Seiji SARAYAMA

Person

Miyagi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Group III nitride crystal substrate having a diameter of 4 inches o...
- Patent number 11,718,927
- Issue date Aug 8, 2023
- Sumitomo Chemical Company, Limited
- Takehiro Yoshida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing group 13 nitride crystal and group 13 nitr...
- Patent number 10,538,858
- Issue date Jan 21, 2020
- SCIOCS COMPANY LIMITED
- Masahiro Hayashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing gallium nitride crystal
- Patent number 10,100,426
- Issue date Oct 16, 2018
- Ricoh Company, Ltd.
- Takashi Satoh
- C30 - CRYSTAL GROWTH
Information Patent Grant
Production of a GaN bulk crystal substrate and a semiconductor devi...
- Patent number 9,869,033
- Issue date Jan 16, 2018
- Ricoh Company, Ltd.
- Seiji Sarayama
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gallium nitride crystal, group 13 nitride crystal, group 13 nitride...
- Patent number 9,863,058
- Issue date Jan 9, 2018
- Ricoh Company, Ltd.
- Masahiro Hayashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Crystal growth apparatus and manufacturing method of group III nitr...
- Patent number 9,856,575
- Issue date Jan 2, 2018
- Ricoh Company, Ltd.
- Seiji Sarayama
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group 13 nitride crystal and group 13 nitride crystal substrate
- Patent number 9,732,435
- Issue date Aug 15, 2017
- Ricoh Company, Ltd.
- Masahiro Hayashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Manufacturing method of group 13 nitride crystal
- Patent number 9,404,196
- Issue date Aug 2, 2016
- Ricoh Company, Ltd.
- Masahiro Hayashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Manufacturing method and manufacturing apparatus of a group III nit...
- Patent number 9,376,763
- Issue date Jun 28, 2016
- Ricoh Company, Ltd.
- Hirokazu Iwata
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Group III nitride crystal and manufacturing method thereof
- Patent number 9,365,948
- Issue date Jun 14, 2016
- Ricoh Company, Ltd.
- Hirokazu Iwata
- C30 - CRYSTAL GROWTH
Information Patent Grant
Crystal manufacturing apparatus
- Patent number 9,222,199
- Issue date Dec 29, 2015
- Ricoh Company, Ltd.
- Seiji Sarayama
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Crystal growth apparatus and manufacturing method of group III nitr...
- Patent number 9,163,325
- Issue date Oct 20, 2015
- Ricoh Company, Ltd.
- Seiji Sarayama
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Group 13 nitride crystal and substrate thereof
- Patent number 9,123,863
- Issue date Sep 1, 2015
- Ricoh Company, Ltd.
- Masahiro Hayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride crystal and method for producing the same
- Patent number 9,096,950
- Issue date Aug 4, 2015
- Ricoh Company, Ltd.
- Takashi Satoh
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of producing group III nitride crystal, apparatus for produc...
- Patent number 8,888,912
- Issue date Nov 18, 2014
- Ricoh Company, Ltd.
- Seiji Sarayama
- C30 - CRYSTAL GROWTH
Information Patent Grant
Crystal producing apparatus, crystal producing method, substrate pr...
- Patent number 8,829,530
- Issue date Sep 9, 2014
- Ricoh Company, Ltd.
- Seiji Sarayama
- C30 - CRYSTAL GROWTH
Information Patent Grant
Crystal growth apparatus
- Patent number 8,623,138
- Issue date Jan 7, 2014
- Ricoh Company, Ltd.
- Seiji Sarayama
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Production of a GaN bulk crystal substrate and a semiconductor devi...
- Patent number 8,591,647
- Issue date Nov 26, 2013
- Ricoh Company, Ltd.
- Seiji Sarayama
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
Crystal growth method, crystal growth apparatus, group-III nitride...
- Patent number 8,562,737
- Issue date Oct 22, 2013
- Ricoh Company, Ltd.
- Seiji Sarayama
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Crystal preparing device, crystal preparing method, and crystal
- Patent number 8,475,593
- Issue date Jul 2, 2013
- Ricoh Company, Ltd.
- Hirokazu Iwata
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Crystal producing apparatus, crystal producing method, substrate pr...
