Robert M. Rassel

Person

Colchester, VT, US

People

Patents Grantslast 30 patents

Information Patent Grant
Embedding semiconductor devices in silicon-on-insulator wafers conn...
- Patent number 9,412,736
- Issue date Aug 9, 2016
- GLOBALFOUNDRIES Inc.
- Yan Ding
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit and design structure having reduced through sili...
- Patent number 9,406,562
- Issue date Aug 2, 2016
- GLOBALFOUNDRIES, INC.
- Jeffrey P. Bonn
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Forming structures on resistive substrates
- Patent number 9,257,324
- Issue date Feb 9, 2016
- GLOBALFOUNDRIES Inc.
- Alan B. Botula
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Si and SiGeC on a buried oxide layer on a substrate
- Patent number 9,087,925
- Issue date Jul 21, 2015
- International Business Machines Corporation
- Xuefeng Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit including transistor structure on depleted silic...
- Patent number 9,041,105
- Issue date May 26, 2015
- International Business Machines Corporation
- William F. Clark
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junction field effect transistor structure with P-type silicon germ...
- Patent number 8,921,172
- Issue date Dec 30, 2014
- International Business Machines Corporation
- Xuefeng Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including asymmetric lightly doped drain (LDD)...
- Patent number 8,912,597
- Issue date Dec 16, 2014
- International Business Machines Corporation
- Alan B. Botula
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making heat sink for integrated circuit devices
- Patent number 8,881,379
- Issue date Nov 11, 2014
- International Business Machines Corporation
- Douglas D. Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicided trench contact to buried conductive layer
- Patent number 8,872,281
- Issue date Oct 28, 2014
- International Business Machines Corporation
- Douglas D. Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky barrier diodes with a guard ring formed by selective epitaxy
- Patent number 8,871,600
- Issue date Oct 28, 2014
- International Business Machines Corporation
- David L. Harame
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including in wafer inductors, related method a...
- Patent number 8,809,998
- Issue date Aug 19, 2014
- International Business Machines Corporation
- Renata A. Camillo-Castillo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Back-end-of-line metal-oxide-semiconductor varactors
- Patent number 8,809,155
- Issue date Aug 19, 2014
- International Business Machines Corporation
- John J. Ellis-Monaghan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric wedge JFET, related method and design structure
- Patent number 8,779,476
- Issue date Jul 15, 2014
- International Business Machines Corporation
- Xuefeng Liu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Junction field effect transistor structure with P-type silicon germ...
- Patent number 8,754,455
- Issue date Jun 17, 2014
- International Business Machines Corporation
- Xuefeng Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming structures on resistive substrates
- Patent number 8,735,986
- Issue date May 27, 2014
- International Business Machines Corporation
- Alan B. Botula
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Intralevel conductive light shield
- Patent number 8,709,855
- Issue date Apr 29, 2014
- International Business Machines Corporation
- Jeffrey P. Gambino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having vias and high density capacitors
- Patent number 8,674,423
- Issue date Mar 18, 2014
- International Business Machines Corporation
- David S. Collins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junction gate field effect transistor structure having n-channel
- Patent number 8,618,583
- Issue date Dec 31, 2013
- International Business Machines Corporation
- Panglijen Candra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Anti-blooming pixel sensor cell with active neutral density filter,...
- Patent number 8,618,588
- Issue date Dec 31, 2013
- International Business Machines Corporation
- Kristin M. Ackerson
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Method of forming MIM capacitor structure in FEOL
- Patent number 8,609,505
- Issue date Dec 17, 2013
- International Business Machines Corporation
- Douglas D. Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky barrier diodes for millimeter wave SiGe BiCMOS applications
- Patent number 8,592,293
- Issue date Nov 26, 2013
