Robert H. Dennard

Person

Croton-on-Hudson, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Fully-depleted CMOS transistors with u-shaped channel
- Patent number 11,145,758
- Issue date Oct 12, 2021
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for improving access resistance in U-channel E...
- Patent number 10,439,046
- Issue date Oct 8, 2019
- International Business Machines Corporation
- Robert H. Dennard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of lateral oxidation of nFET and pFET high-K gate stacks
- Patent number 10,373,835
- Issue date Aug 6, 2019
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fully-depleted CMOS transistors with U-shaped channel
- Patent number 10,326,019
- Issue date Jun 18, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with U-shaped channel and S/D epitaxial cladding extending u...
- Patent number 10,121,786
- Issue date Nov 6, 2018
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of lateral oxidation of NFET and PFET high-k gate stacks
- Patent number 9,941,128
- Issue date Apr 10, 2018
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including dual-layer source/drain region
- Patent number 9,793,400
- Issue date Oct 17, 2017
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including dual-layer source/drain region
- Patent number 9,748,336
- Issue date Aug 29, 2017
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fully-depleted SOI MOSFET with U-shaped channel
- Patent number 9,748,348
- Issue date Aug 29, 2017
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for adjusting threshold voltage of the array o...
- Patent number 9,666,267
- Issue date May 30, 2017
- International Business Machines Corporation
- Jin Cai
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods of forming FINFETs with locally thinned channels from fins...
- Patent number 9,627,378
- Issue date Apr 18, 2017
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fully-depleted SOI MOSFET with U-shaped channel
- Patent number 9,564,500
- Issue date Feb 7, 2017
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for adjusting threshold voltage of the array o...
- Patent number 9,484,464
- Issue date Nov 1, 2016
- International Business Machines Corporation
- Jin Cai
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of lateral oxidation of NFET and PFET high-K gate stacks
- Patent number 9,466,492
- Issue date Oct 11, 2016
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory device employing semiconductor nanoparticles
- Patent number 9,425,080
- Issue date Aug 23, 2016
- GLOBALFOUNDRIES Inc.
- Kangguo Cheng
- B82 - NANO-TECHNOLOGY
Information Patent Grant
SOI CMOS structure having programmable floating backplate
- Patent number 9,379,028
- Issue date Jun 28, 2016
- GLOBALFOUNDRIES Inc.
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory device employing semiconductor nanoparticles
- Patent number 8,994,006
- Issue date Mar 31, 2015
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gated diode memory cells
- Patent number 8,947,927
- Issue date Feb 3, 2015
- International Business Machines Corporation
- Wing K. Luk
- G11 - INFORMATION STORAGE
Information Patent Grant
Amplifiers using gated diodes
- Patent number 8,941,412
- Issue date Jan 27, 2015
- International Business Machines Corporation
- Wing K. Luk
- G11 - INFORMATION STORAGE
Information Patent Grant
Low cost fabrication of double box back gate silicon-on-insulator w...
- Patent number 8,877,606
- Issue date Nov 4, 2014
- International Business Machines Corporation
- Robert H. Dennard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for adjusting threshold voltage of the array o...
- Patent number 8,859,302
- Issue date Oct 14, 2014
- International Business Machines Corporation
- Ali Khakifirooz
- G11 - INFORMATION STORAGE
Information Patent Grant
Complementary bipolar inverter
- Patent number 8,847,348
- Issue date Sep 30, 2014
- International Business Machines Corporation
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bulk finFET with super steep retrograde well
- Patent number 8,815,684
- Issue date Aug 26, 2014
- International Business Machines Corporation
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Voltage conversion and integrated circuits with stacked voltage dom...
- Patent number 8,754,672
- Issue date Jun 17, 2014
- International Business Machines Corporation
- Robert H. Dennard
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Radiation hardened FinFET
- Patent number 8,735,990
- Issue date May 27, 2014
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gated diode memory cells
- Patent number 8,675,403
- Issue date Mar 18, 2014
- International Business Machines Corporation
- Wing K. Luk
- G11 - INFORMATION STORAGE
Information Patent Grant
Low voltage signaling
- Patent number 8,629,705
- Issue date Jan 14, 2014
- International Business Machines Corporation
- Leland Chang
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Variable voltage CMOS off-chip driver and receiver circuits
- Patent number 8,604,828
- Issue date Dec 10, 2013
- International Business Machines Corporation
- Harry Randall Bickford
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Self-aligned dual depth isolation and method of fabrication
- Patent number 8,587,086
- Issue date Nov 19, 2013
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid double box back gate silicon-on-insulator wafers with enhanc...
- Patent number 8,587,063
- Issue date Nov 19, 2013
- International Business Machines Corporation
- Robert H. Dennard
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
STRUCTURE AND METHOD FOR IMPROVING ACCESS RESISTANCE IN U-CHANNEL E...
- Publication number 20190288091
- Publication date Sep 19, 2019
- International Business Machines Corporation
