Roger A. Haken

Person

Dallas, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Silicided MOS transistor
- Patent number 5,389,809
- Issue date Feb 14, 1995
- Texas Instruments Incorporated
- Roger A. Haken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DRAM process with improved polysilicon-to-polysilicon capacitor and...
- Patent number 5,359,216
- Issue date Oct 25, 1994
- Texas Instruments Incorporated
- Donald J. Coleman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
VLSI interconnect method and structure
- Patent number 5,302,539
- Issue date Apr 12, 1994
- Texas Instruments Incorporated
- Roger A. Haken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Floating gate memory with improved dielectric
- Patent number RE34535
- Issue date Feb 8, 1994
- Texas Instruments Incorporated
- James L. Paterson
- 365 - Static information storage and retrieval
Information Patent Grant
DRAM process with improved poly-to-poly capacitor
- Patent number 5,244,825
- Issue date Sep 14, 1993
- Texas Instruments Incorporated
- Donald J. Coleman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS sidewall oxide-lightly doped drain process
- Patent number 5,141,890
- Issue date Aug 25, 1992
- Texas Instruments Incorporated
- Roger A. Haken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bistable logic device using trench transistors
- Patent number 5,122,846
- Issue date Jun 16, 1992
- Texas Instruments Incorporated
- Roger A. Haken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DRAM with improved poly-to-poly capacitor
- Patent number 5,098,192
- Issue date Mar 24, 1992
- Texas Instruments Incorporated
- Donald J. Coleman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for simultaneous formation of trench contact and vertical t...
- Patent number 5,077,228
- Issue date Dec 31, 1991
- Texas Instruments Incorporated
- Robert H. Eklund
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual LDD submicron CMOS process for making low and high voltage tra...
- Patent number 5,024,960
- Issue date Jun 18, 1991
- Texas Instruments Incorporated
- Roger A. Haken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
NMOS source/drain doping with both P and As
- Patent number 5,021,851
- Issue date Jun 4, 1991
- Texas Instruments Incorporated
- Roger A. Haken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for making CMOS device with both P+ and N+ gates including...
- Patent number 5,010,032
- Issue date Apr 23, 1991
- Texas Instruments Incorporated
- Thomas E. Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Through-field implant isolated devices and method
- Patent number 4,987,093
- Issue date Jan 22, 1991
- Texas Instruments Incorporated
- Clarence W. Teng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SRAM with local interconnect
- Patent number 4,975,756
- Issue date Dec 4, 1990
- Texas Instruments Incorporated
- Roger A. Haken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin dielectrics over polysilicon
- Patent number 4,949,154
- Issue date Aug 14, 1990
- Texas Instruments, Incorporated
- Roger A. Haken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit process with TiN-gate transistor
- Patent number 4,931,411
- Issue date Jun 5, 1990
- Texas Instruments Incorporated
- Howard L. Tigelaar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DRAM process with improved polysilicon-to-polysilicon capacitor and...
- Patent number 4,922,312
- Issue date May 1, 1990
- Texas Instruments Incorporated
- Donald J. Coleman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single-polysilicon dram device and process
- Patent number 4,894,693
- Issue date Jan 16, 1990
- Howard L. Tigelaar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS device with both p+ and n+ gates
- Patent number 4,890,141
- Issue date Dec 26, 1989
- Texas Instruments Incorporated
- Thomas E. Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Through-field implant isolated devices and method
- Patent number 4,890,147
- Issue date Dec 26, 1989
- Texas Instruments Incorporated
- Clarence W. Teng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
NMOS source/drain doping with both P and As
- Patent number 4,851,360
- Issue date Jul 25, 1989
- Texas Instruments Incorporated
- Roger A. Haken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold adjustment method for an IGFET
- Patent number 4,845,047
- Issue date Jul 4, 1989
- Texas Instruments Incorporated
- Thomas C. Holloway
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
VLSI local interconnect structure
- Patent number 4,821,085
- Issue date Apr 11, 1989
- Texas Instruments Incorporated
- Roger A. Haken
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device and process with tin-gate transistor
- Patent number 4,814,854
- Issue date Mar 21, 1989
- Texas Instruments Incorporated
- Howard L. Tigelaar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit device and process with tin capacitors
- Patent number 4,811,078
- Issue date Mar 7, 1989
- Texas Instruments Incorporated
- Howard L. Tigelaar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device and process with doubled capacitors
- Patent number 4,811,076
- Issue date Mar 7, 1989
- Texas Instruments Incorporated
- Howard L. Tigelaar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for making integrated circuits having titanium nitride trip...
- Patent number 4,804,636
- Issue date Feb 14, 1989
- Texas Instruments Incorporated
- Robert Groover
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for formation of shallow silicided junctions
- Patent number 4,788,160
- Issue date Nov 29, 1988
- Texas Instruments Incorporated
- Robert H. Havemann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Local interconnect
- Patent number 4,746,219
- Issue date May 24, 1988
- Texas Instruments Incorporated
- Thomas C. Holloway
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxide-capped titanium silicide formation
- Patent number 4,690,730
- Issue date Sep 1, 1987
- Texas Instruments Incorporated
- Thomas E. Tang
- H01 - BASIC ELECTRIC ELEMENTS

Roger A. Haken

Person

Patents Grantslast 30 patents

Silicided MOS transistor

DRAM process with improved polysilicon-to-polysilicon capacitor and...

VLSI interconnect method and structure

Floating gate memory with improved dielectric

DRAM process with improved poly-to-poly capacitor

CMOS sidewall oxide-lightly doped drain process

Bistable logic device using trench transistors

DRAM with improved poly-to-poly capacitor

Process for simultaneous formation of trench contact and vertical t...

Dual LDD submicron CMOS process for making low and high voltage tra...

NMOS source/drain doping with both P and As

Process for making CMOS device with both P+ and N+ gates including...

Through-field implant isolated devices and method

SRAM with local interconnect

Thin dielectrics over polysilicon

Integrated circuit process with TiN-gate transistor

DRAM process with improved polysilicon-to-polysilicon capacitor and...

Single-polysilicon dram device and process

CMOS device with both p+ and n+ gates

Through-field implant isolated devices and method

NMOS source/drain doping with both P and As

Threshold adjustment method for an IGFET

VLSI local interconnect structure

Integrated circuit device and process with tin-gate transistor

Integrated circuit device and process with tin capacitors

Device and process with doubled capacitors

Process for making integrated circuits having titanium nitride trip...

Process for formation of shallow silicided junctions

Local interconnect

Oxide-capped titanium silicide formation