Shian-Jyh Lin

Person

Yonghe City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Fuse array structure
- Patent number 11,456,303
- Issue date Sep 27, 2022
- NANYA TECHNOLOGY CORPORATION
- Shian-Jyh Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device
- Patent number 11,114,441
- Issue date Sep 7, 2021
- NANYA TECHNOLOGY CORPORATION
- Shian-Jyh Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device including decoupling capacitor array ar...
- Patent number 10,825,823
- Issue date Nov 3, 2020
- NANYA TECHNOLOGY CORPORATION
- Shian-Jyh Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device including decoupling capacitor array ar...
- Patent number 10,818,592
- Issue date Oct 27, 2020
- NANYA TECHNOLOGY CORPORATION
- Shian-Jyh Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure
- Patent number 10,692,811
- Issue date Jun 23, 2020
- NANYA TECHNOLOGY CORPORATION
- Tsang-Po Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing independent depth-controlled shallow trench...
- Patent number 9,779,957
- Issue date Oct 3, 2017
- NANYA TECHNOLOGY CORP.
- Shian-Jyh Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device capable of reducing influences of adjacent wor...
- Patent number 9,214,571
- Issue date Dec 15, 2015
- Nanya Technology Corp.
- Shian-Jyh Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device capable of reducing influences of adjacent wor...
- Patent number 9,024,377
- Issue date May 5, 2015
- Nanya Technology Corp.
- Shian-Jyh Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of patterning metal alloy material layer having hafnium and...
- Patent number 8,691,705
- Issue date Apr 8, 2014
- Nanya Technology Corporation
- Chih-Wei Huang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of fabricating a semiconductor device with through substrate...
- Patent number 8,202,801
- Issue date Jun 19, 2012
- Nanya Technology Corp.
- Shian-Jyh Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with through substrate via
- Patent number 8,148,824
- Issue date Apr 3, 2012
- Nanya Technology Corp.
- Shian-Jyh Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DRAM cell with double-gate fin-FET, DRAM cell array and fabrication...
- Patent number 8,143,121
- Issue date Mar 27, 2012
- Nanya Technology Corp.
- Shian-Jyh Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device with a length-controllable channel
- Patent number 8,044,449
- Issue date Oct 25, 2011
- Nanya Technology Corporation
- Shian-Jyh Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench-type semiconductor device structure
- Patent number 7,985,998
- Issue date Jul 26, 2011
- Nanya Technology Corp.
- Shian-Jyh Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabricating method thereof
- Patent number 7,955,927
- Issue date Jun 7, 2011
- Nanya Technology Corporation
- Shian-Jyh Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conductive through connection and forming method thereof
- Patent number 7,943,513
- Issue date May 17, 2011
- Nanya Technology Corp.
- Shian-Jyh Lin
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Transistor structure and method of making the same
- Patent number 7,932,555
- Issue date Apr 26, 2011
- Nanya Technology Corp.
- Pei-Ing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep trench device with single sided connecting structure and fabri...
- Patent number 7,923,325
- Issue date Apr 12, 2011
- Nanya Technology Corporation
- Shian-Jyh Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 7,911,028
- Issue date Mar 22, 2011
- Nanya Technology Corp.
- Shian-Jyh Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a semiconductor device
- Patent number 7,803,701
- Issue date Sep 28, 2010
- Nanya Technology Corporation
- Shian-Jyh Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrical device and method for fabricating the same
- Patent number 7,795,090
- Issue date Sep 14, 2010
- Nanya Technology Corp.
- Shian-Jyh Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating deep trench DRAM array
- Patent number 7,700,435
- Issue date Apr 20, 2010
- Nanya Technology Corp.
- Shian-Jyh Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating recessed gate MOS transistor device
- Patent number 7,679,137
- Issue date Mar 16, 2010
- Nanya Technology Corp.
- Pei-Ing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Raised vertical channel transistor device
- Patent number 7,675,109
- Issue date Mar 9, 2010
- Nanya Technology Corp.
- Shian-Jyh Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device and fabrication method thereof
- Patent number 7,638,391
- Issue date Dec 29, 2009
- Nanya Technology Corporation
- Chien-Li Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and the forming method thereof
- Patent number 7,622,381
- Issue date Nov 24, 2009
- Nanya Technology Corp.
- Jar-Ming Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep trench device with single sided connecting structure and fabri...
- Patent number 7,619,271
- Issue date Nov 17, 2009
- Nanya Technology Corporation
- Shian-Jyh Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a recessed-gate MOS transistor device
- Patent number 7,592,229
- Issue date Sep 22, 2009
- Nanya Technology Corp.
- Shian-Jyh Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to define a transistor gate of a DRAM and the transistor gat...
- Patent number 7,588,984
- Issue date Sep 15, 2009
- Nanya Technology Corporation
- Yu-Pi Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating memory device with recess channel MOS transi...
- Patent number 7,579,234
