Robert P. Strittmatter

Person

Pasadena, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
GaN transistors with polysilicon layers used for creating additiona...
- Patent number 10,312,260
- Issue date Jun 4, 2019
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-step surface passivation structures and methods for fabricati...
- Patent number 10,096,702
- Issue date Oct 9, 2018
- Efficient Power Conversion Corporation
- Robert Beach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Flip chip interconnection with reduced current density
- Patent number 10,090,274
- Issue date Oct 2, 2018
- Efficient Power Conversion Corporation
- Robert Strittmatter
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
GaN transistors with polysilicon layers used for creating additiona...
- Patent number 9,837,438
- Issue date Dec 5, 2017
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with matching threshold voltages and method for...
- Patent number 9,583,480
- Issue date Feb 28, 2017
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN device with reduced output capacitance and process for making same
- Patent number 9,331,191
- Issue date May 3, 2016
- Efficient Power Conversion Corporation
- Stephen L. Colino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN transistors with polysilicon layers for creating additional com...
- Patent number 9,214,461
- Issue date Dec 15, 2015
- Efficient Power Coversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with matching threshold voltages and method for...
- Patent number 9,214,399
- Issue date Dec 15, 2015
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to fabricate self-aligned isolation in gallium nitride devic...
- Patent number 9,214,528
- Issue date Dec 15, 2015
- Efficient Power Conversion Corporation
- Chunhua Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation structure in gallium nitride devices and integrated circuits
- Patent number 9,171,911
- Issue date Oct 27, 2015
- Efficient Power Conversion Corporation
- Chunhua Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion implanted and self aligned gate structure for GaN transistors
- Patent number 8,853,749
- Issue date Oct 7, 2014
- Efficient Power Conversion Corporation
- Alexander Lidow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement mode GaN HEMT device with gate spacer and method for fa...
- Patent number 8,823,012
- Issue date Sep 2, 2014
- Efficient Power Conversion Corporation
- Alexander Lidow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Piezoelectrically enhanced photocathode
- Patent number 7,592,747
- Issue date Sep 22, 2009
- The United States of America as represented by the National Aeronautics and S...
- Robert A. Beach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated micropump analysis chip and method of making the same
- Patent number 7,189,358
- Issue date Mar 13, 2007
- California Institute of Technology
- Robert A. Beach
- F04 - POSITIVE DISPLACEMENT MACHINES FOR LIQUIDS PUMPS FOR LIQUIDS OR ELASTIC...
Information Patent Grant
Semiconductor nitride pressure microsensor and method of making and...
- Patent number 6,647,796
- Issue date Nov 18, 2003
- California Institue of Technology
- Robert A. Beach
- G01 - MEASURING TESTING
Information Patent Grant
Method of manufacture of a suspended nitride membrane and a micrope...
- Patent number 6,579,068
- Issue date Jun 17, 2003
- California Institute of Technology
- Paul M. Bridger
- F04 - POSITIVE DISPLACEMENT MACHINES FOR LIQUIDS PUMPS FOR LIQUIDS OR ELASTIC...

