Patrick Press

Person

Dresden, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Multiple gate transistor having homogenously silicided fin end port...
- Patent number 8,791,509
- Issue date Jul 29, 2014
- GLOBALFOUNDRIES Inc.
- Sven Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique for exposing a placeholder material in a replacement gate...
- Patent number 8,357,575
- Issue date Jan 22, 2013
- GLOBALFOUNDRIES Inc.
- Klaus Hempel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising a metal gate stack of reduced heigh...
- Patent number 8,293,610
- Issue date Oct 23, 2012
- GLOBALFOUNDRIES Inc.
- Sven Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique for exposing a placeholder material in a replacement gate...
- Patent number 8,247,281
- Issue date Aug 21, 2012
- GLOBALFOUNDRIES, INC.
- Klaus Hempel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Drive current adjustment for transistors by local gate engineering
- Patent number 8,188,871
- Issue date May 29, 2012
- Advanced Micro Devices, Inc.
- Manfred Horstmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising NMOS and PMOS transistors with embe...
- Patent number 8,039,335
- Issue date Oct 18, 2011
- Advanced Micro Devices, Inc.
- Sven Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising NMOS and PMOS transistors with embe...
- Patent number 7,893,503
- Issue date Feb 22, 2011
- Advanced Micro Devices, Inc.
- Sven Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique for forming an isolation trench as a stress source for st...
- Patent number 7,833,874
- Issue date Nov 16, 2010
- GLOBALFOUNDRIES Inc.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor having a locally provided metal silicide region in conta...
- Patent number 7,799,682
- Issue date Sep 21, 2010
- GLOBALFOUNDRIES Inc.
- Sven Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating low contact resistance CMOS circuits
- Patent number 7,754,554
- Issue date Jul 13, 2010
- GLOBALFOUNDRIES Inc.
- Igor Peidous
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique for locally adapting transistor characteristics by using...
- Patent number 7,745,334
- Issue date Jun 29, 2010
- Advanced Micro Devices, Inc.
- Patrick Press
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising NMOS and PMOS transistors with embe...
- Patent number 7,741,167
- Issue date Jun 22, 2010
- Advanced Micro Devices, Inc.
- Sven Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors and methods for fabricating the same
- Patent number 7,605,045
- Issue date Oct 20, 2009
- Advanced Micro Devices, Inc.
- Igor Peidous
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique for reducing silicide defects by reducing deleterious eff...
- Patent number 7,384,877
- Issue date Jun 10, 2008
- Advanced Micro Devices, Inc.
- Volker Kahlert
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TECHNIQUE FOR EXPOSING A PLACEHOLDER MATERIAL IN A REPLACEMENT GATE...
- Publication number 20120282764
- Publication date Nov 8, 2012
- Klaus Hempel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Maintaining Integrity of a High-K Gate Stack After Embedding a Stre...
- Publication number 20110266625
- Publication date Nov 3, 2011
- GLOBALFOUNDRIES INC.
- Richard Carter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE COMPRISING NMOS AND PMOS TRANSISTORS WITH EMBE...
- Publication number 20110104878
- Publication date May 5, 2011
- Advanced Micro Devices, Inc.
- SVEN BEYER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUE FOR EXPOSING A PLACEHOLDER MATERIAL IN A REPLACEMENT GATE...
- Publication number 20100330790
- Publication date Dec 30, 2010
- Klaus Hempel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE COMPRISING NMOS AND PMOS TRANSISTORS WITH EMBE...
- Publication number 20100187635
- Publication date Jul 29, 2010
- Advanced Micro Devices, Inc.
- SVEN BEYER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIPLE GATE TRANSISTOR HAVING HOMOGENOUSLY SILICIDED FIN END PORT...
- Publication number 20100133614
- Publication date Jun 3, 2010
- Sven Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRIVE CURRENT ADJUSTMENT FOR TRANSISTORS BY LOCAL GATE ENGINEERING
- Publication number 20100025776
- Publication date Feb 4, 2010
- Manfred Horstmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE COMPRISING A METAL GATE STACK OF REDUCED HEIGH...
- Publication number 20090218639
- Publication date Sep 3, 2009
- Sven Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING A DEEP TRENCH IN AN SOI DEVICE BY REDUCING THE S...
- Publication number 20090032855
- Publication date Feb 5, 2009
- Patrick Press
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A SEMICONDUCTOR STRUCTURE COMPRISING AN IMPLANTAT...
- Publication number 20080299733
- Publication date Dec 4, 2008
- Patrick Press
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FABRICATING LOW CONTACT RESISTANCE CMOS CIRCUITS
- Publication number 20080182370
- Publication date Jul 31, 2008
- Igor Peidous
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE COMPRISING NMOS AND PMOS TRANSISTORS WITH EMBE...
- Publication number 20080099794
- Publication date May 1, 2008
- Sven Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUE FOR LOCALLY ADAPTING TRANSISTOR CHARACTERISTICS BY USING...
- Publication number 20080081471
- Publication date Apr 3, 2008
- Patrick Press
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR HAVING A LOCALLY PROVIDED METAL SILICIDE REGION IN CONTA...
- Publication number 20080054371
- Publication date Mar 6, 2008
- Sven Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTORS AND METHODS FOR FABRICATING THE SAME
- Publication number 20080014704
- Publication date Jan 17, 2008
- Igor Peidous
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF INCREASING TRANSISTOR PERFORMANCE BY DOPANT ACTIVATION AF...
- Publication number 20070281472
- Publication date Dec 6, 2007
- Patrick Press
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF SILICIDED SURFACES FOR SILICON/CARBON SOURCE/DRAIN REG...
- Publication number 20070200176
- Publication date Aug 30, 2007
- Thorsten Kammler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUE FOR FORMING AN ISOLATION TRENCH AS A STRESS SOURCE FOR ST...
- Publication number 20070155121
- Publication date Jul 5, 2007
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUE FOR REDUCING SILICIDE DEFECTS BY REDUCING DELETERIOUS EFF...
- Publication number 20070045226
- Publication date Mar 1, 2007
- Volker Kahlert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUE FOR REDUCING SILICIDE NON-UNIFORMITIES BY ADAPTING A VERT...
- Publication number 20060270202
- Publication date Nov 30, 2006
- Frank Wirbeleit
- H01 - BASIC ELECTRIC ELEMENTS

