Seiji Fujino

Person

Toyota, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device having a high breakdown voltage
- Patent number 5,874,768
- Issue date Feb 23, 1999
- Nippondenso Co., Ltd.
- Hitoshi Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor integrated circuit device and manufacturing method fo...
- Patent number 5,869,872
- Issue date Feb 9, 1999
- Nippondenso Co., Ltd.
- Akiyoshi Asai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a MIS transistor
- Patent number 5,753,556
- Issue date May 19, 1998
- Nippondenso Co., Ltd.
- Mitsutaka Katada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing semiconductor device
- Patent number 5,650,354
- Issue date Jul 22, 1997
- Nippondenso Co., Ltd.
- Hiroaki Himi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having SOI structure and method for fabricatin...
- Patent number 5,567,968
- Issue date Oct 22, 1996
- Nippondenso Co., Ltd.
- Kazuhiro Tsuruta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with isolation regions
- Patent number 5,525,824
- Issue date Jun 11, 1996
- Nippondenso Co., Ltd.
- Hiroaki Himi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI MOSFET with floating gate
- Patent number 5,488,243
- Issue date Jan 30, 1996
- Nippondenso Co., Ltd.
- Kazuhiro Tsuruta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method therefor
- Patent number 5,466,303
- Issue date Nov 14, 1995
- Nippondenso Co., Ltd.
- Hitoshi Yamaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor substrate
- Patent number 5,451,547
- Issue date Sep 19, 1995
- Nippondenso Co., Ltd.
- Hiroaki Himi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for direct bonding two bodies
- Patent number 5,421,953
- Issue date Jun 6, 1995
- Nippondenso Co., Ltd.
- Masao Nagakubo
- B29 - WORKING OF PLASTICS WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL
Information Patent Grant
Method of bonding semiconductor substrates
- Patent number 5,383,993
- Issue date Jan 24, 1995
- Nippon Soken Inc.
- Mitsutaka Katada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor power device having walls of an inverted mesa shape t...
- Patent number 5,313,092
- Issue date May 17, 1994
- Nippon Soken, Inc.
- Kazuhiro Tsuruta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing semiconductor substrate having dielectric separ...
- Patent number 5,223,450
- Issue date Jun 29, 1993
- Nippon Soken, Inc.
- Seiji Fujino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and a method for producing the same
- Patent number 5,164,218
- Issue date Nov 17, 1992
- Nippon Soken, Inc.
- Kazuhiro Tsuruta
- H01 - BASIC ELECTRIC ELEMENTS

Seiji Fujino

Person

Patents Grantslast 30 patents

Semiconductor device having a high breakdown voltage

Semiconductor integrated circuit device and manufacturing method fo...

Method of fabricating a MIS transistor

Method for producing semiconductor device

Semiconductor device having SOI structure and method for fabricatin...

Semiconductor device with isolation regions

SOI MOSFET with floating gate

Semiconductor device and manufacturing method therefor

Method of manufacturing semiconductor substrate

Method and apparatus for direct bonding two bodies

Method of bonding semiconductor substrates

Semiconductor power device having walls of an inverted mesa shape t...

Method of producing semiconductor substrate having dielectric separ...

Semiconductor device and a method for producing the same