Qian Tao

Person

Boise, ID, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor devices including ferroelectric materials
- Patent number 12,167,610
- Issue date Dec 10, 2024
- Micron Technology, Inc.
- Qian Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cells
- Patent number 11,706,929
- Issue date Jul 18, 2023
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices comprising threshold switching materials
- Patent number 11,672,191
- Issue date Jun 6, 2023
- Micron Technology, Inc.
- Tsz W. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped titanium nitride materials for DRAM capacitors, and related s...
- Patent number 11,289,487
- Issue date Mar 29, 2022
- Micron Technology, Inc.
- Matthew N. Rocklein
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cells
- Patent number 11,244,951
- Issue date Feb 8, 2022
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including ferroelectric materials
- Patent number 11,043,502
- Issue date Jun 22, 2021
- Micron Technology, Inc.
- Qian Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming memory cells and memory devices
- Patent number 10,923,657
- Issue date Feb 16, 2021
- Micron Technology, Inc.
- Tsz W. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cells and methods of forming memory cells
- Patent number 10,923,658
- Issue date Feb 16, 2021
- Micron Technology, Inc.
- Shuichiro Yasuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D NAND with integral drain-end select gate (SGD)
- Patent number 10,790,290
- Issue date Sep 29, 2020
- Intel Corporation
- David A. Daycock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Computer memory
- Patent number 10,762,939
- Issue date Sep 1, 2020
- Intel Corporation
- Christopher J. Larsen
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory cells
- Patent number 10,741,567
- Issue date Aug 11, 2020
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory arrays, and methods of forming memory arrays
- Patent number 10,541,252
- Issue date Jan 21, 2020
- Micron Technology, Inc.
- David Daycock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming memory cells and semiconductor devices
- Patent number 10,418,554
- Issue date Sep 17, 2019
- Micron Technology, Inc.
- Tsz W. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including ferroelectric materials
- Patent number 10,403,630
- Issue date Sep 3, 2019
- Micron Technology, Inc.
- Qian Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional ferroelectric memory devices
- Patent number 10,403,631
- Issue date Sep 3, 2019
- Wuxi Petabyte Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cells and methods of forming memory cells
- Patent number 10,388,871
- Issue date Aug 20, 2019
- Micron Technology, Inc.
- Shuichiro Yasuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory arrays, and methods of forming memory arrays
- Patent number 10,304,853
- Issue date May 28, 2019
- Micron Technology, Inc.
- David Daycock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polar, chiral, and non-centro-symmetric ferroelectric materials, me...
- Patent number 10,242,989
- Issue date Mar 26, 2019
- Micron Technology, Inc.
- Sumeet C. Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cells
- Patent number 10,217,753
- Issue date Feb 26, 2019
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cells including dielectric materials, memory devices includi...
- Patent number 10,193,064
- Issue date Jan 29, 2019
- Micron Technology, Inc.
- Tsz W. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory arrays, and methods of forming memory arrays
- Patent number 10,083,981
- Issue date Sep 25, 2018
- Micron Technology, Inc.
- David Daycock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming a ferroelectric memory cell
- Patent number 10,062,703
- Issue date Aug 28, 2018
- Micron Technology, Inc.
- Qian Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cells
- Patent number 9,887,204
- Issue date Feb 6, 2018
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cells including dielectric materials, memory devices includi...
- Patent number 9,716,225
- Issue date Jul 25, 2017
- Micron Technology, Inc.
- Tsz W. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structures including ferroelectric memory cells
- Patent number 9,698,343
- Issue date Jul 4, 2017
- Micron Technology, Inc.
- Qian Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cells
- Patent number 9,673,203
- Issue date Jun 6, 2017
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cells and methods of forming memory cells
- Patent number 9,508,931
- Issue date Nov 29, 2016
- Micron Technology, Inc.
- Shuichiro Yasuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Liner for phase change memory (PCM) array and associated techniques...
- Patent number 9,397,143
- Issue date Jul 19, 2016
- Intel Corporation
- Noel Rocklein
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cells
- Patent number 9,305,929
- Issue date Apr 5, 2016
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming a ferroelectric memory cell
- Patent number 9,231,206
- Issue date Jan 5, 2016
- Micron Technology, Inc.
- Qian Tao
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DOPED TITANIUM NITRIDE MATERIALS FOR DRAM CAPACITORS, AND RELATED S...
- Publication number 20220208767
- Publication date Jun 30, 2022
- Micron Technology, Inc.
- Matthew N. Rocklein
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Cells
- Publication number 20220122998