Patrick Press

Person

Patents Grantslast 30 patents

Multiple gate transistor having homogenously silicided fin end port...

Technique for exposing a placeholder material in a replacement gate...

Semiconductor device comprising a metal gate stack of reduced heigh...

Technique for exposing a placeholder material in a replacement gate...

Drive current adjustment for transistors by local gate engineering

Semiconductor device comprising NMOS and PMOS transistors with embe...

Semiconductor device comprising NMOS and PMOS transistors with embe...

Technique for forming an isolation trench as a stress source for st...

Transistor having a locally provided metal silicide region in conta...

Methods for fabricating low contact resistance CMOS circuits

Technique for locally adapting transistor characteristics by using...

Semiconductor device comprising NMOS and PMOS transistors with embe...

Field effect transistors and methods for fabricating the same

Technique for reducing silicide defects by reducing deleterious eff...

Patents Applicationslast 30 patents

TECHNIQUE FOR EXPOSING A PLACEHOLDER MATERIAL IN A REPLACEMENT GATE...

Maintaining Integrity of a High-K Gate Stack After Embedding a Stre...

SEMICONDUCTOR DEVICE COMPRISING NMOS AND PMOS TRANSISTORS WITH EMBE...

TECHNIQUE FOR EXPOSING A PLACEHOLDER MATERIAL IN A REPLACEMENT GATE...

SEMICONDUCTOR DEVICE COMPRISING NMOS AND PMOS TRANSISTORS WITH EMBE...

MULTIPLE GATE TRANSISTOR HAVING HOMOGENOUSLY SILICIDED FIN END PORT...

DRIVE CURRENT ADJUSTMENT FOR TRANSISTORS BY LOCAL GATE ENGINEERING

SEMICONDUCTOR DEVICE COMPRISING A METAL GATE STACK OF REDUCED HEIGH...

METHOD FOR FORMING A DEEP TRENCH IN AN SOI DEVICE BY REDUCING THE S...

METHOD OF FORMING A SEMICONDUCTOR STRUCTURE COMPRISING AN IMPLANTAT...

METHODS FOR FABRICATING LOW CONTACT RESISTANCE CMOS CIRCUITS

SEMICONDUCTOR DEVICE COMPRISING NMOS AND PMOS TRANSISTORS WITH EMBE...

TECHNIQUE FOR LOCALLY ADAPTING TRANSISTOR CHARACTERISTICS BY USING...

TRANSISTOR HAVING A LOCALLY PROVIDED METAL SILICIDE REGION IN CONTA...

FIELD EFFECT TRANSISTORS AND METHODS FOR FABRICATING THE SAME

METHOD OF INCREASING TRANSISTOR PERFORMANCE BY DOPANT ACTIVATION AF...

FORMATION OF SILICIDED SURFACES FOR SILICON/CARBON SOURCE/DRAIN REG...

TECHNIQUE FOR FORMING AN ISOLATION TRENCH AS A STRESS SOURCE FOR ST...

TECHNIQUE FOR REDUCING SILICIDE DEFECTS BY REDUCING DELETERIOUS EFF...

TECHNIQUE FOR REDUCING SILICIDE NON-UNIFORMITIES BY ADAPTING A VERT...