Ricky S. Amos

Person

Rhinebeck, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Field effect device with reduced thickness gate
- Patent number 8,492,803
- Issue date Jul 23, 2013
- International Business Machines Corporation
- Ricky S. Amos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method to form multilayer embedded stressors
- Patent number 7,960,798
- Issue date Jun 14, 2011
- International Business Machines Corporation
- Zhijiong Luo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High temperature processing compatible metal gate electrode for pFE...
- Patent number 7,863,083
- Issue date Jan 4, 2011
- International Business Machines Corporation
- Ricky Amos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS silicide metal gate integration
- Patent number 7,655,557
- Issue date Feb 2, 2010
- International Business Machines Corporation
- Ricky S. Amos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method to form multilayer embedded stressors
- Patent number 7,618,866
- Issue date Nov 17, 2009
- International Business Machines Corporation
- Zhijiong Luo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Feed forward silicide control scheme based on spacer height control...
- Patent number 7,479,436
- Issue date Jan 20, 2009
- International Business Machines Corporation
- Ricky S. Amos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect device with reduced thickness gate
- Patent number 7,459,382
- Issue date Dec 2, 2008
- International Business Machines Corporation
- Ricky S. Amos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS silicide metal gate integration
- Patent number 7,411,227
- Issue date Aug 12, 2008
- International Business Machines Corporation
- Ricky S. Amos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process options of forming silicided metal gates for advanced CMOS...
- Patent number 7,326,610
- Issue date Feb 5, 2008
- International Business Machines Corporation
- Ricky S. Amos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS silicide metal gate integration
- Patent number 7,056,782
- Issue date Jun 6, 2006
- International Business Machines Corporation
- Ricky S. Amos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process options of forming silicided metal gates for advanced CMOS...
- Patent number 7,029,966
- Issue date Apr 18, 2006
- International Business Machines Corporation
- Ricky S. Amos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High performance CMOS device structure with mid-gap metal gate
- Patent number 6,916,698
- Issue date Jul 12, 2005
- International Business Machines Corporation
- Anda C. Mocuta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and process to make multiple-threshold metal gates CMOS tech...
- Patent number 6,846,734
- Issue date Jan 25, 2005
- International Business Machines Corporation
- Ricky Amos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High performance CMOS device structure with mid-gap metal gate
- Patent number 6,762,469
- Issue date Jul 13, 2004
- International Business Machines Corporation
- Anda C. Mocuta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming thermally stable polycrystal to single crystal el...
- Patent number 6,429,101
- Issue date Aug 6, 2002
- International Business Machines Corporation
- Ricky S. Amos
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
STRUCTURE AND METHOD TO FORM MULTILAYER EMBEDDED STRESSORS
- Publication number 20100059764
- Publication date Mar 11, 2010
- International Business Machines Corporation
- Zhijiong Luo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT DEVICE WITH REDUCED THICKNESS GATE
- Publication number 20090159934
- Publication date Jun 25, 2009
- International Business Machines Corporation
- Ricky S. Amos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Temperature Processing Compatible Metal Gate Electrode For pFE...
- Publication number 20080311745
- Publication date Dec 18, 2008
- International Business Machines Corporation
- Ricky Amos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS SILICIDE METAL GATE INTEGRATION
- Publication number 20080254622
- Publication date Oct 16, 2008
- International Business Machines Corporation
- Ricky S. Amos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FEED FORWARD SILICIDE CONTROL SCHEME BASED ON SPACER HEIGHT CONTROL...
- Publication number 20080188014
- Publication date Aug 7, 2008
- International Business Machines Corporation
- Ricky S. Amos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD TO FORM MULTILAYER EMBEDDED STRESSORS
- Publication number 20080006818
- Publication date Jan 10, 2008
- International Business Machines Corporation
- Zhijiong Luo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT DEVICE WITH REDUCED THICKNESS GATE
- Publication number 20070221964
- Publication date Sep 27, 2007
- International Business Machines Corporation
- Ricky S. Amos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS silicide metal gate integration
- Publication number 20060189061
- Publication date Aug 24, 2006
- Ricky S. Amos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process options of forming silicided metal gates for advanced CMOS...
- Publication number 20060105515
- Publication date May 18, 2006
- IBM CORPORATION
- Ricky S. Amos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS silicide metal gate integration
- Publication number 20050186747
- Publication date Aug 25, 2005
- International Business Machines Corporation
- Ricky S. Amos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and process to make multiple-threshold metal gates CMOS tech...
- Publication number 20050106788
- Publication date May 19, 2005
- International Business Machines Corporation
- Ricky Amos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS OPTIONS OF FORMING SILICIDED METAL GATES FOR ADVANCED CMOS...
- Publication number 20050064690
- Publication date Mar 24, 2005
- International Business Machines Corporation
- Ricky S. Amos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High performance CMOS device structure with mid-gap metal gate
- Publication number 20040171205
- Publication date Sep 2, 2004
- International Business Machines Corporation
- Anda C. Mocuta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and process to make multiple-threshold metal gates CMOS tech...
- Publication number 20040094804
- Publication date May 20, 2004
- International Business Machines Corporation
- Ricky Amos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High performance CMOS device structure with mid-gap metal gate
- Publication number 20030197230
- Publication date Oct 23, 2003
- International Business Machines Corporation
- Anda C. Mocuta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High temperature processing compatible metal gate electrode for pFE...
- Publication number 20030098489
- Publication date May 29, 2003
- International Business Machines Corporation
- Ricky Amos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thermally stable polycrystal to single crystal electrical contact s...
- Publication number 20020137300
- Publication date Sep 26, 2002
- International Business Machines Corporation
- Ricky S. Amos
- H01 - BASIC ELECTRIC ELEMENTS

