Robert J. Mears

Person

Wellesley, MA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method for making gate-all-around (GAA) device including a superlat...
- Patent number 12,142,641
- Issue date Nov 12, 2024
- ATOMERA INCORPORATED
- Keith Doran Weeks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making semiconductor device including superlattice with...
- Patent number 12,119,380
- Issue date Oct 15, 2024
- ATOMERA INCORPORATED
- Keith Doran Weeks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radio frequency (RF) semiconductor devices including a ground plane...
- Patent number 12,020,926
- Issue date Jun 25, 2024
- ATOMERA INCORPORATED
- Hideki Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for making radio frequency (RF) semiconductor devices inclu...
- Patent number 12,014,923
- Issue date Jun 18, 2024
- ATOMERA INCORPORATED
- Hideki Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around (GAA) device including a superlattice
- Patent number 11,978,771
- Issue date May 7, 2024
- ATOMERA INCORPORATED
- Keith Doran Weeks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making semiconductor device including superlattice with...
- Patent number 11,848,356
- Issue date Dec 19, 2023
- ATOMERA INCORPORATED
- Keith Doran Weeks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including superlattice with oxygen and carbon...
- Patent number 11,837,634
- Issue date Dec 5, 2023
- ATOMERA INCORPORATED
- Keith Doran Weeks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for making radio frequency (RF) semiconductor devices inclu...
- Patent number 11,742,202
- Issue date Aug 29, 2023
- ATOMERA INCORPORATED
- Hideki Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical semiconductor device with enhanced contact structure and a...
- Patent number 11,664,427
- Issue date May 30, 2023
- ATOMERA INCORPORATED
- Robert John Stephenson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making superlattice structures with reduced defect densi...
- Patent number 11,430,869
- Issue date Aug 30, 2022
- ATOMERA INCORPORATED
- Keith Doran Weeks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical semiconductor device with enhanced contact structure and a...
- Patent number 11,387,325
- Issue date Jul 12, 2022
- ATOMERA INCORPORATED
- Robert John Stephenson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including hyper-abrupt junction region includ...
- Patent number 11,183,565
- Issue date Nov 23, 2021
- ATOMERA INCORPORATED
- Richard Burton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making semiconductor devices with hyper-abrupt junction...
- Patent number 10,937,868
- Issue date Mar 2, 2021
- ATOMERA INCORPORATED
- Richard Burton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a varactor with a hyper-abrupt junction region in...
- Patent number 10,937,888
- Issue date Mar 2, 2021
- ATOMERA INCORPORATED
- Richard Burton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a semiconductor device including enhanced contact...
- Patent number 10,879,356
- Issue date Dec 29, 2020
- ATOMERA INCORPORATED
- Robert John Stephenson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a semiconductor device having a hyper-abrupt junc...
- Patent number 10,879,357
- Issue date Dec 29, 2020
- ATOMERA INCORPORATED
- Richard Burton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a varactor with hyper-abrupt junction region incl...
- Patent number 10,868,120
- Issue date Dec 15, 2020
- ATOMERA INCORPORATED
- Richard Burton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a FINFET including source and drain dopant diffus...
- Patent number 10,854,717
- Issue date Dec 1, 2020
- ATOMERA INCORPORATED
- Hideki Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including body contact dopant diffusion blocki...
- Patent number 10,847,618
- Issue date Nov 24, 2020
- ATOMERA INCORPORATED
- Hideki Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making semiconductor device including body contact dopan...
- Patent number 10,840,335
- Issue date Nov 17, 2020
- ATOMERA INCORPORATED
- Hideki Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with metal-semiconductor contacts including ox...
