Richard A. Conti

Person

Westchester County, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Nano multilayer carbon-rich low-k spacer
- Patent number 11,791,398
- Issue date Oct 17, 2023
- International Business Machines Corporation
- Donald Canaperi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming shallow trench isolation regions for nanosheet field-effect...
- Patent number 11,322,408
- Issue date May 3, 2022
- International Business Machines Corporation
- Nicolas Loubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual width finned semiconductor structure
- Patent number 11,189,532
- Issue date Nov 30, 2021
- International Business Machines Corporation
- Yi Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Middle-of-line interconnect having low metal-to-metal interface res...
- Patent number 11,114,382
- Issue date Sep 7, 2021
- International Business Machines Corporation
- Alex Joseph Varghese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned gate contact integration with metal resistor
- Patent number 11,056,537
- Issue date Jul 6, 2021
- International Business Machines Corporation
- Xin Miao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nano multilayer carbon-rich low-k spacer
- Patent number 10,937,892
- Issue date Mar 2, 2021
- International Business Machines Corporation
- Donald Canaperi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming shallow trench isolation regions for nanosheet field-effect...
- Patent number 10,910,273
- Issue date Feb 2, 2021
- International Business Machines Corporation
- Nicolas Loubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress modulation of nFET and pFET fin structures
- Patent number 10,832,973
- Issue date Nov 10, 2020
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Highly selective dry etch process for vertical FET STI recess
- Patent number 10,734,245
- Issue date Aug 4, 2020
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual width finned semiconductor structure
- Patent number 10,672,668
- Issue date Jun 2, 2020
- International Business Machines Corporation
- Yi Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress modulation of nFET and pFET fin structures
- Patent number 10,665,512
- Issue date May 26, 2020
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-level air gap formation in dual-damascene structure
- Patent number 10,586,733
- Issue date Mar 10, 2020
- International Business Machines Corporation
- Richard A. Conti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Protection of low temperature isolation fill
- Patent number 10,586,700
- Issue date Mar 10, 2020
- International Business Machines Corporation
- Michael P. Belyansky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Protection of low temperature isolation fill
- Patent number 10,535,550
- Issue date Jan 14, 2020
- International Business Machines Corporation
- Michael P. Belyansky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-level air gap formation in dual-damascene structure
- Patent number 10,224,239
- Issue date Mar 5, 2019
- International Business Machines Corporation
- Richard A. Conti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-level air gap formation in dual-damascene structure
- Patent number 10,204,827
- Issue date Feb 12, 2019
- International Business Machines Corporation
- Richard A. Conti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-level air gap formation in dual-damascene structure
- Patent number 9,859,212
- Issue date Jan 2, 2018
- International Business Machines Corporation
- Richard A. Conti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multilayer sidewall spacer for seam protection of a patterned struc...
- Patent number 8,673,725
- Issue date Mar 18, 2014
- Tokyo Electron Limited
- David L. O'Meara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual sidewall spacer for seam protection of a patterned structure
- Patent number 8,664,102
- Issue date Mar 4, 2014
- Tokyo Electron Limited
- David L. O'Meara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mask forming and implanting methods using implant stopping layer
- Patent number 7,998,871
- Issue date Aug 16, 2011
- International Business Machines Corporation
- Katherina Babich
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Process of making a semiconductor device using multiple antireflect...
- Patent number 7,968,270