- Publication date Apr 21, 2022
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES INCLUDING FERROELECTRIC MATERIALS
- Publication number 20210313339
- Publication date Oct 7, 2021
- Micron Technology, Inc.
- Qian Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES COMPRISING THRESHOLD SWITCHING MATERIALS
- Publication number 20210151676
- Publication date May 20, 2021
- Micron Technology, Inc.
- Tsz W. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Cells
- Publication number 20200350323
- Publication date Nov 5, 2020
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES INCLUDING FERROELECTRIC MATERIALS
- Publication number 20190386015
- Publication date Dec 19, 2019
- Micron Technology, Inc.
- Qian Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING MEMORY CELLS AND MEMORY DEVICES
- Publication number 20190348603
- Publication date Nov 14, 2019
- Micron Technology, Inc.
- Tsz W. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Cells and Methods of Forming Memory Cells
- Publication number 20190296235
- Publication date Sep 26, 2019
- Micron Technology, Inc.
- Shuichiro Yasuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED TITANIUM NITRIDE MATERIALS FOR DRAM CAPACITORS, AND RELATED S...
- Publication number 20190267383
- Publication date Aug 29, 2019
- Micron Technology, Inc.
- Matthew N. Rocklein
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Arrays, and Methods of Forming Memory Arrays
- Publication number 20190267396
- Publication date Aug 29, 2019
- Micron Technology, Inc.
- David Daycock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Cells
- Publication number 20190189626
- Publication date Jun 20, 2019
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC MEMORY CELLS INCLUDING FERROELECTRIC CRYSTALLINE MATE...
- Publication number 20190189627
- Publication date Jun 20, 2019
- Micron Technology, Inc.
- Sumeet C. Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D NAND WITH INTEGRAL DRAIN-END SELECT GATE (SGD)
- Publication number 20190103410
- Publication date Apr 4, 2019
- Intel Corporation
- DAVID A. DAYCOCK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING MEMORY CELLS AND SEMICONDUCTOR DEVICES
- Publication number 20190067573
- Publication date Feb 28, 2019
- Micron Technology, Inc.
- Tsz W. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPUTER MEMORY
- Publication number 20190005996
- Publication date Jan 3, 2019
- Intel Corporation
- Christopher J. Larsen
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICES INCLUDING FERROELECTRIC MATERIALS
- Publication number 20180350824
- Publication date Dec 6, 2018
- Micron Technology, Inc.
- Qian Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Arrays, and Methods of Forming Memory Arrays
- Publication number 20180323212
- Publication date Nov 8, 2018
- Micron Technology, Inc.
- David Daycock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Arrays, and Methods of Forming Memory Arrays
- Publication number 20180219021
- Publication date Aug 2, 2018
- Micron Technology, Inc.
- David Daycock
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Cells
- Publication number 20180145084
- Publication date May 24, 2018
- Micro Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELLS INCLUDING DIELECTRIC MATERIALS, MEMORY DEVICES INCLUDI...
- Publication number 20170309818
- Publication date Oct 26, 2017
- Micron Technology, Inc.
- Tsz W. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Cells
- Publication number 20170236828
- Publication date Aug 17, 2017
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING A FERROELECTRIC MEMORY CELL
- Publication number 20170186757
- Publication date Jun 29, 2017
- Micron Technology, Inc.
- Qian Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Cells and Methods of Forming Memory Cells
- Publication number 20170040534
- Publication date Feb 9, 2017
- Micron Technology, Inc.
- Shuichiro Yasuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Cells
- Publication number 20160240545
- Publication date Aug 18, 2016
- Micron Technology, Inc.
- Kamal M. Karda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELLS INCLUDING DIELECTRIC MATERIALS, MEMORY DEVICES INCLUDI...
- Publication number 20160064666
- Publication date Mar 3, 2016
- Micron Technology, Inc.
- Tsz W. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURES INCLUDING FERROELECTRIC MEMORY CELLS
- Publication number 20160064655
- Publication date Mar 3, 2016
- Micron Technology, Inc.
- Qian Tao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POLAR, CHIRAL, AND NON-CENTRO-SYMMETRIC FERROELECTRIC MATERIALS, ME...
- Publication number 20150340372
- Publication date Nov 26, 2015
- Micron Technology, Inc.
- Sumeet C. Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods Of Forming Ferroelectric Capacitors
- Publication number 20150303206
- Publication date Oct 22, 2015
- Micron Technology, Inc.
- Ashonita A. Chavan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LINER FOR PHASE CHANGE MEMORY (PCM) ARRAY AND ASSOCIATED TECHNIQUES...
- Publication number 20150179706
- Publication date Jun 25, 2015
- Noel Rocklein
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Cells and Methods of Forming Memory Cells
- Publication number 20150140776
- Publication date May 21, 2015
- Micron Technology, Inc.
- Shuichiro Yasuda
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Semiconductor devices including ferroelectric materials