- Issue date Aug 25, 2009
- Nanya Technology Corp.
- Shian-Jyh Lin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FUSE ARRAY STRUCTURE
- Publication number 20220085034
- Publication date Mar 17, 2022
- NANYA TECHNOLOGY CORPORATION
- Shian-Jyh LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE INCLUDING DECOUPLING CAPACITOR ARRAY AR...
- Publication number 20200343253
- Publication date Oct 29, 2020
- NANYA TECHNOLOGY CORPORATION
- Shian-Jyh LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE INCLUDING DECOUPLING CAPACITOR ARRAY AR...
- Publication number 20200343182
- Publication date Oct 29, 2020
- NANYA TECHNOLOGY CORPORATION
- Shian-Jyh LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FUSE ARRAY STRUCTURE
- Publication number 20200212049
- Publication date Jul 2, 2020
- NANYA TECHNOLOGY CORPORATION
- Shian-Jyh LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20200176381
- Publication date Jun 4, 2020
- NANYA TECHNOLOGY CORPORATION
- Tsang-Po YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE CAPABLE OF REDUCING INFLUENCES OF ADJACENT WOR...
- Publication number 20150179822
- Publication date Jun 25, 2015
- Nanya Technology Corp.
- Shian-Jyh Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE
- Publication number 20140342567
- Publication date Nov 20, 2014
- Shian-Jyh Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY ARRAY STRUCTURE
- Publication number 20140070359
- Publication date Mar 13, 2014
- Shian-Jyh Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD OF MANUFACTURING MEMORY STRUCTURE
- Publication number 20140036565
- Publication date Feb 6, 2014
- NANYA TECHNOLOGY CORPORATION
- Shian Jyh Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD FOR MANUFACTURING MEMORY DEVICE
- Publication number 20130299884
- Publication date Nov 14, 2013
- NANYA TECHNOLOGY CORPORATION
- Shian Jyh Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE AND METHOD FOR MANUFACTURING MEMORY DEVICE
- Publication number 20130302968
- Publication date Nov 14, 2013
- SHIAN JYH LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE CAPABLE OF REDUCING INFLUENCES OF ADJACENT WOR...
- Publication number 20130153982
- Publication date Jun 20, 2013
- Shian-Jyh Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH THROUGH SUBSTRATE VIA
- Publication number 20120142187
- Publication date Jun 7, 2012
- Shian-Jyh Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THROUGH-SUBSTRATE VIA AND FABRICATION METHOD THEREOF
- Publication number 20110260297
- Publication date Oct 27, 2011
- Shian-Jyh Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH THROUGH SUBSTRATE VIA
- Publication number 20110254169
- Publication date Oct 20, 2011
- Shian-Jyh Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PATTERNING METAL ALLOY MATERIAL LAYER HAVING HAFNIUM AND...
- Publication number 20110226736
- Publication date Sep 22, 2011
- NANYA TECHNOLOGY CORPORATION
- Chih-Wei Huang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
DRAM CELL WITH DOUBLE-GATE FIN-FET, DRAM CELL ARRAY AND FABRICATION...
- Publication number 20110079836
- Publication date Apr 7, 2011
- Shian-Jyh Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE AND MEMORY ARRAY
- Publication number 20110042722
- Publication date Feb 24, 2011
- NANYA TECHNOLOGY CORP
- Shing Hwa Renn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONDUCTIVE THROUGH CONNECTION AND FORMING METHOD THEREOF
- Publication number 20100258917
- Publication date Oct 14, 2010
- NANYA TECHNOLOGY CORP.
- Shian-Jyh Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20100025815
- Publication date Feb 4, 2010
- Shian-Jyh Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE AND METHOD OF MAKING THE SAME
- Publication number 20100025778
- Publication date Feb 4, 2010
- Chao-Sung Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEEP TRENCH DEVICE WITH SINGLE SIDED CONNECTING STRUCTURE AND FABRI...
- Publication number 20100022065
- Publication date Jan 28, 2010
- NANYA TECHNOLOGY CORPORATION
- Shian-Jyh Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE WITH A LENGTH-CONTROLLABLE CHANNEL
- Publication number 20090166703
- Publication date Jul 2, 2009
- NANYA TECHNOLOGY CORPORATION
- Shian-Jyh LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH-TYPE SEMICONDUCTOR DEVICE STRUCTURE
- Publication number 20090166702
- Publication date Jul 2, 2009
- NANYA Technology Corp.
- Shian-Jyh LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCHANT FOR METAL ALLOY HAVING HAFNIUM AND MOLYBDENUM
- Publication number 20090146101
- Publication date Jun 11, 2009
- NANYA TECHNOLOGY CORPORATION
- Chih-Wei Huang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF FORMING FINFET DEVICE
- Publication number 20090137093
- Publication date May 28, 2009
- NANYA Technology Corp.
- Shian-Jyh LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RECESSED CHANNEL DEVICE AND METHOD THEREOF
- Publication number 20090134442
- Publication date May 28, 2009
- NANYA Technology Corp.
- Shian-Jyh Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING DEEP TRENCH DRAM ARRAY
- Publication number 20090104747
- Publication date Apr 23, 2009
- Shian-Jyh Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING SELF-ALIGNED RECESS GATE TRENCH
- Publication number 20090104748
- Publication date Apr 23, 2009
- Shian-Jyh Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RAISED VERTICAL CHANNEL TRANSISTOR DEVICE
- Publication number 20090065857
- Publication date Mar 12, 2009
- Shian-Jyh Lin
- H01 - BASIC ELECTRIC ELEMENTS