- Issue date Jun 28, 2011
- International Business Machines Corporation
- Marie Angelopoulos
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Structure and method to control oxidation in high-k gate structures
- Patent number 7,955,926
- Issue date Jun 7, 2011
- International Business Machines Corporation
- Wesley C. Natzle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming integrated circuit devices having ion-cured elec...
- Patent number 7,838,390
- Issue date Nov 23, 2010
- Samsung Electronics Co., Ltd.
- Jun-jung Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming nitride films with high compressive stress for im...
- Patent number 7,804,136
- Issue date Sep 28, 2010
- International Business Machines Corporation
- Richard A. Conti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mask forming and implanting methods using implant stopping layer an...
- Patent number 7,651,947
- Issue date Jan 26, 2010
- International Business Machines Corporation
- Katherina Babich
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming nitride films with high compressive stress for im...
- Patent number 7,491,660
- Issue date Feb 17, 2009
- International Business Machines Corporation
- Richard A. Conti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of making a semiconductor device using multiple antireflect...
- Patent number 7,485,573
- Issue date Feb 3, 2009
- International Business Machines Corporation
- Marie Angelopoulos
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Method of forming nitride films with high compressive stress for im...
- Patent number 7,462,527
- Issue date Dec 9, 2008
- International Business Machines Corporation
- Richard A. Conti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HDP-based ILD capping layer
- Patent number 7,372,158
- Issue date May 13, 2008
- International Business Machines Corporation
- Yun-Yu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming damascene structure utilizing planarizing materi...
- Patent number 7,326,651
- Issue date Feb 5, 2008
- International Business Machines Corporation
- Heidi Baks
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NANO MULTILAYER CARBON-RICH LOW-K SPACER
- Publication number 20210151579
- Publication date May 20, 2021
- International Business Machines Corporation
- Donald Canaperi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING SHALLOW TRENCH ISOLATION REGIONS FOR NANOSHEET FIELD-EFFECT...
- Publication number 20210111077
- Publication date Apr 15, 2021
- International Business Machines Corporation
- Nicolas Loubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED GATE CONTACT INTEGRATION WITH METAL RESISTOR
- Publication number 20200312909
- Publication date Oct 1, 2020
- International Business Machines Corporation
- Xin Miao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING SHALLOW TRENCH ISOLATION REGIONS FOR NANOSHEET FIELD-EFFECT...
- Publication number 20200273753
- Publication date Aug 27, 2020
- International Business Machines Corporation
- Nicolas Loubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS MODULATION OF NFET AND PFET FIN STRUCTURES
- Publication number 20200266111
- Publication date Aug 20, 2020
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL WIDTH FINNED SEMICONDUCTOR STRUCTURE
- Publication number 20200194314
- Publication date Jun 18, 2020
- International Business Machines Corporation
- Yi Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MIDDLE-OF-LINE INTERCONNECT HAVING LOW METAL-TO-METAL INTERFACE RES...
- Publication number 20200126926
- Publication date Apr 23, 2020
- International Business Machines Corporation
- Alex Joseph Varghese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS MODULATION OF NFET AND PFET FIN STRUCTURES
- Publication number 20200126867
- Publication date Apr 23, 2020
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Highly Selective Dry Etch Process for Vertical FET STI Recess
- Publication number 20200126805
- Publication date Apr 23, 2020
- International Business Machines Corporation
- Zhenxing Bi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANO MULTILAYER CARBON-RICH LOW-K SPACER
- Publication number 20200083345
- Publication date Mar 12, 2020
- International Business Machines Corporation
- Donald Canaperi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PREVENTING DELAMINATION AT SILICON/DIELECTIC INTERFACE
