Pranita Kulkarni

Person

Singerlands, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Device and method for fabricating thin semiconductor channel and bu...
- Patent number 9,478,658
- Issue date Oct 25, 2016
- GLOBALFOUNDRIES Inc.
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device and method for fabricating thin semiconductor channel and bu...
- Patent number 9,461,169
- Issue date Oct 4, 2016
- GLOBALFOUNDRIES Inc.
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method to fabricate resistor on finFET processes
- Patent number 9,385,050
- Issue date Jul 5, 2016
- GLOBALFOUNDRIES Inc.
- Wilfried Ernst-August Haensch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming a semiconductor device with a protected gate cap...
- Patent number 9,263,537
- Issue date Feb 16, 2016
- GLOBALFOUNDRIES Inc.
- Daniel Pham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET with work function adjusted metal backgate
- Patent number 9,105,577
- Issue date Aug 11, 2015
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation structures
- Patent number 9,059,243
- Issue date Jun 16, 2015
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source and drain doping profile control employing carbon-doped semi...
- Patent number 9,059,292
- Issue date Jun 16, 2015
- International Business Machines Corporation
- Viorel Ontalus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried channel field-effect transistors
- Patent number 9,059,321
- Issue date Jun 16, 2015
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compressively stressed FET device structures
- Patent number 9,054,211
- Issue date Jun 9, 2015
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with on chip planar diode and CMOS devices
- Patent number 9,048,108
- Issue date Jun 2, 2015
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method to modulate threshold voltage for high-K metal...
- Patent number 9,041,116
- Issue date May 26, 2015
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit including DRAM and SRAM/logic
- Patent number 8,994,085
- Issue date Mar 31, 2015
- International Business Machines Corporation
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried-channel field-effect transistors
- Patent number 8,928,096
- Issue date Jan 6, 2015
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming a semiconductor device with a protected gate cap...
- Patent number 8,906,754
- Issue date Dec 9, 2014
- GLOBALFOUNDRIES Inc.
- Daniel Pham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to enable compressively strained pFET channel in a FinFET st...
- Patent number 8,900,973
- Issue date Dec 2, 2014
- International Business Machines Corporation
- Nathaniel C. Berliner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device having reduce capacitance, access resistance, and con...
- Patent number 8,900,936
- Issue date Dec 2, 2014
- International Business Machines Corporation
- Pranita Kulkarni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit having raised source drains devices with reduced...
- Patent number 8,895,379
- Issue date Nov 25, 2014
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Raised source/drain structure for enhanced strain coupling from str...
- Patent number 8,890,245
- Issue date Nov 18, 2014
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming a semiconductor device with a protected gate cap...
- Patent number 8,871,582
- Issue date Oct 28, 2014
- GLOBALFOUNDRIES Inc.
- Daniel Pham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained thin body CMOS device having vertically raised source/drai...
- Patent number 8,860,138
- Issue date Oct 14, 2014
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET-compatible metal-insulator-metal capacitor
- Patent number 8,860,107
- Issue date Oct 14, 2014
- International Business Machines Corporation
- Wilfried E. Haensch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Raised source/drain structure for enhanced strain coupling from str...
- Patent number 8,853,038
- Issue date Oct 7, 2014
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit including DRAM and SRAM/logic
- Patent number 8,835,330
- Issue date Sep 16, 2014
- International Business Machines Corporation
- Kangguo Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Highly scaled ETSOI floating body memory and memory circuit
- Patent number 8,835,900
- Issue date Sep 16, 2014
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junctionless transistor
- Patent number 8,803,233
- Issue date Aug 12, 2014
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET non-volatile memory and method of fabrication
- Patent number 8,785,273
- Issue date Jul 22, 2014
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inversion mode varactor
- Patent number 8,742,485
- Issue date Jun 3, 2014
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three dimensional FET devices having different device widths
- Patent number 8,742,508
- Issue date Jun 3, 2014
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Implant free extremely thin semiconductor devices
- Patent number 8,710,588
- Issue date Apr 29, 2014
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET with recessed channel film and abrupt junctions
- Patent number 8,691,650
- Issue date Apr 8, 2014
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DEVICE AND METHOD FOR FABRICATING THIN SEMICONDUCTOR CHANNEL AND BU...
- Publication number 20150255603
- Publication date Sep 10, 2015
- International Business Machines Corporation
