Robert A. Huertas

Person

Hollister, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Vertical oxide-oxide interface for forming-free, low power and low...
- Patent number 9,018,037
- Issue date Apr 28, 2015
- Intermolecular, Inc.
- Federico Nardi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interfacial oxide used as switching layer in a nonvolatile resistiv...
- Patent number 8,791,445
- Issue date Jul 29, 2014
- Intermolecular, Inc.
- Randall Higuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gap-filling with uniform properties
- Patent number 8,415,256
- Issue date Apr 9, 2013
- Alexander Nickel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cu annealing for improved data retention in flash memory devices
- Patent number 8,026,169
- Issue date Sep 27, 2011
- Advanced Micro Devices, Inc.
- Lu You
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gap-filling with uniform properties
- Patent number 7,884,030
- Issue date Feb 8, 2011
- Advanced Micro Devices, Inc. and Spansion LLC
- Alexander Nickel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with copper interconnects and composite silic...
- Patent number 7,534,732
- Issue date May 19, 2009
- Spansion LLC
- Minh Van Ngo
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Interlayer dielectric for charge loss improvement
- Patent number 7,300,886
- Issue date Nov 27, 2007
- Spansion LLC
- Minh Van Ngo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Undoped oxide liner/BPSG for improved data retention
- Patent number 7,023,046
- Issue date Apr 4, 2006
- Advanced Micro Devices, Inc.
- Minh Van Ngo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
UV-blocking layer for reducing UV-induced charging of SONOS dual-bi...
- Patent number 7,018,896
- Issue date Mar 28, 2006
- Advanced Micro Devices, Inc.
- Minh V. Ngo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of treating inlaid copper for improved capping layer adhesio...
- Patent number 6,875,694
- Issue date Apr 5, 2005
- Advanced Micro Devices, Inc.
- Minh Van Ngo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming SiC capped copper interconnects with reduced hill...
- Patent number 6,818,557
- Issue date Nov 16, 2004
- Advanced Micro Devices, Inc.
- Minh Van Ngo
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Multi-stage, low deposition rate PECVD oxide
- Patent number 6,809,043
- Issue date Oct 26, 2004
- Advanced Micro Devices, Inc.
- Minh Van Ngo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
UV-blocking layer for reducing UV-induced charging of SONOS dual-bi...
- Patent number 6,774,432
- Issue date Aug 10, 2004
- Advanced Micro Devices, Inc.
- Minh V. Ngo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra low deposition rate PECVD silicon nitride
- Patent number 6,686,232
- Issue date Feb 3, 2004
- Advanced Micro Devices, Inc.
- Minh Van Ngo
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Nitrogen-plasma treatment for reduced nickel silicide bridging
- Patent number 6,661,067
- Issue date Dec 9, 2003
- Advanced Micro Devices, Inc.
- Minh Van Ngo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Void-free interlayer dielectric (ILD0) for 0.18-micron flash memory...
- Patent number 6,627,973
- Issue date Sep 30, 2003
- Advanced Micro Devices, Inc.
- Minh Van Ngo
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of forming copper interconnect capping layers with improved...
- Patent number 6,596,631
- Issue date Jul 22, 2003
- Advanced Micro Devices, Inc.
- Minh Van Ngo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming low resistance vias
- Patent number 6,562,416
- Issue date May 13, 2003
- Advanced Micro Devices, Inc.
- Minh Van Ngo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
H2-or H2/N2-plasma treatment to prevent organic ILD degradation
- Patent number 6,528,432
- Issue date Mar 4, 2003
- Advanced Micro Devices, Inc.
- Minh Van Ngo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HDP treatment for reduced nickel silicide bridging
- Patent number 6,521,529
- Issue date Feb 18, 2003
- Advanced Micro Devices, Inc.
- Minh Van Ngo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a void-free interlayer dielectric (ILD0) for 0.18...
- Patent number 6,489,253
- Issue date Dec 3, 2002
- Advanced Micro Devices, Inc.
- Minh Van Ngo
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
HDP deposition hillock suppression method in integrated circuits
- Patent number 6,482,755
- Issue date Nov 19, 2002
- Advanced Micro Devices, Inc.
- Minh Van Ngo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitrogen-plasma treatment for reduced nickel silicide bridging
- Patent number 6,465,349
- Issue date Oct 15, 2002
- Advanced Micro Devices, Ins.
- Minh Van Ngo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low dielectric constant etch stop layers in integrated circuit inte...
- Patent number 6,388,330
- Issue date May 14, 2002
- Advanced Micro Devices, Inc.
- Minh Van Ngo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
NH3/N2-plasma treatment for reduced nickel silicide bridging
- Patent number 6,383,880
- Issue date May 7, 2002
- Advanced Micro Devices, Inc.
- Minh Van Ngo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of improving adhesion of capping layers to cooper interconnects
- Patent number 6,383,925
- Issue date May 7, 2002
- Advanced Micro Devices, Inc.
- Minh Van Ngo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low temperature hillock suppression method in integrated circuit in...
- Patent number 6,348,410
- Issue date Feb 19, 2002
- Advanced Micro Devices, Inc.
- Minh Van Ngo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming PECVD nitride with a very low deposition rate
- Patent number 6,235,654
- Issue date May 22, 2001
- Advanced Micro Devices, Inc.
- Minh Van Ngo
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Process for forming PECVD undoped oxide with a super low deposition...
- Patent number 6,221,793
- Issue date Apr 24, 2001
- Advanced Micro Devices, Inc.
- Minh Van Ngo
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of reducing metal voidings in 0.25 .mu.m AL interconnect
- Patent number 6,143,672
- Issue date Nov 7, 2000
- Advanced Micro Devices, Inc.
- Minh Van Ngo
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
Feature Size Reduction in Semiconductor Devices by Selective Wet Et...
- Publication number 20150170923
- Publication date Jun 18, 2015
- Intermolecular, Inc.
- Federico Nardi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods and Vehicles for High Productivity Combinatorial Testing of...
- Publication number 20140154859
- Publication date Jun 5, 2014
- INTERMOLECULAR INC.
- Vidyut Gopal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERFACIAL OXIDE USED AS SWITCHING LAYER IN A NONVOLATILE RESISTIV...
- Publication number 20130228735
- Publication date Sep 5, 2013
- Intermolecular, Inc.
- Randall Higuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Cu annealing for improved data retention in flash memory devices
- Publication number 20080108193
- Publication date May 8, 2008
- Spansion LLC
- Lu You
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Conformal liner for gap-filling
- Publication number 20080096364
- Publication date Apr 24, 2008
- Spansion LLC
- Erik Wilson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Deposition of hard-mask with minimized hillocks and bubbles
- Publication number 20060046502
- Publication date Mar 2, 2006
- Minh Van Ngo
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Undoped oxide liner/BPSG for improved data retention
- Publication number 20050006693
- Publication date Jan 13, 2005
- Advanced Micro Devices, Inc.
- Minh Van Ngo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UV-blocking layer for reducing UV-induced charging of SONOS dual-bi...
- Publication number 20040191989
- Publication date Sep 30, 2004
- Minh V. Ngo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UV-BLOCKING LAYER FOR REDUCING UV-INDUCED CHARGING OF SONOS DUAL-BI...
- Publication number 20040151025
- Publication date Aug 5, 2004
- Minh V. Ngo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming low resistance vias
- Publication number 20020162736
- Publication date Nov 7, 2002
- Advanced Micro Devices, Inc.
- Minh Van Ngo
- H01 - BASIC ELECTRIC ELEMENTS