- Patent number 10,840,336
- Issue date Nov 17, 2020
- ATOMERA INCORPORATED
- Daniel Connelly
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Varactor with hyper-abrupt junction region including a superlattice
- Patent number 10,840,388
- Issue date Nov 17, 2020
- ATOMERA INCORPORATED
- Richard Burton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a FINFET having reduced contact resistance
- Patent number 10,840,337
- Issue date Nov 17, 2020
- ATOMERA INCORPORATED
- Hideki Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including hyper-abrupt junction region includ...
- Patent number 10,825,901
- Issue date Nov 3, 2020
- ATOMERA INCORPORATED
- Richard Burton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Varactor with hyper-abrupt junction region including spaced-apart s...
- Patent number 10,825,902
- Issue date Nov 3, 2020
- ATOMERA INCORPORATED
- Richard Burton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making semiconductor device including source/drain dopan...
- Patent number 10,818,755
- Issue date Oct 27, 2020
- ATOMERA INCORPORATED
- Hideki Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making superlattice structures with reduced defect densi...
- Patent number 10,811,498
- Issue date Oct 20, 2020
- ATOMERA INCORPORATED
- Keith Doran Weeks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including enhanced contact structures having a...
- Patent number 10,777,451
- Issue date Sep 15, 2020
- ATOMERA INCORPORATED
- Robert John Stephenson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a semiconductor device including non-monocrystall...
- Patent number 10,741,436
- Issue date Aug 11, 2020
- ATOMERA INCORPORATED
- Robert John Stephenson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a semiconductor device including compound semicon...
- Patent number 10,727,049
- Issue date Jul 28, 2020
- ATOMERA INCORPORATED
- Keith Doran Weeks
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR MAKING SEMICONDUCTOR DEVICE INCLUDING SUPERLATTICE WITH...
- Publication number 20250006794
- Publication date Jan 2, 2025
- ATOMERA INCORPORATED
- KEITH DORAN WEEKS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RADIO FREQUENCY (RF) SEMICONDUCTOR DEVICES INCLUDING A GROUND PLANE...
- Publication number 20240321575
- Publication date Sep 26, 2024
- ATOMERA INCORPORATED
- HIDEKI TAKEUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR MAKING RADIO FREQUENCY (RF) SEMICONDUCTOR DEVICES INCLU...
- Publication number 20240304443
- Publication date Sep 12, 2024
- ATOMERA INCORPORATED
- HIDEKI TAKEUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND (GAA) DEVICE INCLUDING A SUPERLATTICE
- Publication number 20240194740
- Publication date Jun 13, 2024
- ATOMERA INCORPORATED
- KEITH DORAN WEEKS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING SEMICONDUCTOR DEVICE INCLUDING SUPERLATTICE WITH...
- Publication number 20240063268
- Publication date Feb 22, 2024
- ATOMERA INCORPORATED
- KEITH DORAN WEEKS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR MAKING SEMICONDUCTOR DEVICES WITH SUPERLATTICE AND EMBE...
- Publication number 20230411491
- Publication date Dec 21, 2023
- ATOMERA INCORPORATED
- MAREK HYTHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH EMBEDDED QUANTUM DOTS AND RELATED METHODS
- Publication number 20230411557
- Publication date Dec 21, 2023
- ATOMERA INCORPORATED
- MAREK HYTHA
- B82 - NANO-TECHNOLOGY
Information Patent Application
DRAM SENSE AMPLIFIER ARCHITECTURE WITH REDUCED POWER CONSUMPTION AN...
- Publication number 20230363150
- Publication date Nov 9, 2023
- ATOMERA INCORPORATED
- Richard Stephen Roy
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS FOR MAKING RADIO FREQUENCY (RF) SEMICONDUCTOR DEVICES INCLU...
- Publication number 20230352299
- Publication date Nov 2, 2023
- ATOMERA INCORPORATED
- HIDEKI TAKEUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND (GAA) DEVICE INCLUDING A SUPERLATTICE
- Publication number 20230121774
- Publication date Apr 20, 2023
- ATOMERA INCORPORATED
- KEITH DORAN WEEKS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING GATE-ALL-AROUND (GAA) DEVICE INCLUDING A SUPERLAT...