Patents Applicationslast 30 patents

Information Patent Application
GaN TRANSISTOR HAVING MULTI-THICKNESS FRONT BARRIER
- Publication number 20240413205
- Publication date Dec 12, 2024
- Efficient Power Conversion Corporation
- Robert Beach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN DEVICE WITH HOLE ELIMINATION CENTERS
- Publication number 20240274681
- Publication date Aug 15, 2024
- Efficient Power Conversion Corporation
- Robert Strittmatter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN DEVICE WITH UNIFORM ELECTRIC FIELD
- Publication number 20240234521
- Publication date Jul 11, 2024
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-STEP SURFACE PASSIVATION STRUCTURES AND METHODS FOR FABRICATI...
- Publication number 20170352754
- Publication date Dec 7, 2017
- Efficient Power Conversion Corporation
- Robert Beach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN TRANSISTORS WITH POLYSILICON LAYERS USED FOR CREATING ADDITIONA...
- Publication number 20170330898
- Publication date Nov 16, 2017
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT WITH MATCHING THRESHOLD VOLTAGES AND METHOD FOR...
- Publication number 20160111416
- Publication date Apr 21, 2016
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAN TRANSISTORS WITH POLYSILICON LAYERS USED FOR CREATING ADDITIONA...
- Publication number 20160086980
- Publication date Mar 24, 2016
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLIP CHIP INTERCONNECTION WITH REDUCED CURRENT DENSITY
- Publication number 20150270241
- Publication date Sep 24, 2015
- Efficient Power Conversion Corporation
- ROBERT STRITTMATTER
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Application
INTEGRATED CIRCUIT WITH MATCHING THRESHOLD VOLTAGES AND METHOD FOR...
- Publication number 20150034962
- Publication date Feb 5, 2015
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN TRANSISTORS WITH POLYSILICON LAYERS FOR CREATING ADDITIONAL COM...
- Publication number 20150028384
- Publication date Jan 29, 2015
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN DEVICE WITH REDUCED OUTPUT CAPACITANCE AND PROCESS FOR MAKING SAME
- Publication number 20150028390
- Publication date Jan 29, 2015
- Efficient Power Conversion Corporation
- Stephen L. Colino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION STRUCTURE IN GALLIUM NITRIDE DEVICES AND INTEGRATED CIRCUITS
- Publication number 20150008442
- Publication date Jan 8, 2015
- Efficient Power Conversion Corporation
- Chunhua Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO FABRICATE SELF-ALIGNED ISOLATION IN GALLIUM NITRIDE DEVIC...
- Publication number 20150011057
- Publication date Jan 8, 2015
- Efficient Power Conversion Corporation
- Chunhua Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ION IMPLANTED AND SELF ALIGNED GATE STRUCTURE FOR GaN TRANSISTORS
- Publication number 20120193688
- Publication date Aug 2, 2012
- Alexander Lidow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCEMENT MODE GaN HEMT DEVICE WITH GATE SPACER AND METHOD FOR FA...
- Publication number 20120175631
- Publication date Jul 12, 2012
- Alexander Lidow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated micropump analysis chip and method of making the same
- Publication number 20020071785
- Publication date Jun 13, 2002
- Robert A. Beach
- B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
Information Patent Application
Method of manufacture of a suspended nitride membrane and a micrope...
- Publication number 20020067992
- Publication date Jun 6, 2002
- Paul M. Bridger
- F04 - POSITIVE DISPLACEMENT MACHINES FOR LIQUIDS PUMPS FOR LIQUIDS OR ELASTIC...
Information Patent Application
Semiconductor nitride pressure microsensor and method of making and...
- Publication number 20020066319
- Publication date Jun 6, 2002
- Robert A. Beach
- G01 - MEASURING TESTING

Robert P. Strittmatter

Person

Patents Grantslast 30 patents

GaN transistors with polysilicon layers used for creating additiona...

Multi-step surface passivation structures and methods for fabricati...

Flip chip interconnection with reduced current density

GaN transistors with polysilicon layers used for creating additiona...

Integrated circuit with matching threshold voltages and method for...

GaN device with reduced output capacitance and process for making same

GaN transistors with polysilicon layers for creating additional com...

Integrated circuit with matching threshold voltages and method for...

Method to fabricate self-aligned isolation in gallium nitride devic...

Isolation structure in gallium nitride devices and integrated circuits

Ion implanted and self aligned gate structure for GaN transistors

Enhancement mode GaN HEMT device with gate spacer and method for fa...

Piezoelectrically enhanced photocathode

Integrated micropump analysis chip and method of making the same

Semiconductor nitride pressure microsensor and method of making and...

Method of manufacture of a suspended nitride membrane and a micrope...

Patents Applicationslast 30 patents

GaN TRANSISTOR HAVING MULTI-THICKNESS FRONT BARRIER

GaN DEVICE WITH HOLE ELIMINATION CENTERS

GaN DEVICE WITH UNIFORM ELECTRIC FIELD

MULTI-STEP SURFACE PASSIVATION STRUCTURES AND METHODS FOR FABRICATI...

GaN TRANSISTORS WITH POLYSILICON LAYERS USED FOR CREATING ADDITIONA...

INTEGRATED CIRCUIT WITH MATCHING THRESHOLD VOLTAGES AND METHOD FOR...

GAN TRANSISTORS WITH POLYSILICON LAYERS USED FOR CREATING ADDITIONA...

FLIP CHIP INTERCONNECTION WITH REDUCED CURRENT DENSITY

INTEGRATED CIRCUIT WITH MATCHING THRESHOLD VOLTAGES AND METHOD FOR...

GaN TRANSISTORS WITH POLYSILICON LAYERS FOR CREATING ADDITIONAL COM...

GaN DEVICE WITH REDUCED OUTPUT CAPACITANCE AND PROCESS FOR MAKING SAME

ISOLATION STRUCTURE IN GALLIUM NITRIDE DEVICES AND INTEGRATED CIRCUITS

METHOD TO FABRICATE SELF-ALIGNED ISOLATION IN GALLIUM NITRIDE DEVIC...

ION IMPLANTED AND SELF ALIGNED GATE STRUCTURE FOR GaN TRANSISTORS

ENHANCEMENT MODE GaN HEMT DEVICE WITH GATE SPACER AND METHOD FOR FA...

Integrated micropump analysis chip and method of making the same

Method of manufacture of a suspended nitride membrane and a micrope...

Semiconductor nitride pressure microsensor and method of making and...