Richard J. Huang

Person

Milpitas, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Mask for forming integrated circuit
- Patent number 8,629,535
- Issue date Jan 14, 2014
- GLOBALFOUNDRIES Inc.
- Richard J. Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming integrated circuit
- Patent number 7,521,304
- Issue date Apr 21, 2009
- Advanced Micro Devices, Inc.
- Richard J. Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a hardmask employing multiple independently form...
- Patent number 7,183,198
- Issue date Feb 27, 2007
- Advanced Micro Devices, Inc.
- Pei-Yuan Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of using carbon spacers for critical dimension (CD) reduction
- Patent number 7,169,711
- Issue date Jan 30, 2007
- Advanced Micro Devices, Inc.
- Christopher F. Lyons
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Slurry-less polishing for removal of excess interconnect material d...
- Patent number 7,141,502
- Issue date Nov 28, 2006
- Advanced Micro Devices, Inc.
- James J. Xie
- B24 - GRINDING POLISHING
Information Patent Grant
Method of forming an interlevel dielectric layer employing dielectr...
- Patent number 7,132,306
- Issue date Nov 7, 2006
- Advanced Micro Devices, Inc.
- Seung-Hyun Rhee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Use of multilayer amorphous carbon ARC stack to eliminate line warp...
- Patent number 7,084,071
- Issue date Aug 1, 2006
- Advanced Micro Devices, Inc.
- Srikanteswara Dakshina-Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-chamber deposition of silicon oxynitride film for patterning
- Patent number 7,033,960
- Issue date Apr 25, 2006
- Advanced Micro Devices, Inc.
- Lu You
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Use of amorphous carbon for gate patterning
- Patent number 7,015,124
- Issue date Mar 21, 2006
- Advanced Micro Devices, Inc.
- Philip A. Fisher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component and method of manufacture
- Patent number 6,927,113
- Issue date Aug 9, 2005
- Advanced Micro Devices
- Kashmir S. Sahota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of amorphous carbon ARC stack having graded transition be...
- Patent number 6,875,664
- Issue date Apr 5, 2005
- Advanced Micro Devices, Inc.
- Richard J. Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
EUV reflective mask having a carbon film and a method of making suc...
- Patent number 6,869,734
- Issue date Mar 22, 2005
- Advanced Micro Devices, Inc.
- Christopher F. Lyons
- G21 - NUCLEAR PHYSICS NUCLEAR ENGINEERING
Information Patent Grant
CVD organic polymer film for advanced gate patterning
- Patent number 6,864,556
- Issue date Mar 8, 2005
- Advanced Micro Devices, Inc.
- Lu You
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of using amorphous carbon to prevent resist poisoning
- Patent number 6,855,627
- Issue date Feb 15, 2005
- Advanced Micro Devices, Inc.
- Srikanteswara Dakshina-Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Continuous barrier for interconnect structure formed in porous diel...
- Patent number 6,831,003
- Issue date Dec 14, 2004
- Advanced Micro Devices, Inc.
- Richard J. Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a hardmask employing multiple independently form...
- Patent number 6,803,313
- Issue date Oct 12, 2004
- Advanced Micro Devices, Inc.
- Pei-Yuan Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cu damascene interconnections using barrier/capping layer
- Patent number 6,689,684
- Issue date Feb 10, 2004
- Advanced Micro Devices, Inc.
- Lu You
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Use of diamond as a hard mask material
- Patent number 6,673,684
- Issue date Jan 6, 2004
- Advanced Micro Devices, Inc.
- Richard J. Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of shallow trench isolation (STI) formation using amorphous...
- Patent number 6,653,202
- Issue date Nov 25, 2003
- Advanced Micro Devices, Inc.
- Philip A. Fisher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for reducing charge gain and charge loss in inter...
- Patent number 6,635,943
- Issue date Oct 21, 2003
- Advanced Micro Devices, Inc.
- Angela T. Hui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming copper interconnect capping layers with improved...
- Patent number 6,596,631
- Issue date Jul 22, 2003
- Advanced Micro Devices, Inc.
- Minh Van Ngo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of using amorphous carbon as spacer material in a disposable...
- Patent number 6,559,017
- Issue date May 6, 2003
- Advanced Micro Devices, Inc.
- David E. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus for manufacturing planar spin-on films
- Patent number 6,530,340
- Issue date Mar 11, 2003
- Advanced Micro Devices, Inc.
- Lu You
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with variable composition low-k inter-layer di...
- Patent number 6,518,646
- Issue date Feb 11, 2003
- Advanced Micro Devices, Inc.
- Dawn M. Hopper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of re-working copper damascene wafers
- Patent number 6,495,443
- Issue date Dec 17, 2002
- Advanced Micro Devices, Inc.
- Sergey Lopatin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
METHOD FOR REDUCING STRESS-INDUCED VOIDS FOR 0.25-μM AND SMA...
- Patent number 6,492,258
- Issue date Dec 10, 2002
- Advanced Micro Devices, Inc.
- Minh Van Ngo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of low-k SiOF as inter-layer dielectric
- Patent number 6,489,230
- Issue date Dec 3, 2002
- Advanced Micro Devices, Inc.
- Richard J. Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming an encapsulating layer after deposition of a dielectric com...
- Patent number 6,472,336
- Issue date Oct 29, 2002
- Advanced Micro Devices, Inc.
- Suzette K. Pangrle
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Surface treatment of low-K SiOF to prevent metal interaction
- Patent number 6,444,593
- Issue date Sep 3, 2002
- Advanced Micro Devices, Inc.
- Minh Van Ngo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory device with encapsulated tungsten gate and meth...
- Patent number 6,429,108
- Issue date Aug 6, 2002
- Advanced Micro Devices, Inc.
- Chi Chang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MASK FOR FORMING INTEGRATED CIRCUIT
- Publication number 20120007221
- Publication date Jan 12, 2012
- GLOBALFOUNDRIES INC.
- Richard J. Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hardmask employing multiple layers of silicon oxynitride
- Publication number 20050048771
- Publication date Mar 3, 2005
- Advanced Micro Devices, Inc.
- Pei-Yuan Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A SEMICONDUCTOR COMPONENT HAVING A BARRIER...
- Publication number 20040175926
- Publication date Sep 9, 2004
- Advanced Micro Devices, Inc.
- Pin-Chin Connie Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hardmask employing multiple layers of silicon oxynitride
- Publication number 20040061227
- Publication date Apr 1, 2004
- Advanced Micro Devices, Inc.
- Pei-Yuan Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Tungsten gate MOS transistor and memory cell and method of making same
- Publication number 20020137284
- Publication date Sep 26, 2002
- Advanced Micro Devices, Inc.
- Chi Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for removing copper from a wafer edge
- Publication number 20020106905
- Publication date Aug 8, 2002
- Advanced Micro Devices, Inc.
- Minh Q. Tran
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR REDUCING STRESS-INDUCED VOIDS FOR 0.25U AND SMALLER SEMI...
- Publication number 20020003306
- Publication date Jan 10, 2002
- MINH VAN NGO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for characterizing and reducing adverse effects of texture...
- Publication number 20010053600
- Publication date Dec 20, 2001
- Guarionex Morales
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SURFACE TREATMENT OF LOW-K SIOF TO PREVENT METAL INTERACTION
- Publication number 20010044203
- Publication date Nov 22, 2001
- RICHARD J. HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR MODIFYING AND DENSIFYING A POROUS FILM
- Publication number 20010038889
- Publication date Nov 8, 2001
- SUZETTE K. PANGRLE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integration of low-k SiOF for damascene structure
- Publication number 20010016419
- Publication date Aug 23, 2001
- Richard J. Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS FOR MANUFACTURING PLANAR SPIN-ON FILMS
- Publication number 20010001407
- Publication date May 24, 2001
- LU YOU
- H01 - BASIC ELECTRIC ELEMENTS

