Robert Haase

Person

San Pedro, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device with semiconductor mesas between adjacent gate...
- Patent number 12,159,933
- Issue date Dec 3, 2024
- Infineon Technologies Austria AG
- Anita Brazzale
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor transistor device and method of manufacturing the same
- Patent number 12,119,400
- Issue date Oct 15, 2024
- Infineon Technologies Austria AG
- Robert Paul Haase
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having low-k dielectric gaps between adj...
- Patent number 11,777,026
- Issue date Oct 3, 2023
- Infineon Technologies Austria AG
- Anita Brazzale
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superjunction device with oxygen inserted Si-layers
- Patent number 11,545,545
- Issue date Jan 3, 2023
- Infineon Technologies Austria AG
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device with buried field electrode connection
- Patent number 11,393,907
- Issue date Jul 19, 2022
- Infineon Technologies Austria AG
- Robert Paul Haase
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor transistor device and method of manufacturing the same
- Patent number 11,316,043
- Issue date Apr 26, 2022
- Infineon Technologies Austria AG
- Robert Paul Haase
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench field electrode termination structure for transistor devices
- Patent number 11,217,690
- Issue date Jan 4, 2022
- Infineon Technologies Austria AG
- Ashita Mirchandani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming oxygen inserted Si-layers in power semiconductor...
- Patent number 11,031,466
- Issue date Jun 8, 2021
- Infineon Technologies Austria AG
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device with a rectifier element between a field electrod...
- Patent number 10,991,812
- Issue date Apr 27, 2021
- Infineon Technologies Austria AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power devices with oxygen inserted Si-layers
- Patent number 10,868,172
- Issue date Dec 15, 2020
- Infineon Technologies Austria AG
- Oliver Blank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical trench power devices with oxygen inserted Si-layers
- Patent number 10,861,966
- Issue date Dec 8, 2020
- Infineon Technologies Austria AG
- Thomas Feil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with superjunction and oxygen inserted Si-layers
- Patent number 10,790,353
- Issue date Sep 29, 2020
- Infineon Technologies Austria AG
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxygen inserted Si-layers for reduced substrate dopant outdiffusion...
- Patent number 10,741,638
- Issue date Aug 11, 2020
- Infineon Technologies Austria AG
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxygen inserted Si-layers for reduced contact implant outdiffusion...
- Patent number 10,580,888
- Issue date Mar 3, 2020
- Infineon Technologies Austria AG
- Oliver Blank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxygen inserted Si-layers in vertical trench power devices
- Patent number 10,573,742
- Issue date Feb 25, 2020
- Infineon Technologies Austria AG
- Thomas Feil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate trench device with oxygen inserted si-layers
- Patent number 10,510,836
- Issue date Dec 17, 2019
- Infineon Technologies Austria AG
- Robert Haase
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor device
- Patent number 10,236,352
- Issue date Mar 19, 2019
- Infineon Technologies Austria AG
- Robert Haase
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a cavity
- Patent number 9,991,347
- Issue date Jun 5, 2018
- Infineon Technologies Americas Corp.
- Robert Haase
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor structure having integrated snubb...
- Patent number 9,966,464
- Issue date May 8, 2018
- Infineon Technologies Americas Corp.
- Kapil Kelkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor device and power semicondu...
- Patent number 9,812,535
- Issue date Nov 7, 2017
- Infineon Technologies Austria AG
- Robert Haase
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a cavity and method for manufacturing t...
- Patent number 9,691,864
- Issue date Jun 27, 2017
- Infineon Technologies Americas Corp.
- Robert Haase
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having integrated snubber resistance
- Patent number 9,627,328
- Issue date Apr 18, 2017
- Infineon Technologies Americas Corp.
- Kapil Kelkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with source trench and termination trenc...
- Patent number 9,620,583
- Issue date Apr 11, 2017
- Infineon Technologies Americas Corp.
- Kapil Kelkar
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE HAVING A SHIELDING LAYER AND A METHOD OF FABRI...
- Publication number 20240194745
- Publication date Jun 13, 2024
- Infineon Technologies Austria AG
- Ling Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH GATE NMOS TRANSISTOR AND TRENCH GATE PMOS TRANSISTOR MONOLIT...
- Publication number 20240113115
- Publication date Apr 4, 2024
- Infineon Technologies Austria AG
- Harsh Naik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE HAVING COUNTER-DOPED REGIONS IN BOTH AN...
- Publication number 20240047517
- Publication date Feb 8, 2024
- Infineon Technologies Austria AG
- Robert Haase
