Seung-Chul Song

Person

Austin, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Replacement metal gate process for CMOS integrated circuits
- Patent number 10,879,133
- Issue date Dec 29, 2020
- Texas Instruments Incorporated
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-power 5T SRAM with improved stability and reduced bitcell size
- Patent number 9,875,788
- Issue date Jan 23, 2018
- QUALCOMM Incorporated
- Seong-Ook Jung
- G11 - INFORMATION STORAGE
Information Patent Grant
Stable SRAM bitcell design utilizing independent gate FinFET
- Patent number 9,865,330
- Issue date Jan 9, 2018
- QUALCOMM Incorporated
- Seong-Ook Jung
- G11 - INFORMATION STORAGE
Information Patent Grant
Inner L-spacer for replacement gate flow
- Patent number 9,768,078
- Issue date Sep 19, 2017
- Texas Instruments Incorporated
- Chet Vernon Lenox
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of CMOS manufacturing utilizing multi-layer epitaxial hardma...
- Patent number 9,659,825
- Issue date May 23, 2017
- Texas Instruments Incorporated
- Deborah Jean Riley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inner L-spacer for replacement gate flow
- Patent number 9,362,375
- Issue date Jun 7, 2016
- Texas Instruments Incorporated
- Chet Vernon Lenox
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method to fabricate an electronic device
- Patent number 9,337,100
- Issue date May 10, 2016
- QUALCOMM Incorporated
- Seung-Chul Song
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of CMOS manufacturing utilizing multi-layer epitaxial hardma...
- Patent number 9,224,656
- Issue date Dec 29, 2015
- Texas Instruments Incorporated
- Deborah Jean Riley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Raised source/drain MOS transistor and method of forming the transi...
- Patent number 9,178,038
- Issue date Nov 3, 2015
- Texas Instruments Incorporated
- Seung-Chul Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inner L-spacer for replacement gate flow
- Patent number 9,178,037
- Issue date Nov 3, 2015
- Texas Instruments Incorporated
- Chet Vernon Lenox
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of CMOS manufacturing utilizing multi-layer epitaxial hardma...
- Patent number 9,093,555
- Issue date Jul 28, 2015
- Texas Instruments Incorporated
- Deborah Jean Riley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inner L-spacer for replacement gate flow
- Patent number 9,087,917
- Issue date Jul 21, 2015
- Texas Instruments Incorporated
- Chet Vernon Lenox
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement metal gate process for CMOS integrated circuits
- Patent number 8,803,253
- Issue date Aug 12, 2014
- Texas Instruments Incorporated
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-type device system and method
- Patent number 8,796,777
- Issue date Aug 5, 2014
- QUALCOMM Incorporated
- Seung-Chul Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a CMOS device with a stressed-channel NMOS transi...
- Patent number 8,691,644
- Issue date Apr 8, 2014
- Texas Instruments Incorporated
- Seung-Chul Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Static noise margin estimation
- Patent number 8,447,547
- Issue date May 21, 2013
- QUALCOMM Incorporated
- Seong-Ook Jung
- G11 - INFORMATION STORAGE
Information Patent Grant
Dual metal gates using one metal to alter work function of another...
- Patent number 8,236,686
- Issue date Aug 7, 2012
- International Business Machines Corporation
- Byoung H. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method to read and write data a magnetic tunnel junction...
- Patent number 8,130,534
- Issue date Mar 6, 2012
- QUALCOMM Incorporated
- Mohamed Hassan Abu-Rahma
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of fabricating a fin field effect transistor (FinFET) device
- Patent number 7,829,951
- Issue date Nov 9, 2010
- QUALCOMM Incorporated
- Seung-Chul Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems and methods for fabricating nanometric-scale semiconductor...
- Patent number 7,741,168
- Issue date Jun 22, 2010
- Sematech, Inc.
- Seung-Chul Song
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INNER L-SPACER FOR REPLACEMENT GATE FLOW
- Publication number 20160254197
- Publication date Sep 1, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Chet Vernon LENOX
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS TO TUNE THRESHOLD VOLTAGE OF DEVICE WITH HIGH...
- Publication number 20160172443
- Publication date Jun 16, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Younsung Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INNER L-SPACER FOR REPLACEMENT GATE FLOW
- Publication number 20150311304
- Publication date Oct 29, 2015
- TEXAS INSTRUMENTS INCORPORATED
- Chet Vernon LENOX
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF CMOS MANUFACTURING UTILIZING MULTI-LAYER EPITAXIAL HARDMA...