Richard J. Huang

Person

Patents Grantslast 30 patents

Mask for forming integrated circuit

Method for forming integrated circuit

Method for forming a hardmask employing multiple independently form...

Method of using carbon spacers for critical dimension (CD) reduction

Slurry-less polishing for removal of excess interconnect material d...

Method of forming an interlevel dielectric layer employing dielectr...

Use of multilayer amorphous carbon ARC stack to eliminate line warp...

Multi-chamber deposition of silicon oxynitride film for patterning

Use of amorphous carbon for gate patterning

Semiconductor component and method of manufacture

Formation of amorphous carbon ARC stack having graded transition be...

EUV reflective mask having a carbon film and a method of making suc...

CVD organic polymer film for advanced gate patterning

Method of using amorphous carbon to prevent resist poisoning

Continuous barrier for interconnect structure formed in porous diel...

Method for forming a hardmask employing multiple independently form...

Cu damascene interconnections using barrier/capping layer

Use of diamond as a hard mask material

Method of shallow trench isolation (STI) formation using amorphous...

Method and system for reducing charge gain and charge loss in inter...

Method of forming copper interconnect capping layers with improved...

Method of using amorphous carbon as spacer material in a disposable...

Apparatus for manufacturing planar spin-on films

Semiconductor device with variable composition low-k inter-layer di...

Method of re-working copper damascene wafers

METHOD FOR REDUCING STRESS-INDUCED VOIDS FOR 0.25-&#x03BC;M AND SMA...

Integration of low-k SiOF as inter-layer dielectric

Forming an encapsulating layer after deposition of a dielectric com...

Surface treatment of low-K SiOF to prevent metal interaction

Non-volatile memory device with encapsulated tungsten gate and meth...

Patents Applicationslast 30 patents

MASK FOR FORMING INTEGRATED CIRCUIT

Hardmask employing multiple layers of silicon oxynitride

METHOD FOR MANUFACTURING A SEMICONDUCTOR COMPONENT HAVING A BARRIER...

Hardmask employing multiple layers of silicon oxynitride

Tungsten gate MOS transistor and memory cell and method of making same

Method for removing copper from a wafer edge

METHOD FOR REDUCING STRESS-INDUCED VOIDS FOR 0.25U AND SMALLER SEMI...

Methods for characterizing and reducing adverse effects of texture...

SURFACE TREATMENT OF LOW-K SIOF TO PREVENT METAL INTERACTION

METHOD AND SYSTEM FOR MODIFYING AND DENSIFYING A POROUS FILM

Integration of low-k SiOF for damascene structure

APPARATUS FOR MANUFACTURING PLANAR SPIN-ON FILMS

METHOD FOR REDUCING STRESS-INDUCED VOIDS FOR 0.25-μM AND SMA...