- International Business Machines Corporation
- Jeffrey B. Johnson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including asymmetric lightly doped drain (LDD)...
- Patent number 8,518,782
- Issue date Aug 27, 2013
- International Business Machines Corporation
- Alan B. Botula
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky barrier diode, a method of forming the diode and a design...
- Patent number 8,519,478
- Issue date Aug 27, 2013
- International Business Machines Corporation
- Robert M. Rassel
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Lateral hyperabrupt junction varactor diode in an SOI substrate
- Patent number 8,492,843
- Issue date Jul 23, 2013
- International Business Machines Corporation
- Jeffrey B. Johnson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric wedge JFET, related method and design structure
- Patent number 8,481,380
- Issue date Jul 9, 2013
- International Business Machines Corporation
- Xuefeng Liu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Asymmetric silicon-on-insulator (SOI) junction field effect transis...
- Patent number 8,466,501
- Issue date Jun 18, 2013
- International Business Machines Corporation
- Douglas B. Hershberger
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Process for single and multiple level metal-insulator-metal integra...
- Patent number 8,435,864
- Issue date May 7, 2013
- International Business Machines Corporation
- Anil K. Chinthakindi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky barrier diode with perimeter capacitance well junction
- Patent number 8,421,181
- Issue date Apr 16, 2013
- International Business Machines Corporation
- Frederick G. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MIM capacitor and method of making same
- Patent number 8,390,038
- Issue date Mar 5, 2013
- International Business Machines Corporation
- Douglas Duane Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicided trench contact to buried conductive layer
- Patent number 8,338,265
- Issue date Dec 25, 2012
- International Business Machines Corporation
- Douglas D. Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
EMBEDDING SEMICONDUCTOR DEVICES IN SILICON-ON-INSULATOR WAFERS CONN...
- Publication number 20150357325
- Publication date Dec 10, 2015
- International Business Machines Corporation
- Yan Ding
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY BARRIER DIODES WITH A GUARD RING FORMED BY SELECTIVE EPITAXY
- Publication number 20140312453
- Publication date Oct 23, 2014
- David L. Harame
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICIDED TRENCH CONTACT TO BURIED CONDUCTIVE LAYER
- Publication number 20140239498
- Publication date Aug 28, 2014
- International Business Machines Corporation
- Douglas D. Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JUNCTION FIELD EFFECT TRANSISTOR STRUCTURE WITH P-TYPE SILICON GERM...
- Publication number 20140235021
- Publication date Aug 21, 2014
- International Business Machines Corporation
- Xuefeng Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING STRUCTURES ON RESISTIVE SUBSTRATES
- Publication number 20140213036
- Publication date Jul 31, 2014
- International Business Machines Corporation
- Alan B. Botula
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACK-END-OF-LINE METAL-OXIDE-SEMICONDUCTOR VARACTORS
- Publication number 20140097434
- Publication date Apr 10, 2014
- International Business Machines Corporation
- John J. Ellis-Monaghan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT INCLUDING TRANSISTOR STRUCTURE ON DEPLETED SILIC...
- Publication number 20140021547
- Publication date Jan 23, 2014
- International Business Machines Corporation
- William F. Clark
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC WEDGE JFET, RELATED METHOD AND DESIGN STRUCTURE
- Publication number 20130299881
- Publication date Nov 14, 2013
- International Business Machines Corporation
- Xuefeng Liu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING ASYMMETRIC LIGHTLY DOPED DRAIN (LDD)...
- Publication number 20130299903
- Publication date Nov 14, 2013
- International Business Machines Corporation
- Alan B. Botula
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BICMOS DEVICES ON ETSOI
- Publication number 20130277753
- Publication date Oct 24, 2013
- International Business Machines Corporation
- William F. Clark
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Forming Structures on Resistive Substrates
- Publication number 20130140668
- Publication date Jun 6, 2013
- International Business Machines Corporation
- Alan B. Botula