Memory cells

Semiconductor devices comprising threshold switching materials

Doped titanium nitride materials for DRAM capacitors, and related s...

Memory cells

Semiconductor devices including ferroelectric materials

Methods of forming memory cells and memory devices

Memory cells and methods of forming memory cells

3D NAND with integral drain-end select gate (SGD)

Computer memory

Memory cells

Memory arrays, and methods of forming memory arrays

Methods of forming memory cells and semiconductor devices

Semiconductor devices including ferroelectric materials

Three-dimensional ferroelectric memory devices

Memory cells and methods of forming memory cells

Memory arrays, and methods of forming memory arrays

Polar, chiral, and non-centro-symmetric ferroelectric materials, me...

Memory cells

Memory cells including dielectric materials, memory devices includi...

Memory arrays, and methods of forming memory arrays

Methods of forming a ferroelectric memory cell

Memory cells

Memory cells including dielectric materials, memory devices includi...

Semiconductor device structures including ferroelectric memory cells

Memory cells

Memory cells and methods of forming memory cells

Liner for phase change memory (PCM) array and associated techniques...

Memory cells

Methods of forming a ferroelectric memory cell

Patents Applicationslast 30 patents

DOPED TITANIUM NITRIDE MATERIALS FOR DRAM CAPACITORS, AND RELATED S...

Memory Cells

SEMICONDUCTOR DEVICES INCLUDING FERROELECTRIC MATERIALS

SEMICONDUCTOR DEVICES COMPRISING THRESHOLD SWITCHING MATERIALS

Memory Cells

SEMICONDUCTOR DEVICES INCLUDING FERROELECTRIC MATERIALS

METHODS OF FORMING MEMORY CELLS AND MEMORY DEVICES

Memory Cells and Methods of Forming Memory Cells

DOPED TITANIUM NITRIDE MATERIALS FOR DRAM CAPACITORS, AND RELATED S...

Memory Arrays, and Methods of Forming Memory Arrays

Memory Cells

FERROELECTRIC MEMORY CELLS INCLUDING FERROELECTRIC CRYSTALLINE MATE...

3D NAND WITH INTEGRAL DRAIN-END SELECT GATE (SGD)

METHODS OF FORMING MEMORY CELLS AND SEMICONDUCTOR DEVICES

COMPUTER MEMORY

SEMICONDUCTOR DEVICES INCLUDING FERROELECTRIC MATERIALS

Memory Arrays, and Methods of Forming Memory Arrays

Memory Arrays, and Methods of Forming Memory Arrays

Memory Cells

MEMORY CELLS INCLUDING DIELECTRIC MATERIALS, MEMORY DEVICES INCLUDI...

Memory Cells

METHODS OF FORMING A FERROELECTRIC MEMORY CELL

Memory Cells and Methods of Forming Memory Cells

Memory Cells

MEMORY CELLS INCLUDING DIELECTRIC MATERIALS, MEMORY DEVICES INCLUDI...

SEMICONDUCTOR DEVICE STRUCTURES INCLUDING FERROELECTRIC MEMORY CELLS

POLAR, CHIRAL, AND NON-CENTRO-SYMMETRIC FERROELECTRIC MATERIALS, ME...

Methods Of Forming Ferroelectric Capacitors

LINER FOR PHASE CHANGE MEMORY (PCM) ARRAY AND ASSOCIATED TECHNIQUES...

Memory Cells and Methods of Forming Memory Cells