Paul Edward Gee

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Reduced pattern loading using silicon oxide multi-layers
- Patent number 8,716,154
- Issue date May 6, 2014
- Applied Materials, Inc.
- Sidharth Bhatia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two silicon-containing precursors for gapfill enhancing dielectric...
- Patent number 8,664,127
- Issue date Mar 4, 2014
- Applied Materials, Inc.
- Sidharth Bhatia
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Preferential dielectric gapfill
- Patent number 8,476,142
- Issue date Jul 2, 2013
- Applied Materials, Inc.
- Sasha Kweskin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced pattern loading using bis(diethylamino)silane (C8H22N2Si) a...
- Patent number 8,236,708
- Issue date Aug 7, 2012
- Applied Materials, Inc.
- Sasha Kweskin
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Precursor addition to silicon oxide CVD for improved low temperatur...
- Patent number 8,012,887
- Issue date Sep 6, 2011
- Applied Materials, Inc.
- Shankar Venkataraman
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon-ozone CVD with reduced pattern loading using incubation per...
- Patent number 7,994,019
- Issue date Aug 9, 2011
- Applied Materials, Inc.
- Sasha Kweskin
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Chemical vapor deposition of high quality flow-like silicon dioxide...
- Patent number 7,825,038
- Issue date Nov 2, 2010
- Applied Materials, Inc.
- Nitin K. Ingle
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method and apparatus for forming a dielectric film using helium as...
- Patent number 6,599,574
- Issue date Jul 29, 2003
- Applied Materials Inc.
- Ellie Yieh
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of forming phosphosilicate glass having a high wet-etch rate
- Patent number 6,153,540
- Issue date Nov 28, 2000
- Applied Materials, Inc.
- Ishing Lou
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Methods and apparatus for forming ultra-shallow doped regions using...
- Patent number 6,099,647
- Issue date Aug 8, 2000
- Applied Materials, Inc.
- Ellie Yieh
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Methods and apparatus for forming ultra-shallow doped regions using...
- Patent number 5,994,209
- Issue date Nov 30, 1999
- Applied Materials, Inc.
- Ellie Yieh
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
ISOTROPIC SILICON NITRIDE REMOVAL
- Publication number 20220293430
- Publication date Sep 15, 2022
- Applied Materials, Inc.
- Mikhail Korolik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOTROPIC SILICON NITRIDE REMOVAL
- Publication number 20210111033
- Publication date Apr 15, 2021
- Applied Materials, Inc.
- Mikhail Korolik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCED PATTERN LOADING USING SILICON OXIDE MULTI-LAYERS
- Publication number 20120225565
- Publication date Sep 6, 2012
- Applied Materials, Inc.
- Sidharth Bhatia
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
TWO SILICON-CONTAINING PRECURSORS FOR GAPFILL ENHANCING DIELECTRIC...
- Publication number 20120094468
- Publication date Apr 19, 2012
- Applied Materials, Inc.
- Sidharth Bhatia
- B82 - NANO-TECHNOLOGY
Information Patent Application
PREFERENTIAL DIELECTRIC GAPFILL
- Publication number 20110250731
- Publication date Oct 13, 2011
- Applied Materials, Inc.
- Sasha Kweskin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCED PATTERN LOADING USING BIS(DIETHYLAMINO)SILANE (C8H22N2Si) A...
- Publication number 20110223774
- Publication date Sep 15, 2011
- Applied Materials, Inc.
- Sasha Kweskin
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
PRECURSOR ADDITION TO SILICON OXIDE CVD FOR IMPROVED LOW TEMPERATUR...
- Publication number 20100159711
- Publication date Jun 24, 2010
- Applied Materials, Inc.
- Shankar Venkataraman
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
GAS MIXING SWIRL INSERT ASSEMBLY
- Publication number 20090120364
- Publication date May 14, 2009
- Applied Materials, Inc.
- Edwin C. Suarez
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
CHEMICAL VAPOR DEPOSITION OF HIGH QUALITY FLOW-LIKE SILICON DIOXIDE...
- Publication number 20090031953
- Publication date Feb 5, 2009
- Applied Materials, Inc.
- Nitin K. Ingle
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
VACUUM CHUCKING HEATER OF AXISYMMETRICAL AND UNIFORM THERMAL PROFILE
- Publication number 20090031955
- Publication date Feb 5, 2009
- Applied Materials, Inc.
- Siqing Lu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
CHEMICAL VAPOR DEPOSITION OF HIGH QUALITY FLOW-LIKE SILICON DIOXIDE...
- Publication number 20070281496
- Publication date Dec 6, 2007
- Applied Materials, Inc.
- Nitin K. Ingle
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Paul Edward Gee

Person

Patents Grantslast 30 patents

Reduced pattern loading using silicon oxide multi-layers

Two silicon-containing precursors for gapfill enhancing dielectric...

Preferential dielectric gapfill

Reduced pattern loading using bis(diethylamino)silane (C8H22N2Si) a...

Precursor addition to silicon oxide CVD for improved low temperatur...

Silicon-ozone CVD with reduced pattern loading using incubation per...

Chemical vapor deposition of high quality flow-like silicon dioxide...

Method and apparatus for forming a dielectric film using helium as...

Method of forming phosphosilicate glass having a high wet-etch rate

Methods and apparatus for forming ultra-shallow doped regions using...

Methods and apparatus for forming ultra-shallow doped regions using...

Patents Applicationslast 30 patents

ISOTROPIC SILICON NITRIDE REMOVAL

ISOTROPIC SILICON NITRIDE REMOVAL

REDUCED PATTERN LOADING USING SILICON OXIDE MULTI-LAYERS

TWO SILICON-CONTAINING PRECURSORS FOR GAPFILL ENHANCING DIELECTRIC...

PREFERENTIAL DIELECTRIC GAPFILL

REDUCED PATTERN LOADING USING BIS(DIETHYLAMINO)SILANE (C8H22N2Si) A...

PRECURSOR ADDITION TO SILICON OXIDE CVD FOR IMPROVED LOW TEMPERATUR...

GAS MIXING SWIRL INSERT ASSEMBLY

CHEMICAL VAPOR DEPOSITION OF HIGH QUALITY FLOW-LIKE SILICON DIOXIDE...

VACUUM CHUCKING HEATER OF AXISYMMETRICAL AND UNIFORM THERMAL PROFILE

CHEMICAL VAPOR DEPOSITION OF HIGH QUALITY FLOW-LIKE SILICON DIOXIDE...