
- Mitsubishi Denki Kabushiki Kaisha
- Nobuo Fujiwara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor wafer treating device utilizing ECR plasma
- Patent number 4,915,979
- Issue date Apr 10, 1990
- Mitsubishi Denki Kabushiki Kaisha
- Tomoaki Ishida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor wafer treating apparatus utilizing a plasma
- Patent number 4,877,509
- Issue date Oct 31, 1989
- Mitsubishi Denki Kabushiki Kaisha
- Toshiaki Ogawa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20230147932
- Publication date May 11, 2023
- Mitsubishi Electric Corporation
- Yoichiro TARUI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20200235203
- Publication date Jul 23, 2020
- Mitsubishi Electric Corporation
- Masayuki FURUHASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20170301788
- Publication date Oct 19, 2017
- MITSUBISHI ELECTRIC CORPORATION
- Yutaka FUKUI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THERMOELECTRIC CONVERTER AND MANUFACTURING METHOD FOR MANUFACTURING...
- Publication number 20170040522
- Publication date Feb 9, 2017
- Mitsubishi Electric Corporation
- Akira YAMASHITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
- Publication number 20150287789
- Publication date Oct 8, 2015
- Mitsubishi Electric Corporation
- Nobuo Fujiwara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MANUFACTURING SYSTEM AND METHOD
- Publication number 20090299512
- Publication date Dec 3, 2009
- Renesas Technology Corp.
- Junichi TANAKA
- G05 - CONTROLLING REGULATING
Information Patent Application
Semiconductor device having a layered wiring structure
- Publication number 20020014695
- Publication date Feb 7, 2002
- Mitsubishi Denki Kabushiki Kaisha
- Katsunobu Hori
- H01 - BASIC ELECTRIC ELEMENTS

Nobuo FUJIWARA

Person

Patents Grantslast 30 patents

Semiconductor device including an active region that includes a swi...

Thermoelectric converter and manufacturing method for manufacturing...

Semiconductor device having a gate trench and an outside trench

Silicon carbide semiconductor device and manufacturing method therefor

Silicon carbide semiconductor device and manufacturing method therefor

Semiconductor device having a layered wiring structure with hard ma...

Semiconductor device and manufacturing method thereof

Method for manufacturing contact structure

Plasma reaction apparatus

Method of manufacturing a semiconductor device having a capacitor

Semiconductor device and a method of manufacturing thereof

Method of manufacturing a semiconductor device with high dielectric...

Semiconductor device with high dielectric capacitor having sidewall...

Method of plasma etching

Method of etching a wafer having high anisotropy with a plasma gas...

ECR plasma reaction apparatus having uniform magnetic field gradient

Semiconductor wafer treating device utilizing a plasma

Semiconductor wafer treating device utilizing ECR plasma

Semiconductor wafer treating apparatus utilizing a plasma

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

THERMOELECTRIC CONVERTER AND MANUFACTURING METHOD FOR MANUFACTURING...

SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

SEMICONDUCTOR MANUFACTURING SYSTEM AND METHOD

Semiconductor device having a layered wiring structure