Sadanand V. Deshpande

Person

Lagrangeville, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Raised source drain mosfet with amorphous notched gate cap layer wi...
- Patent number 7,700,425
- Issue date Apr 20, 2010
- International Business Machines Corporation
- Tina J. Wagner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a doped nitride film, doped oxide film and oth...
- Patent number 7,595,010
- Issue date Sep 29, 2009
- International Business Machines Corporation
- Ashima B. Chakravarti
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
STI stress modification by nitrogen plasma treatment for improving...
- Patent number 7,479,688
- Issue date Jan 20, 2009
- International Business Machines Corporation
- Sadanand V. Deshpande
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistance contact structure and fabrication thereof
- Patent number 7,407,875
- Issue date Aug 5, 2008
- International Business Machines Corporation
- Keith Kwong Hon Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped nitride film, doped oxide film and other doped films
- Patent number 7,361,611
- Issue date Apr 22, 2008
- International Business Machines Corporation
- Ashima B. Chakravarti
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Etch process for improving yield of dielectric contacts on nickel s...
- Patent number 7,354,867
- Issue date Apr 8, 2008
- International Business Machines Corporation
- Scott D. Allen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Clustered surface preparation for silicide and metal contacts
- Patent number 7,344,983
- Issue date Mar 18, 2008
- International Business Machines Corporation
- Sadanand V. Deshpande
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for patterning a semiconductor region
- Patent number 7,091,081
- Issue date Aug 15, 2006
- International Business Machines Corporation
- Sadanand V. Deshpande
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making sub-lithographic features
- Patent number 6,960,510
- Issue date Nov 1, 2005
- International Business Machines Corporation
- Sadanand V. Deshpande
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an electronic device on a recess in the surface o...
- Patent number 6,930,030
- Issue date Aug 16, 2005
- International Business Machines Corporation
- Werner A. Rausch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
In-situ plasma etch for TERA hard mask materials
- Patent number 6,903,023
- Issue date Jun 7, 2005
- International Business Machines Corporation
- Richard S. Wise
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
STI stress modification by nitrogen plasma treatment for improving...
- Patent number 6,887,798
- Issue date May 3, 2005
- International Business Machines Corporation
- Sadanand V. Deshpande
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vapor phase etch trim structure with top etch blocking layer
- Patent number 6,884,734
- Issue date Apr 26, 2005
- International Business Machines Corporation
- Frederick W. Buehrer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate linewidth tailoring and critical dimension control for sub-100...
- Patent number 6,864,041
- Issue date Mar 8, 2005
- International Business Machines Corporation
- Jeffrey J. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Preserving TEOS hard mask using COR for raised source-drain includi...
- Patent number 6,790,733
- Issue date Sep 14, 2004
- International Business Machines Corporation
- Wesley C. Natzle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating SiO2 spacers and annealing caps
- Patent number 6,512,266
- Issue date Jan 28, 2003
- International Business Machines Corporation
- Sadanand V. Deshpande
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ETCH PROCESS FOR IMPROVING YIELD OF DIELECTRIC CONTACTS ON NICKEL S...
- Publication number 20090008785
- Publication date Jan 8, 2009
- International Business Machines Corporation
- Scott D. ALLEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR REDUCING TOP NOTCHING EFFECTS IN PRE-DOPED GATE STRUCTURES
- Publication number 20080188089
- Publication date Aug 7, 2008
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CLUSTERED SURFACE PREPARATION FOR SILICIDE AND METAL CONTACTS
- Publication number 20080156257
- Publication date Jul 3, 2008
- International Business Machines Corporation
- Sadanand V. Deshpande
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
DOPED NITRIDE FILM, DOPED OXIDE FILM AND OTHER DOPED FILMS
- Publication number 20080054228
- Publication date Mar 6, 2008
- Ashima B. Chakravarti
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
LOW RESISTANCE CONTACT STRUCTURE AND FABRICATION THEREOF
- Publication number 20080054326
- Publication date Mar 6, 2008
- International Business Machines Corporation
- Keith Kwong Hon Wong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IMPROVED THERMAL BUDGET USING NICKEL BASED SILICIDES FOR ENHANCED S...
- Publication number 20070249149
- Publication date Oct 25, 2007
- International Business Machines Corporation
- Sadanand V. Deshpande
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacture of raised source drain MOSFET with top notche...
- Publication number 20070037356
- Publication date Feb 15, 2007
- Tina J. Wagner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CLUSTERED SURFACE PREPARATION FOR SILICIDE AND METAL CONTACTS
- Publication number 20060211244
- Publication date Sep 21, 2006
- International Business Machines Corporation
- Sadanand V. Deshpande
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
ETCH PROCESS FOR IMPROVING YIELD OF DIELECTRIC CONTACTS ON NICKEL S...
- Publication number 20060172535
- Publication date Aug 3, 2006
- International Business Machines Corporation
- Scott D. Allen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Doped nitride film, doped oxide film and other doped films
- Publication number 20060138566
- Publication date Jun 29, 2006
- Ashima B. Chakravarti
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
DOPED NITRIDE FILM, DOPED OXIDE FILM AND OTHER DOPED FILMS
- Publication number 20050287747
- Publication date Dec 29, 2005
- International Business Machines Corporation
- Ashima B. Chakravarti
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
A MANUFACTURABLE METHOD AND STRUCTURE FOR DOUBLE SPACER CMOS WITH O...
- Publication number 20050275034
- Publication date Dec 15, 2005
- International Business Machines Corporation
- Sadanand V. Deshpande
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PATTERNING A SEMICONDUCTOR REGION
- Publication number 20050260859
- Publication date Nov 24, 2005
- International Business Machines Corporation
- Sadanand V. Deshpande
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURE OF RAISED SOURCE DRAIN MOSFET WITH TOP NOTCHE...
- Publication number 20050054169
- Publication date Mar 10, 2005
- International Business Machines Corporation
- Tina J. Wagner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming precision recessed gate structure
- Publication number 20040248348
- Publication date Dec 9, 2004
- Werner A. Rausch
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STI stress modification by nitrogen plasma treatment for improving...
- Publication number 20040238914
- Publication date Dec 2, 2004
- International Business Machines Corporation
- Sadanand V. Deshpande
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STI STRESS MODIFICATION BY NITROGEN PLASMA TREATMENT FOR IMPROVING...
- Publication number 20040242010
- Publication date Dec 2, 2004
- International Business Machines Corporation
- Sadanand V. Deshpande
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vapor phase etch trim structure with top etch blocking layer
- Publication number 20040198030
- Publication date Oct 7, 2004
- International Business Machines Corporation
- Frederick W. Buehrer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRESERVING TEOS HARD MASK USING COR FOR RAISED SOURCE-DRAIN INCLUDI...
- Publication number 20040191998
- Publication date Sep 30, 2004
- International Business Machines Corporation
- Wesley C. Natzle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
In-situ plasma etch for TERA hard mask materials
- Publication number 20040053504
- Publication date Mar 18, 2004
- International Business Machines Corporation
- Richard S. Wise
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
Method of making sub-lithographic features
- Publication number 20040002203
- Publication date Jan 1, 2004
- International Business Machines Corporation
- Sadanand V. Deshpande
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SIO2 SPACERS AND ANNEALING CAPS
- Publication number 20030011080
- Publication date Jan 16, 2003
- International Business Machines Corporation
- Sadanand V. Deshpande
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate linewidth tailoring and critical dimension control for sub-100...
- Publication number 20020164546
- Publication date Nov 7, 2002
- International Business Machines Corporation
- Jeffrey J. Brown
- H01 - BASIC ELECTRIC ELEMENTS