- Publication number 20200051812
- Publication date Feb 13, 2020
- International Business Machines Corporation
- Michael P. Belyansky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL WIDTH FINNED SEMICONDUCTOR STRUCTURE
- Publication number 20190371678
- Publication date Dec 5, 2019
- International Business Machines Corporation
- Yi Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LEVEL AIR GAP FORMATION IN DUAL-DAMASCENE STRUCTURE
- Publication number 20190157140
- Publication date May 23, 2019
- International Business Machines Corporation
- Richard A. Conti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROTECTION OF LOW TEMPERATURE ISOLATION FILL
- Publication number 20190067079
- Publication date Feb 28, 2019
- International Business Machines Corporation
- Michael P. Belyansky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROTECTION OF LOW TEMPERATURE ISOLATION FILL
- Publication number 20190067078
- Publication date Feb 28, 2019
- International Business Machines Corporation
- Michael P. Belyansky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LEVEL AIR GAP FORMATION IN DUAL-DAMASCENE STRUCTURE
- Publication number 20180019202
- Publication date Jan 18, 2018
- International Business Machines Corporation
- Richard A. Conti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LEVEL AIR GAP FORMATION IN DUAL-DAMASCENE STRUCTURE
- Publication number 20180019200
- Publication date Jan 18, 2018
- International Business Machines Corporation
- Richard A. Conti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LEVEL AIR GAP FORMATION IN DUAL-DAMASCENE STRUCTURE
- Publication number 20180019203
- Publication date Jan 18, 2018
- International Business Machines Corporation
- Richard A. Conti
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR REDUCTION OF VT-W EFFECT IN HIGH-K METAL G...
- Publication number 20130140670
- Publication date Jun 6, 2013
- International Business Machines Corporation
- Michael V. Aquilino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR REDUCTION OF VT-W EFFECT IN HIGH-K METAL G...
- Publication number 20120187522
- Publication date Jul 26, 2012
- International Business Machines Corporation
- Michael V. Aquilino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL SIDEWALL SPACER FOR SEAM PROTECTION OF A PATTERNED STRUCTURE
- Publication number 20110241085
- Publication date Oct 6, 2011
- TOKYO ELECTRON LIMITED
- David L. O'Meara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTILAYER SIDEWALL SPACER FOR SEAM PROTECTION OF A PATTERNED STRUC...
- Publication number 20110241128
- Publication date Oct 6, 2011
- TOKYO ELECTRON LIMITED
- David L. O'Meara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A GATE STRUCTURE
- Publication number 20090311855
- Publication date Dec 17, 2009
- Richard A. Bruff
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD TO CONTROL OXIDATION IN HIGH-K GATE STRUCTURES
- Publication number 20090243031
- Publication date Oct 1, 2009
- International Business Machines Corporation
- Wesley C. Natzle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A GATE STRUCTURE AND THE STRUCTURE THEREOF
- Publication number 20090101980
- Publication date Apr 23, 2009
- International Business Machines Corporation
- Richard A. Bruff
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Integrated Circuit Devices Having Ion-Cured Elec...
- Publication number 20090098706
- Publication date Apr 16, 2009
- SAMSUNG ELECTRONICS CO., LTD.
- Jun-jung Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MASK FORMING AND IMPLANTING METHODS USING IMPLANT STOPPING LAYER
- Publication number 20090004869
- Publication date Jan 1, 2009
- Katherina Babich
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS OF MAKING A SEMICONDUCTOR DEVICE USING MULTIPLE ANTIREFLECT...
- Publication number 20080311508
- Publication date Dec 18, 2008
- INTERNATION BUSINESS MACHINES CORPORATION
- Marie Angelopoulos
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
MASK HAVING IMPLANT STOPPING LAYER
- Publication number 20080286545
- Publication date Nov 20, 2008
- Katherina Babich
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR REMOVING MATERIAL FROM A SEMICONDUCTOR
- Publication number 20080233709
- Publication date Sep 25, 2008
- Infineon Technologies North America Corp.
- Richard Anthony Conti
- H01 - BASIC ELECTRIC ELEMENTS

