Qingchun Zhang

Person

Ventura, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Superjunction power semiconductor devices formed via ion implantati...
- Patent number 11,791,378
- Issue date Oct 17, 2023
- Wolfspeed, Inc.
- Edward Robert Van Brunt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Passivation structure for semiconductor devices
- Patent number RE49167
- Issue date Aug 9, 2022
- Wolfspeed, Inc.
- Van Mieczkowski
Information Patent Grant
Power switching devices with high dV/dt capability and methods of m...
- Patent number 11,184,001
- Issue date Nov 23, 2021
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power silicon carbide based MOSFET transistors with improved short...
- Patent number 11,164,967
- Issue date Nov 2, 2021
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super junction power semiconductor devices formed via ion implantat...
- Patent number 11,075,264
- Issue date Jul 27, 2021
- Cree, Inc.
- Edward Robert Van Brunt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power module for supporting high current densities
- Patent number 11,024,731
- Issue date Jun 1, 2021
- Cree, Inc.
- Jason Patrick Henning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structures having a deep recessed P+ junction and method...
- Patent number 10,886,396
- Issue date Jan 5, 2021
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structures having a deep recessed P+ junction and method...
- Patent number 10,847,645
- Issue date Nov 24, 2020
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structures having reduced electrical field at the gate o...
- Patent number 10,840,367
- Issue date Nov 17, 2020
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power switching devices with DV/DT capability and methods of making...
- Patent number 10,601,413
- Issue date Mar 24, 2020
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power Schottky diodes having closely-spaced deep blocking junctions...
- Patent number 10,510,905
- Issue date Dec 17, 2019
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power silicon carbide based MOSFET transistors with improved short...
- Patent number 10,424,660
- Issue date Sep 24, 2019
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power module having a switch module for supporting high current den...
- Patent number 10,153,364
- Issue date Dec 11, 2018
- Cree, Inc.
- Jason Patrick Henning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structures having a deep recessed P+ junction and method...
- Patent number 10,115,815
- Issue date Oct 30, 2018
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Passivation structure for semiconductor devices
- Patent number 9,991,399
- Issue date Jun 5, 2018
- Cree, Inc.
- Van Mieczkowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optically assist-triggered wide bandgap thyristors having positive...
- Patent number 9,941,439
- Issue date Apr 10, 2018
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power schottky diodes having local current spreading layers and met...
- Patent number 9,929,284
- Issue date Mar 27, 2018
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky diode
- Patent number 9,865,750
- Issue date Jan 9, 2018
- Cree, Inc.
- Jason Patrick Henning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky structure employing central implants between junction barr...
- Patent number 9,831,355
- Issue date Nov 28, 2017
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power module for supporting high current densities
- Patent number 9,673,283
- Issue date Jun 6, 2017
- Cree, Inc.
- Jason Patrick Henning
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Semiconductor devices including epitaxial layers and related methods
- Patent number 9,640,652
- Issue date May 2, 2017
- Cree, Inc.
- Brett Adam Hull
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double guard ring edge termination for silicon carbide devices
- Patent number 9,640,609
- Issue date May 2, 2017
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistor with improved avalanche capability
- Patent number 9,601,605
- Issue date Mar 21, 2017
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with heterojunction barrier regions and metho...
- Patent number 9,595,618
- Issue date Mar 14, 2017
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diffused junction termination structures for silicon carbide devices
- Patent number 9,570,560
- Issue date Feb 14, 2017
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide switching devices including P-type channels
- Patent number 9,552,997
- Issue date Jan 24, 2017
- Cree, Inc.
- Mrinal Kanti Das
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High power insulated gate bipolar transistors
- Patent number 9,548,374
- Issue date Jan 17, 2017
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structures having reduced electrical field at the gate o...
- Patent number 9,530,844
- Issue date Dec 27, 2016
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-gain wide bandgap darlington transistors and related methods o...
- Patent number 9,478,537
- Issue date Oct 25, 2016
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with non-implanted barrier regions and method...
- Patent number 9,466,674
- Issue date Oct 11, 2016
- Cree, Inc.
- Scott Thomas Allen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SUPERJUNCTION POWER SEMICONDUCTOR DEVICES FORMED VIA ION IMPLANTATI...
- Publication number 20210367029
- Publication date Nov 25, 2021
