Paul Ronsheim

Person

Hopewell Junction, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing scaled equivalent oxide thickness gate stac...
- Patent number 9,099,461
- Issue date Aug 4, 2015
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to enable compressively strained pFET channel in a FinFET st...
- Patent number 8,900,973
- Issue date Dec 2, 2014
- International Business Machines Corporation
- Nathaniel C. Berliner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Specimen handling apparatus
- Patent number 8,347,741
- Issue date Jan 8, 2013
- International Business Machines Corporation
- Michael Hatzistergos
- G01 - MEASURING TESTING
Information Patent Grant
Particle emission analysis for semiconductor fabrication steps
- Patent number 8,158,449
- Issue date Apr 17, 2012
- International Business Machines Corporation
- Cyril Cabral, Jr.
- G01 - MEASURING TESTING
Information Patent Grant
Shallow extension regions having abrupt extension junctions
- Patent number 8,114,748
- Issue date Feb 14, 2012
- International Business Machines Corporation
- Kam-Leung Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Chemical treatment to retard diffusion in a semiconductor overlayer
- Patent number 7,071,103
- Issue date Jul 4, 2006
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for improving CVD film quality utilizing polysilicon getterer
- Patent number 6,749,684
- Issue date Jun 15, 2004
- International Business Machines Corporation
- Huajie Chen
- C30 - CRYSTAL GROWTH
Information Patent Grant
Use of disposable spacer to introduce gettering in SOI layer
- Patent number 6,635,517
- Issue date Oct 21, 2003
- International Business Machines Corporation
- Tze-Chiang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for fabricating an MOS device having highly-localized halo...
- Patent number 6,509,241
- Issue date Jan 21, 2003
- International Business Machines Corporation
- Heemyong Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped structures containing diffusion barriers
- Patent number 6,399,434
- Issue date Jun 4, 2002
- International Business Machines Corporation
- Susan E. Chaloux
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of forming an ultra-shallow junction dopant layer having a...
- Patent number 6,387,782
- Issue date May 14, 2002
- International Business Machines Corporation
- Hiroyuki Akatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating different gate oxide thicknesses within the...
- Patent number 6,335,262
- Issue date Jan 1, 2002
- International Business Machines Corporation
- Scott W. Crowder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra-shallow junction dopant layer having a peak concentration wit...
- Patent number 6,329,704
- Issue date Dec 11, 2001
- International Business Machines Corporation
- Hiroyuki Akatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quantum conductive recrystallization barrier layers
- Patent number 6,194,736
- Issue date Feb 27, 2001
- International Business Machines Corporation
- Susan E. Chaloux
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for modified oxidation of a semiconductor substrate using c...
- Patent number 6,114,257
- Issue date Sep 5, 2000
- International Business Machines Corporation
- Paul A. Ronsheim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making heterojunction bipolar transistor with self-align...
- Patent number 5,656,514
- Issue date Aug 12, 1997
- International Business Machines Corporation
- David Ahlgren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a doped region in a semiconductor substrate utili...
- Patent number 5,385,850
- Issue date Jan 31, 1995
- International Business Machines Corporation
- Jack O. Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for controlling interfacial oxide at a polycrystalline/monoc...
- Patent number 5,194,397
- Issue date Mar 16, 1993
- International Business Machines Corporation
- Robert K. Cook
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF MANUFACTURING SCALED EQUIVALENT OXIDE THICKNESS GATE STAC...
- Publication number 20130330843
- Publication date Dec 12, 2013
- GLOBALFOUNDRIES INC.
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO ENABLE COMPRESSIVELY STRAINED PFET CHANNEL IN A FINFET ST...
- Publication number 20130052801
- Publication date Feb 28, 2013
- International Business Machines Corporation
- Nathaniel C. Berliner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANNEALING TECHNIQUES FOR HIGH PERFORMANCE COMPLEMENTARY METAL OXIDE...
- Publication number 20120190216
- Publication date Jul 26, 2012
- International Business Machines Corporation
- Kevin K. Chan
- B82 - NANO-TECHNOLOGY
Information Patent Application
INTEGRATED METALLIC MICROTIP COUPON STRUCTURE FOR ATOM PROBE TOMOGR...
- Publication number 20120117696
- Publication date May 10, 2012
- International Business Machines Corporation
- Michael Hatzistergos
- B82 - NANO-TECHNOLOGY
Information Patent Application
SPECIMEN HANDLING APPARATUS
- Publication number 20110290039
- Publication date Dec 1, 2011
- International Business Machines Corporation
- Michael Hatzistergos
- G01 - MEASURING TESTING
Information Patent Application
SHALLOW EXTENSION REGIONS HAVING ABRUPT EXTENSION JUNCTIONS
- Publication number 20100327375
- Publication date Dec 30, 2010
- International Business Machines Corporation
- Kam-Leung Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARTICLE EMISSION ANALYSIS FOR SEMICONDUCTOR FABRICATION STEPS
- Publication number 20100084656
- Publication date Apr 8, 2010
- Cyril Cabral, JR.
- G01 - MEASURING TESTING
Information Patent Application
Method for Forming Non-Amorphous, Ultra-Thin Semiconductor Devices...
- Publication number 20080311732
- Publication date Dec 18, 2008
- International Business Machines Corporation
- Omer Dokumaci
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHEMICAL TREATMENT TO RETARD DIFFUSION IN A SEMICONDUCTOR OVERLAYER
- Publication number 20060024934
- Publication date Feb 2, 2006
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating different gate oxide thickness within the sa...
- Publication number 20030094660
- Publication date May 22, 2003
- Scott W. Crowder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Use of disposable spacer to introduce gettering in SOI layer
- Publication number 20030032251
- Publication date Feb 13, 2003
- International Business Machines Corporation
- Tze-Chiang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reducing threshold voltage roll-up/roll-off effect for MOSFETS
- Publication number 20020177264
- Publication date Nov 28, 2002
- International Business Machines Corporation
- Hiroyuki Akatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for fabricating an MOS device having highly-localized halo...
- Publication number 20020072176
- Publication date Jun 13, 2002
- Heemyong Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process of forming an ultra-shallow junction dopant layer having a...
- Publication number 20010030333
- Publication date Oct 18, 2001
- Hiroyuki Akatsu
- H01 - BASIC ELECTRIC ELEMENTS

