Seikoh Yoshida

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Field effect transistor having semiconductor operating layer formed...
- Patent number 9,048,302
- Issue date Jun 2, 2015
- The Furukawa Electric Co., Ltd.
- Yoshihiro Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN-based semiconductor element
- Patent number 8,729,603
- Issue date May 20, 2014
- Furukawa Electric Co., Ltd.
- Nariaki Ikeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 8,525,225
- Issue date Sep 3, 2013
- The Furukawa Electric Co., Ltd.
- Hiroshi Kambayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor having MOS structure made of nitride compou...
- Patent number 8,421,182
- Issue date Apr 16, 2013
- Furukawa Electric Co., Ltd.
- Takehiko Nomura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor and method of manufacturing the same
- Patent number 8,350,293
- Issue date Jan 8, 2013
- Furukawa Electric Co., Ltd.
- Tat-Sing Paul Chow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN-based semiconductor device and method of manufacturing the same
- Patent number 8,304,809
- Issue date Nov 6, 2012
- Furukawa Electric Co., Ltd.
- Shusuke Kaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN semiconductor device having a high withstand voltage
- Patent number 8,183,597
- Issue date May 22, 2012
- Furukawa Electric Co., Ltd.
- Nariaki Ikeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN-based semiconductor element
- Patent number 8,178,898
- Issue date May 15, 2012
- Furukawa Electric Co., Ltd.
- Nariaki Ikeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 8,134,181
- Issue date Mar 13, 2012
- Furukawa Electric Co., Ltd.
- Yoshihiro Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Normally-off field effect transistor using III-nitride semiconducto...
- Patent number 8,093,626
- Issue date Jan 10, 2012
- Furukawa Electric Co., Ltd.
- Yuki Niiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor
- Patent number 8,072,002
- Issue date Dec 6, 2011
- Furukawa Electric Co., Ltd.
- Yuki Niyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing field effect transistor
- Patent number 7,998,848
- Issue date Aug 16, 2011
- Furukawa Electric Co., Ltd.
- Yuki Niiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing semiconductor device using optical absorption...
- Patent number 7,855,155
- Issue date Dec 21, 2010
- Furukawa Electric Co., Ltd.
- Yuki Niiyama
- B82 - NANO-TECHNOLOGY
Information Patent Grant
ED inverter circuit and integrate circuit element including the same
- Patent number 7,821,035
- Issue date Oct 26, 2010
- The Furukawa Electric Co., Ltd.
- Takehiko Nomura
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
GaN based semiconductor element
- Patent number 7,812,371
- Issue date Oct 12, 2010
- Furukawa Electric Co., Ltd.
- Shusuke Kaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor heterojunction field effect transistor
- Patent number 7,723,752
- Issue date May 25, 2010
- The Furukawa Electric Co., Ltd.
- Seikoh Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-based compound semiconductor electron device including a bu...
- Patent number 7,329,908
- Issue date Feb 12, 2008
- The Furukawa Electric Co., Ltd.
- Seikoh Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN-based field effect transistor of a normally-off type
- Patent number 7,038,253
- Issue date May 2, 2006
- The Furukawa Electric Co., Ltd.
- Seikoh Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor and manufacturing method therefor
- Patent number 6,897,495
- Issue date May 24, 2005
- The Furukawa Electric Co., Ltd.
- Seikoh Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V nitride semiconductor device, and protection element and powe...
- Patent number 6,768,146
- Issue date Jul 27, 2004
- The Furukawa Electric Co., Ltd.
- Seikoh Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN-based semiconductor device
- Patent number 6,674,101
- Issue date Jan 6, 2004
- Seikoh Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN-based compound semiconductor device
- Patent number 6,580,101
- Issue date Jun 17, 2003
- The Furukawa Electric Co., Ltd.
- Seikoh Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and GaN-based field effect transistor for use...
- Patent number 6,576,927
- Issue date Jun 10, 2003
- The Furukawa Electric Co., Ltd.
- Seikoh Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN-based high electron mobility transistor
- Patent number 6,534,801
- Issue date Mar 18, 2003
- The Furukawa Electric Co., Ltd.
- Seikoh Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN-type semiconductor vertical field effect transistor
- Patent number 6,396,085
- Issue date May 28, 2002
- The Furukawa Electric Co., Ltd.
- Seikoh Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V nitride semiconductor devices and process for the production...
- Patent number 6,255,004
- Issue date Jul 3, 2001
- The Furukawa Electric Co., Ltd.
- Seikoh Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of growing single crystal of compound semiconductors
- Patent number 5,379,717
- Issue date Jan 10, 1995
- The Furukawa Electric Co., Ltd.
- Seikoh Yoshida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of growing single crystal of compound semiconductor
- Patent number 5,342,475
- Issue date Aug 30, 1994
- The Furukawa Electric Co., Ltd.