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH SEMICONDUCTOR MESAS BETWEEN ADJACENT GATE...
- Publication number 20230395711
- Publication date Dec 7, 2023
- Infineon Technologies Austria AG
- Anita Brazzale
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION STRUCTURE FOR SEPARATING DIFFERENT TRANSISTOR REGIONS ON...
- Publication number 20230335560
- Publication date Oct 19, 2023
- Infineon Technologies Austria AG
- Ling Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING A SEMICONDUCTOR DEVICE
- Publication number 20230307454
- Publication date Sep 28, 2023
- Infineon Technologies Austria AG
- Honghai He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING A SEMICONDUCTOR DEVICE
- Publication number 20230307450
- Publication date Sep 28, 2023
- Infineon Technologies Austria AG
- Harsh Naik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-CHIP ASSEMBLY AND METHODS OF PRODUCING MULTI-CHIP ASSEMBLIES
- Publication number 20230145931
- Publication date May 11, 2023
- Ling Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE HAVING LOW-K DIELECTRIC GAPS BETWEEN ADJ...
- Publication number 20220406930
- Publication date Dec 22, 2022
- Infineon Technologies Austria AG
- Anita Brazzale
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE HAVING CHARGE COMPENSATING FIELD PLATES IN-LINE W...
- Publication number 20220336594
- Publication date Oct 20, 2022
- Robert Haase
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Transistor Device and Method of Manufacturing the Same
- Publication number 20220231163
- Publication date Jul 21, 2022
- Infineon Technologies Austria AG
- Robert Paul Haase
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD ELECTRODE TERMINATION STRUCTURE FOR TRENCH-BASED TRANSISTOR D...
- Publication number 20220109068
- Publication date Apr 7, 2022
- Ashita Mirchandani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICE WITH BURIED FIELD ELECTRODE CONNECTION
- Publication number 20220052164
- Publication date Feb 17, 2022
- Robert Paul Haase
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench Field Electrode Termination Structure for Transistor Devices
- Publication number 20210083096
- Publication date Mar 18, 2021
- Ashita Mirchandani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Superjunction Device with Oxygen Inserted Si-Layers
- Publication number 20200350401
- Publication date Nov 5, 2020
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming Oxygen Inserted Si-Layers in Power Semiconductor...
- Publication number 20200303498
- Publication date Sep 24, 2020
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Transistor Device and Method of Manufacturing the Same
- Publication number 20200203525
- Publication date Jun 25, 2020
- Robert Paul Haase
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Superjunction and Oxygen Inserted Si-Layers
- Publication number 20200152733
- Publication date May 14, 2020
- Infineon Technologies Austria AG
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Power Devices with Oxygen Inserted Si-Layers
- Publication number 20200127134
- Publication date Apr 23, 2020
- Oliver Blank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Trench Power Devices with Oxygen Inserted Si-Layers
- Publication number 20200127135
- Publication date Apr 23, 2020
- Thomas Feil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OXYGEN INSERTED SI-LAYERS FOR REDUCED CONTACT IMPLANT OUTDIFFUSION...
- Publication number 20200052109
- Publication date Feb 13, 2020
- Infineon Technologies Austria AG
- Oliver Blank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Oxygen Inserted Si-Layers in Vertical Trench Power Devices
- Publication number 20200052110
- Publication date Feb 13, 2020
- Infineon Technologies Austria AG
- Thomas Feil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Oxygen Inserted Si-Layers for Reduced Substrate Dopant Outdiffusion...
- Publication number 20200052066
- Publication date Feb 13, 2020
- Infineon Technologies Austria AG
- Martin Poelzl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor Device with a Rectifier Element Between a Field Electrod...
- Publication number 20190035915
- Publication date Jan 31, 2019
- Infineon Technologies Austria AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Manufacturing a Semiconductor Device
- Publication number 20180151676
- Publication date May 31, 2018
- Infineon Technologies Austria AG
- Robert Haase
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having a Cavity
- Publication number 20170330943
- Publication date Nov 16, 2017
- Infineon Technologies Americas Corp.
- Robert Haase
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming a Semiconductor Structure Having Integrated Snubb...
- Publication number 20170186861
- Publication date Jun 29, 2017
- Infineon Technologies Americas Corp.
- Kapil Kelkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structure Having Integrated Snubber Resistance and Re...
- Publication number 20160104773
- Publication date Apr 14, 2016
- INTERNATIONAL RECTIFIER CORPORATION
- Kapil Kelkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device with Source Trench and Termination Trenc...
- Publication number 20160104766
- Publication date Apr 14, 2016
- INTERNATIONAL RECTIFIER CORPORATION
- Kapil Kelkar
- H01 - BASIC ELECTRIC ELEMENTS

