This is a division of application Ser. No. 503,336 filed Apr. 2, 1990, now U.S. Pat. No. 5,107,321.
Number | Name | Date | Kind |
---|---|---|---|
3955269 | Magdo et al. | May 1976 | |
4374700 | Scott et al. | Feb 1983 | |
4484388 | Iwasaki | Nov 1984 | |
4507847 | Sullivan | Apr 1985 | |
4536945 | Gray et al. | Aug 1985 | |
4558507 | Okabayashi et al. | Dec 1985 | |
4609568 | Koh et al. | Sep 1986 | |
4764480 | Vora | Aug 1988 | |
4784971 | Chiu et al. | Nov 1988 | |
4808548 | Thomas et al. | Feb 1989 | |
4810666 | Taji | Mar 1989 | |
4877755 | Rodder | Oct 1989 | |
4927775 | Alvarez et al. | May 1990 | |
4927776 | Soejima | May 1990 | |
4929992 | Thomas et al. | May 1990 | |
4960726 | Lechaton et al. | Oct 1990 | |
4965220 | Iwasaki | Oct 1990 | |
5001081 | Tuntasood et al. | Mar 1991 | |
5021354 | Pfiester | Jun 1991 | |
5045483 | DeLong et al. | Sep 1991 |
Number | Date | Country |
---|---|---|
0197531 | Oct 1986 | EPX |
0200603 | Nov 1986 | EPX |
WO8607491 | Dec 1986 | WOX |
WO8911733 | Nov 1989 | WOX |
2151847 | Jul 1985 | GBX |
Entry |
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Brassington et al., IEEE Trans. Elect. Devices (1989) pp. 712-719. |
Momose et al., IEDM Transactions (Feb. 1985) p. 217. |
Kapoor et al., "A High Speed High Density . . . for Linear/Digital Applications," 1985 Custom Integrated Circuits Conference. |
Gomi et al., IEDM Technical Digest (1988) pp. 744-747. |
Haken et al., "BiCMOS Process Technology," BiCMOS Technology and Applications (1989) pp. 63-124. |
Ghandhi, VLSI Fabrication Principles, Silicon and Gallium Arsenide, John Wiley & Sons, New York, 1983, pp. 383-384. |
Irene et al., J. Electrochem. Soc.: Solid-State Science and Technology, Jul. 1978, pp. 1146-1151. |
Ghandhi, VLSI Fabrication Principles, Silicon and Gallium Arsenide, John Wiley & Sons, New York, 1983, pp. 493-494. |
Berger et al., "Method of Producing Transistors with Optimum Base Contact," IBM Tech. Discl. Bull. (1980) 23:1487-1488. |
Number | Date | Country | |
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Parent | 503336 | Apr 1990 |