- Seikoh Yoshida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for growing compound semiconductor crystal
- Patent number 4,853,066
- Issue date Aug 1, 1989
- Furukawa Electric Co., Ltd.
- Seikoh Yoshida
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
GaN-BASED SEMICONDUCTOR ELEMENT
- Publication number 20120193639
- Publication date Aug 2, 2012
- FURUKAWA ELECTRIC CO., LTD.
- Nariaki IKEDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Normally-off field effect transistor using III-nitride semiconducto...
- Publication number 20100283083
- Publication date Nov 11, 2010
- Yuki Niiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR
- Publication number 20100219455
- Publication date Sep 2, 2010
- Yuki Niiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
- Publication number 20100219451
- Publication date Sep 2, 2010
- Tat-Sing Paul Chow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
- Publication number 20100127307
- Publication date May 27, 2010
- Takehiko Nomura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20100032716
- Publication date Feb 11, 2010
- Yoshihiro Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN-BASED SEMICONDUCTOR ELEMENT
- Publication number 20100032683
- Publication date Feb 11, 2010
- Nariaki Ikeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for producing semiconductor device
- Publication number 20090325339
- Publication date Dec 31, 2009
- Yuki Niiyama
- B82 - NANO-TECHNOLOGY
Information Patent Application
GaN based semiconductor element
- Publication number 20090278172
- Publication date Nov 12, 2009
- Shusuke Kaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ED INVERTER CIRCUIT AND INTEGRATE CIRCUIT ELEMENT INCLUDING THE SAME
- Publication number 20090250767
- Publication date Oct 8, 2009
- THE FURUKAWA ELECTRIC CO., LTD.
- Takehiko Nomura
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Method of producing field effect transistor
- Publication number 20090246924
- Publication date Oct 1, 2009
- Yuki NIIYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field effect transistor
- Publication number 20090242938
- Publication date Oct 1, 2009
- Yuki Niiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field effect transister and process for producing the same
- Publication number 20090194790
- Publication date Aug 6, 2009
- Yoshihiro Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN-based semiconductor device and method of manufacturing the same
- Publication number 20090140295
- Publication date Jun 4, 2009
- Shusuke Kaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitride semiconductor heterojunction field effect transistor
- Publication number 20080135880
- Publication date Jun 12, 2008
- THE FURUKAWA ELECTRIC CO., LTD.
- Seikoh YOSHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF FORMING ELECTRODE
- Publication number 20080006846
- Publication date Jan 10, 2008
- The Furukawa Electric Co, Ltd.
- Nariaki Ikeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN SEMICONDUCTOR DEVICE
- Publication number 20070210335
- Publication date Sep 13, 2007
- THE FURUKAWA ELECTRIC CO., LTD.
- Nariaki Ikeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20070051979
- Publication date Mar 8, 2007
- The Furukawa Electric Co, Ltd.
- Hiroshi Kambayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor electronic device
- Publication number 20070045639
- Publication date Mar 1, 2007
- THE FURUKAWA ELECTRIC CO., LTD.
- Sadahiro Kato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN-based semiconductor integrated circuit
- Publication number 20060081897
- Publication date Apr 20, 2006
- THE FURUKAWA ELECTRIC CO., LTD.
- Seikoh Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitride-based compound semiconductor electron device
- Publication number 20050051804
- Publication date Mar 10, 2005
- The Furukawa Electric CO., LTD
- Seikoh Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN-based field effect transistor
- Publication number 20050023555
- Publication date Feb 3, 2005
- The Furukawa Electric CO., LTD
- Seikoh Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V nitride semiconductor device, and protection element and powe...
- Publication number 20030098462
- Publication date May 29, 2003
- THE FURUKAWA ELECTRIC CO., LTD.
- Seikoh Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field effect transistor and manufacturing method therefor
- Publication number 20030082860
- Publication date May 1, 2003
- Seikoh Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN-based semiconductor device
- Publication number 20020182791
- Publication date Dec 5, 2002
- Seikoh Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN-based light emitting device
- Publication number 20020136932
- Publication date Sep 26, 2002
- Seikoh Yoshida
- B82 - NANO-TECHNOLOGY
Information Patent Application
Semiconductor device and GaN-based field effect transistor for use...
- Publication number 20020125506
- Publication date Sep 12, 2002
- Seikoh Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN-based high electron mobility transistor
- Publication number 20020079508
- Publication date Jun 27, 2002
- THE FURUKAWA ELECTRIC CO., LTD.
- Seikoh Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN-based compound semiconductor device
- Publication number 20010032999
- Publication date Oct 25, 2001
- Seikoh Yoshida
- H01 - BASIC ELECTRIC ELEMENTS