- Cree, Inc.
- Edward Robert Van Brunt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SWITCHING DEVICES WITH HIGH DV/DT CAPABILITY AND METHODS OF M...
- Publication number 20200212908
- Publication date Jul 2, 2020
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SILICON CARBIDE BASED MOSFET TRANSISTORS WITH IMPROVED SHORT...
- Publication number 20190371931
- Publication date Dec 5, 2019
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SILICON CARBIDE BASED MOSFET TRANSISTORS WITH IMPROVED SHORT...
- Publication number 20190198656
- Publication date Jun 27, 2019
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SWITCHING DEVICES WITH DV/DT CAPABILITY AND METHODS OF MAKING...
- Publication number 20190081624
- Publication date Mar 14, 2019
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER MODULE FOR SUPPORTING HIGH CURRENT DENSITIES
- Publication number 20190067468
- Publication date Feb 28, 2019
- Cree, Inc.
- Jason Patrick Henning
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
TRANSISTOR STRUCTURES HAVING A DEEP RECESSED P+ JUNCTION AND METHOD...
- Publication number 20190043980
- Publication date Feb 7, 2019
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SCHOTTKY DIODES HAVING CLOSELY-SPACED DEEP BLOCKING JUNCTIONS...
- Publication number 20190013416
- Publication date Jan 10, 2019
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER JUNCTION POWER SEMICONDUCTOR DEVICES FORMED VIA ION IMPLANTAT...
- Publication number 20170345891
- Publication date Nov 30, 2017
- Cree, Inc.
- Edward Robert Van Brunt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER MODULE FOR SUPPORTING HIGH CURRENT DENSITIES
- Publication number 20170263713
- Publication date Sep 14, 2017
- Cree, Inc.
- Jason Patrick Henning
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
TRANSISTOR STRUCTURES HAVING REDUCED ELECTRICAL FIELD AT THE GATE O...
- Publication number 20170053987
- Publication date Feb 23, 2017
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY STRUCTURE EMPLOYING CENTRAL IMPLANTS BETWEEN JUNCTION BARR...
- Publication number 20160211387
- Publication date Jul 21, 2016
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Optically Assist-Triggered Wide Bandgap Thyristors Having Positive...
- Publication number 20160133777
- Publication date May 12, 2016
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PASSIVATION FOR SEMICONDUCTOR DEVICES
- Publication number 20160093748
- Publication date Mar 31, 2016
- Cree, Inc.
- Van Mieczkowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT WITH BIDIRECTIONAL CONDUCTION
- Publication number 20150364584
- Publication date Dec 17, 2015
- Cree, Inc.
- Sei-Hyung Ryu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY DIODE
- Publication number 20150333191
- Publication date Nov 19, 2015
- Cree, Inc.
- Jason Patrick Henning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT STRUCTURE ON SIC FOR HIGH PERFORMANCE
- Publication number 20150311325
- Publication date Oct 29, 2015
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Power Insulated Gate Bipolar Transistors
- Publication number 20150287805
- Publication date Oct 8, 2015
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE STRUCTURE WITH A SEMICONDUCTOR LEDGE LAYER FOR SU...
- Publication number 20150111347
- Publication date Apr 23, 2015
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH A CURRENT SPREADING LAYER
- Publication number 20150084063
- Publication date Mar 26, 2015
- Cree, Inc.
- Edward Robert Van Brunt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH HETEROJUNCTION BARRIER REGIONS AND METHO...
- Publication number 20150076522
- Publication date Mar 19, 2015
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE BIPOLAR TRANSISTORS INCLUDING CURRENT SUPPRESSING LA...
- Publication number 20140363931
- Publication date Dec 11, 2014
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JUNCTION TERMINATION STRUCTURES INCLUDING GUARD RING EXTENSIONS AND...
- Publication number 20140319646
- Publication date Oct 30, 2014
- Jason Henning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURES HAVING A DEEP RECESSED P+ JUNCTION AND METHOD...
- Publication number 20140183552
- Publication date Jul 3, 2014
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURES HAVING REDUCED ELECTRICAL FIELD AT THE GATE O...
- Publication number 20140183553
- Publication date Jul 3, 2014
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY STRUCTURE EMPLOYING CENTRAL IMPLANTS BETWEEN JUNCTION BARR...
- Publication number 20140145289
- Publication date May 29, 2014
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY DIODE
- Publication number 20140145213
- Publication date May 29, 2014
- Cree, Inc.
- Jason Patrick Henning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER SURGE DIODES
- Publication number 20140138705
- Publication date May 22, 2014
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Diffused Junction Termination Structures for Silicon Carbide Devices
- Publication number 20140097450
- Publication date Apr 10, 2014
- The University of South Carolina
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JUNCTION BARRIER SCHOTTKY DIODES WITH CURRENT SURGE CAPABILITY
- Publication number 20140077228
- Publication date Mar 20, 2014
- Cree, Inc.
- Qingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS

Qingchun Zhang

Person

Patents Grantslast 30 patents

Superjunction power semiconductor devices formed via ion implantati...

