Roda Kanawati

Person

Irvine, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Field effect transistors with reduced leakage current
- Patent number 11,955,555
- Issue date Apr 9, 2024
- Newport Fab, LLC
- Rula Badarneh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing body-source-tied SOI transistor
- Patent number 11,756,823
- Issue date Sep 12, 2023
- Newport Fab, LLC
- Allan K Calvo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Body-source-tied semiconductor-on-insulator (SOI) transistor
- Patent number 11,581,215
- Issue date Feb 14, 2023
- Newport Fab, LLC
- Allan K Calvo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked phase-change material (PCM) radio frequency (RF) switches w...
- Patent number 10,916,585
- Issue date Feb 9, 2021
- Newport Fab, LLC
- Nabil El-Hinnawy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radio frequency (RF) switch with improved power handling
- Patent number 10,686,486
- Issue date Jun 16, 2020
- Newport Fab, LLC
- Roda Kanawati
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Silicide block isolation for reducing off-capacitance of a radio fr...
- Patent number 10,672,885
- Issue date Jun 2, 2020
- Newport Fab, LLC
- Roda Kanawati
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bi-directional electrostatic discharge protection device for radio...
- Patent number 10,587,114
- Issue date Mar 10, 2020
- Newport Fab, LLC
- Roda Kanawati
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
High power RF switches using multiple optimized transistors and met...
- Patent number 10,587,233
- Issue date Mar 10, 2020
- Newport Fab, LLC
- Paul D. Hurwitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wide contact structure for small footprint radio frequency (RF) switch
- Patent number 10,586,870
- Issue date Mar 10, 2020
- Newport Fab, LLC
- Roda Kanawati
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dynamic impedance circuit for uniform voltage distribution in a hig...
- Patent number 10,530,357
- Issue date Jan 7, 2020
- Newport Fab, LLC
- Roda Kanawati
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-linear shunt circuit for third order harmonic reduction in RF s...
- Patent number 10,469,121
- Issue date Nov 5, 2019
- Newport Fab, LLC
- Paul D. Hurwitz
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Bent polysilicon gate structure for small footprint radio frequency...
- Patent number 10,325,833
- Issue date Jun 18, 2019
- Newport Fab, LLC
- Roda Kanawati
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High power RF switches using multiple optimized transistors
- Patent number 10,044,331
- Issue date Aug 7, 2018
- Newport Fab, LLC
- Paul D. Hurwitz
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Tapered polysilicon gate layout for power handling improvement for...
- Patent number 10,014,366
- Issue date Jul 3, 2018
- Newport Fab, LLC
- Roda Kanawati
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor device having reduced drain-to-source capacitance
- Patent number 9,608,079
- Issue date Mar 28, 2017
- Newport Fab, LLC
- Paul D. Hurwitz
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MULTI VOLTAGE-DOMAIN ELECTRO STATIC DISCHARGE (ESD) POWER CLAMP
- Publication number 20240170958
- Publication date May 23, 2024
- Tower Semiconductor Ltd.
- Efraim Aharoni
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
Field Effect Transistors with Reduced Leakage Current
- Publication number 20230395722
- Publication date Dec 7, 2023
- Newport Fab, LLC dba Tower Semiconductor Newport Beach
- Rula BADARNEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Body-Source-Tied Transistor
- Publication number 20230128785
- Publication date Apr 27, 2023
- NEWPORT FAB, LLC DBA JAZZ SEMICONDUCTOR
- Allan K. Calvo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method For Manufacturing Body-Source-Tied SOI Transistor
- Publication number 20220352007
- Publication date Nov 3, 2022
- NEWPORT FAB, LLC DBA JAZZ SEMICONDUCTOR
- Allan K. Calvo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Body-Source-Tied Semiconductor-On-Insulator (SOI) Transistor
- Publication number 20220020633
- Publication date Jan 20, 2022
- Newport Fab, LLC dba Jazz Semiconductor.
- Allan K. Calvo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Stacked Phase-Change Material (PCM) Radio Frequency (RF) Switches w...
- Publication number 20200058706
- Publication date Feb 20, 2020
- Newport Fab, LLC dba Jazz Semiconductor.
- Nabil El-Hinnawy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIDE CONTACT STRUCTURE FOR SMALL FOOTPRINT RADIO FREQUENCY (RF) SWITCH
- Publication number 20190259880
- Publication date Aug 22, 2019
- Newport Fab, LLC dba Jazz Semiconductor, Inc.
- Roda Kanawati
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicide Block Isolation For Reducing Off-Capacitance of A Radio Fr...
- Publication number 20190123166
- Publication date Apr 25, 2019
- Newport Fab, LLC dba Jazz Semiconductor, Inc.
- Roda Kanawati
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-linear Shunt Circuit For Third Order Harmonic Reduction In RF S...
- Publication number 20190089398
- Publication date Mar 21, 2019
- Newport Fab, LLC dba Jazz Semiconductor, Inc.
- Paul D. Hurwitz
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
Bi-directional Electrostatic Discharge Protection Device For Radio...
- Publication number 20180337170
- Publication date Nov 22, 2018
- Newport Fab, LLC dba Jazz Semiconductor, Inc.
- Roda Kanawati
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
HIGH POWER RF SWITCHES USING MULTIPLE OPTIMIZED TRANSISTORS
- Publication number 20180323757
- Publication date Nov 8, 2018
- Newport Fab, LLC dba Jazz Semiconductor, Inc.
- Paul D. Hurwitz
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Thin Polysilicon For Lower Off-Capacitance Of A Radio Frequency (RF...
- Publication number 20180269230
- Publication date Sep 20, 2018
- Newport Fab, LLC dba Jazz Semiconductor, Inc.
- Roda Kanawati
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH POWER RF SWITCHES USING MULTIPLE OPTIMIZED TRANSISTORS
- Publication number 20160365850
- Publication date Dec 15, 2016
- Newport Fab, LLC dba Jazz Semiconductor, Inc.
- Paul D. Hurwitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having Reduced Drain-To-Source Capacitance
- Publication number 20160343813
- Publication date Nov 24, 2016
- NEWPORT FAB, LLC DBA JAZZ SEMICONDUCTOR
- Paul D. Hurwitz
- H01 - BASIC ELECTRIC ELEMENTS