Ricky S. Amos

Person

Patents Grantslast 30 patents

Field effect device with reduced thickness gate

Structure and method to form multilayer embedded stressors

High temperature processing compatible metal gate electrode for pFE...

CMOS silicide metal gate integration

Structure and method to form multilayer embedded stressors

Feed forward silicide control scheme based on spacer height control...

Field effect device with reduced thickness gate

CMOS silicide metal gate integration

Process options of forming silicided metal gates for advanced CMOS...

CMOS silicide metal gate integration

Process options of forming silicided metal gates for advanced CMOS...

High performance CMOS device structure with mid-gap metal gate

Method and process to make multiple-threshold metal gates CMOS tech...

High performance CMOS device structure with mid-gap metal gate

Method of forming thermally stable polycrystal to single crystal el...

Patents Applicationslast 30 patents

STRUCTURE AND METHOD TO FORM MULTILAYER EMBEDDED STRESSORS

FIELD EFFECT DEVICE WITH REDUCED THICKNESS GATE

High Temperature Processing Compatible Metal Gate Electrode For pFE...

CMOS SILICIDE METAL GATE INTEGRATION

FEED FORWARD SILICIDE CONTROL SCHEME BASED ON SPACER HEIGHT CONTROL...

STRUCTURE AND METHOD TO FORM MULTILAYER EMBEDDED STRESSORS

FIELD EFFECT DEVICE WITH REDUCED THICKNESS GATE

CMOS silicide metal gate integration

Process options of forming silicided metal gates for advanced CMOS...

CMOS silicide metal gate integration

Method and process to make multiple-threshold metal gates CMOS tech...

PROCESS OPTIONS OF FORMING SILICIDED METAL GATES FOR ADVANCED CMOS...

High performance CMOS device structure with mid-gap metal gate

Method and process to make multiple-threshold metal gates CMOS tech...

High performance CMOS device structure with mid-gap metal gate

High temperature processing compatible metal gate electrode for pFE...

Thermally stable polycrystal to single crystal electrical contact s...