- Robert H. Dennard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IMPROVED FULLY-DEPLETED CMOS TRANSISTORS WITH U-SHAPED CHANNEL
- Publication number 20190267490
- Publication date Aug 29, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF LATERAL OXIDATION OF NFET AND PFET HIGH-K GATE STACKS
- Publication number 20190267243
- Publication date Aug 29, 2019
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF LATERAL OXIDATION OF NFET AND PFET HIGH-K GATE STACKS
- Publication number 20180174847
- Publication date Jun 21, 2018
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FULLY-DEPLETED CMOS TRANSISTORS WITH U-SHAPED CHANNEL
- Publication number 20180090614
- Publication date Mar 29, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET with U-Shaped Channel
- Publication number 20170194325
- Publication date Jul 6, 2017
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fully-Depleted SOI MOSFET with U-Shaped Channel
- Publication number 20170117373
- Publication date Apr 27, 2017
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING DUAL-LAYER SOURCE/DRAIN REGION
- Publication number 20170104101
- Publication date Apr 13, 2017
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING DUAL-LAYER SOURCE/DRAIN REGION
- Publication number 20170104065
- Publication date Apr 13, 2017
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET with U-Shaped Channel
- Publication number 20170005090
- Publication date Jan 5, 2017
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fully-Depleted SOI MOSFET with U-Shaped Channel
- Publication number 20170005173
- Publication date Jan 5, 2017
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR ADJUSTING THRESHOLD VOLTAGE OF THE ARRAY O...
- Publication number 20170004873
- Publication date Jan 5, 2017
- International Business Machines Corporation
- Jin Cai
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF LATERAL OXIDATION OF NFET AND PFET HIGH-K GATE STACKS
- Publication number 20160365252
- Publication date Dec 15, 2016
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL OXIDATION OF NFET HIGH-K GATE STACKS
- Publication number 20150318177
- Publication date Nov 5, 2015
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY DEVICE EMPLOYING SEMICONDUCTOR NANOPARTICLES
- Publication number 20150132896
- Publication date May 14, 2015
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD FOR ADJUSTING THRESHOLD VOLTAGE OF THE ARRAY O...
- Publication number 20140362638
- Publication date Dec 11, 2014
- International Business Machines Corporation
- Jin Cai
- G11 - INFORMATION STORAGE
Information Patent Application
BULK FINFET WITH SUPER STEEP RETROGRADE WELL
- Publication number 20140159162
- Publication date Jun 12, 2014
- International Business Machines Corporation
- JIN CAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BULK FINFET WITH SUPER STEEP RETROGRADE WELL
- Publication number 20140159163
- Publication date Jun 12, 2014
- International Business Machines Corporation
- JIN CAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY DEVICE EMPLOYING SEMICONDUCTOR NANOPARTICLES
- Publication number 20140091281
- Publication date Apr 3, 2014
- International Business Machines Corporation
- Kangguo Cheng
- B82 - NANO-TECHNOLOGY
Information Patent Application
COMPLEMENTARY BIPOLAR INVERTER
- Publication number 20140008758
- Publication date Jan 9, 2014
- International Business Machines Corporation
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI STRUCTURES INCLUDING A BURIED BORON NITRIDE DIELECTRIC
- Publication number 20130196483
- Publication date Aug 1, 2013
- International Business Machines Corporation
- Robert H. Dennard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI STRUCTURES INCLUDING A BURIED BORON NITRIDE DIELECTRIC
- Publication number 20130193445
- Publication date Aug 1, 2013
- International Business Machines Corporation
- Robert H. Dennard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AMPLIFIERS USING GATED DIODES
- Publication number 20130057347
- Publication date Mar 7, 2013
- International Business Machines Corporation
- Wing K. Luk
- G11 - INFORMATION STORAGE
Information Patent Application
SOI CMOS STRUCTURE HAVING PROGRAMMABLE FLOATING BACKPLATE
- Publication number 20130015912
- Publication date Jan 17, 2013
- International Business Machines Corporaton
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETSOI CMOS With Back Gates
- Publication number 20130005095
- Publication date Jan 3, 2013
- International Business Machines Corporation
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-Aligned Dual Depth Isolation and Method of Fabrication
- Publication number 20120319232
- Publication date Dec 20, 2012
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPLEMENTARY BIPOLAR INVERTER
- Publication number 20120313216
- Publication date Dec 13, 2012
- International Business Machines Corporation
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE FOR CMOS ETSOI WITH MULTIPLE THRESHOLD VOLTAGES AND ACTIV...
- Publication number 20120299080
- Publication date Nov 29, 2012
- International Business Machines Corporation
- Robert H. Dennard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETSOI CMOS with Back Gates
- Publication number 20120299105
- Publication date Nov 29, 2012
- International Business Machines Corporation
- Jin Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATED DIODE MEMORY CELLS
- Publication number 20120300544
- Publication date Nov 29, 2012
- International Business Machines Corporation
- Wing K. Luk
- G11 - INFORMATION STORAGE

Robert H. Dennard

Person

Patents Grantslast 30 patents

Fully-depleted CMOS transistors with u-shaped channel

Structure and method for improving access resistance in U-channel E...