- KANGGUO CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING A SEMICONDUCTOR DEVICE WITH A PROTECTED GATE CAP...
- Publication number 20150041869
- Publication date Feb 12, 2015
- GLOBALFOUNDRIES INC.
- Daniel Pham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING A SEMICONDUCTOR DEVICE WITH A PROTECTED GATE CAP...
- Publication number 20140264486
- Publication date Sep 18, 2014
- International Business Machines Corporation
- Daniel Pham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING A SEMICONDUCTOR DEVICE WITH A PROTECTED GATE CAP...
- Publication number 20140264487
- Publication date Sep 18, 2014
- International Business Machines Corporation
- Daniel Pham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Inversion Mode Varactor
- Publication number 20140049315
- Publication date Feb 20, 2014
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Source and Drain Doping Profile Control Employing Carbon-Doped Semi...
- Publication number 20140035000
- Publication date Feb 6, 2014
- International Business Machines Corporation
- Viorel Ontalus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE HAVING NFET EXTENSION LAST IMPLANTS
- Publication number 20140024181
- Publication date Jan 23, 2014
- International Business Machines Corporation
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING TRANSISTOR WITH RECESSED CHANNEL AND RAISED...
- Publication number 20140017859
- Publication date Jan 16, 2014
- International Business Machines Corporation
- Kangguo CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHALLOW TRENCH ISOLATION STRUCTURES
- Publication number 20130344677
- Publication date Dec 26, 2013
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHALLOW TRENCH ISOLATION STRUCTURES
- Publication number 20130341754
- Publication date Dec 26, 2013
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and Method to Modulate Threshold Voltage For High-K Metal...
- Publication number 20130313643
- Publication date Nov 28, 2013
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT WITH ON CHIP PLANAR DIODE AND CMOS DEVICES
- Publication number 20130313651
- Publication date Nov 28, 2013
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD TO MODULATE THRESHOLD VOLTAGE FOR HIGH-K METAL...
- Publication number 20130316503
- Publication date Nov 28, 2013
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BURIED-CHANNEL FIELD-EFFECT TRANSISTORS
- Publication number 20130299906
- Publication date Nov 14, 2013
- International Business Machines Corporation
- KANGGUO CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BURIED-CHANNEL FIELD-EFFECT TRANSISTORS
- Publication number 20130302949
- Publication date Nov 14, 2013
- International Business Machines Corporation
- KANGGUO CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET WITH THIN SEMICONDUCTOR CHANNEL AND EMBEDDED STRESSOR WITH E...
- Publication number 20130302962
- Publication date Nov 14, 2013
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE WITH TRANSISTORS HAVING DIFFERENT THRESHOLD...
- Publication number 20130295730
- Publication date Nov 7, 2013
- International Business Machines Corporation
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE WITH TRANSISTORS HAVING DIFFERENT THRESHOLD...
- Publication number 20130292766
- Publication date Nov 7, 2013
- International Business Machines Corporation
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFET NON-VOLATILE MEMORY AND METHOD OF FABRICATION
- Publication number 20130270627
- Publication date Oct 17, 2013
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Structure and method to improve etsoi mosfets with back gate
- Publication number 20130249002
- Publication date Sep 26, 2013
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Same-Chip Multicharacteristic Semiconductor Structures
- Publication number 20130249004
- Publication date Sep 26, 2013
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET WITH WORK FUNCTION ADJUSTED METAL BACKGATE
- Publication number 20130214356
- Publication date Aug 22, 2013
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT HAVING RAISED SOURCE DRAINS DEVICES WITH REDUCED...
- Publication number 20130207189
- Publication date Aug 15, 2013
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SRAM WITH HYBRID FINFET AND PLANAR TRANSISTORS
- Publication number 20130193515
- Publication date Aug 1, 2013
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT INCLUDING DRAM AND SRAM/LOGIC
- Publication number 20130175594
- Publication date Jul 11, 2013
- International Business Machines Corporation
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT HAVING RAISED SOURCE DRAINS DEVICES WITH REDUCED...
- Publication number 20130175606
- Publication date Jul 11, 2013
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT INCLUDING DRAM AND SRAM/LOGIC
- Publication number 20130175595
- Publication date Jul 11, 2013
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Circuit Including DRAM and SRAM/Logic
- Publication number 20130178043
- Publication date Jul 11, 2013
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH RECESSED CHANNEL AND RAISED SOURCE/DRAIN
- Publication number 20130175579
- Publication date Jul 11, 2013
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING TRANSISTOR WITH RECESSED CHANNEL AND RAISED...
- Publication number 20130178022
- Publication date Jul 11, 2013
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS

Pranita Kulkarni

Person

Patents Grantslast 30 patents

Device and method for fabricating thin semiconductor channel and bu...

