Rajiv Ranade

Person

Fishkill, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Use of an organic planarizing mask for cutting a plurality of gate...
- Patent number 8,455,366
- Issue date Jun 4, 2013
- International Business Machines Corporation
- Nicholas C. M. Fuller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Use of an organic planarizing mask for cutting a plurality of gate...
- Patent number 8,367,556
- Issue date Feb 5, 2013
- International Business Machines Corporation
- Nicholas C. M. Fuller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for line-dimension control of an etch process
- Patent number 7,700,378
- Issue date Apr 20, 2010
- International Business Machines Corporation
- Gary Walter Behm
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for line-dimension control of an etch process
- Patent number 7,291,285
- Issue date Nov 6, 2007
- International Business Machines Corporation
- Gary Walter Behm
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to achieve increased trench depth, independent of CD as defi...
- Patent number 7,144,769
- Issue date Dec 5, 2006
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for patterning a semiconductor region
- Patent number 7,091,081
- Issue date Aug 15, 2006
- International Business Machines Corporation
- Sadanand V. Deshpande
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication process for a magnetic tunnel junction device
- Patent number 6,984,529
- Issue date Jan 10, 2006
- Infineon Technologies AG
- George Stojakovic
- G11 - INFORMATION STORAGE
Information Patent Grant
MRAM MTJ stack to conductive line alignment method
- Patent number 6,858,441
- Issue date Feb 22, 2005
- Infineon Technologies AG
- Joachim Nuetzel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for dry etching deep trenches in a substrate
- Patent number 6,821,900
- Issue date Nov 23, 2004
- Infineon Technologies AG
- Satish Athavale
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to achieve increased trench depth, independent of CD as defi...
- Patent number 6,821,864
- Issue date Nov 23, 2004
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to fill deep trench structures with void-free polysilicon or...
- Patent number 6,809,005
- Issue date Oct 26, 2004
- Infineon Technologies AG
- Rajiv Ranade
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Circuit with buried strap including liner
- Patent number 6,768,155
- Issue date Jul 27, 2004
- Infineon Technologies AG
- Venkatachalam C. JaiPrakash
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of etching high aspect ratio openings
- Patent number 6,743,727
- Issue date Jun 1, 2004
- International Business Machines Corporation
- Gangadhara S. Mathad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to increase the etch rate and depth in high aspect ratio str...
- Patent number 6,709,917
- Issue date Mar 23, 2004
- International Business Machines Corporation
- Siddhartha Panda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing circuit with buried strap including a liner
- Patent number 6,605,504
- Issue date Aug 12, 2003
- Infineon Technologies AG
- Venkatachalam C. JaiPrakash
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of deep trench formation with improved profile control and s...
- Patent number 6,544,838
- Issue date Apr 8, 2003
- Infineon Technologies AG
- Rajiv Ranade
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Elimination/reduction of black silicon in DT etch
- Patent number 6,489,249
- Issue date Dec 3, 2002
- Infineon Technologies AG
- Gangadhara S. Mathad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of reducing RIE lag for deep trench silicon etching
- Patent number 6,284,666
- Issue date Sep 4, 2001
- International Business Machines Corporation
- Munir D. Naeem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming deep trench capacitors
- Patent number 6,103,585
- Issue date Aug 15, 2000
- Siemens Aktiengesellschaft
- Alexander Michaelis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of a bottle shaped trench
- Patent number 5,891,807
- Issue date Apr 6, 1999
- Siemens Aktiengesellschaft
- K. Paul Muller
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
USE OF AN ORGANIC PLANARIZING MASK FOR CUTTING A PLURALITY OF GATE...
- Publication number 20130143397
- Publication date Jun 6, 2013
- International Business Machines Corporation
- Nicholas C.M. Fuller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTROL OF DRY CLEAN PROCESS IN WAFER PROCESSING
- Publication number 20080190446
- Publication date Aug 14, 2008
- Rajiv M. Ranade
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR LINE-DIMENSION CONTROL OF AN ETCH PROCESS
- Publication number 20080032428
- Publication date Feb 7, 2008
- Gary Walter Behm
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process and system for etching doped silicon
- Publication number 20070056927
- Publication date Mar 15, 2007
- Len Y. Tsou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and system for line-dimension control of an etch process
- Publication number 20060255010
- Publication date Nov 16, 2006
- International Business Machines Corporation
- Gary Walter Behm
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PATTERNING A SEMICONDUCTOR REGION
- Publication number 20050260859
- Publication date Nov 24, 2005
- International Business Machines Corporation
- Sadanand V. Deshpande
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fabrication process for a magnetic tunnel junction device
- Publication number 20050051820
- Publication date Mar 10, 2005
- George Stojakovic
- G11 - INFORMATION STORAGE
Information Patent Application
Novel method to achieve increased trench depth, independent of CD a...
- Publication number 20050009295
- Publication date Jan 13, 2005
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO FILL DEEP TRENCH STRUCTURES WITH VOID-FREE POLYSILICON OR...
- Publication number 20040180510
- Publication date Sep 16, 2004
- Infineon Technologies North America Corp.
- Rajiv Ranade
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MRAM MTJ stack to conductive line alignment method
- Publication number 20040043579
- Publication date Mar 4, 2004
- Joachim Nuetzel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Circuit with buried strap including liner
- Publication number 20040000683
- Publication date Jan 1, 2004
- Infineon Technologies North America Corp.
- Venkatachalam C. JaiPrakash
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO INCREASE THE ETCH RATE AND DEPTH IN HIGH ASPECT RATIO STR...
- Publication number 20030211686
- Publication date Nov 13, 2003
- International Business Machines Corporation
- Siddhartha Panda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Novel method to achieve increased trench depth, independent of CD a...
- Publication number 20030170951
- Publication date Sep 11, 2003
- International Business Machines Corporation
- Kevin K. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of etching high aspect ratio openings
- Publication number 20020179570
- Publication date Dec 5, 2002
- International Business Machines Corporation
- Gangadhara S. Mathad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of deep trench formation with improved profile control and s...
- Publication number 20020132422
- Publication date Sep 19, 2002
- Infineon Technologies North America Corp.
- Rajiv Ranade
- H01 - BASIC ELECTRIC ELEMENTS

