Rina TANAKA

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device
- Patent number 12,051,744
- Issue date Jul 30, 2024
- Mitsubishi Electric Corporation
- Katsutoshi Sugawara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and power converter
- Patent number 11,894,428
- Issue date Feb 6, 2024
- Mitsubishi Electric Corporation
- Hideyuki Hatta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and method of manufacturing same
- Patent number 11,848,358
- Issue date Dec 19, 2023
- Mitsubishi Electric Corporation
- Rina Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device, power converter, method of ma...
- Patent number 11,637,184
- Issue date Apr 25, 2023
- Mitsubishi Electric Corporation
- Kohei Adachi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and power converter
- Patent number 11,271,084
- Issue date Mar 8, 2022
- Mitsubishi Electric Corporation
- Yutaka Fukui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and manufacturing method of same
- Patent number 11,251,299
- Issue date Feb 15, 2022
- Mitsubishi Electric Corporation
- Rina Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and power conversion device
- Patent number 11,158,704
- Issue date Oct 26, 2021
- Mitsubishi Electric Corporation
- Kohei Adachi
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Insulated gate silicon carbide semiconductor device and method for...
- Patent number 10,510,843
- Issue date Dec 17, 2019
- Mitsubishi Electric Corporation
- Yasuhiro Kagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 10,468,487
- Issue date Nov 5, 2019
- Mitsubishi Electric Corporation
- Katsutoshi Sugawara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a gate trench and an outside trench
- Patent number 10,453,951
- Issue date Oct 22, 2019
- Mitsubishi Electric Corporation
- Yutaka Fukui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device
- Patent number 10,347,724
- Issue date Jul 9, 2019
- Mitsubishi Electric Corporation
- Rina Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 10,312,233
- Issue date Jun 4, 2019
- Mitsubishi Electric Corporation
- Katsutoshi Sugawara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device
- Patent number 10,229,969
- Issue date Mar 12, 2019
- Mitsubishi Electric Corporation
- Yasuhiro Kagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device
- Patent number 10,199,457
- Issue date Feb 5, 2019
- Mitsubishi Electric Corporation
- Rina Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and method for manufacturing same
- Patent number 10,157,986
- Issue date Dec 18, 2018
- Mitsubishi Electric Corporation
- Rina Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device
- Patent number 9,972,676
- Issue date May 15, 2018
- Mitsubishi Electric Corporation
- Rina Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-carbide semiconductor device and manufacturing method thereof
- Patent number 9,954,072
- Issue date Apr 24, 2018
- Mitsubishi Electric Corporation
- Rina Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and manufacturing method for same
- Patent number 9,825,164
- Issue date Nov 21, 2017
- Mitsubishi Electric Corporation
- Yasuhiro Kagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and manufacturing method therefor
- Patent number 9,773,874
- Issue date Sep 26, 2017
- Mitsubishi Electric Corporation
- Nobuo Fujiwara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate silicon carbide semiconductor device and method for...
- Patent number 9,741,797
- Issue date Aug 22, 2017
- Mitsubishi Electric Corporation
- Yasuhiro Kagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 9,698,221
- Issue date Jul 4, 2017
- Mitsubishi Electric Corporation
- Katsutoshi Sugawara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and manufacturing method therefor
- Patent number 9,691,858
- Issue date Jun 27, 2017
- Mitsubishi Electric Corporation
- Nobuo Fujiwara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including well regions with different impurity...
- Patent number 9,496,344
- Issue date Nov 15, 2016
- Mitsubishi Electric Corporation
- Rina Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-carbide semiconductor device and method for manufacturing t...
- Patent number 9,425,261
- Issue date Aug 23, 2016
- Mitsubishi Electric Corporation
- Yutaka Fukui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-carbide semiconductor device and manufacturing method therefor
- Patent number 9,337,271
- Issue date May 10, 2016
- Mitsubishi Electric Corporation
- Yutaka Fukui
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE, SILIC...
- Publication number 20230290874
- Publication date Sep 14, 2023
- Mitsubishi Electric Corporation
- Motoru YOSHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, POWER CONVERSION APPARATUS, AND METHOD FOR PR...
- Publication number 20230215942
- Publication date Jul 6, 2023
- Mitsubishi Electric Corporation
- Rina TANAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE, POWER CONVERSION APPARATUS, A...
- Publication number 20220406897
- Publication date Dec 22, 2022
- Mitsubishi Electric Corporation
- Rina TANAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND POWER CONVERTER
- Publication number 20220149167
- Publication date May 12, 2022
- Mitsubishi Electric Corporation
- Yutaka FUKUI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND POWER CONVERTER
- Publication number 20220102503
- Publication date Mar 31, 2022
- Mitsubishi Electric Corporation
- Hideyuki HATTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
- Publication number 20220037474
- Publication date Feb 3, 2022
- Mitsubishi Electric Corporation
- Rina TANAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20220005947
- Publication date Jan 6, 2022
- Mitsubishi Electric Corporation
- Katsutoshi SUGAWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND POWER CONVERTER
- Publication number 20210288156
- Publication date Sep 16, 2021
- Mitsubishi Electric Corporation
- Yutaka FUKUI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SAME
- Publication number 20210043765
- Publication date Feb 11, 2021
- Mitsubishi Electric Corporation
- Rina TANAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE, POWER CONVERTER, METHOD OF MA...
- Publication number 20200194554
- Publication date Jun 18, 2020
- Mitsubishi Electric Corporation
- Kohei ADACHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE
- Publication number 20190206987
- Publication date Jul 4, 2019
- Mitsubishi Electric corporation
- Kohei ADACHI
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20180358429
- Publication date Dec 13, 2018
- MITSUBISHI ELECTRIC CORPORATION
- Rina TANAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE
- Publication number 20180358431
- Publication date Dec 13, 2018
- MITSUBISHI ELECTRIC CORPORATION
- Yasuhiro KAGAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20180315819
- Publication date Nov 1, 2018
- MITSUBISHI ELECTRIC CORPORATION
- Rina TANAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20180248008
- Publication date Aug 30, 2018
- MITSUBISHI ELECTRIC CORPORATION
- Katsutoshi SUGAWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20180076285
- Publication date Mar 15, 2018
- MITSUBISHI ELECTRIC CORPORATION
- Rina TANAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR...
- Publication number 20170309711
- Publication date Oct 26, 2017
- MITSUBISHI ELECTRIC CORPORATION
- Yasuhiro KAGAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20170301788
- Publication date Oct 19, 2017
- MITSUBISHI ELECTRIC CORPORATION
- Yutaka FUKUI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20170271323
- Publication date Sep 21, 2017
- MITSUBISHI ELECTRIC CORPORATION
- Katsutoshi SUGAWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20170053984
- Publication date Feb 23, 2017
- MITSUBISHI ELECTRIC CORPORATION
- Katsutoshi SUGAWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE
- Publication number 20160336391
- Publication date Nov 17, 2016
- MITSUBISHI ELECTRIC CORPORATION
- Rina TANAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20160211334
- Publication date Jul 21, 2016
- MITSUBISHI ELECTRIC CORPORATION
- Rina TANAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SAME
- Publication number 20160190307
- Publication date Jun 30, 2016
- Mitsubishi Electric Corporation
- Yasuhiro KAGAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON-CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING T...
- Publication number 20160071937
- Publication date Mar 10, 2016
- MITSUBISHI ELECTRIC CORPORATION
- Yutaka FUKUI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR...
- Publication number 20150357415
- Publication date Dec 10, 2015
- MITSUBISHI ELECTRIC CORPORATION
- Yasuhiro KAGAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON-CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
- Publication number 20150333126
- Publication date Nov 19, 2015
- MITSUBISHI ELECTRIC CORPORATION
- Yutaka FUKUI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
- Publication number 20150287789
- Publication date Oct 8, 2015
- Mitsubishi Electric Corporation
- Nobuo Fujiwara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON-CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20150236119
- Publication date Aug 20, 2015
- Mitsubishi Electric Corporation
- Rina Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20150048384
- Publication date Feb 19, 2015
- MITSUBISHI ELECTRIC CORPORATION
- Rina Tanaka
- H01 - BASIC ELECTRIC ELEMENTS