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Schottky Barrier Diodes With a Guard Ring Formed by Selective Epitaxy
- Publication number 20130119505
- Publication date May 16, 2013
- International Business Machines Corporation
- David L. Harame
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING IN WAFER INDUCTORS, RELATED METHOD A...
- Publication number 20130105941
- Publication date May 2, 2013
- International Business Machines Corporation
- Daniel S. Vanslette
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR STRUCTURE AND METHOD OF FORMING SAME
- Publication number 20120292669
- Publication date Nov 22, 2012
- International Business Machines Corporation
- Panglijen Candra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEAT SINK FOR INTEGRATED CIRCUIT DEVICES
- Publication number 20120214280
- Publication date Aug 23, 2012
- International Business Machines Corporation
- Douglas D. COOLBAUGH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL HYPERABRUPT JUNCTION VARACTOR DIODE IN AN SOI SUBSTRATE
- Publication number 20120199907
- Publication date Aug 9, 2012
- International Business Machines Corporation
- Jeffrey B. Johnson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY BARRIER DIODE, A METHOD OF FORMING THE DIODE AND A DESIGN...
- Publication number 20120193747
- Publication date Aug 2, 2012
- International Business Machines Corporation
- Robert M. Rassel
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
INTEGRATED STRUCTURES OF HIGH PERFORMANCE ACTIVE DEVICES AND PASSIV...
- Publication number 20120192139
- Publication date Jul 26, 2012
- International Business Machines Corporation
- Robert M. Rassel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR SINGLE AND MULTIPLE LEVEL METAL-INSULATOR-METAL INTEGRA...
- Publication number 20120184081
- Publication date Jul 19, 2012
- International Business Machines Corporation
- Anil K. CHINTHAKINDI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT AND DESIGN STRUCTURE HAVING REDUCED THROUGH SILI...
- Publication number 20120181700
- Publication date Jul 19, 2012
- International Business Machines Corporation
- Jeffrey P. Bonn
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
JUNCTION FIELD EFFECT TRANSISTOR STRUCTURE WITH P-TYPE SILICON GERM...
- Publication number 20120168820
- Publication date Jul 5, 2012
- International Business Machines Corporation
- Xuefeng Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERLEVEL CONDUCTIVE LIGHT SHIELD
- Publication number 20120161299
- Publication date Jun 28, 2012
- International Business Machines Corporation
- Jeffrey P. Gambino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING ASYMMETRIC LIGHTLY DOPED DRAIN (LDD)...
- Publication number 20120146158
- Publication date Jun 14, 2012
- International Business Machines Corporation
- Alan B. Botula
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING MIM CAPACITOR STRUCTURE IN FEOL
- Publication number 20120122293
- Publication date May 17, 2012
- International Business Machines Corporation
- Douglas D. Coolbaugh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANTI-BLOOMING PIXEL SENSOR CELL WITH ACTIVE NEUTRAL DENSITY FILTER,...
- Publication number 20120105692
- Publication date May 3, 2012
- International Business Machines Corporation
- Kristin M. ACKERSON
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
ASYMMETRIC WEDGE JFET, RELATED METHOD AND DESIGN STRUCTURE
- Publication number 20120074469
- Publication date Mar 29, 2012
- International Business Machines Corporation
- Xuefeng Liu
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
STRUCTURE, DESIGN STRUCTURE AND METHOD OF MANUFACTURING A STRUCTURE...
- Publication number 20120061801
- Publication date Mar 15, 2012
- International Business Machines Corporation
- David S. COLLINS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY BARRIER DIODE WITH PERIMETER CAPACITANCE WELL JUNCTION
- Publication number 20120018837
- Publication date Jan 26, 2012
- International Business Machines Coporation
- Frederick G. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED STRUCTURES OF HIGH PERFORMANCE ACTIVE DEVICES AND PASSIV...
- Publication number 20120013017
- Publication date Jan 19, 2012
- International Business Machines Corporation
- Robert M. Rassel
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC SILICON-ON-INSULATOR (SOI) JUNCTION FIELD EFFECT TRANSIS...
- Publication number 20110284930
- Publication date Nov 24, 2011
- International Business Machines Corporation
- Douglas B. Hershberger
- G06 - COMPUTING CALCULATING COUNTING

