Ryo Hattori

Person

Itami-shi, Hyogo 664, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing silicon carbide epitaxial wafer
- Patent number 10,229,830
- Issue date Mar 12, 2019
- Mitsubishi Electric Corporation
- Kenichi Hamano
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Film thickness measurement method
- Patent number 9,400,172
- Issue date Jul 26, 2016
- Mitsubishi Electric Corporation
- Ryo Hattori
- G01 - MEASURING TESTING
Information Patent Grant
Method and apparatus for manufacturing a SiC single crystal film
- Patent number 8,492,774
- Issue date Jul 23, 2013
- Nippon Steel & Sumitomo Metal Corporation
- Kazuhiko Kusunoki
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Silicon nitride film forming method
- Patent number 7,704,556
- Issue date Apr 27, 2010
- Canon Anelva Corporation
- Hitoshi Morisaki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device with polymer insulation of some electrodes
- Patent number 7,042,053
- Issue date May 9, 2006
- Mitsubishi Denki Kabushiki Kaisha
- Tetsuo Kunii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for manufacturing a semiconductor device
- Patent number 6,933,250
- Issue date Aug 23, 2005
- Mitsubishi Denki Kabushiki Kaisha
- Masahiro Totsuka
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for evaluating a crystalline semiconductor substrate
- Patent number 6,819,119
- Issue date Nov 16, 2004
- Mitsubishi Denki Kabushiki Kaisha
- Yoshitsugu Yamamoto
- G01 - MEASURING TESTING
Information Patent Grant
Sample assembly for thermoelectric analyzer
- Patent number 6,791,335
- Issue date Sep 14, 2004
- Rigaku Corporation
- Taisei Hirayama
- G01 - MEASURING TESTING
Information Patent Grant
Method for measuring surface leakage current of sample
- Patent number 6,570,390
- Issue date May 27, 2003
- Rigaku Corporation
- Taisei Hirayama
- G01 - MEASURING TESTING
Information Patent Grant
Field effect semiconductor device
- Patent number 6,355,951
- Issue date Mar 12, 2002
- Mitsubishi Denki Kabushiki Kaisha
- Ryo Hattori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V heterojunction bipolar transistor having a GaAs emitter ballast
- Patent number 6,043,520
- Issue date Mar 28, 2000
- Mitsubishi Denki Kabushiki Kaisha
- Yoshitsugu Yamamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including plated heat sink and airbridge for h...
- Patent number 5,864,169
- Issue date Jan 26, 1999
- Mitsubishi Denki Kabushiki Kaisha
- Teruyuki Shimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including ohmic contact to-n-type GaAs
- Patent number 5,777,389
- Issue date Jul 7, 1998
- Mitsubishi Denki Kabushiki Kaisha
- Ryo Hattori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor bipolar transistor
- Patent number 5,726,468
- Issue date Mar 10, 1998
- Mitsubishi Denki Kabushiki Kaisha
- Tomoki Oku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device electrode
- Patent number 5,693,560
- Issue date Dec 2, 1997
- Mitsubishi Denki Kabushiki Kaisha
- Ryo Hattori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method for measuring thickness of thin semiconductor...
- Patent number 5,587,792
- Issue date Dec 24, 1996
- Seiji Nishizawa
- G01 - MEASURING TESTING
Information Patent Grant
Method and apparatus for measuring the thicknesses of layers of a m...
- Patent number 5,523,840
- Issue date Jun 4, 1996
- Mitsubishi Denki Kabushiki Kaisha
- Seiji Nishizawa
- G01 - MEASURING TESTING
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 5,498,572
- Issue date Mar 12, 1996
- Mitsubishi Denki Kabushiki Kaisha
- Toshihiko Shiga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing refractory metal gate electrode
- Patent number 5,496,748
- Issue date Mar 5, 1996
- Mitsubishi Denki Kabushiki Kaisha
- Ryo Hattori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optical apparatus components having spectrally overlapping characte...
- Patent number 5,371,596
- Issue date Dec 6, 1994
- Jasco Corporation
- Ryo Hattori
- G01 - MEASURING TESTING
Information Patent Grant
Apparatus for and method of evaluating multilayer thin film
- Patent number 5,227,861
- Issue date Jul 13, 1993
- Mitsubishi Denki Kabushiki Kaisha
- Seizi Nishizawa
- G01 - MEASURING TESTING
Information Patent Grant
Method of making a semiconductor laser device
- Patent number 5,179,040
- Issue date Jan 12, 1993
- Mitsubishi Denki Kabushiki Kaisha
- Ryo Hattori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser device
- Patent number 5,111,471
- Issue date May 5, 1992
- Mitsubishi Denki Kabushiki Kaisha
- Ryo Hattori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for production of a semiconductor laser
- Patent number 5,053,356
- Issue date Oct 1, 1991
- Mitsubishi Denki Kabushiki Kaisha
- Shigeru Mitsui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making a multi-point emission type semiconductor laser d...
- Patent number 5,047,364
- Issue date Sep 10, 1991
- Mitsubishi Denki Kabushiki Kaisha
- Ryo Hattori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a semiconductor laser
- Patent number 5,045,500
- Issue date Sep 3, 1991
- Mitsubishi Denki Kabushiki Kaisha
- Shigeru Mitsui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor photodetector device
- Patent number 5,040,039
- Issue date Aug 13, 1991
- Mitsubishi Denki Kabushiki Kaisha
- Ryo Hattori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic multiple beam semiconductor laser
- Patent number 5,012,478
- Issue date Apr 30, 1991
- Mitsubishi Denki Kabushiki Kaisha
- Ryo Hattori
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser
- Patent number 5,003,549
- Issue date Mar 26, 1991
- Mitsubishi Denki Kabushiki Kaisha
- Shigeru Mitsui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser
- Patent number 4,964,135
- Issue date Oct 16, 1990
- Mitsubishi Denki Kabushiki Kaisha
- Shigeru Mitsui
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE EPITAXIAL WAFER
- Publication number 20180226246
- Publication date Aug 9, 2018
- Mitsubishi Electric Corporation
- Kenichi HAMANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FILM THICKNESS MEASUREMENT METHOD
- Publication number 20140239181
- Publication date Aug 28, 2014
- Mitsubishi Electric Corporation
- Ryo Hattori
- G01 - MEASURING TESTING
Information Patent Application
METHOD AND APPARATUS FOR MANUFACTURING A SiC SINGLE CRYSTAL FILM
- Publication number 20110198614
- Publication date Aug 18, 2011
- Sumitomo Metal Industries, Ltd.
- Kazuhiko KUSUNOKI
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon Nitride Film Forming Method
- Publication number 20080020140
- Publication date Jan 24, 2008
- Hitoshi Morisaki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Semiconductor device
- Publication number 20040108556
- Publication date Jun 10, 2004
- Mitsubishi Denki Kabushiki Kaisha
- Tetsuo Kunii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for evaluating a crystalline semiconductor substrate
- Publication number 20040029390
- Publication date Feb 12, 2004
- Mitsubishi Denki Kabushiki Kaisha
- Yoshitsugu Yamamoto
- G01 - MEASURING TESTING
Information Patent Application
Silicon nitride film forming apparatus and film forming method
- Publication number 20030198743
- Publication date Oct 23, 2003
- Hitoshi Morisaki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Process for manufacturing a semiconductor device
- Publication number 20030194881
- Publication date Oct 16, 2003
- Mitsubishi Denki Kabushiki Kaisha
- Masahiro Totsuka
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method for measuring surface leakage current of sample
- Publication number 20020030504
- Publication date Mar 14, 2002
- Rigaku Corporation
- Ryo Hattori
- G01 - MEASURING TESTING

