Richard S. Burton

Person

Phoenix, AZ, US

People

Patents Grantslast 30 patents

Information Patent Grant
Methods for making bipolar junction transistors including emitter-b...
- Patent number 11,935,940
- Issue date Mar 19, 2024
- ATOMERA INCORPORATED
- Richard Burton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistors including emitter-base and base-collec...
- Patent number 11,923,431
- Issue date Mar 5, 2024
- ATOMERA INCORPORATED
- Richard Burton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a superlattice and an asymmetric cha...
- Patent number 11,869,968
- Issue date Jan 9, 2024
- ATOMERA INCORPORATED
- Hideki Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical semiconductor device with enhanced contact structure and a...
- Patent number 11,664,427
- Issue date May 30, 2023
- ATOMERA INCORPORATED
- Robert John Stephenson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for making bipolar junction transistors including emitter-b...
- Patent number 11,437,486
- Issue date Sep 6, 2022
- ATOMERA INCORPORATED
- Richard Burton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistors including emitter-base and base-collec...
- Patent number 11,437,487
- Issue date Sep 6, 2022
- ATOMERA INCORPORATED
- Richard Burton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical semiconductor device with enhanced contact structure and a...
- Patent number 11,387,325
- Issue date Jul 12, 2022
- ATOMERA INCORPORATED
- Robert John Stephenson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a superlattice and an asymmetric cha...
- Patent number 11,329,154
- Issue date May 10, 2022
- ATOMERA INCORPORATED
- Hideki Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including hyper-abrupt junction region includ...
- Patent number 11,183,565
- Issue date Nov 23, 2021
- ATOMERA INCORPORATED
- Richard Burton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a semiconductor device including a superlattice a...
- Patent number 11,094,818
- Issue date Aug 17, 2021
- ATOMERA INCORPORATED
- Hideki Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a semiconductor device including a superlattice w...
- Patent number 11,075,078
- Issue date Jul 27, 2021
- ATOMERA INCORPORATED
- Nyles Wynn Cody
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage capacitor and method
- Patent number 11,018,216
- Issue date May 25, 2021
- Semiconductor Components Industries, LLC
- Richard Scott Burton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making semiconductor devices with hyper-abrupt junction...
- Patent number 10,937,868
- Issue date Mar 2, 2021
- ATOMERA INCORPORATED
- Richard Burton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a varactor with a hyper-abrupt junction region in...
- Patent number 10,937,888
- Issue date Mar 2, 2021
- ATOMERA INCORPORATED
- Richard Burton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a semiconductor device including enhanced contact...
- Patent number 10,879,356
- Issue date Dec 29, 2020
- ATOMERA INCORPORATED
- Robert John Stephenson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a semiconductor device having a hyper-abrupt junc...
- Patent number 10,879,357
- Issue date Dec 29, 2020
- ATOMERA INCORPORATED
- Richard Burton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a varactor with hyper-abrupt junction region incl...
- Patent number 10,868,120
- Issue date Dec 15, 2020
- ATOMERA INCORPORATED
- Richard Burton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a FINFET including source and drain dopant diffus...
- Patent number 10,854,717
- Issue date Dec 1, 2020
- ATOMERA INCORPORATED
- Hideki Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including body contact dopant diffusion blocki...
- Patent number 10,847,618
- Issue date Nov 24, 2020
- ATOMERA INCORPORATED
- Hideki Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making semiconductor device including body contact dopan...
- Patent number 10,840,335
- Issue date Nov 17, 2020
- ATOMERA INCORPORATED
- Hideki Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with metal-semiconductor contacts including ox...
- Patent number 10,840,336
- Issue date Nov 17, 2020
- ATOMERA INCORPORATED