- Publication number 20150287647
- Publication date Oct 8, 2015
- TEXAS INSTRUMENTS INCORPORATED
- Deborah Jean RILEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INNER L-SPACER FOR REPLACEMENT GATE FLOW
- Publication number 20150279966
- Publication date Oct 1, 2015
- TEXAS INSTRUMENTS INCORPORATED
- Chet Vernon LENOX
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RAISED SOURCE/DRAIN MOS TRANSISTOR AND METHOD OF FORMING THE TRANSI...
- Publication number 20150140769
- Publication date May 21, 2015
- TEXAS INSTRUMENTS INCORPORATED
- Seung-Chul Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INNER L-SPACER FOR REPLACEMENT GATE FLOW
- Publication number 20150069516
- Publication date Mar 12, 2015
- TEXAS INSTRUMENTS INCORPORATED
- Chet Vernon LENOX
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF CMOS MANUFACTURING UTILIZING MULTI-LAYER EPITAXIAL HARDMA...
- Publication number 20150031177
- Publication date Jan 29, 2015
- TEXAS INSTRUMENTS INCORPORATED
- Deborah Jean RILEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF CMOS MANUFACTURING UTILIZING MULTI-LAYER EPITAXIAL HARDMA...
- Publication number 20150031178
- Publication date Jan 29, 2015
- TEXAS INSTRUMENTS INCORPORATED
- Deborah Jean RILEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Replacement Metal Gate Process for CMOS Integrated Circuits
- Publication number 20140315361
- Publication date Oct 23, 2014
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Raised Source/Drain MOS Transistor and Method of Forming the Transi...
- Publication number 20140183663
- Publication date Jul 3, 2014
- TEXAS INSTRUMENTS INCORPORATED
- Seung-Chul Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Replacement Metal Gate Process for CMOS Integrated Circuits
- Publication number 20140070327
- Publication date Mar 13, 2014
- TEXAS INSTRUMENTS INCORPORATED
- Hiroaki Niimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming a CMOS Device with a Stressed-Channel NMOS Transi...
- Publication number 20140011340
- Publication date Jan 9, 2014
- Seung-Chul Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL METAL GATES USING ONE METAL TO ALTER WORK FUNCTION OF ANOTHER...
- Publication number 20120256270
- Publication date Oct 11, 2012
- International Business Machines Corporation
- Byoung H. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Stable SRAM Bitcell Design Utilizing Independent Gate Finfet
- Publication number 20120113708
- Publication date May 10, 2012
- Industry-Academic Cooperation Foundation, Yonsei University
- Seong-Ook Jung
- G11 - INFORMATION STORAGE
Information Patent Application
Low-Power 5T SRAM with Improved Stability and Reduced Bitcell Size
- Publication number 20110235406
- Publication date Sep 29, 2011
- QUALCOMM Incorporated
- Seong-Ook Jung
- G11 - INFORMATION STORAGE
Information Patent Application
Fin-Type Device System and Method
- Publication number 20110051535
- Publication date Mar 3, 2011
- QUALCOMM Incorporated
- Seung-Chul Song
- G11 - INFORMATION STORAGE
Information Patent Application
Static Noise Margin Estimation
- Publication number 20100324850
- Publication date Dec 23, 2010
- QUALCOMM Incorporated
- Seong-Ook Jung
- G11 - INFORMATION STORAGE
Information Patent Application
Apparatus and Method to Fabricate an Electronic Device
- Publication number 20100308408
- Publication date Dec 9, 2010
- QUALCOMM Incorporated
- Seung-Chul Song
- B82 - NANO-TECHNOLOGY
Information Patent Application
System And Method To Read And Write Data A Magnetic Tunnel Junction...
- Publication number 20100172173
- Publication date Jul 8, 2010
- QUALCOMM Incorporated
- Mohamed Hassan Abu-Rahma
- G11 - INFORMATION STORAGE
Information Patent Application
Method of Fabricating A Fin Field Effect Transistor (FinFET) Device
- Publication number 20100109086
- Publication date May 6, 2010
- QUALCOMM Incorporated
- Seung-Chul Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL METAL GATES USING ONE METAL TO ALTER WORK FUNCTION OF ANOTHER...
- Publication number 20090294867
- Publication date Dec 3, 2009
- Byoung H. Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Systems And Methods For Fabricating Nanometric-Scale Semiconductor...
- Publication number 20090026548
- Publication date Jan 29, 2009
- Seung-Chul Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dual Metal Gate and Method of Manufacture
- Publication number 20070059874
- Publication date Mar 15, 2007
- SEMATECH, Inc.
- Naim Moumen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for dual metal gate CMOS integration
- Publication number 20070048920
- Publication date Mar 1, 2007
- SEMATECH
- Seung-Chul Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for forming metal-silicon layer using a silicon cap layer
- Publication number 20060270224
- Publication date Nov 30, 2006
- Seung-Chul Song
- H01 - BASIC ELECTRIC ELEMENTS