Paul Ronsheim

Person

Patents Grantslast 30 patents

Method of manufacturing scaled equivalent oxide thickness gate stac...

Method to enable compressively strained pFET channel in a FinFET st...

Specimen handling apparatus

Particle emission analysis for semiconductor fabrication steps

Shallow extension regions having abrupt extension junctions

Chemical treatment to retard diffusion in a semiconductor overlayer

Method for improving CVD film quality utilizing polysilicon getterer

Use of disposable spacer to introduce gettering in SOI layer

Process for fabricating an MOS device having highly-localized halo...

Doped structures containing diffusion barriers

Process of forming an ultra-shallow junction dopant layer having a...

Method for fabricating different gate oxide thicknesses within the...

Ultra-shallow junction dopant layer having a peak concentration wit...

Quantum conductive recrystallization barrier layers

Process for modified oxidation of a semiconductor substrate using c...

Method for making heterojunction bipolar transistor with self-align...

Method of forming a doped region in a semiconductor substrate utili...

Method for controlling interfacial oxide at a polycrystalline/monoc...

Patents Applicationslast 30 patents

METHOD OF MANUFACTURING SCALED EQUIVALENT OXIDE THICKNESS GATE STAC...

METHOD TO ENABLE COMPRESSIVELY STRAINED PFET CHANNEL IN A FINFET ST...

ANNEALING TECHNIQUES FOR HIGH PERFORMANCE COMPLEMENTARY METAL OXIDE...

INTEGRATED METALLIC MICROTIP COUPON STRUCTURE FOR ATOM PROBE TOMOGR...

SPECIMEN HANDLING APPARATUS

SHALLOW EXTENSION REGIONS HAVING ABRUPT EXTENSION JUNCTIONS

PARTICLE EMISSION ANALYSIS FOR SEMICONDUCTOR FABRICATION STEPS

Method for Forming Non-Amorphous, Ultra-Thin Semiconductor Devices...

CHEMICAL TREATMENT TO RETARD DIFFUSION IN A SEMICONDUCTOR OVERLAYER

Method for fabricating different gate oxide thickness within the sa...

Use of disposable spacer to introduce gettering in SOI layer

Reducing threshold voltage roll-up/roll-off effect for MOSFETS

Process for fabricating an MOS device having highly-localized halo...

Process of forming an ultra-shallow junction dopant layer having a...