- Publication number 20230122723
- Publication date Apr 20, 2023
- ATOMERA INCORPORATED
- KEITH DORAN WEEKS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING SEMICONDUCTOR DEVICE INCLUDING A SUPERLATTICE PRO...
- Publication number 20220384600
- Publication date Dec 1, 2022
- ATOMERA INCORPORATED
- ROBERT J. MEARS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A SUPERLATTICE PROVIDING METAL WORK...
- Publication number 20220376047
- Publication date Nov 24, 2022
- ATOMERA INCORPORATED
- ROBERT J. MEARS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RADIO FREQUENCY (RF) SEMICONDUCTOR DEVICES INCLUDING A GROUND PLANE...
- Publication number 20220285152
- Publication date Sep 8, 2022
- ATOMERA INCORPORATED
- HIDEKI TAKEUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL SEMICONDUCTOR DEVICE WITH ENHANCED CONTACT STRUCTURE AND A...
- Publication number 20220285498
- Publication date Sep 8, 2022
- ATOMERA INCORPORATED
- Robert John Stephenson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR MAKING RADIO FREQUENCY (RF) SEMICONDUCTOR DEVICES INCLU...
- Publication number 20220285153
- Publication date Sep 8, 2022
- ATOMERA INCORPORATED
- HIDEKI TAKEUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING SUPERLATTICE WITH OXYGEN AND CARBON...
- Publication number 20220005926
- Publication date Jan 6, 2022
- ATOMERA INCORPORATED
- KEITH DORAN WEEKS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING A SEMICONDUCTOR DEVICE USING SUPERLATTICES WITH D...
- Publication number 20220005706
- Publication date Jan 6, 2022
- ATOMERA INCORPORATED
- KEITH DORAN WEEKS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING SEMICONDUCTOR DEVICE INCLUDING SUPERLATTICE WITH...
- Publication number 20220005927
- Publication date Jan 6, 2022
- ATOMERA INCORPORATED
- KEITH DORAN WEEKS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL SEMICONDUCTOR DEVICE WITH ENHANCED CONTACT STRUCTURE AND A...
- Publication number 20210074814
- Publication date Mar 11, 2021
- ATOMERA INCORPORATED
- Robert John Stephenson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES INCLUDING HYPER-ABRUPT JUNCTION REGION INCLUD...
- Publication number 20210020749
- Publication date Jan 21, 2021
- ATOMERA INCORPORATED
- Richard Burton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING A SEMICONDUCTOR DEVICE HAVING A HYPER-ABRUPT JUNC...
- Publication number 20210020748
- Publication date Jan 21, 2021
- ATOMERA INCORPORATED
- Richard Burton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING A VARACTOR WITH A HYPER-ABRUPT JUNCTION REGION IN...
- Publication number 20210020759
- Publication date Jan 21, 2021
- ATOMERA INCORPORATED
- Richard Burton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING SEMICONDUCTOR DEVICES WITH HYPER-ABRUPT JUNCTION...
- Publication number 20210020750
- Publication date Jan 21, 2021
- ATOMERA INCORPORATED
- Richard Burton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING SUPERLATTICE STRUCTURES WITH REDUCED DEFECT DENSI...
- Publication number 20200411645
- Publication date Dec 31, 2020
- ATOMERA INCORPORATED
- Keith Doran Weeks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING SEMICONDUCTOR DEVICE INCLUDING SOURCE/DRAIN DOPAN...
- Publication number 20200161429
- Publication date May 21, 2020
- ATOMERA INCORPORATED
- HIDEKI TAKEUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH METAL-SEMICONDUCTOR CONTACTS INCLUDING OX...
- Publication number 20200161426
- Publication date May 21, 2020
- ATOMERA INCORPORATED
- Daniel Connelly
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING A FINFET HAVING REDUCED CONTACT RESISTANCE
- Publication number 20200161427
- Publication date May 21, 2020
- ATOMERA INCORPORATED
- HIDEKI TAKEUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING BODY CONTACT DOPANT DIFFUSION BLOCKI...
- Publication number 20200161430
- Publication date May 21, 2020
- ATOMERA INCORPORATED
- HIDEKI TAKEUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING SEMICONDUCTOR DEVICE INCLUDING BODY CONTACT DOPAN...
- Publication number 20200161425
- Publication date May 21, 2020
- ATOMERA INCORPORATED
- HIDEKI TAKEUCHI
- H01 - BASIC ELECTRIC ELEMENTS