Rina TANAKA

Person

Patents Grantslast 30 patents

Semiconductor device

Silicon carbide semiconductor device and power converter

Silicon carbide semiconductor device and method of manufacturing same

Silicon carbide semiconductor device, power converter, method of ma...

Semiconductor device and power converter

Silicon carbide semiconductor device and manufacturing method of same

Semiconductor device and power conversion device

Insulated gate silicon carbide semiconductor device and method for...

Semiconductor device

Semiconductor device having a gate trench and an outside trench

Silicon carbide semiconductor device

Semiconductor device

Power semiconductor device

Silicon carbide semiconductor device

Silicon carbide semiconductor device and method for manufacturing same

Silicon carbide semiconductor device

Silicon-carbide semiconductor device and manufacturing method thereof

Silicon carbide semiconductor device and manufacturing method for same

Silicon carbide semiconductor device and manufacturing method therefor

Insulated gate silicon carbide semiconductor device and method for...

Semiconductor device

Silicon carbide semiconductor device and manufacturing method therefor

Semiconductor device including well regions with different impurity...

Silicon-carbide semiconductor device and method for manufacturing t...

Silicon-carbide semiconductor device and manufacturing method therefor

Patents Applicationslast 30 patents

METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE, SILIC...

SEMICONDUCTOR DEVICE, POWER CONVERSION APPARATUS, AND METHOD FOR PR...

SILICON CARBIDE SEMICONDUCTOR DEVICE, POWER CONVERSION APPARATUS, A...

SEMICONDUCTOR DEVICE AND POWER CONVERTER

SILICON CARBIDE SEMICONDUCTOR DEVICE AND POWER CONVERTER

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND POWER CONVERTER

SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SAME

SILICON CARBIDE SEMICONDUCTOR DEVICE, POWER CONVERTER, METHOD OF MA...

SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE

SILICON CARBIDE SEMICONDUCTOR DEVICE

POWER SEMICONDUCTOR DEVICE

SILICON CARBIDE SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

INSULATED GATE SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SILICON CARBIDE SEMICONDUCTOR DEVICE

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SAME

SILICON-CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING T...

INSULATED GATE SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR...

SILICON-CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

SILICON-CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE