Seiji Nagai

Person

Kato, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method for producing a group III nitride semiconductor crystal and...
- Patent number 9,691,610
- Issue date Jun 27, 2017
- Toyoda Gosei Co., Ltd.
- Shohei Kumegawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a group III nitride semiconductor single cryst...
- Patent number 9,567,693
- Issue date Feb 14, 2017
- Toyoda Gosei Co., Ltd.
- Seiji Nagai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor crystal removal apparatus and production method for s...
- Patent number 9,388,506
- Issue date Jul 12, 2016
- Toyoda Gosei Co., Ltd.
- Shiro Yamazaki
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for producing group III nitride-based compound semiconductor...
- Patent number 9,263,258
- Issue date Feb 16, 2016
- Toyoda Gosei Co., Ltd.
- Seiji Nagai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for etching a group III nitride semiconductor, method for pr...
- Patent number 9,153,439
- Issue date Oct 6, 2015
- Toyoda Gosei Co., Ltd.
- Shohei Kumegawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
N-type group III nitride-based compound semiconductor and productio...
- Patent number 8,507,364
- Issue date Aug 13, 2013
- Toyoda Gosei Co., Ltd.
- Seiji Nagai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing group III nitride semiconductor
- Patent number 8,501,141
- Issue date Aug 6, 2013
- Toyoda Gosei Co., Ltd.
- Takayuki Sato
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing group III nitride-based compound semiconductor
- Patent number 8,361,222
- Issue date Jan 29, 2013
- Toyoda Gosei Co., Ltd.
- Shiro Yamazaki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing a semiconductor crystal
- Patent number 8,216,365
- Issue date Jul 10, 2012
- Toyoda Gosei Co., Ltd.
- Seiji Nagai
- C30 - CRYSTAL GROWTH
Information Patent Grant
Crystal growing apparatus
- Patent number 7,708,833
- Issue date May 4, 2010
- Toyoda Gosei Co., Ltd.
- Shiro Yamazaki
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for fabricating group III nitride compound semiconductors an...
- Patent number 7,491,984
- Issue date Feb 17, 2009
- Toyoda Gosei Co., Ltd.
- Masayoshi Koike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing group-III nitride compound semiconductor,...
- Patent number 7,163,876
- Issue date Jan 16, 2007
- Toyoda Gosei Co., Ltd.
- Seiji Nagai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Production method of III nitride compound semiconductor and III nit...
- Patent number 7,141,444
- Issue date Nov 28, 2006
- Toyoda Gosei Co., Ltd.
- Masayoshi Koike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Production method for semiconductor crystal and semiconductor lumin...
- Patent number 7,052,979
- Issue date May 30, 2006
- Toyoda Gosei Co., Ltd.
- Seiji Nagai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Production method for semiconductor substrate and semiconductor ele...
- Patent number 7,011,707
- Issue date Mar 14, 2006
- Toyoda Gosei Co., Ltd.
- Seiji Nagai
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for producing semiconductor crystal
- Patent number 6,964,705
- Issue date Nov 15, 2005
- Toyoda Gosei Co., Ltd.
- Seiji Nagai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating group III nitride compound semiconductors a...
- Patent number 6,861,305
- Issue date Mar 1, 2005
- Toyoda Gosei Co., Ltd.
- Masayoshi Koike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating Group III nitride compound semiconductor sub...
- Patent number 6,855,620
- Issue date Feb 15, 2005
- Toyoda Gosei Co., Ltd.
- Masayoshi Koike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Production method of III nitride compound semiconductor, and III ni...
- Patent number 6,844,246
- Issue date Jan 18, 2005
- Toyoda Gosei Co., Ltd.
- Seiji Nagai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light-emitting device and manufacturing method thereof
- Patent number 6,821,800
- Issue date Nov 23, 2004
- Toyoda Gosei Co., Ltd
- Norikatsu Koide
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing group III nitride compound semiconductor a...
- Patent number 6,790,279
- Issue date Sep 14, 2004
- Toyoda Gosei Co., Ltd.
- Masayoshi Koike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride compound semiconductor element and method for pro...
- Patent number 6,716,655
- Issue date Apr 6, 2004
- Toyoda Gosei Co., Ltd.
- Seiji Nagai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor substrate
- Patent number 6,679,947
- Issue date Jan 20, 2004
- Toyoda Gosei Co., Ltd.
- Masayoshi Koike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride compound semiconductor laser
- Patent number 6,680,957
- Issue date Jan 20, 2004
- Toyoda Gosei Co., Ltd.
- Masayoshi Koike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing group III nitride compound semiconductor a...
- Patent number 6,645,295
- Issue date Nov 11, 2003
- Toyoda Gosei Co., Ltd.
- Masayoshi Koike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light-emitting device and manufacturing method thereof
- Patent number 6,541,293
- Issue date Apr 1, 2003
- Toyoda Gosei Co., Ltd.
- Norikatsu Koide
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing group III nitride compound semiconductor l...
- Patent number 6,486,068
- Issue date Nov 26, 2002
- Toyoda Gosei Co., Ltd.
- Shiro Yamasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor substrate
- Patent number 6,471,770
- Issue date Oct 29, 2002
- Toyoda Gosei Co., Ltd.
- Masayoshi Koike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light-emitting device and manufacturing method thereof
- Patent number 6,420,733
- Issue date Jul 16, 2002
- Toyoda Gosei Co., Ltd.
- Norikatsu Koide
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor light-emitting device and manufacturing method thereof
- Patent number 6,326,236
- Issue date Dec 4, 2001
- Toyoda Gosei Co., Ltd
- Norikatsu Koide
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR PRODUCING A GROUP III NITRIDE SEMICONDUCTOR SINGLE CRYST...
- Publication number 20170081780
- Publication date Mar 23, 2017
- Toyoda Gosei Co., Ltd.
- Seiji NAGAI
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Producing a Group III Nitride Semiconductor Crystal and...
- Publication number 20140360426
- Publication date Dec 11, 2014
- Toyoda Gosei Co., Ltd.
- Shohei Kumegawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Etching a Group III Nitride Semiconductor, Method for Pr...
- Publication number 20140363954
- Publication date Dec 11, 2014
- Shohei Kumegawa
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR CRYSTAL REMOVAL APPARATUS AND PRODUCTION METHOD FOR S...
- Publication number 20140000509
- Publication date Jan 2, 2014
- Shiro YAMAZAKI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING A GROUP III NITRIDE SEMICONDUCTOR SINGLE CRYST...
- Publication number 20130199438
- Publication date Aug 8, 2013
- Toyoda Gosei Co., Ltd.
- Seiji NAGAI
- C30 - CRYSTAL GROWTH
Information Patent Application
REACTION VESSEL FOR GROWING SINGLE CRYSTAL AND METHOD FOR GROWING S...
- Publication number 20110259261
- Publication date Oct 27, 2011
- NGK Insulators, Ltd.
- Makoto IWAI
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for producing group III nitride semiconductor
- Publication number 20100247418
- Publication date Sep 30, 2010
- Toyoda Gosei Co., Ltd.
- Takayuki Sato
- C30 - CRYSTAL GROWTH
Information Patent Application
FOLDING ELECTRONIC DEVICE AND DEVICE FOR REDUCING UNDESIRED PLAY IN...
- Publication number 20090310328
- Publication date Dec 17, 2009
- FUJITSU LIMITED
- Chikara KOBAYASHI
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
N-type group III nitride-based compound semiconductor and productio...
- Publication number 20090294909
- Publication date Dec 3, 2009
- OSAKA UNIVERSITY
- Seiji Nagai
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for producing Group III nitride-based compound semiconductor...
- Publication number 20090197118
- Publication date Aug 6, 2009
- TOYODA GOSEI CO.,LTD.
- Seiji NAGAI
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for producing group III Nitride-based compound semiconductor
- Publication number 20080271665
- Publication date Nov 6, 2008
- Toyoda Gosei Co., Ltd.
- Shiro YAMAZAKI
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for producing a semiconductor crystal
- Publication number 20080223286
- Publication date Sep 18, 2008
- Toyoda Gosei Co., Ltd.
- Seiji Nagai
- C30 - CRYSTAL GROWTH
Information Patent Application
Crystal growing apparatus
- Publication number 20080223288
- Publication date Sep 18, 2008
- Toyoda Gosei Co., Ltd.
- Shiro Yamazaki
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for fabricating group III nitride compound semiconductors an...
- Publication number 20050093099
- Publication date May 5, 2005
- Toyoda Gosei Co., Ltd.
- Masayoshi Koike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for manufacturing group-III nitride compound semiconductor,...
- Publication number 20040219702
- Publication date Nov 4, 2004
- Seiji Nagai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Production method for semiconductor crystal and semiconductor lumin...
- Publication number 20040123796
- Publication date Jul 1, 2004
- Seiji Nagai
- C30 - CRYSTAL GROWTH
Information Patent Application
Production method for semiconductor substrate and semiconductor ele...
- Publication number 20040115937
- Publication date Jun 17, 2004
- Seiji Nagai
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method for producing group III nitride compound semiconductor subst...
- Publication number 20040107891
- Publication date Jun 10, 2004
- Toyoda Gosei Co., Ltd.
- Seiji Nagai
- C30 - CRYSTAL GROWTH
Information Patent Application
Production method of III nitride compound semiconductor, and III ni...
- Publication number 20040087115
- Publication date May 6, 2004
- Seiji Nagai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Production method of lll nitride compound semiconductor substrate a...
- Publication number 20040048448
- Publication date Mar 11, 2004
- Masayoshi Koike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for producing semiconductor crystal
- Publication number 20040016396
- Publication date Jan 29, 2004
- TOYODA GOSEI CO., LTD
- Seiji Nagai
- C30 - CRYSTAL GROWTH
Information Patent Application
Portable electronic device and imaging system
- Publication number 20040012701
- Publication date Jan 22, 2004
- FUJITSU LIMITED
- Seiji Nagai
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Production method of III nitride compound semiconductor and III nit...
- Publication number 20030134446
- Publication date Jul 17, 2003
- Masayoshi Koike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor light-emitting device and manufacturing method thereof
- Publication number 20030124789
- Publication date Jul 3, 2003
- TOYODA GOSEI CO., LTD
- Norikatsu Koide
- B82 - NANO-TECHNOLOGY
Information Patent Application
Production method of III nitride compound semiconductor and III nit...
- Publication number 20030119239
- Publication date Jun 26, 2003
- Masayoshi Koike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor substrate
- Publication number 20030010281
- Publication date Jan 16, 2003
- Toyoda Gosei Co., Ltd.
- Masayoshi Koike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III nitride compound semiconductor element and method for pro...
- Publication number 20020197841
- Publication date Dec 26, 2002
- Seiji Nagai
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for manufacturing group III nitride compound semiconductor a...
- Publication number 20020179005
- Publication date Dec 5, 2002
- Masayoshi Koike
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor light-emitting device and manufacturing method thereof
- Publication number 20020146854
- Publication date Oct 10, 2002
- Toyoda Gosei Co., Ltd.
- Norikatsu Koide
- B82 - NANO-TECHNOLOGY
Information Patent Application
METHOD FOR MANUFACTURING GROUP III NITRIDE COMPOUND SEMICONDUCTOR L...
- Publication number 20020006726
- Publication date Jan 17, 2002
- SHIRO YAMASAKI
- H01 - BASIC ELECTRIC ELEMENTS

Seiji Nagai

Person

Patents Grantslast 30 patents

Method for producing a group III nitride semiconductor crystal and...

Method for producing a group III nitride semiconductor single cryst...

Semiconductor crystal removal apparatus and production method for s...

Method for producing group III nitride-based compound semiconductor...

Method for etching a group III nitride semiconductor, method for pr...

N-type group III nitride-based compound semiconductor and productio...

Method for producing group III nitride semiconductor

Method for producing group III nitride-based compound semiconductor

Method for producing a semiconductor crystal

Crystal growing apparatus

Method for fabricating group III nitride compound semiconductors an...

Method for manufacturing group-III nitride compound semiconductor,...

Production method of III nitride compound semiconductor and III nit...

Production method for semiconductor crystal and semiconductor lumin...

Production method for semiconductor substrate and semiconductor ele...

Method for producing semiconductor crystal

Methods for fabricating group III nitride compound semiconductors a...

Method for fabricating Group III nitride compound semiconductor sub...

Production method of III nitride compound semiconductor, and III ni...

Semiconductor light-emitting device and manufacturing method thereof

Method for manufacturing group III nitride compound semiconductor a...

Group III nitride compound semiconductor element and method for pro...

Semiconductor substrate

Group III nitride compound semiconductor laser

Method for manufacturing group III nitride compound semiconductor a...

Semiconductor light-emitting device and manufacturing method thereof

Method for manufacturing group III nitride compound semiconductor l...

Method of manufacturing semiconductor substrate

Semiconductor light-emitting device and manufacturing method thereof

Semiconductor light-emitting device and manufacturing method thereof

Patents Applicationslast 30 patents

METHOD FOR PRODUCING A GROUP III NITRIDE SEMICONDUCTOR SINGLE CRYST...

Method for Producing a Group III Nitride Semiconductor Crystal and...

Method for Etching a Group III Nitride Semiconductor, Method for Pr...

SEMICONDUCTOR CRYSTAL REMOVAL APPARATUS AND PRODUCTION METHOD FOR S...

METHOD FOR PRODUCING A GROUP III NITRIDE SEMICONDUCTOR SINGLE CRYST...

REACTION VESSEL FOR GROWING SINGLE CRYSTAL AND METHOD FOR GROWING S...

Method for producing group III nitride semiconductor

FOLDING ELECTRONIC DEVICE AND DEVICE FOR REDUCING UNDESIRED PLAY IN...

N-type group III nitride-based compound semiconductor and productio...

Method for producing Group III nitride-based compound semiconductor...

Method for producing group III Nitride-based compound semiconductor

Method for producing a semiconductor crystal

Crystal growing apparatus

Method for fabricating group III nitride compound semiconductors an...

Method for manufacturing group-III nitride compound semiconductor,...

Production method for semiconductor crystal and semiconductor lumin...

Production method for semiconductor substrate and semiconductor ele...

Method for producing group III nitride compound semiconductor subst...

Production method of III nitride compound semiconductor, and III ni...

Production method of lll nitride compound semiconductor substrate a...

Method for producing semiconductor crystal

Portable electronic device and imaging system

Production method of III nitride compound semiconductor and III nit...

Semiconductor light-emitting device and manufacturing method thereof

Production method of III nitride compound semiconductor and III nit...

Semiconductor substrate

Group III nitride compound semiconductor element and method for pro...

Method for manufacturing group III nitride compound semiconductor a...

Semiconductor light-emitting device and manufacturing method thereof

METHOD FOR MANUFACTURING GROUP III NITRIDE COMPOUND SEMICONDUCTOR L...