Ron Weimer

Person

Boise, ID, US

People

Patents Grantslast 30 patents

Information Patent Grant
Thickened sidewall dielectric for memory cell
- Patent number 11,257,838
- Issue date Feb 22, 2022
- Micron Technology, Inc.
- Ronald A. Weimer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual-layer dielectric in memory device
- Patent number 10,629,652
- Issue date Apr 21, 2020
- Intel Corporation
- Michael J. Bernhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thickened sidewall dielectric for memory cell
- Patent number 10,608,005
- Issue date Mar 31, 2020
- Micron Technology, Inc.
- Ronald A. Weimer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual-layer dielectric in memory device
- Patent number 10,134,809
- Issue date Nov 20, 2018
- Intel Corporation
- Michael J. Bernhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual-layer dielectric in memory device
- Patent number 9,704,923
- Issue date Jul 11, 2017
- Intel Corporation
- Michael J. Bernhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming air gaps in memory arrays and memory arrays with air gaps t...
- Patent number 9,397,210
- Issue date Jul 19, 2016
- Micron Technology, Inc.
- James Mathew
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Use of etch process post wordline definition to improve data retent...
- Patent number 9,082,714
- Issue date Jul 14, 2015
- Intel Corporation
- Randy J. Koval
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thickened sidewall dielectric for memory cell
- Patent number 8,643,082
- Issue date Feb 4, 2014
- Micron Technology, Inc.
- Ron Weimer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming air gaps in memory arrays and memory arrays with air gaps t...
- Patent number 8,569,130
- Issue date Oct 29, 2013
- Micron Technology, Inc.
- James Mathew
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and systems for controlling temperature during microfeature...
- Patent number 8,518,184
- Issue date Aug 27, 2013
- Micron Technology, Inc.
- Kevin L. Beaman
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Methods for forming small-scale capacitor structures
- Patent number 8,384,192
- Issue date Feb 26, 2013
- Micron Technology, Inc.
- Lingyi A. Zheng
- G05 - CONTROLLING REGULATING
Information Patent Grant
Use of dilute steam ambient for improvement of flash devices
- Patent number 8,294,192
- Issue date Oct 23, 2012
- Micron Technology, Inc.
- Ronald A. Weimer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cells containing charge-trapping zones
- Patent number 8,228,743
- Issue date Jul 24, 2012
- Micron Technology, Inc.
- Kyu S. Min
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Methods for filling trenches in a semiconductor material
- Patent number 8,153,502
- Issue date Apr 10, 2012
- Micron Technology, Inc.
- Li Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming memory cells
- Patent number 8,119,483
- Issue date Feb 21, 2012
- Micron Technology, Inc.
- Ronald A. Weimer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thickened sidewall dielectric for memory cell
- Patent number 8,058,140
- Issue date Nov 15, 2011
- Micron Technology, Inc.
- Ron Weimer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Use of dilute steam ambient for improvement of flash devices
- Patent number 7,989,870
- Issue date Aug 2, 2011
- Micron Technology, Inc.
- Ronald A. Weimer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming non-volatile memory cells, and methods of formin...
- Patent number 7,915,126
- Issue date Mar 29, 2011
- Micron Technology, Inc.
- Ronald A. Weimer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming small-scale capacitor structures
- Patent number 7,906,393
- Issue date Mar 15, 2011
- Micron Technology, Inc.
- Lingyi A. Zheng
- G05 - CONTROLLING REGULATING
Information Patent Grant
Memory cells, electronic systems, methods of forming memory cells,...
- Patent number 7,898,850
- Issue date Mar 1, 2011
- Micron Technology, Inc.
- Kyu S. Min
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Methods and systems for controlling temperature during microfeature...
- Patent number 7,771,537
- Issue date Aug 10, 2010
- Micron Technology, Inc.
- Kevin L. Beaman
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Thickened sidewall dielectric for memory cell
- Patent number 7,705,389
- Issue date Apr 27, 2010
- Micron Technology, Inc.
- Ron Weimer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming programmable memory devices
- Patent number 7,651,910
- Issue date Jan 26, 2010
- Micron Technology, Inc.
- Kevin L. Beaman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems for depositing material onto workpieces in reaction chamber...
- Patent number 7,647,886
- Issue date Jan 19, 2010
- Micron Technology, Inc.
- David J. Kubista
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Use of dilute steam ambient for improvement of flash devices
- Patent number 7,585,725
- Issue date Sep 8, 2009
- Micron Technology, Inc.
- Ronald A. Weimer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ampoules for producing a reaction gas and systems for depositing ma...
- Patent number 7,584,942
- Issue date Sep 8, 2009
- Micron Technology, Inc.
- Dan Gealy
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of composite gate formation
- Patent number 7,576,398
- Issue date Aug 18, 2009
- Micron Technology, Inc.
- Ronald A. Weimer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitor structures with oxynitride layer between capacitor plate...
- Patent number 7,489,000
- Issue date Feb 10, 2009
- Micron Technology Inc.
- Ronald A. Weimer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of improved high K dielectric-polysilicon interface for CMOS...
- Patent number 7,470,583
- Issue date Dec 30, 2008
- Micron Technology, Inc.
- Ronald A. Weimer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus having a memory device with floating gate layer grain bou...
- Patent number 7,432,546
- Issue date Oct 7, 2008
- Micron Technology, Inc.
- Ronald A. Weimer