Robert Haase

Person

Patents Grantslast 30 patents

Semiconductor device with semiconductor mesas between adjacent gate...

Semiconductor transistor device and method of manufacturing the same

Power semiconductor device having low-k dielectric gaps between adj...

Superjunction device with oxygen inserted Si-layers

Transistor device with buried field electrode connection

Semiconductor transistor device and method of manufacturing the same

Trench field electrode termination structure for transistor devices

Method of forming oxygen inserted Si-layers in power semiconductor...

Transistor device with a rectifier element between a field electrod...

Vertical power devices with oxygen inserted Si-layers

Vertical trench power devices with oxygen inserted Si-layers

Semiconductor device with superjunction and oxygen inserted Si-layers

Oxygen inserted Si-layers for reduced substrate dopant outdiffusion...

Oxygen inserted Si-layers for reduced contact implant outdiffusion...

Oxygen inserted Si-layers in vertical trench power devices

Gate trench device with oxygen inserted si-layers

Method for manufacturing a semiconductor device

Semiconductor device having a cavity

Method of forming a semiconductor structure having integrated snubb...

Method for manufacturing a semiconductor device and power semicondu...

Semiconductor device having a cavity and method for manufacturing t...

Semiconductor structure having integrated snubber resistance

Power semiconductor device with source trench and termination trenc...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE HAVING A SHIELDING LAYER AND A METHOD OF FABRI...

TRENCH GATE NMOS TRANSISTOR AND TRENCH GATE PMOS TRANSISTOR MONOLIT...

POWER SEMICONDUCTOR DEVICE HAVING COUNTER-DOPED REGIONS IN BOTH AN...

SEMICONDUCTOR DEVICE WITH SEMICONDUCTOR MESAS BETWEEN ADJACENT GATE...

ISOLATION STRUCTURE FOR SEPARATING DIFFERENT TRANSISTOR REGIONS ON...

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING A SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING A SEMICONDUCTOR DEVICE

MULTI-CHIP ASSEMBLY AND METHODS OF PRODUCING MULTI-CHIP ASSEMBLIES

POWER SEMICONDUCTOR DEVICE HAVING LOW-K DIELECTRIC GAPS BETWEEN ADJ...

TRANSISTOR DEVICE HAVING CHARGE COMPENSATING FIELD PLATES IN-LINE W...

Semiconductor Transistor Device and Method of Manufacturing the Same

FIELD ELECTRODE TERMINATION STRUCTURE FOR TRENCH-BASED TRANSISTOR D...

TRANSISTOR DEVICE WITH BURIED FIELD ELECTRODE CONNECTION

Trench Field Electrode Termination Structure for Transistor Devices

Superjunction Device with Oxygen Inserted Si-Layers

Method of Forming Oxygen Inserted Si-Layers in Power Semiconductor...

Semiconductor Transistor Device and Method of Manufacturing the Same

Semiconductor Device with Superjunction and Oxygen Inserted Si-Layers

Vertical Power Devices with Oxygen Inserted Si-Layers

Vertical Trench Power Devices with Oxygen Inserted Si-Layers

OXYGEN INSERTED SI-LAYERS FOR REDUCED CONTACT IMPLANT OUTDIFFUSION...

Oxygen Inserted Si-Layers in Vertical Trench Power Devices

Oxygen Inserted Si-Layers for Reduced Substrate Dopant Outdiffusion...

Transistor Device with a Rectifier Element Between a Field Electrod...

Method for Manufacturing a Semiconductor Device

Semiconductor Device Having a Cavity

Method of Forming a Semiconductor Structure Having Integrated Snubb...

Semiconductor Structure Having Integrated Snubber Resistance and Re...

Power Semiconductor Device with Source Trench and Termination Trenc...