Salil Mujumdar

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Atomic layer deposition of HfAlC as a metal gate workfunction mater...
- Patent number 9,607,904
- Issue date Mar 28, 2017
- Intermolecular, Inc.
- Albert Sanghyup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structures for transistor devices for CMOS applications and pr...
- Patent number 9,362,283
- Issue date Jun 7, 2016
- GLOBALFOUNDRIES Inc.
- Zhendong Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to control depth profiles of dopants using a remote plasma s...
- Patent number 9,224,644
- Issue date Dec 29, 2015
- Intermolecular, Inc.
- Sandip Niyogi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Methods of forming gate structures for transistor devices for CMOS...
- Patent number 9,105,497
- Issue date Aug 11, 2015
- GLOBALFOUNDRIES Inc.
- Zhendong Hong
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Selector Elements
- Publication number 20170104031
- Publication date Apr 13, 2017
- Intermolecular, Inc.
- Mark Clark
- G11 - INFORMATION STORAGE
Information Patent Application
Combining Materials in Different Components of Selector Elements of...
- Publication number 20170062522
- Publication date Mar 2, 2017
- Intermolecular, Inc.
- Salil Mujumdar
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductor Device Metal-Insulator-Semiconductor Contacts with In...
- Publication number 20160181380
- Publication date Jun 23, 2016
- INTERMOLECULAR INC.
- Amol Joshi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Atomic Layer Deposition of HfAlC as a Metal Gate Workfunction Mater...
- Publication number 20160035631
- Publication date Feb 4, 2016
- GLOBALFOUNDRIES, Inc.
- Albert Sanghyup Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal-insulator-semiconductor (MIS) contact with controlled defect...
- Publication number 20150380309
- Publication date Dec 31, 2015
- INTERMOLECULAR INC.
- Salil Mujumdar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING GATE STRUCTURES FOR TRANSISTOR DEVICES FOR CMOS...
- Publication number 20150311206
- Publication date Oct 29, 2015
- GLOBAL FOUNDRIES Inc.
- Zhendong Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Two Step Deposition of High-k Gate Dielectric Materials
- Publication number 20150140838
- Publication date May 21, 2015
- INTERMOLECULAR INC.
- Kevin Kashefi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR DEPOSITING AN ALUMINUM OXIDE LAYER OVER GERMANIUM SUSBT...
- Publication number 20150093914
- Publication date Apr 2, 2015
- Intermolecular
- Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR REMOVING A NATIVE OXIDE LAYER FROM GERMANIUM SUSBTRATES...
- Publication number 20150093889
- Publication date Apr 2, 2015
- Intermolecular
- Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR REMOVING A NATIVE OXIDE LAYER FROM GERMANIUM SUSBTRATES...
- Publication number 20150093887
- Publication date Apr 2, 2015
- GLOBALFOUNDRIES, Inc.
- Bin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING GATE STRUCTURES FOR TRANSISTOR DEVICES FOR CMOS...
- Publication number 20150061027
- Publication date Mar 5, 2015
- GLOBALFOUNDRIES INC.
- Zhendong Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method to Control Depth Profiles of Dopants Using a Remote Plasma S...
- Publication number 20140179100
- Publication date Jun 26, 2014
- Intermolecular, Inc.
- Sandip Niyogi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
TRANSITION METAL ALUMINATE AND HIGH K DIELECTRIC SEMICONDUCTOR STACK
- Publication number 20140175618
- Publication date Jun 26, 2014
- INTERMOLECULAR INC.
- Salil Mujumdar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Sacrificial Low Work Function Cap Layer
- Publication number 20140099785
- Publication date Apr 10, 2014
- Intermolecular, Inc.
- Salil Mujumdar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DISTRIBUTED SUBSTRATE TOP CONTACT FOR MOSCAP MEASUREMENTS
- Publication number 20140008763
- Publication date Jan 9, 2014
- Intermolecular, Inc.
- Salil Mujumdar
- H01 - BASIC ELECTRIC ELEMENTS

Salil Mujumdar

Person

Patents Grantslast 30 patents

Atomic layer deposition of HfAlC as a metal gate workfunction mater...

Gate structures for transistor devices for CMOS applications and pr...

Method to control depth profiles of dopants using a remote plasma s...

Methods of forming gate structures for transistor devices for CMOS...

Patents Applicationslast 30 patents

Selector Elements

Combining Materials in Different Components of Selector Elements of...

Semiconductor Device Metal-Insulator-Semiconductor Contacts with In...

Atomic Layer Deposition of HfAlC as a Metal Gate Workfunction Mater...

Metal-insulator-semiconductor (MIS) contact with controlled defect...

METHODS OF FORMING GATE STRUCTURES FOR TRANSISTOR DEVICES FOR CMOS...

Two Step Deposition of High-k Gate Dielectric Materials

METHODS FOR DEPOSITING AN ALUMINUM OXIDE LAYER OVER GERMANIUM SUSBT...

METHODS FOR REMOVING A NATIVE OXIDE LAYER FROM GERMANIUM SUSBTRATES...

METHODS FOR REMOVING A NATIVE OXIDE LAYER FROM GERMANIUM SUSBTRATES...

METHODS OF FORMING GATE STRUCTURES FOR TRANSISTOR DEVICES FOR CMOS...

Method to Control Depth Profiles of Dopants Using a Remote Plasma S...

TRANSITION METAL ALUMINATE AND HIGH K DIELECTRIC SEMICONDUCTOR STACK

Sacrificial Low Work Function Cap Layer

DISTRIBUTED SUBSTRATE TOP CONTACT FOR MOSCAP MEASUREMENTS