Shian-Jyh Lin

Person

Patents Grantslast 30 patents

Fuse array structure

Semiconductor memory device

Semiconductor memory device including decoupling capacitor array ar...

Semiconductor memory device including decoupling capacitor array ar...

Semiconductor structure

Method of manufacturing independent depth-controlled shallow trench...

Semiconductor device capable of reducing influences of adjacent wor...

Semiconductor device capable of reducing influences of adjacent wor...

Method of patterning metal alloy material layer having hafnium and...

Method of fabricating a semiconductor device with through substrate...

Semiconductor device with through substrate via

DRAM cell with double-gate fin-FET, DRAM cell array and fabrication...

Memory device with a length-controllable channel

Trench-type semiconductor device structure

Semiconductor device and fabricating method thereof

Conductive through connection and forming method thereof

Transistor structure and method of making the same

Deep trench device with single sided connecting structure and fabri...

Semiconductor device and method of manufacturing the same

Method for fabricating a semiconductor device

Electrical device and method for fabricating the same

Method for fabricating deep trench DRAM array

Method for fabricating recessed gate MOS transistor device

Raised vertical channel transistor device

Semiconductor memory device and fabrication method thereof

Semiconductor structure and the forming method thereof

Deep trench device with single sided connecting structure and fabri...

Method for fabricating a recessed-gate MOS transistor device

Method to define a transistor gate of a DRAM and the transistor gat...

Method for fabricating memory device with recess channel MOS transi...

Patents Applicationslast 30 patents

FUSE ARRAY STRUCTURE

SEMICONDUCTOR MEMORY DEVICE INCLUDING DECOUPLING CAPACITOR ARRAY AR...

SEMICONDUCTOR MEMORY DEVICE INCLUDING DECOUPLING CAPACITOR ARRAY AR...

FUSE ARRAY STRUCTURE

SEMICONDUCTOR STRUCTURE

SEMICONDUCTOR DEVICE CAPABLE OF REDUCING INFLUENCES OF ADJACENT WOR...

METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE

SEMICONDUCTOR MEMORY ARRAY STRUCTURE

MEMORY DEVICE AND METHOD OF MANUFACTURING MEMORY STRUCTURE

MEMORY DEVICE AND METHOD FOR MANUFACTURING MEMORY DEVICE

MEMORY DEVICE AND METHOD FOR MANUFACTURING MEMORY DEVICE

SEMICONDUCTOR DEVICE CAPABLE OF REDUCING INFLUENCES OF ADJACENT WOR...

SEMICONDUCTOR DEVICE WITH THROUGH SUBSTRATE VIA

THROUGH-SUBSTRATE VIA AND FABRICATION METHOD THEREOF

SEMICONDUCTOR DEVICE WITH THROUGH SUBSTRATE VIA

METHOD OF PATTERNING METAL ALLOY MATERIAL LAYER HAVING HAFNIUM AND...

DRAM CELL WITH DOUBLE-GATE FIN-FET, DRAM CELL ARRAY AND FABRICATION...

INTEGRATED CIRCUIT STRUCTURE AND MEMORY ARRAY

CONDUCTIVE THROUGH CONNECTION AND FORMING METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

TRANSISTOR STRUCTURE AND METHOD OF MAKING THE SAME

DEEP TRENCH DEVICE WITH SINGLE SIDED CONNECTING STRUCTURE AND FABRI...

MEMORY DEVICE WITH A LENGTH-CONTROLLABLE CHANNEL

TRENCH-TYPE SEMICONDUCTOR DEVICE STRUCTURE

ETCHANT FOR METAL ALLOY HAVING HAFNIUM AND MOLYBDENUM

METHOD OF FORMING FINFET DEVICE

RECESSED CHANNEL DEVICE AND METHOD THEREOF

METHOD FOR FABRICATING DEEP TRENCH DRAM ARRAY

METHOD FOR FABRICATING SELF-ALIGNED RECESS GATE TRENCH

RAISED VERTICAL CHANNEL TRANSISTOR DEVICE