Robert J. Mears

Person

Patents Grantslast 30 patents

Method for making gate-all-around (GAA) device including a superlat...

Method for making semiconductor device including superlattice with...

Radio frequency (RF) semiconductor devices including a ground plane...

Methods for making radio frequency (RF) semiconductor devices inclu...

Gate-all-around (GAA) device including a superlattice

Method for making semiconductor device including superlattice with...

Semiconductor device including superlattice with oxygen and carbon...

Methods for making radio frequency (RF) semiconductor devices inclu...

Vertical semiconductor device with enhanced contact structure and a...

Method for making superlattice structures with reduced defect densi...

Vertical semiconductor device with enhanced contact structure and a...

Semiconductor devices including hyper-abrupt junction region includ...

Method for making semiconductor devices with hyper-abrupt junction...

Method for making a varactor with a hyper-abrupt junction region in...

Method for making a semiconductor device including enhanced contact...

Method for making a semiconductor device having a hyper-abrupt junc...

Method for making a varactor with hyper-abrupt junction region incl...

Method for making a FINFET including source and drain dopant diffus...

Semiconductor device including body contact dopant diffusion blocki...

Method for making semiconductor device including body contact dopan...

Semiconductor device with metal-semiconductor contacts including ox...

Varactor with hyper-abrupt junction region including a superlattice

Method for making a FINFET having reduced contact resistance

Semiconductor devices including hyper-abrupt junction region includ...

Varactor with hyper-abrupt junction region including spaced-apart s...

Method for making semiconductor device including source/drain dopan...

Method for making superlattice structures with reduced defect densi...

Semiconductor device including enhanced contact structures having a...

Method for making a semiconductor device including non-monocrystall...

Method for making a semiconductor device including compound semicon...

Patents Applicationslast 30 patents

METHOD FOR MAKING SEMICONDUCTOR DEVICE INCLUDING SUPERLATTICE WITH...

RADIO FREQUENCY (RF) SEMICONDUCTOR DEVICES INCLUDING A GROUND PLANE...

METHODS FOR MAKING RADIO FREQUENCY (RF) SEMICONDUCTOR DEVICES INCLU...

GATE-ALL-AROUND (GAA) DEVICE INCLUDING A SUPERLATTICE

METHOD FOR MAKING SEMICONDUCTOR DEVICE INCLUDING SUPERLATTICE WITH...

METHODS FOR MAKING SEMICONDUCTOR DEVICES WITH SUPERLATTICE AND EMBE...

SEMICONDUCTOR DEVICES WITH EMBEDDED QUANTUM DOTS AND RELATED METHODS

DRAM SENSE AMPLIFIER ARCHITECTURE WITH REDUCED POWER CONSUMPTION AN...

METHODS FOR MAKING RADIO FREQUENCY (RF) SEMICONDUCTOR DEVICES INCLU...

GATE-ALL-AROUND (GAA) DEVICE INCLUDING A SUPERLATTICE

METHOD FOR MAKING GATE-ALL-AROUND (GAA) DEVICE INCLUDING A SUPERLAT...

METHOD FOR MAKING SEMICONDUCTOR DEVICE INCLUDING A SUPERLATTICE PRO...

SEMICONDUCTOR DEVICE INCLUDING A SUPERLATTICE PROVIDING METAL WORK...

RADIO FREQUENCY (RF) SEMICONDUCTOR DEVICES INCLUDING A GROUND PLANE...

VERTICAL SEMICONDUCTOR DEVICE WITH ENHANCED CONTACT STRUCTURE AND A...

METHODS FOR MAKING RADIO FREQUENCY (RF) SEMICONDUCTOR DEVICES INCLU...

SEMICONDUCTOR DEVICE INCLUDING SUPERLATTICE WITH OXYGEN AND CARBON...

METHOD FOR MAKING A SEMICONDUCTOR DEVICE USING SUPERLATTICES WITH D...

METHOD FOR MAKING SEMICONDUCTOR DEVICE INCLUDING SUPERLATTICE WITH...

VERTICAL SEMICONDUCTOR DEVICE WITH ENHANCED CONTACT STRUCTURE AND A...

SEMICONDUCTOR DEVICES INCLUDING HYPER-ABRUPT JUNCTION REGION INCLUD...

METHOD FOR MAKING A SEMICONDUCTOR DEVICE HAVING A HYPER-ABRUPT JUNC...

METHOD FOR MAKING A VARACTOR WITH A HYPER-ABRUPT JUNCTION REGION IN...

METHOD FOR MAKING SEMICONDUCTOR DEVICES WITH HYPER-ABRUPT JUNCTION...

METHOD FOR MAKING SUPERLATTICE STRUCTURES WITH REDUCED DEFECT DENSI...

METHOD FOR MAKING SEMICONDUCTOR DEVICE INCLUDING SOURCE/DRAIN DOPAN...

SEMICONDUCTOR DEVICE WITH METAL-SEMICONDUCTOR CONTACTS INCLUDING OX...

METHOD FOR MAKING A FINFET HAVING REDUCED CONTACT RESISTANCE

SEMICONDUCTOR DEVICE INCLUDING BODY CONTACT DOPANT DIFFUSION BLOCKI...

METHOD FOR MAKING SEMICONDUCTOR DEVICE INCLUDING BODY CONTACT DOPAN...