Reda R. RAZOUK

Person

Sunnyvale, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Integrated circuit micro-module
- Patent number 8,822,266
- Issue date Sep 2, 2014
- National Semiconductor Corporation
- Peter Smeys
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optically-controlled shunt circuit for maximizing photovoltaic pane...
- Patent number 8,686,332
- Issue date Apr 1, 2014
- National Semiconductor Corporation
- Reda R. Razouk
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Integrated circuit micro-module
- Patent number 7,902,661
- Issue date Mar 8, 2011
- National Semiconductor Corporation
- Peter Smeys
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Copper-topped interconnect structure that has thin and thick copper...
- Patent number 7,709,956
- Issue date May 4, 2010
- National Semiconductor Corporation
- Abdalla Aly Naem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Color imager cell with transistors formed under the photodiodes
- Patent number 7,067,895
- Issue date Jun 27, 2006
- Eastman Kodak Company
- Reda Razouk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radiation hardened MOS transistor
- Patent number 6,730,969
- Issue date May 4, 2004
- National Semiconductor Corporation
- Gobi R. Padmanabhan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep submicron MOS transistor with increased threshold voltage
- Patent number 6,723,593
- Issue date Apr 20, 2004
- National Semiconductor Corporation
- Gobi R. Padmanabhan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Small emitter and base-collector bi-polar transistor
- Patent number 6,696,342
- Issue date Feb 24, 2004
- National Semiconductor Corp.
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polysilicon-edge, low-power, high-frequency bipolar transistor and...
- Patent number 6,603,188
- Issue date Aug 5, 2003
- National Semiconductor Corporation
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of preparing light-sensitive integrated circuits for packaging
- Patent number 6,548,323
- Issue date Apr 15, 2003
- National Semiconductor Corporation
- Jeffrey R. Perry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polysilicon-edge, low-power, high-frequency bipolar transistor and...
- Patent number 6,475,848
- Issue date Nov 5, 2002
- National Semiconductor Corporation
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polysilicon-edge, base-emitter super self-aligned, low-power, high-...
- Patent number 6,380,017
- Issue date Apr 30, 2002
- National Semiconductor Corporation
- Mohamed N. Darwish
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage complementary bipolar and BiCMOS technology using doub...
- Patent number 6,365,447
- Issue date Apr 2, 2002
- National Semiconductor Corporation
- Francois Hèbert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an integrated circuit including filling and plana...
- Patent number 5,911,109
- Issue date Jun 8, 1999
- National Semiconductor Corporation
- Reda R. Razouk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with trenches and an oxygen barrier layer
- Patent number 5,581,110
- Issue date Dec 3, 1996
- National Semiconductor Corporation
- Reda R. Razouk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a polysilicon emitter and a polysilicon gat...
- Patent number 5,179,031
- Issue date Jan 12, 1993
- National Semiconductor Corporation
- Michael P. Brassington
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polysilicon emitter and a polysilicon gate using the same etch of p...
- Patent number 5,124,817
- Issue date Jun 23, 1992
- National Semiconductor Corporation
- Michael P. Brassington
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Use of polysilicon layer for local interconnect in a CMOS or BiCMOS...
- Patent number 5,082,796
- Issue date Jan 21, 1992
- National Semiconductor Corporation
- Monir H. El-Diwany
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Use of a polysilicon layer for local interconnect in a CMOS or BICM...
- Patent number 5,081,518
- Issue date Jan 14, 1992
- National Semiconductor Corporation
- Monir H. El-Diwany
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a polysilicon emitter and a polysilicon gat...
- Patent number 5,001,081
- Issue date Mar 19, 1991
- National Semiconductor Corp.
- Prateep Tuntasood
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of inducing flow or densification of phosphosilicate glass f...
- Patent number 4,455,325
- Issue date Jun 19, 1984
- Fairchild Camera and Instrument Corporation
- Reda Razouk
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
OPTICALLY-CONTROLLED SHUNT CIRCUIT FOR MAXIMIZING PHOTOVOLTAIC PANE...
- Publication number 20120228480
- Publication date Sep 13, 2012
- National Semiconductor Corporation
- Reda R. Razouk
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
INTEGRATED CIRCUIT MICRO-MODULE
- Publication number 20110115071
- Publication date May 19, 2011
- National Semiconductor Corporation
- Peter SMEYS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT MICRO-MODULE
- Publication number 20100213603
- Publication date Aug 26, 2010
- National Semiconductor Corporation
- Peter SMEYS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COPPER-TOPPED INTERCONNECT STRUCTURE THAT HAS THIN AND THICK COPPER...
- Publication number 20100065964
- Publication date Mar 18, 2010
- Abdalla Aly Naem
- H01 - BASIC ELECTRIC ELEMENTS

Reda R. RAZOUK

Person

Patents Grantslast 30 patents

Integrated circuit micro-module

Optically-controlled shunt circuit for maximizing photovoltaic pane...

Integrated circuit micro-module

Copper-topped interconnect structure that has thin and thick copper...

Color imager cell with transistors formed under the photodiodes

Radiation hardened MOS transistor

Deep submicron MOS transistor with increased threshold voltage

Small emitter and base-collector bi-polar transistor

Polysilicon-edge, low-power, high-frequency bipolar transistor and...

Method of preparing light-sensitive integrated circuits for packaging

Polysilicon-edge, low-power, high-frequency bipolar transistor and...

Polysilicon-edge, base-emitter super self-aligned, low-power, high-...

High-voltage complementary bipolar and BiCMOS technology using doub...

Method of forming an integrated circuit including filling and plana...

Integrated circuit with trenches and an oxygen barrier layer

Method of manufacturing a polysilicon emitter and a polysilicon gat...

Polysilicon emitter and a polysilicon gate using the same etch of p...

Use of polysilicon layer for local interconnect in a CMOS or BiCMOS...

Use of a polysilicon layer for local interconnect in a CMOS or BICM...

Method of manufacturing a polysilicon emitter and a polysilicon gat...

Method of inducing flow or densification of phosphosilicate glass f...

Patents Applicationslast 30 patents

OPTICALLY-CONTROLLED SHUNT CIRCUIT FOR MAXIMIZING PHOTOVOLTAIC PANE...

INTEGRATED CIRCUIT MICRO-MODULE

INTEGRATED CIRCUIT MICRO-MODULE

COPPER-TOPPED INTERCONNECT STRUCTURE THAT HAS THIN AND THICK COPPER...