Richard C. Joy

Person

Beacon, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Isolation for high density integrated circuits
- Patent number 4,688,069
- Issue date Aug 18, 1987
- International Business Machines Corporation
- Richard C. Joy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation for high density integrated circuits
- Patent number 4,454,646
- Issue date Jun 19, 1984
- International Business Machines Corporation
- Richard C. Joy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation for high density integrated circuits
- Patent number 4,454,647
- Issue date Jun 19, 1984
- International Business Machines Corporation
- Richard C. Joy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of making field effect transistor having improved threshold...
- Patent number 4,154,626
- Issue date May 15, 1979
- International Business Machines Corporation
- Richard C. Joy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial process for the fabrication of a field effect transistor...
- Patent number 4,089,712
- Issue date May 16, 1978
- International Business Machines Corporation
- Richard C. Joy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for controllng carrier lifetime in semiconduct...
- Patent number 4,053,925
- Issue date Oct 11, 1977
- IBM Corporation
- Peter Burr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor having improved threshold stability
- Patent number 4,028,717
- Issue date Jun 7, 1977
- IBM Corporation
- Richard C. Joy
- H01 - BASIC ELECTRIC ELEMENTS

Richard C. Joy

Person

Patents Grantslast 30 patents

Isolation for high density integrated circuits

Isolation for high density integrated circuits

Isolation for high density integrated circuits

Process of making field effect transistor having improved threshold...

Epitaxial process for the fabrication of a field effect transistor...

Method and structure for controllng carrier lifetime in semiconduct...

Field effect transistor having improved threshold stability