- Daniel Connelly
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Varactor with hyper-abrupt junction region including a superlattice
- Patent number 10,840,388
- Issue date Nov 17, 2020
- ATOMERA INCORPORATED
- Richard Burton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a FINFET having reduced contact resistance
- Patent number 10,840,337
- Issue date Nov 17, 2020
- ATOMERA INCORPORATED
- Hideki Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including hyper-abrupt junction region includ...
- Patent number 10,825,901
- Issue date Nov 3, 2020
- ATOMERA INCORPORATED
- Richard Burton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Varactor with hyper-abrupt junction region including spaced-apart s...
- Patent number 10,825,902
- Issue date Nov 3, 2020
- ATOMERA INCORPORATED
- Richard Burton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making semiconductor device including source/drain dopan...
- Patent number 10,818,755
- Issue date Oct 27, 2020
- ATOMERA INCORPORATED
- Hideki Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including enhanced contact structures having a...
- Patent number 10,777,451
- Issue date Sep 15, 2020
- ATOMERA INCORPORATED
- Robert John Stephenson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrostatic discharge (ESD) robust transistors and related methods
- Patent number 10,692,853
- Issue date Jun 23, 2020
- Semiconductor Components Industries, LLC
- Shuji Fujiwara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Galvanically-isolated signaling between modules with step-up transf...
- Patent number 10,637,468
- Issue date Apr 28, 2020
- Semiconductor Components Industries, LLC
- Karel Ptacek
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Method for making a semiconductor device having reduced contact res...
- Patent number 10,593,761
- Issue date Mar 17, 2020
- ATOMERA INCORPORATED
- Hideki Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHODS FOR MAKING BIPOLAR JUNCTION TRANSISTORS INCLUDING EMITTER-B...
- Publication number 20240250146
- Publication date Jul 25, 2024
- ATOMERA INCORPORATED
- RICHARD BURTON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTORS INCLUDING EMITTER-BASE AND BASE-COLLEC...
- Publication number 20240097003
- Publication date Mar 21, 2024
- ATOMERA INCORPORATED
- RICHARD BURTON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A SUPERLATTICE AND AN ASYMMETRIC CHA...
- Publication number 20240097026
- Publication date Mar 21, 2024
- ATOMERA INCORPORATED
- HIDEKI TAKEUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTORS INCLUDING EMITTER-BASE AND BASE-COLLEC...
- Publication number 20220367676
- Publication date Nov 17, 2022
- ATOMERA INCORPORATED
- RICHARD BURTON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR MAKING BIPOLAR JUNCTION TRANSISTORS INCLUDING EMITTER-B...
- Publication number 20220367675
- Publication date Nov 17, 2022
- ATOMERA INCORPORATED
- RICHARD BURTON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL SEMICONDUCTOR DEVICE WITH ENHANCED CONTACT STRUCTURE AND A...
- Publication number 20220285498
- Publication date Sep 8, 2022
- ATOMERA INCORPORATED
- Robert John Stephenson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A SUPERLATTICE AND AN ASYMMETRIC CHA...
- Publication number 20220238710
- Publication date Jul 28, 2022
- ATOMERA INCORPORATED
- HIDEKI TAKEUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR MAKING BIPOLAR JUNCTION TRANSISTORS INCLUDING EMITTER-B...
- Publication number 20210217875
- Publication date Jul 15, 2021
- ATOMERA INCORPORATED
- RICHARD BURTON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTORS INCLUDING EMITTER-BASE AND BASE-COLLEC...
- Publication number 20210217880
- Publication date Jul 15, 2021
- ATOMERA INCORPORATED
- RICHARD BURTON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL SEMICONDUCTOR DEVICE WITH ENHANCED CONTACT STRUCTURE AND A...
- Publication number 20210074814
- Publication date Mar 11, 2021
- ATOMERA INCORPORATED
- Robert John Stephenson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES INCLUDING HYPER-ABRUPT JUNCTION REGION INCLUD...
- Publication number 20210020749
- Publication date Jan 21, 2021
