Robert M. Wallace

Person

Garland, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Metal oxide semiconductor field effect transistor with crystalline...
- Patent number 11,081,590
- Issue date Aug 3, 2021
- Samsung Electronics Co., Ltd.
- Wei-E Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming crystalline oxides on III-V materials
- Patent number 10,475,930
- Issue date Nov 12, 2019
- Samsung Electronics Co., Ltd.
- Wei-E Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ionic barristor
- Patent number 9,812,568
- Issue date Nov 7, 2017
- Board of Regents, The University of Texas System
- Kyeongjae Cho
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Synthesizing graphene from metal-carbon solutions using ion implant...
- Patent number 8,461,028
- Issue date Jun 11, 2013
- Board of Regents, The University of Texas System
- Luigi Colombo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Synthesizing graphene from metal-carbon solutions using ion implant...
- Patent number 8,309,438
- Issue date Nov 13, 2012
- Board of Regents, The University of Texas System
- Luigi Colombo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for using field emitter arrays in chemical and biological ha...
- Patent number 7,288,171
- Issue date Oct 30, 2007
- University of North Texas
- Bruce E. Gnade
- A61 - MEDICAL OR VETERINARY SCIENCE HYGIENE
Information Patent Grant
High permittivity silicate gate dielectric
- Patent number 7,115,461
- Issue date Oct 3, 2006
- Texas Instruments Incorporated
- John Mark Anthony
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low temperature method for forming a thin, uniform oxide
- Patent number 7,030,038
- Issue date Apr 18, 2006
- Texas Instruments Incorporated
- Glen D. Wilk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for removing contaminants on a substrate
- Patent number 6,933,235
- Issue date Aug 23, 2005
- The Regents of the University of North Texas
- Manuel A. Quevedo-Lopez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming metal oxide gate structures and capacitor electrodes
- Patent number 6,897,105
- Issue date May 24, 2005
- Texas Instrument Incorporated
- Glen D. Wilk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High permittivity silicate gate dielectric
- Patent number 6,841,439
- Issue date Jan 11, 2005
- Texas Instruments Incorporated
- John Mark Anthony
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structure and method
- Patent number 6,784,507
- Issue date Aug 31, 2004
- Texas Instruments Incorporated
- Robert M. Wallace
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lower temperature method for forming high quality silicon-nitrogen...
- Patent number 6,730,977
- Issue date May 4, 2004
- Texas Instruments Incorporated
- Glen D. Wilk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fluorinated coating for an optical element
- Patent number 6,624,944
- Issue date Sep 23, 2003
- Texas Instruments Incorporated
- Robert M. Wallace
- G02 - OPTICS
Information Patent Grant
Lower temperature method for forming high quality silicon-nitrogen...
- Patent number 6,613,698
- Issue date Sep 2, 2003
- Texas Instruments Incorporated
- Glen D. Wilk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hafnium nitride gate dielectric
- Patent number 6,552,388
- Issue date Apr 22, 2003
- Texas Instruments Incorporated
- Glen D. Wilk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High charge storage density integrated circuit capacitor
- Patent number 6,468,856
- Issue date Oct 22, 2002
- Texas Instruments Incorporated
- Robert M. Wallace
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hafnium nitride gate dielectric
- Patent number 6,436,801
- Issue date Aug 20, 2002
- Texas Instruments Incorporated
- Glen D. Wilk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process to produce ultrathin crystalline silicon nitride on Si (111...
- Patent number 6,420,729
- Issue date Jul 16, 2002
- Texas Instruments Incorporated
- Robert M. Wallace
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated dielectric and method
- Patent number 6,335,238
- Issue date Jan 1, 2002
- Texas Instruments Incorporated
- Sunil V. Hanttangady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Zirconium and/or hafnium silicon-oxynitride gate dielectric
- Patent number 6,291,867
- Issue date Sep 18, 2001
- Texas Instruments Incorporated
- Robert M. Wallace
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Zirconium and/or hafnium oxynitride gate dielectric
- Patent number 6,291,866
- Issue date Sep 18, 2001
- Texas Instruments Incorporated
- Robert M. Wallace
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process to produce ultrathin crystalline silicon nitride on Si(111)...
- Patent number 6,277,681
- Issue date Aug 21, 2001
- Texas Instruments Incorporated
- Robert M. Wallace
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lower temperature method for forming high quality silicon-nitrogen...
- Patent number 6,274,510
- Issue date Aug 14, 2001
- Texas Instruments Incorporated
- Glen D. Wilk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for thin film deposition on single-crystal semiconductor sub...
- Patent number 6,258,637
- Issue date Jul 10, 2001
- Texas Instruments Incorporated
- Glen D. Wilk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low temperature method for forming a thin, uniform layer of aluminu...
- Patent number 6,245,606
- Issue date Jun 12, 2001
- Texas Instruments Incorporated
- Glen D. Wilk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device using movement of protons
- Patent number 6,159,829
- Issue date Dec 12, 2000
- William L. Warren
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of growing crystalline silicon overlayers on thin amorphous...
- Patent number 6,150,242
- Issue date Nov 21, 2000
- Texas Instruments Incorporated
- Jan Paul Van der Wagt
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor process with deuterium predominance at high temperature
- Patent number 6,143,634
- Issue date Nov 7, 2000
- Texas Instruments Incorporated
- Robert M. Wallace
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low temperature process for post-etch defluoridation of metals
- Patent number 6,140,243
- Issue date Oct 31, 2000
- Texas Instruments Incorporated
- Robert M. Wallace
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF FORMING CRYSTALLINE OXIDES ON III-V MATERIALS
- Publication number 20200035838
- Publication date Jan 30, 2020
- Samsung Electronics Co., Ltd.
- Wei-E Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING CRYSTALLINE OXIDES ON III-V MATERIALS
- Publication number 20180053859
- Publication date Feb 22, 2018
- Samsung Electronics Co., Ltd.
- Wei-E Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IONIC BARRISTOR
- Publication number 20170229576
- Publication date Aug 10, 2017
- Board of Regents, The University of Texas System
- Kyeongjae CHO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYNTHESIZING GRAPHENE FROM METAL-CARBON SOLUTIONS USING ION IMPLANT...
- Publication number 20130026444
- Publication date Jan 31, 2013
- Texas Instruments, Inc.
- Luigi Colombo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYNTHESIZING GRAPHENE FROM METAL-CARBON SOLUTIONS USING ION IMPLANT...
- Publication number 20100224851
- Publication date Sep 9, 2010
- Board of Regents, The University of Texas System
- Luigi Colombo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High permittivity silicate gate dielectric
- Publication number 20050112827
- Publication date May 26, 2005
- John Mark Anthony
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for removing contaminants on a substrate
- Publication number 20040102009
- Publication date May 27, 2004
- REGENTS OF THE UNIVERSITY OF NORTH TEXAS
- Manuel A. Quevedo-Lopez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lower temperature method for forming high quality silicon-nitrogen...
- Publication number 20030207590
- Publication date Nov 6, 2003
- Glen D. Wilk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for using field emitter arrays in chemical and biological ha...
- Publication number 20030136660
- Publication date Jul 24, 2003
- Bruce A. Gnade
- A61 - MEDICAL OR VETERINARY SCIENCE HYGIENE
Information Patent Application
Gate structure and method
- Publication number 20030062586
- Publication date Apr 3, 2003
- Robert M. Wallace
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hafnium nitride gate dielectric
- Publication number 20020177293
- Publication date Nov 28, 2002
- Glen D. Wilk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated dielectric and method
- Publication number 20020025626
- Publication date Feb 28, 2002
- Sunil Hattangady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming metal oxide gate structures and capacitor electrodes
- Publication number 20010053593
- Publication date Dec 20, 2001
- Glen D. Wilk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High charge storage density integrated circuit capacitor
- Publication number 20010024853
- Publication date Sep 27, 2001
- Robert M. Wallace
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lower temperature method for forming high quality silicon-nitrogen...
- Publication number 20010023115
- Publication date Sep 20, 2001
- Glen D. Wilk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process to produce ultrathin crystalline silicon nitride on Si (111...
- Publication number 20010002709
- Publication date Jun 7, 2001
- Robert M. Wallace
- H01 - BASIC ELECTRIC ELEMENTS