- Patent number 8,337,798
- Issue date Dec 25, 2012
- Ricoh Company, Ltd.
- Seiji Sarayama
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Manufacturing method and manufacturing apparatus of a group III nit...
- Patent number 8,337,617
- Issue date Dec 25, 2012
- Ricoh Company, Ltd.
- Hirokazu Iwata
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Group III nitride crystal and manufacturing method thereof
- Patent number 8,323,404
- Issue date Dec 4, 2012
- Ricoh Company, Ltd.
- Hirokazu Iwata
- C30 - CRYSTAL GROWTH
Information Patent Grant
Electrophotographic photoreceptor, image forming method using elect...
- Patent number 8,129,082
- Issue date Mar 6, 2012
- Ricoh Company, Ltd.
- Seiji Sarayama
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Crystal growth apparatus and manufacturing method of group III nitr...
- Patent number 8,101,020
- Issue date Jan 24, 2012
- Ricoh Company, Ltd.
- Seiji Sarayama
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Group III nitride crystal, crystal growth process and crystal growt...
- Patent number 7,981,213
- Issue date Jul 19, 2011
- Ricoh Company, Ltd.
- Hirokazu Iwata
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Methods of growing a group III nitride crystal
- Patent number 7,828,896
- Issue date Nov 9, 2010
- Ricoh Company, Ltd.
- Hirokazu Iwata
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Crystal manufacturing apparatus
- Patent number 7,718,002
- Issue date May 18, 2010
- Ricoh Company, Ltd.
- Seiji Sarayama
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Crystal growth method
- Patent number 7,531,038
- Issue date May 12, 2009
- Ricoh Company, Ltd.
- Seiji Sarayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Production of a GaN bulk crystal substrate and a semiconductor devi...
- Patent number 7,508,003
- Issue date Mar 24, 2009
- Ricoh Company, Ltd.
- Seiji Sarayama
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF MANUFACTURING CRYSTAL SUBSTRATE AND CRYSTAL SUBSTRATE
- Publication number 20190292682
- Publication date Sep 26, 2019
- SCIOCS COMPANY LIMITED
- Takehiro YOSHIDA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING GROUP 13 NITRIDE SINGLE CRYSTAL AND APPARATUS...
- Publication number 20180163323
- Publication date Jun 14, 2018
- Takashi Satoh
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP 13 NITRIDE CRYSTAL SUBSTRATE, MANUFACTURING METHOD OF GROUP 1...
- Publication number 20170204534
- Publication date Jul 20, 2017
- RICOH COMPANY, LTD.
- Masahiro HAYASHI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING GALLIUM NITRIDE CRYSTAL
- Publication number 20170022629
- Publication date Jan 26, 2017
- RICOH COMPANY, LTD.
- Takashi SATOH
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING GROUP 13 NITRIDE CRYSTAL AND GROUP 13 NITR...
- Publication number 20160348272
- Publication date Dec 1, 2016
- RICOH COMPANY, LTD.
- Masahiro HAYASHI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD AND APPARATUS FOR MANUFACTURING GROUP 13 NITRIDE CRYSTAL
- Publication number 20160177468
- Publication date Jun 23, 2016
- RICOH COMPANY, LIMITED
- Takashi SATOH
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATUS AND METHOD FOR MANUFACTURING GROUP 13 NITRIDE CRYSTAL
- Publication number 20160168747
- Publication date Jun 16, 2016
- RICOH COMPANY, LTD.
- Takashi SATOH
- C30 - CRYSTAL GROWTH
Information Patent Application
CRYSTAL GROWTH APPARATUS AND MANUFACTURING METHOD OF GROUP III NITR...
- Publication number 20160002818
- Publication date Jan 7, 2016
- Seiji SARAYAMA
- C30 - CRYSTAL GROWTH
Information Patent Application
NITRIDE CRYSTAL AND METHOD FOR PRODUCING THE SAME
- Publication number 20150315723
- Publication date Nov 5, 2015
- RICOH COMPANY, LIMITED
- Takashi Satoh
- C30 - CRYSTAL GROWTH
Information Patent Application
GALLIUM NITRIDE CRYSTAL, GROUP 13 NITRIDE CRYSTAL, GROUP 13 NITRIDE...
- Publication number 20150247257
- Publication date Sep 3, 2015
- RICOH COMPANY, LTD.
- Masahiro HAYASHI
- C30 - CRYSTAL GROWTH
Information Patent Application
PRODUCTION OF A GaN BULK CRYSTAL SUBSTRATE AND A SEMICONDUCTOR DEVI...