Robert M. Rassel

Person

Patents Grantslast 30 patents

Embedding semiconductor devices in silicon-on-insulator wafers conn...

Integrated circuit and design structure having reduced through sili...

Forming structures on resistive substrates

Si and SiGeC on a buried oxide layer on a substrate

Integrated circuit including transistor structure on depleted silic...

Junction field effect transistor structure with P-type silicon germ...

Semiconductor device including asymmetric lightly doped drain (LDD)...

Method of making heat sink for integrated circuit devices

Silicided trench contact to buried conductive layer

Schottky barrier diodes with a guard ring formed by selective epitaxy

Semiconductor device including in wafer inductors, related method a...

Back-end-of-line metal-oxide-semiconductor varactors

Asymmetric wedge JFET, related method and design structure

Junction field effect transistor structure with P-type silicon germ...

Forming structures on resistive substrates

Intralevel conductive light shield

Semiconductor structure having vias and high density capacitors

Junction gate field effect transistor structure having n-channel

Anti-blooming pixel sensor cell with active neutral density filter,...

Method of forming MIM capacitor structure in FEOL

Schottky barrier diodes for millimeter wave SiGe BiCMOS applications

Semiconductor device including asymmetric lightly doped drain (LDD)...

Schottky barrier diode, a method of forming the diode and a design...

Lateral hyperabrupt junction varactor diode in an SOI substrate

Asymmetric wedge JFET, related method and design structure

Asymmetric silicon-on-insulator (SOI) junction field effect transis...

Process for single and multiple level metal-insulator-metal integra...

Schottky barrier diode with perimeter capacitance well junction

MIM capacitor and method of making same

Silicided trench contact to buried conductive layer

Patents Applicationslast 30 patents

EMBEDDING SEMICONDUCTOR DEVICES IN SILICON-ON-INSULATOR WAFERS CONN...

SCHOTTKY BARRIER DIODES WITH A GUARD RING FORMED BY SELECTIVE EPITAXY

SILICIDED TRENCH CONTACT TO BURIED CONDUCTIVE LAYER

JUNCTION FIELD EFFECT TRANSISTOR STRUCTURE WITH P-TYPE SILICON GERM...

FORMING STRUCTURES ON RESISTIVE SUBSTRATES

BACK-END-OF-LINE METAL-OXIDE-SEMICONDUCTOR VARACTORS

INTEGRATED CIRCUIT INCLUDING TRANSISTOR STRUCTURE ON DEPLETED SILIC...

ASYMMETRIC WEDGE JFET, RELATED METHOD AND DESIGN STRUCTURE

SEMICONDUCTOR DEVICE INCLUDING ASYMMETRIC LIGHTLY DOPED DRAIN (LDD)...

BICMOS DEVICES ON ETSOI

Forming Structures on Resistive Substrates

Schottky Barrier Diodes With a Guard Ring Formed by Selective Epitaxy

SEMICONDUCTOR DEVICE INCLUDING IN WAFER INDUCTORS, RELATED METHOD A...

FIELD EFFECT TRANSISTOR STRUCTURE AND METHOD OF FORMING SAME

HEAT SINK FOR INTEGRATED CIRCUIT DEVICES

LATERAL HYPERABRUPT JUNCTION VARACTOR DIODE IN AN SOI SUBSTRATE

SCHOTTKY BARRIER DIODE, A METHOD OF FORMING THE DIODE AND A DESIGN...

INTEGRATED STRUCTURES OF HIGH PERFORMANCE ACTIVE DEVICES AND PASSIV...

PROCESS FOR SINGLE AND MULTIPLE LEVEL METAL-INSULATOR-METAL INTEGRA...

INTEGRATED CIRCUIT AND DESIGN STRUCTURE HAVING REDUCED THROUGH SILI...

JUNCTION FIELD EFFECT TRANSISTOR STRUCTURE WITH P-TYPE SILICON GERM...

INTERLEVEL CONDUCTIVE LIGHT SHIELD

SEMICONDUCTOR DEVICE INCLUDING ASYMMETRIC LIGHTLY DOPED DRAIN (LDD)...

METHOD OF FORMING MIM CAPACITOR STRUCTURE IN FEOL

ANTI-BLOOMING PIXEL SENSOR CELL WITH ACTIVE NEUTRAL DENSITY FILTER,...

ASYMMETRIC WEDGE JFET, RELATED METHOD AND DESIGN STRUCTURE

STRUCTURE, DESIGN STRUCTURE AND METHOD OF MANUFACTURING A STRUCTURE...

SCHOTTKY BARRIER DIODE WITH PERIMETER CAPACITANCE WELL JUNCTION

INTEGRATED STRUCTURES OF HIGH PERFORMANCE ACTIVE DEVICES AND PASSIV...

ASYMMETRIC SILICON-ON-INSULATOR (SOI) JUNCTION FIELD EFFECT TRANSIS...