- ATOMERA INCORPORATED
- Richard Burton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING A SEMICONDUCTOR DEVICE HAVING A HYPER-ABRUPT JUNC...
- Publication number 20210020748
- Publication date Jan 21, 2021
- ATOMERA INCORPORATED
- Richard Burton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING A VARACTOR WITH A HYPER-ABRUPT JUNCTION REGION IN...
- Publication number 20210020759
- Publication date Jan 21, 2021
- ATOMERA INCORPORATED
- Richard Burton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING SEMICONDUCTOR DEVICES WITH HYPER-ABRUPT JUNCTION...
- Publication number 20210020750
- Publication date Jan 21, 2021
- ATOMERA INCORPORATED
- Richard Burton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING A SEMICONDUCTOR DEVICE INCLUDING A SUPERLATTICE A...
- Publication number 20200343367
- Publication date Oct 29, 2020
- ATOMERA INCORPORATED
- HIDEKI TAKEUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A SUPERLATTICE AND AN ASYMMETRIC CHA...
- Publication number 20200343380
- Publication date Oct 29, 2020
- ATOMERA INCORPORATED
- HIDEKI TAKEUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTROSTATIC DISCHARGE (ESD) ROBUST TRANSISTORS AND RELATED METHODS
- Publication number 20200294993
- Publication date Sep 17, 2020
- Semiconductor Components Industries, LLC
- Shuji FUJIWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING SEMICONDUCTOR DEVICE INCLUDING SOURCE/DRAIN DOPAN...
- Publication number 20200161429
- Publication date May 21, 2020
- ATOMERA INCORPORATED
- HIDEKI TAKEUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH METAL-SEMICONDUCTOR CONTACTS INCLUDING OX...
- Publication number 20200161426
- Publication date May 21, 2020
- ATOMERA INCORPORATED
- Daniel Connelly
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING A FINFET HAVING REDUCED CONTACT RESISTANCE
- Publication number 20200161427
- Publication date May 21, 2020
- ATOMERA INCORPORATED
- HIDEKI TAKEUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING BODY CONTACT DOPANT DIFFUSION BLOCKI...
- Publication number 20200161430
- Publication date May 21, 2020
- ATOMERA INCORPORATED
- HIDEKI TAKEUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING SEMICONDUCTOR DEVICE INCLUDING BODY CONTACT DOPAN...
- Publication number 20200161425
- Publication date May 21, 2020
- ATOMERA INCORPORATED
- HIDEKI TAKEUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING A FINFET INCLUDING SOURCE AND DRAIN DOPANT DIFFUS...
- Publication number 20200161428
- Publication date May 21, 2020
- ATOMERA INCORPORATED
- HIDEKI TAKEUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE CAPACITOR AND METHOD
- Publication number 20190319087
- Publication date Oct 17, 2019
- Semiconductor Components Industries, LLC
- Richard Scott Burton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING ENHANCED CONTACT STRUCTURES HAVING A...
- Publication number 20190280090
- Publication date Sep 12, 2019
- ATOMERA INCORPORATED
- Robert John Stephenson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING A SEMICONDUCTOR DEVICE INCLUDING ENHANCED CONTACT...
- Publication number 20190279897
- Publication date Sep 12, 2019
- ATOMERA INCORPORATED
- Robert John Stephenson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESONANCE-COUPLED SIGNALING BETWEEN IC MODULES
- Publication number 20180240761
- Publication date Aug 23, 2018
- Semiconductor Components Industries, LLC
- Richard Scott Burton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALVANICALLY-ISOLATED SIGNALING BETWEEN MODULES WITH STEP-UP TRANSF...
- Publication number 20180109257
- Publication date Apr 19, 2018
- Semiconductor Components Industries, LLC
- Richard Scott Burton
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
RECEIVER FOR RESONANCE-COUPLED SIGNALING
- Publication number 20180109256
- Publication date Apr 19, 2018
- Semiconductor Components Industries, LLC
- Richard Scott Burton
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
RESONANCE-COUPLED SIGNALING BETWEEN IC MODULES
- Publication number 20180108621
- Publication date Apr 19, 2018
- Semiconductor Components Industries, LLC
- Richard Scott Burton
- H01 - BASIC ELECTRIC ELEMENTS