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ACTIVE AREA SALICIDATION FOR NMOS AND PMOS DEVICES
- Publication number 20240071832
- Publication date Feb 29, 2024
- Micron Technology, Inc.
- Ronald Allen Weimer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICIDE TRANSISTOR DEVICE AND METHOD
- Publication number 20240064987
- Publication date Feb 22, 2024
- Micron Technology, Inc.
- Toshihiko Miyashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thickened Sidewall Dielectric for Memory Cell
- Publication number 20200203360
- Publication date Jun 25, 2020
- Micron Technology, Inc.
- Ronald A. Weimer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL-LAYER DIELECTRIC IN MEMORY DEVICE
- Publication number 20190206942
- Publication date Jul 4, 2019
- Intel Corporation
- Michael J. Bernhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL-LAYER DIELECTRIC IN MEMORY DEVICE
- Publication number 20170271412
- Publication date Sep 21, 2017
- Intel Corporation
- Michael J. Bernhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual-layer dielectric in memory device
- Publication number 20170186815
- Publication date Jun 29, 2017
- Intel Corporation
- Michael J. Bernhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THICKENED SIDEWALL DIELECTRIC FOR MEMORY CELL
- Publication number 20140159136
- Publication date Jun 12, 2014
- Micron Technology, Inc.
- Ron Weimer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING AIR GAPS IN MEMORY ARRAYS AND MEMORY ARRAYS WITH AIR GAPS T...
- Publication number 20140027832
- Publication date Jan 30, 2014
- Micron Technology, Inc.
- James Mathew
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
USE OF ETCH PROCESS POST WORDLINE DEFINITION TO IMPROVE DATA RETENT...
- Publication number 20130264628
- Publication date Oct 10, 2013
- Randy J. Koval
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING SMALL-SCALE CAPACITOR STRUCTURES
- Publication number 20130166057
- Publication date Jun 27, 2013
- Micron Technology, Inc.
- Lingyi A. Zheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING AIR GAPS IN MEMORY ARRAYS AND MEMORY ARRAYS WITH AIR GAPS T...
- Publication number 20130026600
- Publication date Jan 31, 2013
- Micron Technology, Inc.
- James Matthew
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THICKENED SIDEWALL DIELECTRIC FOR MEMORY CELL
- Publication number 20120032252
- Publication date Feb 9, 2012
- Micron Technology, Inc.
- Ron Weimer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
USE OF DILUTE STEAM AMBIENT FOR IMPROVEMENT OF FLASH DEVICES
- Publication number 20110254075
- Publication date Oct 20, 2011
- Micron Technology, Inc.
- Ronald A. Weimer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING SMALL-SCALE CAPACITOR STRUCTURES
- Publication number 20110163416
- Publication date Jul 7, 2011
- Micron Technology, Inc.
- Lingyi A. Zheng
- G05 - CONTROLLING REGULATING
Information Patent Application
Methods Of Forming Memory Cells
- Publication number 20110147826
- Publication date Jun 23, 2011
- Micron Technology, Inc.
- Ronald A. Weimer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Cells
- Publication number 20110133268
- Publication date Jun 9, 2011
- Micron Technology, Inc.
- Kyu S. Min
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS AND SYSTEMS FOR CONTROLLING TEMPERATURE DURING MICROFEATURE...
- Publication number 20100282164
- Publication date Nov 11, 2010
- Micron Technology, Inc.
- Kevin L. Beaman
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
THICKENED SIDEWALL DIELECTRIC FOR MEMORY CELL
- Publication number 20100197131
- Publication date Aug 5, 2010
- Micron Technology, Inc.
- Ron Weimer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
USE OF DILUTE STEAM AMBIENT FOR IMPROVEMENT OF FLASH DEVICES
- Publication number 20100032746
- Publication date Feb 11, 2010
- Micron Technology, Inc.
- Ronald A. Weimer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Cells, Electronic Systems, Methods Of Forming Memory Cells,...
- Publication number 20090097320
- Publication date Apr 16, 2009
- Kyu S. Min
- G11 - INFORMATION STORAGE
Information Patent Application
THICKENED SIDEWALL DIELECTRIC FOR MEMORY CELL
- Publication number 20090057744
- Publication date Mar 5, 2009
- Micron Technology, Inc.
- Ron Weimer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
USE OF DILUTE STEAM AMBIENT FOR IMPROVEMENT OF FLASH DEVICES
- Publication number 20090004794
- Publication date Jan 1, 2009
- Micron Technology, Inc.
- Ronald A. Weimer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Deposition Apparatuses
- Publication number 20080245301
- Publication date Oct 9, 2008
- Ronald A. Weimer
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Methods of forming non-volatile memory cells, and methods of formin...
- Publication number 20080194066
- Publication date Aug 14, 2008
- Micron Technology, Inc.
- Ronald A. Weimer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for filling trenches in a semiconductor material
- Publication number 20070269958
- Publication date Nov 22, 2007
- Li Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of composite gate formation
- Publication number 20060289952
- Publication date Dec 28, 2006
- Micron Technology Inc.
- Ronald A. Weimer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of composite gate formation
- Publication number 20060289951
- Publication date Dec 28, 2006
- Micron Technology Inc.
- Ronald A. Weimer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of composite gate formation
- Publication number 20060289949
- Publication date Dec 28, 2006
- Micron Technology Inc.
- Ronald A. Weimer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of composite gate formation
- Publication number 20060289950
- Publication date Dec 28, 2006
- Micron Technology Inc.
- Ronald A. Weimer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING DEVICES COMPRISING CONDUCTIVE NANO-DOTS, AN...
- Publication number 20060273376
- Publication date Dec 7, 2006
- Ronald A. Weimer
- B82 - NANO-TECHNOLOGY