Rajiv Ranade

Person

Patents Grantslast 30 patents

Use of an organic planarizing mask for cutting a plurality of gate...

Use of an organic planarizing mask for cutting a plurality of gate...

Method and system for line-dimension control of an etch process

Method and system for line-dimension control of an etch process

Method to achieve increased trench depth, independent of CD as defi...

Method for patterning a semiconductor region

Fabrication process for a magnetic tunnel junction device

MRAM MTJ stack to conductive line alignment method

Method for dry etching deep trenches in a substrate

Method to achieve increased trench depth, independent of CD as defi...

Method to fill deep trench structures with void-free polysilicon or...

Circuit with buried strap including liner

Method of etching high aspect ratio openings

Method to increase the etch rate and depth in high aspect ratio str...

Method of manufacturing circuit with buried strap including a liner

Method of deep trench formation with improved profile control and s...

Elimination/reduction of black silicon in DT etch

Method of reducing RIE lag for deep trench silicon etching

Method of forming deep trench capacitors

Formation of a bottle shaped trench

Patents Applicationslast 30 patents

USE OF AN ORGANIC PLANARIZING MASK FOR CUTTING A PLURALITY OF GATE...

CONTROL OF DRY CLEAN PROCESS IN WAFER PROCESSING

METHOD AND SYSTEM FOR LINE-DIMENSION CONTROL OF AN ETCH PROCESS

Process and system for etching doped silicon

Method and system for line-dimension control of an etch process

METHOD FOR PATTERNING A SEMICONDUCTOR REGION

Fabrication process for a magnetic tunnel junction device

Novel method to achieve increased trench depth, independent of CD a...

METHOD TO FILL DEEP TRENCH STRUCTURES WITH VOID-FREE POLYSILICON OR...

MRAM MTJ stack to conductive line alignment method

Circuit with buried strap including liner

METHOD TO INCREASE THE ETCH RATE AND DEPTH IN HIGH ASPECT RATIO STR...

Novel method to achieve increased trench depth, independent of CD a...

Method of etching high aspect ratio openings

Method of deep trench formation with improved profile control and s...