- Publication number 20150152568
- Publication date Jun 4, 2015
- RICOH COMPANY, LTD.
- Seiji Sarayama
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING GROUP 13 NITRIDE CRYSTAL AND APPARATUS FOR PRO...
- Publication number 20140261157
- Publication date Sep 18, 2014
- RICOH COMPANY, LTD.
- Takashi Satoh
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP 13 NITRIDE CRYSTAL AND METHOD FOR PRODUCTION OF GROUP 13 NITR...
- Publication number 20140271439
- Publication date Sep 18, 2014
- RICOH COMPANY, LTD.
- JUNICHI WADA
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP 13 NITRIDE CRYSTAL, GROUP 13 NITRIDE CRYSTAL SUBSTRATE, AND M...
- Publication number 20140077218
- Publication date Mar 20, 2014
- RICOH COMPANY, LTD.
- Masahiro Hayashi
- C30 - CRYSTAL GROWTH
Information Patent Application
PRODUCTION OF A GaN BULK CRYSTAL SUBSTRATE AND A SEMICONDUCTOR DEVI...
- Publication number 20140044970
- Publication date Feb 13, 2014
- RICOH COMPANY, LTD.
- Seiji SARAYAMA
- C30 - CRYSTAL GROWTH
Information Patent Application
CRYSTAL GROWTH METHOD, CRYSTAL GROWTH APPARATUS, GROUP-III NITRIDE...
- Publication number 20130330264
- Publication date Dec 12, 2013
- RICOH COMPANY, LTD.
- Seiji SARAYAMA
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP 13 NITRIDE CRYSTAL AND GROUP 13 NITRIDE CRYSTAL SUBSTRATE
- Publication number 20130243680
- Publication date Sep 19, 2013
- RICOH COMPANY, LITD.
- Masahiro HAYASHI
- C30 - CRYSTAL GROWTH
Information Patent Application
MANUFACTURING METHOD AND MANUFACTURING APPARATUS OF A GROUP III NIT...
- Publication number 20130074762
- Publication date Mar 28, 2013
- Hirokazu Iwata
- C30 - CRYSTAL GROWTH
Information Patent Application
CRYSTAL PRODUCING APPARATUS, CRYSTAL PRODUCING METHOD, SUBSTRATE PR...
- Publication number 20130069078
- Publication date Mar 21, 2013
- Seiji Sarayama
- C30 - CRYSTAL GROWTH
Information Patent Application
GALLIUM NITRIDE CRYSTAL, GROUP 13 NITRIDE CRYSTAL, GROUP 13 NITRIDE...
- Publication number 20130065010
- Publication date Mar 14, 2013
- RICOH COMPANY, LTD.
- Masahiro Hayashi
- C30 - CRYSTAL GROWTH
Information Patent Application
MANUFACTURING METHOD OF GROUP 13 NITRIDE CRYSTAL
- Publication number 20130061799
- Publication date Mar 14, 2013
- RICOH COMPANY, LTD.
- Masahiro HAYASHI
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP 13 NITRIDE CRYSTAL AND SUBSTRATE THEREOF
- Publication number 20130062660
- Publication date Mar 14, 2013
- RICOH COMPANY, LTD.
- Masahiro HAYASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP 13 NITRIDE CRYSTAL SUBSTRATE, MANUFACTURING METHOD OF GROUP 1...
- Publication number 20130065036
- Publication date Mar 14, 2013
- RICOH COMPANY, LTD.
- Masahiro HAYASHI
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP 13 NITRIDE CRYSTAL AND GROUP 13 NITRIDE CRYSTAL SUBSTRATE
- Publication number 20130064749
- Publication date Mar 14, 2013
- RICOH COMPANY, LTD.,
- Masahiro HAYASHI
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP III NITRIDE CRYSTAL AND MANUFACTURING METHOD THEREOF
- Publication number 20130028826
- Publication date Jan 31, 2013
- Hirokazu Iwata
- C30 - CRYSTAL GROWTH
Information Patent Application
CRYSTAL GROWTH APPARATUS AND MANUFACTURING METHOD OF GROUP III NITR...
- Publication number 20120085279
- Publication date Apr 12, 2012
- Seiji Sarayama
- C30 - CRYSTAL GROWTH
Information Patent Application
NITRIDE CRYSTAL AND METHOD FOR PRODUCING THE SAME
- Publication number 20120003446
- Publication date Jan 5, 2012
- OSAKA UNIVERSITY
- Takashi SATOH
- C30 - CRYSTAL GROWTH
Information Patent Application
CRYSTAL PREPARING DEVICE, CRYSTAL PREPARING METHOD, AND CRYSTAL
- Publication number 20110253034
- Publication date Oct 20, 2011
- Hirokazu Iwata
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF GROWING GROUP III NITRIDE CRYSTAL, GROUP III NITRIDE CRYS...
- Publication number 20110012235
- Publication date Jan 20, 2011
- Hirokazu Iwata
- C30 - CRYSTAL GROWTH
Information Patent Application
Crystal Manufacturing Apparatus
- Publication number 20100229787
- Publication date Sep 16, 2010
- Seiji Sarayama
- C30 - CRYSTAL GROWTH