Sadanand V. Deshpande

Person

Patents Grantslast 30 patents

Raised source drain mosfet with amorphous notched gate cap layer wi...

Method for producing a doped nitride film, doped oxide film and oth...

STI stress modification by nitrogen plasma treatment for improving...

Low resistance contact structure and fabrication thereof

Doped nitride film, doped oxide film and other doped films

Etch process for improving yield of dielectric contacts on nickel s...

Clustered surface preparation for silicide and metal contacts

Method for patterning a semiconductor region

Method of making sub-lithographic features

Method of forming an electronic device on a recess in the surface o...

In-situ plasma etch for TERA hard mask materials

STI stress modification by nitrogen plasma treatment for improving...

Vapor phase etch trim structure with top etch blocking layer

Gate linewidth tailoring and critical dimension control for sub-100...

Preserving TEOS hard mask using COR for raised source-drain includi...

Method of fabricating SiO2 spacers and annealing caps

Patents Applicationslast 30 patents

ETCH PROCESS FOR IMPROVING YIELD OF DIELECTRIC CONTACTS ON NICKEL S...

METHOD FOR REDUCING TOP NOTCHING EFFECTS IN PRE-DOPED GATE STRUCTURES

CLUSTERED SURFACE PREPARATION FOR SILICIDE AND METAL CONTACTS

DOPED NITRIDE FILM, DOPED OXIDE FILM AND OTHER DOPED FILMS

LOW RESISTANCE CONTACT STRUCTURE AND FABRICATION THEREOF

IMPROVED THERMAL BUDGET USING NICKEL BASED SILICIDES FOR ENHANCED S...

Method of manufacture of raised source drain MOSFET with top notche...

CLUSTERED SURFACE PREPARATION FOR SILICIDE AND METAL CONTACTS

ETCH PROCESS FOR IMPROVING YIELD OF DIELECTRIC CONTACTS ON NICKEL S...

Doped nitride film, doped oxide film and other doped films

DOPED NITRIDE FILM, DOPED OXIDE FILM AND OTHER DOPED FILMS

A MANUFACTURABLE METHOD AND STRUCTURE FOR DOUBLE SPACER CMOS WITH O...

METHOD FOR PATTERNING A SEMICONDUCTOR REGION

METHOD OF MANUFACTURE OF RAISED SOURCE DRAIN MOSFET WITH TOP NOTCHE...

Method of forming precision recessed gate structure

STI stress modification by nitrogen plasma treatment for improving...

STI STRESS MODIFICATION BY NITROGEN PLASMA TREATMENT FOR IMPROVING...

Vapor phase etch trim structure with top etch blocking layer

PRESERVING TEOS HARD MASK USING COR FOR RAISED SOURCE-DRAIN INCLUDI...

In-situ plasma etch for TERA hard mask materials

Method of making sub-lithographic features

METHOD OF FABRICATING SIO2 SPACERS AND ANNEALING CAPS

Gate linewidth tailoring and critical dimension control for sub-100...