Radhika Srinivasan

Person

Wappinger Falls, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Vertical thermal nitride mask (anti-collar) and processing thereof
- Patent number 6,797,582
- Issue date Sep 28, 2004
- International Business Machines Corporation
- Oleg Gluschenkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and device for array threshold voltage control by trapped ch...
- Patent number 6,348,394
- Issue date Feb 19, 2002
- International Business Machines Corporation
- Jack A. Mandelman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dopant control of semiconductor devices
- Patent number 6,333,531
- Issue date Dec 25, 2001
- International Business Machines Corporation
- Yun-Yu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of trench capacitors using disposable hard mask
- Patent number 6,190,955
- Issue date Feb 20, 2001
- International Business Machines Corporation
- Matthias Ilg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of controllably forming a LOCOS oxide layer over a portion o...
- Patent number 6,153,474
- Issue date Nov 28, 2000
- International Business Machines Corporation
- Herbert Lei Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation (STI) with bilayer of oxide-nitride for VL...
- Patent number 6,140,208
- Issue date Oct 31, 2000
- International Business Machines Corporation
- Farid Agahi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insitu doped metal policide
- Patent number 6,130,145
- Issue date Oct 10, 2000
- Siemens Aktiengesellschaft
- Matthias Ilg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming electrical isolation for semiconductor devices
- Patent number 6,074,903
- Issue date Jun 13, 2000
- Siemens Aktiengesellschaft
- Rajesh Rengarajan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reliable low resistance strap for trench storage DRAM cell using se...
- Patent number 5,923,971
- Issue date Jul 13, 1999
- International Business Machines Corporation
- Herbert L. Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional device layout with sub-groundrule features
- Patent number 5,893,735
- Issue date Apr 13, 1999
- Siemens Aktiengesellschaft
- Reinhard J. Stengl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried strap formation in a DRAM trench capacitor
- Patent number 5,844,266
- Issue date Dec 1, 1998
- Siemens Aktiengesellschaft
- Reinhard Stengl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried-strap formation in a dram trench capacitor
- Patent number 5,827,765
- Issue date Oct 27, 1998
- Siemens Aktiengesellschaft
- Reinhard Stengl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional device layout having a trench capacitor
- Patent number 5,792,685
- Issue date Aug 11, 1998
- Siemens Aktiengesellschaft
- Erwin Hammerl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Storage node process for deep trench-based DRAM
- Patent number 5,656,535
- Issue date Aug 12, 1997
- Siemens Aktiengesellschaft
- Herbert Ho
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Vertical thermal nitride mask (anti-collar) and processing thereof
- Publication number 20030203587
- Publication date Oct 30, 2003
- Oleg Gluschenkov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A 3-D MICROELECTRONIC STRUCTURE INCLUDING A VERTICAL THERMAL NITRID...
- Publication number 20030107111
- Publication date Jun 12, 2003
- International Business Machines Corporation
- Oleg Gluschenkov
- H01 - BASIC ELECTRIC ELEMENTS

Radhika Srinivasan

Person

Patents Grantslast 30 patents

Vertical thermal nitride mask (anti-collar) and processing thereof

Method and device for array threshold voltage control by trapped ch...

Dopant control of semiconductor devices

Fabrication of trench capacitors using disposable hard mask

Method of controllably forming a LOCOS oxide layer over a portion o...

Shallow trench isolation (STI) with bilayer of oxide-nitride for VL...

Insitu doped metal policide

Method for forming electrical isolation for semiconductor devices

Reliable low resistance strap for trench storage DRAM cell using se...

Three-dimensional device layout with sub-groundrule features

Buried strap formation in a DRAM trench capacitor

Buried-strap formation in a dram trench capacitor

Three-dimensional device layout having a trench capacitor

Storage node process for deep trench-based DRAM

Patents Applicationslast 30 patents

Vertical thermal nitride mask (anti-collar) and processing thereof

A 3-D MICROELECTRONIC STRUCTURE INCLUDING A VERTICAL THERMAL NITRID...