Roda Kanawati

Person

Patents Grantslast 30 patents

Field effect transistors with reduced leakage current

Method for manufacturing body-source-tied SOI transistor

Body-source-tied semiconductor-on-insulator (SOI) transistor

Stacked phase-change material (PCM) radio frequency (RF) switches w...

Radio frequency (RF) switch with improved power handling

Silicide block isolation for reducing off-capacitance of a radio fr...

Bi-directional electrostatic discharge protection device for radio...

High power RF switches using multiple optimized transistors and met...

Wide contact structure for small footprint radio frequency (RF) switch

Dynamic impedance circuit for uniform voltage distribution in a hig...

Non-linear shunt circuit for third order harmonic reduction in RF s...

Bent polysilicon gate structure for small footprint radio frequency...

High power RF switches using multiple optimized transistors

Tapered polysilicon gate layout for power handling improvement for...

Semiconductor device having reduced drain-to-source capacitance

Patents Applicationslast 30 patents

MULTI VOLTAGE-DOMAIN ELECTRO STATIC DISCHARGE (ESD) POWER CLAMP

Field Effect Transistors with Reduced Leakage Current

Body-Source-Tied Transistor

Method For Manufacturing Body-Source-Tied SOI Transistor

Body-Source-Tied Semiconductor-On-Insulator (SOI) Transistor

Stacked Phase-Change Material (PCM) Radio Frequency (RF) Switches w...

WIDE CONTACT STRUCTURE FOR SMALL FOOTPRINT RADIO FREQUENCY (RF) SWITCH

Silicide Block Isolation For Reducing Off-Capacitance of A Radio Fr...

Non-linear Shunt Circuit For Third Order Harmonic Reduction In RF S...

Bi-directional Electrostatic Discharge Protection Device For Radio...

HIGH POWER RF SWITCHES USING MULTIPLE OPTIMIZED TRANSISTORS

Thin Polysilicon For Lower Off-Capacitance Of A Radio Frequency (RF...

HIGH POWER RF SWITCHES USING MULTIPLE OPTIMIZED TRANSISTORS

Semiconductor Device Having Reduced Drain-To-Source Capacitance