Robert H. Havemann

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Nanoparticle cap layer
- Patent number 8,039,379
- Issue date Oct 18, 2011
- Novellus Systems, Inc.
- Glenn Alers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanoparticle cap layer
- Patent number 7,994,640
- Issue date Aug 9, 2011
- Novellus Systems, Inc.
- Glenn Alers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit having a doped porous dielectric and method of m...
- Patent number 7,368,401
- Issue date May 6, 2008
- Texas Instruments Incorporated
- Robert H. Havemann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit having a doped porous dielectric and method of m...
- Patent number 6,753,563
- Issue date Jun 22, 2004
- Texas Instruments Incorporated
- Robert H. Havemann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming a fuse in a semiconductor device
- Patent number 6,677,188
- Issue date Jan 13, 2004
- Texas Instruments Incorporated
- Robert H. Havemann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low pressure, low temperature, semiconductor gap filling process
- Patent number 6,589,865
- Issue date Jul 8, 2003
- Texas Instruments Incorporated
- Girish A. Dixit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface modified interconnects
- Patent number 6,566,211
- Issue date May 20, 2003
- Texas Instruments Incorporated
- Carole D. Graas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making horizontal bipolar transistor with insulated base...
- Patent number 6,372,596
- Issue date Apr 16, 2002
- Texas Instruments Incorporated
- Robert H. Havemann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor and method
- Patent number 6,365,451
- Issue date Apr 2, 2002
- Texas Instruments Incorporated
- Robert H. Havemann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit interconnect and method
- Patent number 6,358,849
- Issue date Mar 19, 2002
- Texas Instruments Incorporated
- Robert H. Havemann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface modified interconnects
- Patent number 6,355,983
- Issue date Mar 12, 2002
- Texas Instruments Incorporated
- Carole D. Graas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Passivation of inlaid metallization
- Patent number 6,355,559
- Issue date Mar 12, 2002
- Texas Instruments Incorporated
- Robert H. Havemann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low pressure, low temperature, semiconductor gap filling process
- Patent number 6,333,265
- Issue date Dec 25, 2001
- Texas Instruments Incorporated
- Girish A. Dixit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit insulator and structure using low dielectric ins...
- Patent number 6,278,174
- Issue date Aug 21, 2001
- Texas Instruments Incorporated
- Robert H. Havemann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor and method
- Patent number 6,271,577
- Issue date Aug 7, 2001
- Texas Instruments Incorporated
- Robert H. Havemann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of making polysilicon resistor
- Patent number 6,261,915
- Issue date Jul 17, 2001
- Texas Instruments Incorporated
- Robert H. Eklund
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancements to polysilicon gate
- Patent number 6,248,638
- Issue date Jun 19, 2001
- Texas Instruments Incorporated
- Robert H. Havemann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming diffusion barriers for copper metallization in in...
- Patent number 6,245,672
- Issue date Jun 12, 2001
- Texas Instruments Incorporated
- Qi-Zhong Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Via formation in polymeric materials
- Patent number 6,188,125
- Issue date Feb 13, 2001
- Texas Instruments Incorporated
- Robert H. Havemann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multilayer metal structure for improved interconnect reliability
- Patent number 6,159,847
- Issue date Dec 12, 2000
- Texas Instruments Incorporated
- Robert H. Havemann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metallization method for porous dielectrics
- Patent number 6,156,651
- Issue date Dec 5, 2000
- Texas Instruments Incorporated
- Robert H. Havemann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Variable doping of metal plugs for enhanced reliability
- Patent number 6,130,156
- Issue date Oct 10, 2000
- Texas Instruments Incorporated
- Robert H. Havemann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to improve the texture of aluminum metallization
- Patent number 6,077,782
- Issue date Jun 20, 2000
- Texas Instruments Incorporated
- Wei-Yung Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multilevel interconnect structure with air gaps formed between meta...
- Patent number 5,936,295
- Issue date Aug 10, 1999
- Texas Instruments Incorporated
- Robert H. Havemann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for conductors with selective deposition
- Patent number 5,891,804
- Issue date Apr 6, 1999
- Texas Instruments Incorporated
- Robert H. Havemann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interconnect capacitance between metal leads
- Patent number 5,814,558
- Issue date Sep 29, 1998
- Texas Instruments Incorporated
- Shin-puu Jeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure with selective gap fill of submicron interconnects
- Patent number 5,789,818
- Issue date Aug 4, 1998
- Texas Instruments Incorporated
- Robert H. Havemann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of dual masking for selective gap fill of submicron intercon...
- Patent number 5,789,319
- Issue date Aug 4, 1998
- Texas Instruments Incorporated
- Robert H. Havemann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual masking for selective gap fill of submicron interconnects
- Patent number 5,786,624
- Issue date Jul 28, 1998
- Texas Instruments Incorporated
- Robert H. Havemann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure with selective gap fill of submicron interconnects
- Patent number 5,751,066
- Issue date May 12, 1998
- Texas Instruments Incorporated
- Robert H. Havemann
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Integrated circuit having a doped porous dielectric and method of m...
- Publication number 20040211991
- Publication date Oct 28, 2004
- Robert H. Havemann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING A FUSE IN A SEMICONDUCTOR DEVICE
- Publication number 20040005776
- Publication date Jan 8, 2004
- TEXAS INSTRUMENTS INCORPORATED
- Robert H. Havemann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Zero overlap contact/via with metal plug
- Publication number 20020086475
- Publication date Jul 4, 2002
- Robert H. Havemann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low pressure, low temperature, semiconductor gap filling process
- Publication number 20020064942
- Publication date May 30, 2002
- Girish A. Dixit
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated circuit having a doped porous dielectric and method of m...
- Publication number 20020064969
- Publication date May 30, 2002
- Robert H. Havemann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Surface modified interconnects
- Publication number 20020038911
- Publication date Apr 4, 2002
- Carole D. Graas
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCEMENTS TO POLYSILICON GATE
- Publication number 20020000621
- Publication date Jan 3, 2002
- ROBERT H. HAVEMANN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor and method
- Publication number 20010019872
- Publication date Sep 6, 2001
- Robert H. Havemann
- H01 - BASIC ELECTRIC ELEMENTS

