Robert B. Ogle

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Varied silicon richness silicon nitride formation
- Patent number 11,069,789
- Issue date Jul 20, 2021
- MONTEREY RESEARCH, LLC
- Yi Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Varied silicon richness silicon nitride formation
- Patent number 10,644,126
- Issue date May 5, 2020
- MONTEREY RESEARCH, LLC
- Yi Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Varied silicon richness silicon nitride formation
- Patent number 9,012,333
- Issue date Apr 21, 2015
- Spansion LLC
- Yi Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell system using silicon-rich nitride
- Patent number 8,803,216
- Issue date Aug 12, 2014
- Spansion, LLC
- Meng Ding
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating memory cells having fin structures with smo...
- Patent number 8,563,441
- Issue date Oct 22, 2013
- Spansion LLC
- Yi Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory device with improved erase speed
- Patent number 7,863,128
- Issue date Jan 4, 2011
- Spansion LLC
- Joong Jeon
- G11 - INFORMATION STORAGE
Information Patent Grant
Zero interface polysilicon to polysilicon gate for flash memory
- Patent number 7,863,175
- Issue date Jan 4, 2011
- Spansion LLC
- Robert Bertram Ogle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hetero-structure variable silicon rich nitride for multiple level m...
- Patent number 7,602,067
- Issue date Oct 13, 2009
- Spansion LLC
- Yi Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming memory array bitlines comprising epitaxially gro...
- Patent number 7,354,826
- Issue date Apr 8, 2008
- Spansion LLC
- Takashi Orimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Scanning laser thermal annealing
- Patent number 7,351,638
- Issue date Apr 1, 2008
- Advanced Micro Devices, Inc.
- Cyrus E. Tabery
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Localized halo implant region formed using tilt pre-amorphization i...
- Patent number 7,211,489
- Issue date May 1, 2007
- Advanced Micro Devices, Inc.
- Qi Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
End-of-range defect minimization in semiconductor device
- Patent number 7,091,097
- Issue date Aug 15, 2006
- Advanced Micro Devices, Inc.
- Eric N. Paton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laser thermal annealing methods for flash memory devices
- Patent number 7,001,814
- Issue date Feb 21, 2006
- Advanced Micro Devices, Inc.
- Arvind Halliyal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-temperature post-dopant activation process
- Patent number 6,902,966
- Issue date Jun 7, 2005
- Advanced Micro Devices, Inc.
- Bin Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a memory cell with polished insulator layer
- Patent number 6,867,097
- Issue date Mar 15, 2005
- Advanced Micro Devices, Inc.
- Mark T. Ramsbey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polysilicon tilting to prevent geometry effects during laser therma...
- Patent number 6,867,080
- Issue date Mar 15, 2005
- Advanced Micro Devices, Inc.
- Eric N. Paton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxidizing pretreatment of ONO layer for flash memory
- Patent number 6,858,496
- Issue date Feb 22, 2005
- Advanced Micro Devices, Inc.
- Robert B. Ogle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Preparation of composite high-K/standard-K dielectrics for semicond...
- Patent number 6,849,925
- Issue date Feb 1, 2005
- Advanced Micro Devices, Inc.
- Arvind Halliyal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Post silicide laser thermal annealing to avoid dopant deactivation
- Patent number 6,825,115
- Issue date Nov 30, 2004
- Advanced Micro Devices, Inc.
- Qi Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced dopant deactivation of source/drain extensions using laser...
- Patent number 6,812,106
- Issue date Nov 2, 2004
- Advanced Micro Devices, Inc.
- Qi Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Use of high-K dielectric material in modified ONO structure for sem...
- Patent number 6,803,272
- Issue date Oct 12, 2004
- Advanced Micro Devices, Inc.
- Arvind Halliyal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual-purpose anti-reflective coating and spacer for flash memory an...
- Patent number 6,798,002
- Issue date Sep 28, 2004
- Advanced Micro Devices, Inc.
- Robert B. Ogle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laser thermal oxidation to form ultra-thin gate oxide
- Patent number 6,780,789
- Issue date Aug 24, 2004
- Advanced Micro Devices, Inc.
- Bin Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low nisi/si interface contact resistance with preamorphizing and la...
- Patent number 6,746,944
- Issue date Jun 8, 2004
- Advanced Micro Devices, Inc.
- Qi Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabrication SOI devices with accurately defined monocryst...
- Patent number 6,743,689
- Issue date Jun 1, 2004
- Advanced Micro Devices, Inc.
- Eric N. Paton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming flash memory having pre-interpoly dielectric trea...
- Patent number 6,716,702
- Issue date Apr 6, 2004
- Advanced Micro Devices, Inc.
- Robert B. Ogle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for treating ONO dielectric film of a floating gate memory...
- Patent number 6,709,927
- Issue date Mar 23, 2004
- Advanced Micro Devices, Inc.
- Robert Bertram Ogle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multilayer anti-reflective coating for semiconductor lithography
- Patent number 6,689,682
- Issue date Feb 10, 2004
- Advanced Micro Devices, Inc.
- Robert B. Ogle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of deep amorphous region to separate junction from end-of...
- Patent number 6,680,250
- Issue date Jan 20, 2004
- Advanced Micro Devices, Inc.
- Eric N. Paton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Use of high-k dielectric materials in modified ONO structure for se...
- Patent number 6,674,138
- Issue date Jan 6, 2004
- Advanced Micro Devices, Inc.
- Arvind Halliyal
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
VARIED SILICON RICHNESS SILICON NITRIDE FORMATION
- Publication number 20220005933
- Publication date Jan 6, 2022
- MONTEREY RESEARCH, LLC
- Yi Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARIED SILICON RICHNESS SILICON NITRIDE FORMATION
- Publication number 20200365709
- Publication date Nov 19, 2020
- MONTEREY RESEARCH, LLC
- Yi Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARIED SILICON RICHNESS SILICON NITRIDE FORMATION
- Publication number 20180006132
- Publication date Jan 4, 2018
- CYPRESS SEMICONDUCTOR CORPORATION
- Yi Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARIED SILICON RICHNESS SILICON NITRIDE FORMATION
- Publication number 20150194499
- Publication date Jul 9, 2015
- SPANSION LLC
- Yi MA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARIED SILICON RICHNESS SILICON NITRIDE FORMATION
- Publication number 20110057248
- Publication date Mar 10, 2011
- Yi MA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FABRICATING MEMORY CELLS HAVING FIN STRUCTURES WITH SMO...
- Publication number 20090269918
- Publication date Oct 29, 2009
- Yi Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETERO-STRUCTURE VARIABLE SILICON RICHNESS NITRIDE FOR MLC FLASH ME...
- Publication number 20090152617
- Publication date Jun 18, 2009
- SPANSION LLC
- Yi Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ZERO INTERFACE POLYSILICON TO POLYSILICON GATE FOR SEMICONDUCTOR DE...
- Publication number 20080150028
- Publication date Jun 26, 2008
- Advanced Micro Devices, Inc.
- Robert Bertram Ogle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Flash memory cell structure for increased program speed and erase s...
- Publication number 20080079061
- Publication date Apr 3, 2008
- Advanced Micro Devices, Inc.
- Meng Ding
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low-temperature post-dopant activation process
- Publication number 20030082880
- Publication date May 1, 2003
- Advanced Micro Devices, Inc.
- Bin Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming flash memory having pre-interpoly dielectric trea...
- Publication number 20030071304
- Publication date Apr 17, 2003
- Robert B. Ogle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Void reduction and increased throughput in trench fill processes
- Publication number 20020081817
- Publication date Jun 27, 2002
- Jayendra Bhakta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL METHOD FOR THE FORMATION OF VARIOUS OXIDE THICKNESSES ON A NI...
- Publication number 20010014519
- Publication date Aug 16, 2001
- ROBERT B. OGLE
- H01 - BASIC ELECTRIC ELEMENTS