Robert M. Wallace

Person

Patents Grantslast 30 patents

Metal oxide semiconductor field effect transistor with crystalline...

Method of forming crystalline oxides on III-V materials

Ionic barristor

Synthesizing graphene from metal-carbon solutions using ion implant...

Synthesizing graphene from metal-carbon solutions using ion implant...

Method for using field emitter arrays in chemical and biological ha...

High permittivity silicate gate dielectric

Low temperature method for forming a thin, uniform oxide

Method for removing contaminants on a substrate

Method of forming metal oxide gate structures and capacitor electrodes

High permittivity silicate gate dielectric

Gate structure and method

Lower temperature method for forming high quality silicon-nitrogen...

Fluorinated coating for an optical element

Lower temperature method for forming high quality silicon-nitrogen...

Hafnium nitride gate dielectric

High charge storage density integrated circuit capacitor

Hafnium nitride gate dielectric

Process to produce ultrathin crystalline silicon nitride on Si (111...

Integrated dielectric and method

Zirconium and/or hafnium silicon-oxynitride gate dielectric

Zirconium and/or hafnium oxynitride gate dielectric

Process to produce ultrathin crystalline silicon nitride on Si(111)...

Lower temperature method for forming high quality silicon-nitrogen...

Method for thin film deposition on single-crystal semiconductor sub...

Low temperature method for forming a thin, uniform layer of aluminu...

Memory device using movement of protons

Method of growing crystalline silicon overlayers on thin amorphous...

Semiconductor process with deuterium predominance at high temperature

Low temperature process for post-etch defluoridation of metals

Patents Applicationslast 30 patents

METHOD OF FORMING CRYSTALLINE OXIDES ON III-V MATERIALS

METHOD OF FORMING CRYSTALLINE OXIDES ON III-V MATERIALS

IONIC BARRISTOR

SYNTHESIZING GRAPHENE FROM METAL-CARBON SOLUTIONS USING ION IMPLANT...

SYNTHESIZING GRAPHENE FROM METAL-CARBON SOLUTIONS USING ION IMPLANT...

High permittivity silicate gate dielectric

Method for removing contaminants on a substrate

Lower temperature method for forming high quality silicon-nitrogen...

Method for using field emitter arrays in chemical and biological ha...

Gate structure and method

Hafnium nitride gate dielectric

Integrated dielectric and method

Method of forming metal oxide gate structures and capacitor electrodes

High charge storage density integrated circuit capacitor

Lower temperature method for forming high quality silicon-nitrogen...

Process to produce ultrathin crystalline silicon nitride on Si (111...