Claims
- 1. An integrated circuit, comprising:(a) MOS devices with metal silicate germanate gate dielectric where said metal is taken from the group consisting of Hf, Zr, and mixtures thereof; and (b) interconnections among said devices.
- 2. The integrated circuit of claim 1, wherein:(a) said MOS devices include PMOS devices with a Si—Ge channel region; and (b) said MOS devices include NMOS devices with a Si channel region.
- 3. The Integrated circuit of claim 1,wherein:(a) said gate dielectric has said metal equal Hf and the Hf—Ge—Si proportions as defined by the trapezoidal region of FIG. 2.
- 4. The integrated circuit of claim 1, wherein:(a) said gate dielectric has said metal equal Hf and the Hf—Ge—Si proportions as defined by the trapezoidal region of FIG. 4.
- 5. The integrated circuit of claim 1, further comprising:(a) bipolar devices with Si emitter material together with Si—Ge base material.
RELATED APPLICATIONS
This application claims priority from provisional patent application Ser. No. 60/325,519, filed Sep. 28, 2001. The following patent applications disclose related subject matter: Ser. Nos. 09/436,895, filed Nov. 9, 1999, now U.S. Pat. No. 6,291,283; Ser. No. 09/478,845, flied Jan. 7, 2000, now U.S. Pat. No. 6,544,875; Ser. No. 09/851,318, filed May 9, 2001; and Ser. No. 10/409,007, filed Apr. 8, 2003. These applications have a common assignee with the present application.
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Provisional Applications (1)
|
Number |
Date |
Country |
|
60/325519 |
Sep 2001 |
US |