Seung-Chul Song

Person

Patents Grantslast 30 patents

Replacement metal gate process for CMOS integrated circuits

Low-power 5T SRAM with improved stability and reduced bitcell size

Stable SRAM bitcell design utilizing independent gate FinFET

Inner L-spacer for replacement gate flow

Method of CMOS manufacturing utilizing multi-layer epitaxial hardma...

Inner L-spacer for replacement gate flow

Apparatus and method to fabricate an electronic device

Method of CMOS manufacturing utilizing multi-layer epitaxial hardma...

Raised source/drain MOS transistor and method of forming the transi...

Inner L-spacer for replacement gate flow

Method of CMOS manufacturing utilizing multi-layer epitaxial hardma...

Inner L-spacer for replacement gate flow

Replacement metal gate process for CMOS integrated circuits

Fin-type device system and method

Method of forming a CMOS device with a stressed-channel NMOS transi...

Static noise margin estimation

Dual metal gates using one metal to alter work function of another...

System and method to read and write data a magnetic tunnel junction...

Method of fabricating a fin field effect transistor (FinFET) device

Systems and methods for fabricating nanometric-scale semiconductor...

Patents Applicationslast 30 patents

INNER L-SPACER FOR REPLACEMENT GATE FLOW

METHOD AND APPARATUS TO TUNE THRESHOLD VOLTAGE OF DEVICE WITH HIGH...

INNER L-SPACER FOR REPLACEMENT GATE FLOW

METHOD OF CMOS MANUFACTURING UTILIZING MULTI-LAYER EPITAXIAL HARDMA...

INNER L-SPACER FOR REPLACEMENT GATE FLOW

RAISED SOURCE/DRAIN MOS TRANSISTOR AND METHOD OF FORMING THE TRANSI...

INNER L-SPACER FOR REPLACEMENT GATE FLOW

METHOD OF CMOS MANUFACTURING UTILIZING MULTI-LAYER EPITAXIAL HARDMA...

METHOD OF CMOS MANUFACTURING UTILIZING MULTI-LAYER EPITAXIAL HARDMA...

Replacement Metal Gate Process for CMOS Integrated Circuits

Raised Source/Drain MOS Transistor and Method of Forming the Transi...

Replacement Metal Gate Process for CMOS Integrated Circuits

Method of Forming a CMOS Device with a Stressed-Channel NMOS Transi...

DUAL METAL GATES USING ONE METAL TO ALTER WORK FUNCTION OF ANOTHER...

Stable SRAM Bitcell Design Utilizing Independent Gate Finfet

Low-Power 5T SRAM with Improved Stability and Reduced Bitcell Size

Fin-Type Device System and Method

Static Noise Margin Estimation

Apparatus and Method to Fabricate an Electronic Device

System And Method To Read And Write Data A Magnetic Tunnel Junction...

Method of Fabricating A Fin Field Effect Transistor (FinFET) Device

DUAL METAL GATES USING ONE METAL TO ALTER WORK FUNCTION OF ANOTHER...

Systems And Methods For Fabricating Nanometric-Scale Semiconductor...

Dual Metal Gate and Method of Manufacture

Methods for dual metal gate CMOS integration

Methods for forming metal-silicon layer using a silicon cap layer