Rick C. Jerome

Person

Puyallup, WA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method of fabricating BiCMOS device
- Patent number 5,661,046
- Issue date Aug 26, 1997
- National Semiconductor Corporation
- Vida Ilderem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device with increased breakdown voltage
- Patent number 5,493,149
- Issue date Feb 20, 1996
- National Semiconductor Corporation
- Rick C. Jerome
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical fuse device
- Patent number 5,436,496
- Issue date Jul 25, 1995
- National Semiconductor Corporation
- Rick C. Jerome
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistance silicided substrate contact
- Patent number 5,350,942
- Issue date Sep 27, 1994
- National Semiconductor Corporation
- Rick C. Jerome
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating BiCMOS device
- Patent number 5,338,694
- Issue date Aug 16, 1994
- National Semiconductor Corporation
- Vida Ilderem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating BiCMOS device
- Patent number 5,338,696
- Issue date Aug 16, 1994
- National Semiconductor Corporation
- Vida Ilderem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabrication of transistor device with increased breakdown...
- Patent number 5,298,440
- Issue date Mar 29, 1994
- National Semiconductor Corporation
- Rick C. Jerome
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of silicide contacts using a sidewall oxide process
- Patent number 5,231,042
- Issue date Jul 27, 1993
- National Semiconductor Corporation
- Vida Ilderem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing base resistance of a BJT by forming a self aligned silicid...
- Patent number 5,139,961
- Issue date Aug 18, 1992
- National Semiconductor Corporation
- Alan G. Solheim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistance silicided substrate contact
- Patent number 5,139,966
- Issue date Aug 18, 1992
- National Semiconductor Corporation
- Rick C. Jerome
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interconnect method for semiconductor devices
- Patent number 5,107,321
- Issue date Apr 21, 1992
- National Semiconductor Corporation
- Vida Ilderem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky barrier diode for alpha particle resistant static random a...
- Patent number 4,903,087
- Issue date Feb 20, 1990
- National Semiconductor Corporation
- Rick C. Jerome
- H01 - BASIC ELECTRIC ELEMENTS

Rick C. Jerome

Person

Patents Grantslast 30 patents

Method of fabricating BiCMOS device

Transistor device with increased breakdown voltage

Vertical fuse device

Low resistance silicided substrate contact

Method of fabricating BiCMOS device

Method of fabricating BiCMOS device

Method of fabrication of transistor device with increased breakdown...

Formation of silicide contacts using a sidewall oxide process

Reducing base resistance of a BJT by forming a self aligned silicid...

Low resistance silicided substrate contact

Interconnect method for semiconductor devices

Schottky barrier diode for alpha particle resistant static random a...