Robert A. Huertas

Person

Patents Grantslast 30 patents

Vertical oxide-oxide interface for forming-free, low power and low...

Interfacial oxide used as switching layer in a nonvolatile resistiv...

Gap-filling with uniform properties

Cu annealing for improved data retention in flash memory devices

Gap-filling with uniform properties

Semiconductor devices with copper interconnects and composite silic...

Interlayer dielectric for charge loss improvement

Undoped oxide liner/BPSG for improved data retention

UV-blocking layer for reducing UV-induced charging of SONOS dual-bi...

Method of treating inlaid copper for improved capping layer adhesio...

Method of forming SiC capped copper interconnects with reduced hill...

Multi-stage, low deposition rate PECVD oxide

UV-blocking layer for reducing UV-induced charging of SONOS dual-bi...

Ultra low deposition rate PECVD silicon nitride

Nitrogen-plasma treatment for reduced nickel silicide bridging

Void-free interlayer dielectric (ILD0) for 0.18-micron flash memory...

Method of forming copper interconnect capping layers with improved...

Method of forming low resistance vias

H2-or H2/N2-plasma treatment to prevent organic ILD degradation

HDP treatment for reduced nickel silicide bridging

Method of forming a void-free interlayer dielectric (ILD0) for 0.18...

HDP deposition hillock suppression method in integrated circuits

Nitrogen-plasma treatment for reduced nickel silicide bridging

Low dielectric constant etch stop layers in integrated circuit inte...

NH3/N2-plasma treatment for reduced nickel silicide bridging

Method of improving adhesion of capping layers to cooper interconnects

Low temperature hillock suppression method in integrated circuit in...

Process for forming PECVD nitride with a very low deposition rate

Process for forming PECVD undoped oxide with a super low deposition...

Method of reducing metal voidings in 0.25 .mu.m AL interconnect

Patents Applicationslast 30 patents

Feature Size Reduction in Semiconductor Devices by Selective Wet Et...

Methods and Vehicles for High Productivity Combinatorial Testing of...

INTERFACIAL OXIDE USED AS SWITCHING LAYER IN A NONVOLATILE RESISTIV...

Cu annealing for improved data retention in flash memory devices

Conformal liner for gap-filling

Deposition of hard-mask with minimized hillocks and bubbles

Undoped oxide liner/BPSG for improved data retention

UV-blocking layer for reducing UV-induced charging of SONOS dual-bi...

UV-BLOCKING LAYER FOR REDUCING UV-INDUCED CHARGING OF SONOS DUAL-BI...

Method of forming low resistance vias