Robert B. Ogle

Person

Patents Grantslast 30 patents

Varied silicon richness silicon nitride formation

Varied silicon richness silicon nitride formation

Varied silicon richness silicon nitride formation

Memory cell system using silicon-rich nitride

Methods for fabricating memory cells having fin structures with smo...

Non-volatile memory device with improved erase speed

Zero interface polysilicon to polysilicon gate for flash memory

Hetero-structure variable silicon rich nitride for multiple level m...

Method for forming memory array bitlines comprising epitaxially gro...

Scanning laser thermal annealing

Localized halo implant region formed using tilt pre-amorphization i...

End-of-range defect minimization in semiconductor device

Laser thermal annealing methods for flash memory devices

Low-temperature post-dopant activation process

Method of making a memory cell with polished insulator layer

Polysilicon tilting to prevent geometry effects during laser therma...

Oxidizing pretreatment of ONO layer for flash memory

Preparation of composite high-K/standard-K dielectrics for semicond...

Post silicide laser thermal annealing to avoid dopant deactivation

Reduced dopant deactivation of source/drain extensions using laser...

Use of high-K dielectric material in modified ONO structure for sem...

Dual-purpose anti-reflective coating and spacer for flash memory an...

Laser thermal oxidation to form ultra-thin gate oxide

Low nisi/si interface contact resistance with preamorphizing and la...

Method of fabrication SOI devices with accurately defined monocryst...

Method of forming flash memory having pre-interpoly dielectric trea...

Process for treating ONO dielectric film of a floating gate memory...

Multilayer anti-reflective coating for semiconductor lithography

Formation of deep amorphous region to separate junction from end-of...

Use of high-k dielectric materials in modified ONO structure for se...

Patents Applicationslast 30 patents

VARIED SILICON RICHNESS SILICON NITRIDE FORMATION

VARIED SILICON RICHNESS SILICON NITRIDE FORMATION

VARIED SILICON RICHNESS SILICON NITRIDE FORMATION

VARIED SILICON RICHNESS SILICON NITRIDE FORMATION

VARIED SILICON RICHNESS SILICON NITRIDE FORMATION

METHODS FOR FABRICATING MEMORY CELLS HAVING FIN STRUCTURES WITH SMO...

HETERO-STRUCTURE VARIABLE SILICON RICHNESS NITRIDE FOR MLC FLASH ME...

ZERO INTERFACE POLYSILICON TO POLYSILICON GATE FOR SEMICONDUCTOR DE...

Flash memory cell structure for increased program speed and erase s...

Low-temperature post-dopant activation process

Method of forming flash memory having pre-interpoly dielectric trea...

Void reduction and increased throughput in trench fill processes

NOVEL METHOD FOR THE FORMATION OF VARIOUS OXIDE THICKNESSES ON A NI...