Method of lateral oxidation of nFET and pFET high-K gate stacks

Fully-depleted CMOS transistors with U-shaped channel

FinFET with U-shaped channel and S/D epitaxial cladding extending u...

Method of lateral oxidation of NFET and PFET high-k gate stacks

Semiconductor device including dual-layer source/drain region

Semiconductor device including dual-layer source/drain region

Fully-depleted SOI MOSFET with U-shaped channel

Structure and method for adjusting threshold voltage of the array o...

Methods of forming FINFETs with locally thinned channels from fins...

Fully-depleted SOI MOSFET with U-shaped channel

Structure and method for adjusting threshold voltage of the array o...

Method of lateral oxidation of NFET and PFET high-K gate stacks

Non-volatile memory device employing semiconductor nanoparticles

SOI CMOS structure having programmable floating backplate

Non-volatile memory device employing semiconductor nanoparticles

Gated diode memory cells

Amplifiers using gated diodes

Low cost fabrication of double box back gate silicon-on-insulator w...

Structure and method for adjusting threshold voltage of the array o...

Complementary bipolar inverter

Bulk finFET with super steep retrograde well

Voltage conversion and integrated circuits with stacked voltage dom...

Radiation hardened FinFET

Gated diode memory cells

Low voltage signaling

Variable voltage CMOS off-chip driver and receiver circuits

Self-aligned dual depth isolation and method of fabrication

Hybrid double box back gate silicon-on-insulator wafers with enhanc...

Patents Applicationslast 30 patents

STRUCTURE AND METHOD FOR IMPROVING ACCESS RESISTANCE IN U-CHANNEL E...

IMPROVED FULLY-DEPLETED CMOS TRANSISTORS WITH U-SHAPED CHANNEL

METHOD OF LATERAL OXIDATION OF NFET AND PFET HIGH-K GATE STACKS

METHOD OF LATERAL OXIDATION OF NFET AND PFET HIGH-K GATE STACKS

FULLY-DEPLETED CMOS TRANSISTORS WITH U-SHAPED CHANNEL

FINFET with U-Shaped Channel

Fully-Depleted SOI MOSFET with U-Shaped Channel

SEMICONDUCTOR DEVICE INCLUDING DUAL-LAYER SOURCE/DRAIN REGION

SEMICONDUCTOR DEVICE INCLUDING DUAL-LAYER SOURCE/DRAIN REGION

FINFET with U-Shaped Channel

Fully-Depleted SOI MOSFET with U-Shaped Channel

STRUCTURE AND METHOD FOR ADJUSTING THRESHOLD VOLTAGE OF THE ARRAY O...

METHOD OF LATERAL OXIDATION OF NFET AND PFET HIGH-K GATE STACKS

LATERAL OXIDATION OF NFET HIGH-K GATE STACKS

NON-VOLATILE MEMORY DEVICE EMPLOYING SEMICONDUCTOR NANOPARTICLES

STRUCTURE AND METHOD FOR ADJUSTING THRESHOLD VOLTAGE OF THE ARRAY O...

BULK FINFET WITH SUPER STEEP RETROGRADE WELL

BULK FINFET WITH SUPER STEEP RETROGRADE WELL

NON-VOLATILE MEMORY DEVICE EMPLOYING SEMICONDUCTOR NANOPARTICLES

COMPLEMENTARY BIPOLAR INVERTER

SOI STRUCTURES INCLUDING A BURIED BORON NITRIDE DIELECTRIC

SOI STRUCTURES INCLUDING A BURIED BORON NITRIDE DIELECTRIC

AMPLIFIERS USING GATED DIODES

SOI CMOS STRUCTURE HAVING PROGRAMMABLE FLOATING BACKPLATE

ETSOI CMOS With Back Gates

Self-Aligned Dual Depth Isolation and Method of Fabrication

COMPLEMENTARY BIPOLAR INVERTER

STRUCTURE FOR CMOS ETSOI WITH MULTIPLE THRESHOLD VOLTAGES AND ACTIV...

ETSOI CMOS with Back Gates

GATED DIODE MEMORY CELLS