Robert H. Havemann

Person

Patents Grantslast 30 patents

Nanoparticle cap layer

Nanoparticle cap layer

Integrated circuit having a doped porous dielectric and method of m...

Integrated circuit having a doped porous dielectric and method of m...

Methods for forming a fuse in a semiconductor device

Low pressure, low temperature, semiconductor gap filling process

Surface modified interconnects

Method of making horizontal bipolar transistor with insulated base...

Transistor and method

Integrated circuit interconnect and method

Surface modified interconnects

Passivation of inlaid metallization

Low pressure, low temperature, semiconductor gap filling process

Integrated circuit insulator and structure using low dielectric ins...

Transistor and method

Process of making polysilicon resistor

Enhancements to polysilicon gate

Method of forming diffusion barriers for copper metallization in in...

Via formation in polymeric materials

Multilayer metal structure for improved interconnect reliability

Metallization method for porous dielectrics

Variable doping of metal plugs for enhanced reliability

Method to improve the texture of aluminum metallization

Multilevel interconnect structure with air gaps formed between meta...

Process for conductors with selective deposition

Interconnect capacitance between metal leads

Structure with selective gap fill of submicron interconnects

Method of dual masking for selective gap fill of submicron intercon...

Dual masking for selective gap fill of submicron interconnects

Structure with selective gap fill of submicron interconnects

Patents Applicationslast 30 patents

Integrated circuit having a doped porous dielectric and method of m...

METHODS FOR FORMING A FUSE IN A SEMICONDUCTOR DEVICE

Zero overlap contact/via with metal plug

Low pressure, low temperature, semiconductor gap filling process

Integrated circuit having a doped porous dielectric and method of m...

Surface modified interconnects

ENHANCEMENTS TO POLYSILICON GATE

Transistor and method