Seikoh Yoshida

Person

Patents Grantslast 30 patents

Field effect transistor having semiconductor operating layer formed...

GaN-based semiconductor element

Semiconductor device

Field effect transistor having MOS structure made of nitride compou...

Field effect transistor and method of manufacturing the same

GaN-based semiconductor device and method of manufacturing the same

GaN semiconductor device having a high withstand voltage

GaN-based semiconductor element

Semiconductor device

Normally-off field effect transistor using III-nitride semiconducto...

Field effect transistor

Method of producing field effect transistor

Process for producing semiconductor device using optical absorption...

ED inverter circuit and integrate circuit element including the same

GaN based semiconductor element

Nitride semiconductor heterojunction field effect transistor

Nitride-based compound semiconductor electron device including a bu...

GaN-based field effect transistor of a normally-off type

Field effect transistor and manufacturing method therefor

III-V nitride semiconductor device, and protection element and powe...

GaN-based semiconductor device

GaN-based compound semiconductor device

Semiconductor device and GaN-based field effect transistor for use...

GaN-based high electron mobility transistor

GaN-type semiconductor vertical field effect transistor

III-V nitride semiconductor devices and process for the production...

Method of growing single crystal of compound semiconductors

Method of growing single crystal of compound semiconductor

Method for growing compound semiconductor crystal

Patents Applicationslast 30 patents

GaN-BASED SEMICONDUCTOR ELEMENT

Normally-off field effect transistor using III-nitride semiconducto...

III-NITRIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR

FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE

GaN-BASED SEMICONDUCTOR ELEMENT

Process for producing semiconductor device

GaN based semiconductor element

ED INVERTER CIRCUIT AND INTEGRATE CIRCUIT ELEMENT INCLUDING THE SAME

Method of producing field effect transistor

Field effect transistor

Field effect transister and process for producing the same

GaN-based semiconductor device and method of manufacturing the same

Nitride semiconductor heterojunction field effect transistor

III-V NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF FORMING ELECTRODE

GaN SEMICONDUCTOR DEVICE

Semiconductor device

Semiconductor electronic device

GaN-based semiconductor integrated circuit

Nitride-based compound semiconductor electron device

GaN-based field effect transistor

III-V nitride semiconductor device, and protection element and powe...

Field effect transistor and manufacturing method therefor

GaN-based semiconductor device

GaN-based light emitting device

Semiconductor device and GaN-based field effect transistor for use...

GaN-based high electron mobility transistor

GaN-based compound semiconductor device