Richard S. Burton

Person

Patents Grantslast 30 patents

Methods for making bipolar junction transistors including emitter-b...

Bipolar junction transistors including emitter-base and base-collec...

Semiconductor device including a superlattice and an asymmetric cha...

Vertical semiconductor device with enhanced contact structure and a...

Methods for making bipolar junction transistors including emitter-b...

Bipolar junction transistors including emitter-base and base-collec...

Vertical semiconductor device with enhanced contact structure and a...

Semiconductor device including a superlattice and an asymmetric cha...

Semiconductor devices including hyper-abrupt junction region includ...

Method for making a semiconductor device including a superlattice a...

Method for making a semiconductor device including a superlattice w...

High voltage capacitor and method

Method for making semiconductor devices with hyper-abrupt junction...

Method for making a varactor with a hyper-abrupt junction region in...

Method for making a semiconductor device including enhanced contact...

Method for making a semiconductor device having a hyper-abrupt junc...

Method for making a varactor with hyper-abrupt junction region incl...

Method for making a FINFET including source and drain dopant diffus...

Semiconductor device including body contact dopant diffusion blocki...

Method for making semiconductor device including body contact dopan...

Semiconductor device with metal-semiconductor contacts including ox...

Varactor with hyper-abrupt junction region including a superlattice

Method for making a FINFET having reduced contact resistance

Semiconductor devices including hyper-abrupt junction region includ...

Varactor with hyper-abrupt junction region including spaced-apart s...

Method for making semiconductor device including source/drain dopan...

Semiconductor device including enhanced contact structures having a...

Electrostatic discharge (ESD) robust transistors and related methods

Galvanically-isolated signaling between modules with step-up transf...

Method for making a semiconductor device having reduced contact res...

Patents Applicationslast 30 patents

METHODS FOR MAKING BIPOLAR JUNCTION TRANSISTORS INCLUDING EMITTER-B...

BIPOLAR JUNCTION TRANSISTORS INCLUDING EMITTER-BASE AND BASE-COLLEC...

SEMICONDUCTOR DEVICE INCLUDING A SUPERLATTICE AND AN ASYMMETRIC CHA...

BIPOLAR JUNCTION TRANSISTORS INCLUDING EMITTER-BASE AND BASE-COLLEC...

METHODS FOR MAKING BIPOLAR JUNCTION TRANSISTORS INCLUDING EMITTER-B...

VERTICAL SEMICONDUCTOR DEVICE WITH ENHANCED CONTACT STRUCTURE AND A...

SEMICONDUCTOR DEVICE INCLUDING A SUPERLATTICE AND AN ASYMMETRIC CHA...

METHODS FOR MAKING BIPOLAR JUNCTION TRANSISTORS INCLUDING EMITTER-B...

BIPOLAR JUNCTION TRANSISTORS INCLUDING EMITTER-BASE AND BASE-COLLEC...

VERTICAL SEMICONDUCTOR DEVICE WITH ENHANCED CONTACT STRUCTURE AND A...

SEMICONDUCTOR DEVICES INCLUDING HYPER-ABRUPT JUNCTION REGION INCLUD...

METHOD FOR MAKING A SEMICONDUCTOR DEVICE HAVING A HYPER-ABRUPT JUNC...

METHOD FOR MAKING A VARACTOR WITH A HYPER-ABRUPT JUNCTION REGION IN...

METHOD FOR MAKING SEMICONDUCTOR DEVICES WITH HYPER-ABRUPT JUNCTION...

METHOD FOR MAKING A SEMICONDUCTOR DEVICE INCLUDING A SUPERLATTICE A...

SEMICONDUCTOR DEVICE INCLUDING A SUPERLATTICE AND AN ASYMMETRIC CHA...

ELECTROSTATIC DISCHARGE (ESD) ROBUST TRANSISTORS AND RELATED METHODS

METHOD FOR MAKING SEMICONDUCTOR DEVICE INCLUDING SOURCE/DRAIN DOPAN...

SEMICONDUCTOR DEVICE WITH METAL-SEMICONDUCTOR CONTACTS INCLUDING OX...

METHOD FOR MAKING A FINFET HAVING REDUCED CONTACT RESISTANCE

SEMICONDUCTOR DEVICE INCLUDING BODY CONTACT DOPANT DIFFUSION BLOCKI...

METHOD FOR MAKING SEMICONDUCTOR DEVICE INCLUDING BODY CONTACT DOPAN...

METHOD FOR MAKING A FINFET INCLUDING SOURCE AND DRAIN DOPANT DIFFUS...

HIGH VOLTAGE CAPACITOR AND METHOD

SEMICONDUCTOR DEVICE INCLUDING ENHANCED CONTACT STRUCTURES HAVING A...

METHOD FOR MAKING A SEMICONDUCTOR DEVICE INCLUDING ENHANCED CONTACT...

RESONANCE-COUPLED SIGNALING BETWEEN IC MODULES

GALVANICALLY-ISOLATED SIGNALING BETWEEN MODULES WITH STEP-UP TRANSF...

RECEIVER FOR RESONANCE-COUPLED SIGNALING

RESONANCE-COUPLED SIGNALING BETWEEN IC MODULES