Person

Patents Grantslast 30 patents

Thickened sidewall dielectric for memory cell

Dual-layer dielectric in memory device

Thickened sidewall dielectric for memory cell

Dual-layer dielectric in memory device

Dual-layer dielectric in memory device

Forming air gaps in memory arrays and memory arrays with air gaps t...

Use of etch process post wordline definition to improve data retent...

Thickened sidewall dielectric for memory cell

Forming air gaps in memory arrays and memory arrays with air gaps t...

Methods and systems for controlling temperature during microfeature...

Methods for forming small-scale capacitor structures

Use of dilute steam ambient for improvement of flash devices

Memory cells containing charge-trapping zones

Methods for filling trenches in a semiconductor material

Methods of forming memory cells

Thickened sidewall dielectric for memory cell

Use of dilute steam ambient for improvement of flash devices

Methods of forming non-volatile memory cells, and methods of formin...

Methods for forming small-scale capacitor structures

Memory cells, electronic systems, methods of forming memory cells,...

Methods and systems for controlling temperature during microfeature...

Thickened sidewall dielectric for memory cell

Methods of forming programmable memory devices

Systems for depositing material onto workpieces in reaction chamber...

Use of dilute steam ambient for improvement of flash devices

Ampoules for producing a reaction gas and systems for depositing ma...

Method of composite gate formation

Capacitor structures with oxynitride layer between capacitor plate...

Method of improved high K dielectric-polysilicon interface for CMOS...

Apparatus having a memory device with floating gate layer grain bou...

Patents Applicationslast 30 patents

ACTIVE AREA SALICIDATION FOR NMOS AND PMOS DEVICES

SILICIDE TRANSISTOR DEVICE AND METHOD

Thickened Sidewall Dielectric for Memory Cell

DUAL-LAYER DIELECTRIC IN MEMORY DEVICE

DUAL-LAYER DIELECTRIC IN MEMORY DEVICE

Dual-layer dielectric in memory device

THICKENED SIDEWALL DIELECTRIC FOR MEMORY CELL

FORMING AIR GAPS IN MEMORY ARRAYS AND MEMORY ARRAYS WITH AIR GAPS T...

USE OF ETCH PROCESS POST WORDLINE DEFINITION TO IMPROVE DATA RETENT...

METHODS FOR FORMING SMALL-SCALE CAPACITOR STRUCTURES

FORMING AIR GAPS IN MEMORY ARRAYS AND MEMORY ARRAYS WITH AIR GAPS T...

THICKENED SIDEWALL DIELECTRIC FOR MEMORY CELL

USE OF DILUTE STEAM AMBIENT FOR IMPROVEMENT OF FLASH DEVICES

METHODS FOR FORMING SMALL-SCALE CAPACITOR STRUCTURES

Methods Of Forming Memory Cells

Memory Cells

METHODS AND SYSTEMS FOR CONTROLLING TEMPERATURE DURING MICROFEATURE...

THICKENED SIDEWALL DIELECTRIC FOR MEMORY CELL

USE OF DILUTE STEAM AMBIENT FOR IMPROVEMENT OF FLASH DEVICES

Memory Cells, Electronic Systems, Methods Of Forming Memory Cells,...

THICKENED SIDEWALL DIELECTRIC FOR MEMORY CELL

USE OF DILUTE STEAM AMBIENT FOR IMPROVEMENT OF FLASH DEVICES

Deposition Apparatuses

Methods of forming non-volatile memory cells, and methods of formin...

Methods for filling trenches in a semiconductor material

Method of composite gate formation

Method of composite gate formation

Method of composite gate formation

Method of composite gate formation

METHOD OF MANUFACTURING DEVICES COMPRISING CONDUCTIVE NANO-DOTS, AN...