Rashid Bashir

Person

Mountain View, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Elimination of walkout in high voltage trench isolated devices
- Patent number 6,362,064
- Issue date Mar 26, 2002
- National Semiconductor Corporation
- Joel M. McGregor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for controlling an N-type dopant concentration depth profile...
- Patent number 6,346,452
- Issue date Feb 12, 2002
- National Semiconductor Corporation
- Abul Ehsanul Kabir
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device trench isolation structure with polysilicon bi...
- Patent number 6,121,148
- Issue date Sep 19, 2000
- National Semiconductor Corporation
- Rashid Bashir
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin liquid crystal transducer pixel cell having self-aligned suppo...
- Patent number 6,051,446
- Issue date Apr 18, 2000
- National Semiconductor Corporation
- Paul M. Moore
- G02 - OPTICS
Information Patent Grant
High sensitivity micro-machined pressure sensors and acoustic trans...
- Patent number 6,012,335
- Issue date Jan 11, 2000
- National Semiconductor Corporation
- Rashid Bashir
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Semiconductor integrated circuit having a lateral bipolar transisto...
- Patent number 5,952,706
- Issue date Sep 14, 1999
- National Semiconductor Corporation
- Rashid Bashir
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary Si/SiGe heterojunction bipolar technology
- Patent number 5,930,635
- Issue date Jul 27, 1999
- National Semiconductor Corporation
- Rashid Bashir
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device trench isolation structure with polysilicon bi...
- Patent number 5,914,523
- Issue date Jun 22, 1999
- National Semiconductor Corp.
- Rashid Bashir
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making high sensitivity micro-machined pressure sensors a...
- Patent number 5,888,845
- Issue date Mar 30, 1999
- National Semiconductor Corporation
- Rashid Bashir
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Tungsten silicide/ tungsten polycide anisotropic dry etch process
- Patent number 5,856,239
- Issue date Jan 5, 1999
- National Semiconductor Corporaton
- Rashid Bashir
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming buried interconnect structue having stability at...
- Patent number 5,827,762
- Issue date Oct 27, 1998
- National Semiconductor Corporation
- Rashid Bashir
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming and planarizing deep isolation trenches in a sili...
- Patent number 5,811,315
- Issue date Sep 22, 1998
- National Semiconductor Corporation
- Wipawan Yindeepol
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing high quality silicon surface for selective epit...
- Patent number 5,780,343
- Issue date Jul 14, 1998
- National Semiconductor Corporation
- Rashid Bashir
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a self-aligned bipolar junction transistor with...
- Patent number 5,773,350
- Issue date Jun 30, 1998
- National Semiconductor Corporation
- Francois Herbert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making surface micro-machined accelerometer using silicon...
- Patent number 5,747,353
- Issue date May 5, 1998
- National Semiconductor Corporation
- Rashid Bashir
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Planarized trench and field oxide isolation scheme
- Patent number 5,691,232
- Issue date Nov 25, 1997
- National Semiconductor Corporation
- Rashid Bashir
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a planarized trench and field oxide isolation...
- Patent number 5,683,932
- Issue date Nov 4, 1997
- National Semiconductor Corporation
- Rashid Bashir
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planar selective field oxide isolation process using SEG/ELO
- Patent number 5,681,776
- Issue date Oct 28, 1997
- National Semiconductor Corporation
- Francois Hebert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned polysilicon base contact in a bipolar junction transistor
- Patent number 5,581,114
- Issue date Dec 3, 1996
- National Semiconductor Corporation
- Rashid Bashir
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for making self-aligned polysilicon base contact in a bipol...
- Patent number 5,451,532
- Issue date Sep 19, 1995
- National Semiconductor Corp.
- Rashid Bashir
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making truly complementary and self-aligned bipolar and C...
- Patent number 5,439,833
- Issue date Aug 8, 1995
- National Semiconductor Corp.
- Francois Hebert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Simple planarized trench isolation and field oxide formation using...
- Patent number 5,411,913
- Issue date May 2, 1995
- National Semiconductor Corporation
- Rashid Bashir
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for making self-aligned source/drain polysilicon or polysil...
- Patent number 5,397,722
- Issue date Mar 14, 1995
- National Semiconductor Corporation
- Rashid Bashir
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planarized trench and field oxide and poly isolation scheme
- Patent number 5,385,861
- Issue date Jan 31, 1995
- National Semiconductor Corporation
- Rashid Bashir
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ELIMINATION OF WALKOUT IN HIGH VOLTAGE TRENCH ISOLATED DEVICES
- Publication number 20010023974
- Publication date Sep 27, 2001
- JOEL M. MCGREGOR
- H01 - BASIC ELECTRIC ELEMENTS

Rashid Bashir

Person

Patents Grantslast 30 patents

Elimination of walkout in high voltage trench isolated devices

Method for controlling an N-type dopant concentration depth profile...

Semiconductor device trench isolation structure with polysilicon bi...

Thin liquid crystal transducer pixel cell having self-aligned suppo...

High sensitivity micro-machined pressure sensors and acoustic trans...

Semiconductor integrated circuit having a lateral bipolar transisto...

Complementary Si/SiGe heterojunction bipolar technology

Semiconductor device trench isolation structure with polysilicon bi...

Method of making high sensitivity micro-machined pressure sensors a...

Tungsten silicide/ tungsten polycide anisotropic dry etch process

Method for forming buried interconnect structue having stability at...

Method of forming and planarizing deep isolation trenches in a sili...

Method of producing high quality silicon surface for selective epit...

Method for forming a self-aligned bipolar junction transistor with...

Method of making surface micro-machined accelerometer using silicon...

Planarized trench and field oxide isolation scheme

Method of fabricating a planarized trench and field oxide isolation...

Planar selective field oxide isolation process using SEG/ELO

Self-aligned polysilicon base contact in a bipolar junction transistor

Process for making self-aligned polysilicon base contact in a bipol...

Method of making truly complementary and self-aligned bipolar and C...

Simple planarized trench isolation and field oxide formation using...

Process for making self-aligned source/drain polysilicon or polysil...

Planarized trench and field oxide and poly isolation scheme

Patents Applicationslast 30 patents

ELIMINATION OF WALKOUT IN HIGH VOLTAGE TRENCH ISOLATED DEVICES