Ryo Hattori

Person

Patents Grantslast 30 patents

Method of manufacturing silicon carbide epitaxial wafer

Film thickness measurement method

Method and apparatus for manufacturing a SiC single crystal film

Silicon nitride film forming method

Semiconductor device with polymer insulation of some electrodes

Process for manufacturing a semiconductor device

Method for evaluating a crystalline semiconductor substrate

Sample assembly for thermoelectric analyzer

Method for measuring surface leakage current of sample

Field effect semiconductor device

III-V heterojunction bipolar transistor having a GaAs emitter ballast

Semiconductor device including plated heat sink and airbridge for h...

Semiconductor device including ohmic contact to-n-type GaAs

Compound semiconductor bipolar transistor

Semiconductor device electrode

Apparatus and method for measuring thickness of thin semiconductor...

Method and apparatus for measuring the thicknesses of layers of a m...

Method of manufacturing semiconductor device

Method for producing refractory metal gate electrode

Optical apparatus components having spectrally overlapping characte...

Apparatus for and method of evaluating multilayer thin film

Method of making a semiconductor laser device

Semiconductor laser device

Method for production of a semiconductor laser

Method for making a multi-point emission type semiconductor laser d...

Method of making a semiconductor laser

Semiconductor photodetector device

Monolithic multiple beam semiconductor laser

Semiconductor laser

Semiconductor laser

Patents Applicationslast 30 patents

METHOD OF MANUFACTURING SILICON CARBIDE EPITAXIAL WAFER

FILM THICKNESS MEASUREMENT METHOD

METHOD AND APPARATUS FOR MANUFACTURING A SiC SINGLE CRYSTAL FILM

Silicon Nitride Film Forming Method

Semiconductor device

Method for evaluating a crystalline semiconductor substrate

Silicon nitride film forming apparatus and film forming method

Process for manufacturing a semiconductor device

Method for measuring surface leakage current of sample