Device and method for fabricating thin semiconductor channel and bu...

Structure and method to fabricate resistor on finFET processes

Methods of forming a semiconductor device with a protected gate cap...

MOSFET with work function adjusted metal backgate

Shallow trench isolation structures

Source and drain doping profile control employing carbon-doped semi...

Buried channel field-effect transistors

Compressively stressed FET device structures

Integrated circuit with on chip planar diode and CMOS devices

Structure and method to modulate threshold voltage for high-K metal...

Integrated circuit including DRAM and SRAM/logic

Buried-channel field-effect transistors

Methods of forming a semiconductor device with a protected gate cap...

Method to enable compressively strained pFET channel in a FinFET st...

FinFET device having reduce capacitance, access resistance, and con...

Integrated circuit having raised source drains devices with reduced...

Raised source/drain structure for enhanced strain coupling from str...

Methods of forming a semiconductor device with a protected gate cap...

Strained thin body CMOS device having vertically raised source/drai...

FinFET-compatible metal-insulator-metal capacitor

Raised source/drain structure for enhanced strain coupling from str...

Integrated circuit including DRAM and SRAM/logic

Highly scaled ETSOI floating body memory and memory circuit

Junctionless transistor

FinFET non-volatile memory and method of fabrication

Inversion mode varactor

Three dimensional FET devices having different device widths

Implant free extremely thin semiconductor devices

MOSFET with recessed channel film and abrupt junctions

Patents Applicationslast 30 patents

DEVICE AND METHOD FOR FABRICATING THIN SEMICONDUCTOR CHANNEL AND BU...

METHODS OF FORMING A SEMICONDUCTOR DEVICE WITH A PROTECTED GATE CAP...

METHODS OF FORMING A SEMICONDUCTOR DEVICE WITH A PROTECTED GATE CAP...

METHODS OF FORMING A SEMICONDUCTOR DEVICE WITH A PROTECTED GATE CAP...

Inversion Mode Varactor

Source and Drain Doping Profile Control Employing Carbon-Doped Semi...

SEMICONDUCTOR STRUCTURE HAVING NFET EXTENSION LAST IMPLANTS

METHOD FOR FABRICATING TRANSISTOR WITH RECESSED CHANNEL AND RAISED...

SHALLOW TRENCH ISOLATION STRUCTURES

SHALLOW TRENCH ISOLATION STRUCTURES

Structure and Method to Modulate Threshold Voltage For High-K Metal...

INTEGRATED CIRCUIT WITH ON CHIP PLANAR DIODE AND CMOS DEVICES

STRUCTURE AND METHOD TO MODULATE THRESHOLD VOLTAGE FOR HIGH-K METAL...

BURIED-CHANNEL FIELD-EFFECT TRANSISTORS

BURIED-CHANNEL FIELD-EFFECT TRANSISTORS

MOSFET WITH THIN SEMICONDUCTOR CHANNEL AND EMBEDDED STRESSOR WITH E...

SEMICONDUCTOR SUBSTRATE WITH TRANSISTORS HAVING DIFFERENT THRESHOLD...

SEMICONDUCTOR SUBSTRATE WITH TRANSISTORS HAVING DIFFERENT THRESHOLD...

FinFET NON-VOLATILE MEMORY AND METHOD OF FABRICATION

Structure and method to improve etsoi mosfets with back gate

Same-Chip Multicharacteristic Semiconductor Structures

MOSFET WITH WORK FUNCTION ADJUSTED METAL BACKGATE

INTEGRATED CIRCUIT HAVING RAISED SOURCE DRAINS DEVICES WITH REDUCED...

SRAM WITH HYBRID FINFET AND PLANAR TRANSISTORS

INTEGRATED CIRCUIT INCLUDING DRAM AND SRAM/LOGIC

INTEGRATED CIRCUIT HAVING RAISED SOURCE DRAINS DEVICES WITH REDUCED...

INTEGRATED CIRCUIT INCLUDING DRAM AND SRAM/LOGIC

Integrated Circuit Including DRAM and SRAM/Logic

TRANSISTOR WITH RECESSED CHANNEL AND RAISED SOURCE/DRAIN

METHOD FOR FABRICATING TRANSISTOR WITH RECESSED CHANNEL AND RAISED...