Passivation structure for semiconductor devices

Power switching devices with high dV/dt capability and methods of m...

Power silicon carbide based MOSFET transistors with improved short...

Super junction power semiconductor devices formed via ion implantat...

Power module for supporting high current densities

Transistor structures having a deep recessed P+ junction and method...

Transistor structures having a deep recessed P+ junction and method...

Transistor structures having reduced electrical field at the gate o...

Power switching devices with DV/DT capability and methods of making...

Power Schottky diodes having closely-spaced deep blocking junctions...

Power silicon carbide based MOSFET transistors with improved short...

Power module having a switch module for supporting high current den...

Transistor structures having a deep recessed P+ junction and method...

Passivation structure for semiconductor devices

Optically assist-triggered wide bandgap thyristors having positive...

Power schottky diodes having local current spreading layers and met...

Schottky diode

Schottky structure employing central implants between junction barr...

Power module for supporting high current densities

Semiconductor devices including epitaxial layers and related methods

Double guard ring edge termination for silicon carbide devices

Bipolar junction transistor with improved avalanche capability

Semiconductor devices with heterojunction barrier regions and metho...

Diffused junction termination structures for silicon carbide devices

Silicon carbide switching devices including P-type channels

High power insulated gate bipolar transistors

Transistor structures having reduced electrical field at the gate o...

High-gain wide bandgap darlington transistors and related methods o...

Semiconductor devices with non-implanted barrier regions and method...

Patents Applicationslast 30 patents

SUPERJUNCTION POWER SEMICONDUCTOR DEVICES FORMED VIA ION IMPLANTATI...

POWER SWITCHING DEVICES WITH HIGH DV/DT CAPABILITY AND METHODS OF M...

POWER SILICON CARBIDE BASED MOSFET TRANSISTORS WITH IMPROVED SHORT...

POWER SILICON CARBIDE BASED MOSFET TRANSISTORS WITH IMPROVED SHORT...

POWER SWITCHING DEVICES WITH DV/DT CAPABILITY AND METHODS OF MAKING...

POWER MODULE FOR SUPPORTING HIGH CURRENT DENSITIES

TRANSISTOR STRUCTURES HAVING A DEEP RECESSED P+ JUNCTION AND METHOD...

POWER SCHOTTKY DIODES HAVING CLOSELY-SPACED DEEP BLOCKING JUNCTIONS...

SUPER JUNCTION POWER SEMICONDUCTOR DEVICES FORMED VIA ION IMPLANTAT...

POWER MODULE FOR SUPPORTING HIGH CURRENT DENSITIES

TRANSISTOR STRUCTURES HAVING REDUCED ELECTRICAL FIELD AT THE GATE O...

SCHOTTKY STRUCTURE EMPLOYING CENTRAL IMPLANTS BETWEEN JUNCTION BARR...

Optically Assist-Triggered Wide Bandgap Thyristors Having Positive...

PASSIVATION FOR SEMICONDUCTOR DEVICES

IGBT WITH BIDIRECTIONAL CONDUCTION

SCHOTTKY DIODE

IGBT STRUCTURE ON SIC FOR HIGH PERFORMANCE

High Power Insulated Gate Bipolar Transistors

ELECTRONIC DEVICE STRUCTURE WITH A SEMICONDUCTOR LEDGE LAYER FOR SU...

SEMICONDUCTOR DEVICE WITH A CURRENT SPREADING LAYER

SEMICONDUCTOR DEVICES WITH HETEROJUNCTION BARRIER REGIONS AND METHO...

INSULATED GATE BIPOLAR TRANSISTORS INCLUDING CURRENT SUPPRESSING LA...

JUNCTION TERMINATION STRUCTURES INCLUDING GUARD RING EXTENSIONS AND...

TRANSISTOR STRUCTURES HAVING A DEEP RECESSED P+ JUNCTION AND METHOD...

TRANSISTOR STRUCTURES HAVING REDUCED ELECTRICAL FIELD AT THE GATE O...

SCHOTTKY STRUCTURE EMPLOYING CENTRAL IMPLANTS BETWEEN JUNCTION BARR...

SCHOTTKY DIODE

SUPER SURGE DIODES

Diffused Junction Termination Structures for Silicon Carbide Devices

JUNCTION BARRIER SCHOTTKY DIODES WITH CURRENT SURGE CAPABILITY