Richard A. Conti

Person

Patents Grantslast 30 patents

Nano multilayer carbon-rich low-k spacer

Forming shallow trench isolation regions for nanosheet field-effect...

Dual width finned semiconductor structure

Middle-of-line interconnect having low metal-to-metal interface res...

Self-aligned gate contact integration with metal resistor

Nano multilayer carbon-rich low-k spacer

Forming shallow trench isolation regions for nanosheet field-effect...

Stress modulation of nFET and pFET fin structures

Highly selective dry etch process for vertical FET STI recess

Dual width finned semiconductor structure

Stress modulation of nFET and pFET fin structures

Multi-level air gap formation in dual-damascene structure

Protection of low temperature isolation fill

Protection of low temperature isolation fill

Multi-level air gap formation in dual-damascene structure

Multi-level air gap formation in dual-damascene structure

Multi-level air gap formation in dual-damascene structure

Multilayer sidewall spacer for seam protection of a patterned struc...

Dual sidewall spacer for seam protection of a patterned structure

Mask forming and implanting methods using implant stopping layer

Process of making a semiconductor device using multiple antireflect...

Structure and method to control oxidation in high-k gate structures

Methods of forming integrated circuit devices having ion-cured elec...

Method of forming nitride films with high compressive stress for im...

Mask forming and implanting methods using implant stopping layer an...

Method of forming nitride films with high compressive stress for im...

Process of making a semiconductor device using multiple antireflect...

Method of forming nitride films with high compressive stress for im...

HDP-based ILD capping layer

Method for forming damascene structure utilizing planarizing materi...

Patents Applicationslast 30 patents

NANO MULTILAYER CARBON-RICH LOW-K SPACER

FORMING SHALLOW TRENCH ISOLATION REGIONS FOR NANOSHEET FIELD-EFFECT...

SELF-ALIGNED GATE CONTACT INTEGRATION WITH METAL RESISTOR

FORMING SHALLOW TRENCH ISOLATION REGIONS FOR NANOSHEET FIELD-EFFECT...

STRESS MODULATION OF NFET AND PFET FIN STRUCTURES

DUAL WIDTH FINNED SEMICONDUCTOR STRUCTURE

MIDDLE-OF-LINE INTERCONNECT HAVING LOW METAL-TO-METAL INTERFACE RES...

STRESS MODULATION OF NFET AND PFET FIN STRUCTURES

Highly Selective Dry Etch Process for Vertical FET STI Recess

NANO MULTILAYER CARBON-RICH LOW-K SPACER

PREVENTING DELAMINATION AT SILICON/DIELECTIC INTERFACE

DUAL WIDTH FINNED SEMICONDUCTOR STRUCTURE

MULTI-LEVEL AIR GAP FORMATION IN DUAL-DAMASCENE STRUCTURE

PROTECTION OF LOW TEMPERATURE ISOLATION FILL

PROTECTION OF LOW TEMPERATURE ISOLATION FILL

MULTI-LEVEL AIR GAP FORMATION IN DUAL-DAMASCENE STRUCTURE

MULTI-LEVEL AIR GAP FORMATION IN DUAL-DAMASCENE STRUCTURE

MULTI-LEVEL AIR GAP FORMATION IN DUAL-DAMASCENE STRUCTURE

STRUCTURE AND METHOD FOR REDUCTION OF VT-W EFFECT IN HIGH-K METAL G...

STRUCTURE AND METHOD FOR REDUCTION OF VT-W EFFECT IN HIGH-K METAL G...

DUAL SIDEWALL SPACER FOR SEAM PROTECTION OF A PATTERNED STRUCTURE

MULTILAYER SIDEWALL SPACER FOR SEAM PROTECTION OF A PATTERNED STRUC...

METHOD OF FABRICATING A GATE STRUCTURE

STRUCTURE AND METHOD TO CONTROL OXIDATION IN HIGH-K GATE STRUCTURES

METHOD OF FABRICATING A GATE STRUCTURE AND THE STRUCTURE THEREOF

Methods of Forming Integrated Circuit Devices Having Ion-Cured Elec...

MASK FORMING AND IMPLANTING METHODS USING IMPLANT STOPPING LAYER

PROCESS OF MAKING A SEMICONDUCTOR DEVICE USING MULTIPLE ANTIREFLECT...

MASK HAVING IMPLANT STOPPING LAYER

METHOD FOR REMOVING MATERIAL FROM A SEMICONDUCTOR