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Sameer Parab
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San Jose, CA, US
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Patents Grants
last 30 patents
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Patent Grant
Reduced substrate capacitance high performance SOI process
Patent number
6,617,646
Issue date
Sep 9, 2003
Elantec Semiconductor, Inc.
Sameer Parab
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Reduced substrate capacitance high performance SOI process
Patent number
6,403,447
Issue date
Jun 11, 2002
Elantec Semiconductor, Inc.
Sameer Parab
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Gas agitated liquid etcher
Patent number
5,846,374
Issue date
Dec 8, 1998
Elantec Semiconductor, Inc.
Sameer Parab
H01 - BASIC ELECTRIC ELEMENTS
Patents Applications
last 30 patents
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Patent Application
Reduced substrate capacitance high performance SOI process
Publication number
20020127823
Publication date
Sep 12, 2002
Sameer Parab
H01 - BASIC ELECTRIC ELEMENTS