Shang-Jr Gwo

Person

Hsinchu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Two-dimensional material plasmonic laser
- Patent number 10,348,058
- Issue date Jul 9, 2019
- National Tsing Hua University
- Shang-Jr Gwo
- G02 - OPTICS
Information Patent Grant
Acetone gas sensor apparatus
- Patent number 8,950,240
- Issue date Feb 10, 2015
- National Tsing Hua University
- Jer-Liang Andrew Yeh
- G01 - MEASURING TESTING
Information Patent Grant
Light-emitting diode display and method of producing the same
- Patent number 8,835,903
- Issue date Sep 16, 2014
- National Tsing Hua University
- Shang-Jr Gwo
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of producing III-nitride light-emitting diode
- Patent number 8,669,128
- Issue date Mar 11, 2014
- National Tsing Hua University
- Shang-Jr Gwo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanoparticle film and forming method and application thereof
- Patent number 8,309,185
- Issue date Nov 13, 2012
- National Tsing Hua University
- Meng-Hsien Lin
- B82 - NANO-TECHNOLOGY
Information Patent Grant
III-Nitride light-emitting diode and method of producing the same
- Patent number 8,242,523
- Issue date Aug 14, 2012
- National Tsing Hua University
- Shang-Jr Gwo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion sensitive field effect transistor and production method thereof
- Patent number 8,008,691
- Issue date Aug 30, 2011
- National Tsing Hua University
- Jer-Liang Andrew Yeh
- G01 - MEASURING TESTING
Information Patent Grant
Group-III nitride vertical-rods substrate
- Patent number 7,709,823
- Issue date May 4, 2010
- Industrial Technology Research Institute
- Chih-Ming Lai
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TWO-DIMENSIONAL MATERIAL PLASMONIC LASER
- Publication number 20190229498
- Publication date Jul 25, 2019
- National Tsing Hua University
- Shang-Jr Gwo
- G02 - OPTICS
Information Patent Application
SERS SUBSTRATE
- Publication number 20170261434
- Publication date Sep 14, 2017
- National Tsing Hua University
- Shang-Jr Gwo
- G01 - MEASURING TESTING
Information Patent Application
ACETONE GAS SENSOR APPARATUS
- Publication number 20130259748
- Publication date Oct 3, 2013
- Jer-Liang Andrew Yeh
- G01 - MEASURING TESTING
Information Patent Application
LIGHT-EMITTING DIODE DISPLAY AND METHOD OF PRODUCING THE SAME
- Publication number 20120223289
- Publication date Sep 6, 2012
- National Tsing Hua University
- Shang-Jr GWO
- B82 - NANO-TECHNOLOGY
Information Patent Application
III-NITRIDE LIGHT-EMITTING DIODE AND METHOD OF PRODUCING THE SAME
- Publication number 20120097920
- Publication date Apr 26, 2012
- Shang-Jr GWO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE LIGHT-EMITTING DIODE AND METHOD OF PRODUCING THE SAME
- Publication number 20120025232
- Publication date Feb 2, 2012
- National Tsing Hua University
- Shang-Jr GWO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOPARTICLE FILM AND FORMING METHOD AND APPLICATION THEREOF
- Publication number 20110274913
- Publication date Nov 10, 2011
- National Tsing Hua University
- Meng-Hsien LIN
- B82 - NANO-TECHNOLOGY
Information Patent Application
ION SENSITIVE FIELD EFFECT TRANSISTOR AND PRODUCTION METHOD THEREOF
- Publication number 20110018038
- Publication date Jan 27, 2011
- Jer-Liang Andrew YEH
- G01 - MEASURING TESTING
Information Patent Application
METHOD FOR MODIFYING SURFACE IN SELECTIVE AREAS AND METHOD FOR FORM...
- Publication number 20110006035
- Publication date Jan 13, 2011
- National Tsing Hua University
- SHANG-JR GWO
- B82 - NANO-TECHNOLOGY
Information Patent Application
GROUP-III NITRIDE VERTICAL-RODS SUBSTRATE
- Publication number 20070272914
- Publication date Nov 29, 2007
- Industrial Technology Research Institute
- Chih-Ming Lai
- C30 - CRYSTAL GROWTH

Shang-Jr Gwo

Person

Patents Grantslast 30 patents

Two-dimensional material plasmonic laser

Acetone gas sensor apparatus

Light-emitting diode display and method of producing the same

Method of producing III-nitride light-emitting diode

Nanoparticle film and forming method and application thereof

III-Nitride light-emitting diode and method of producing the same

Ion sensitive field effect transistor and production method thereof

Group-III nitride vertical-rods substrate

Patents Applicationslast 30 patents

TWO-DIMENSIONAL MATERIAL PLASMONIC LASER

SERS SUBSTRATE

ACETONE GAS SENSOR APPARATUS

LIGHT-EMITTING DIODE DISPLAY AND METHOD OF PRODUCING THE SAME

III-NITRIDE LIGHT-EMITTING DIODE AND METHOD OF PRODUCING THE SAME

III-NITRIDE LIGHT-EMITTING DIODE AND METHOD OF PRODUCING THE SAME

NANOPARTICLE FILM AND FORMING METHOD AND APPLICATION THEREOF

ION SENSITIVE FIELD EFFECT TRANSISTOR AND PRODUCTION METHOD THEREOF

METHOD FOR MODIFYING SURFACE IN SELECTIVE AREAS AND METHOD FOR FORM...

GROUP-III NITRIDE VERTICAL-RODS SUBSTRATE