Seiji SARAYAMA

Person

Patents Grantslast 30 patents

Group III nitride crystal substrate having a diameter of 4 inches o...

Method for manufacturing group 13 nitride crystal and group 13 nitr...

Method for producing gallium nitride crystal

Production of a GaN bulk crystal substrate and a semiconductor devi...

Gallium nitride crystal, group 13 nitride crystal, group 13 nitride...

Crystal growth apparatus and manufacturing method of group III nitr...

Group 13 nitride crystal and group 13 nitride crystal substrate

Manufacturing method of group 13 nitride crystal

Manufacturing method and manufacturing apparatus of a group III nit...

Group III nitride crystal and manufacturing method thereof

Crystal manufacturing apparatus

Crystal growth apparatus and manufacturing method of group III nitr...

Group 13 nitride crystal and substrate thereof

Nitride crystal and method for producing the same

Method of producing group III nitride crystal, apparatus for produc...

Crystal producing apparatus, crystal producing method, substrate pr...

Crystal growth apparatus

Production of a GaN bulk crystal substrate and a semiconductor devi...

Crystal growth method, crystal growth apparatus, group-III nitride...

Crystal preparing device, crystal preparing method, and crystal

Crystal producing apparatus, crystal producing method, substrate pr...

Manufacturing method and manufacturing apparatus of a group III nit...

Group III nitride crystal and manufacturing method thereof

Electrophotographic photoreceptor, image forming method using elect...

Crystal growth apparatus and manufacturing method of group III nitr...

Group III nitride crystal, crystal growth process and crystal growt...

Methods of growing a group III nitride crystal

Crystal manufacturing apparatus

Crystal growth method

Production of a GaN bulk crystal substrate and a semiconductor devi...

Patents Applicationslast 30 patents

METHOD OF MANUFACTURING CRYSTAL SUBSTRATE AND CRYSTAL SUBSTRATE

METHOD FOR PRODUCING GROUP 13 NITRIDE SINGLE CRYSTAL AND APPARATUS...

GROUP 13 NITRIDE CRYSTAL SUBSTRATE, MANUFACTURING METHOD OF GROUP 1...

METHOD FOR PRODUCING GALLIUM NITRIDE CRYSTAL

METHOD FOR MANUFACTURING GROUP 13 NITRIDE CRYSTAL AND GROUP 13 NITR...

METHOD AND APPARATUS FOR MANUFACTURING GROUP 13 NITRIDE CRYSTAL

APPARATUS AND METHOD FOR MANUFACTURING GROUP 13 NITRIDE CRYSTAL

CRYSTAL GROWTH APPARATUS AND MANUFACTURING METHOD OF GROUP III NITR...

NITRIDE CRYSTAL AND METHOD FOR PRODUCING THE SAME

GALLIUM NITRIDE CRYSTAL, GROUP 13 NITRIDE CRYSTAL, GROUP 13 NITRIDE...

PRODUCTION OF A GaN BULK CRYSTAL SUBSTRATE AND A SEMICONDUCTOR DEVI...

METHOD FOR PRODUCING GROUP 13 NITRIDE CRYSTAL AND APPARATUS FOR PRO...

GROUP 13 NITRIDE CRYSTAL AND METHOD FOR PRODUCTION OF GROUP 13 NITR...

GROUP 13 NITRIDE CRYSTAL, GROUP 13 NITRIDE CRYSTAL SUBSTRATE, AND M...

PRODUCTION OF A GaN BULK CRYSTAL SUBSTRATE AND A SEMICONDUCTOR DEVI...

CRYSTAL GROWTH METHOD, CRYSTAL GROWTH APPARATUS, GROUP-III NITRIDE...

GROUP 13 NITRIDE CRYSTAL AND GROUP 13 NITRIDE CRYSTAL SUBSTRATE

MANUFACTURING METHOD AND MANUFACTURING APPARATUS OF A GROUP III NIT...

CRYSTAL PRODUCING APPARATUS, CRYSTAL PRODUCING METHOD, SUBSTRATE PR...

GALLIUM NITRIDE CRYSTAL, GROUP 13 NITRIDE CRYSTAL, GROUP 13 NITRIDE...

MANUFACTURING METHOD OF GROUP 13 NITRIDE CRYSTAL

GROUP 13 NITRIDE CRYSTAL AND SUBSTRATE THEREOF

GROUP 13 NITRIDE CRYSTAL SUBSTRATE, MANUFACTURING METHOD OF GROUP 1...

GROUP 13 NITRIDE CRYSTAL AND GROUP 13 NITRIDE CRYSTAL SUBSTRATE

GROUP III NITRIDE CRYSTAL AND MANUFACTURING METHOD THEREOF

CRYSTAL GROWTH APPARATUS AND MANUFACTURING METHOD OF GROUP III NITR...

NITRIDE CRYSTAL AND METHOD FOR PRODUCING THE SAME

CRYSTAL PREPARING DEVICE, CRYSTAL PREPARING METHOD, AND CRYSTAL

METHOD OF GROWING GROUP III NITRIDE CRYSTAL, GROUP III NITRIDE CRYS...

Crystal Manufacturing Apparatus