Shigeo Onishi

Person

Nara, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device producing method and semiconductor device
- Patent number 6,881,643
- Issue date Apr 19, 2005
- Sharp Kabushiki Kaisha
- Shigeo Onishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device with amorphous diffusion barrier betwee...
- Patent number 5,965,942
- Issue date Oct 12, 1999
- Sharp Kabushiki Kaisha
- Yasuyuki Itoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of electrode
- Patent number 5,858,851
- Issue date Jan 12, 1999
- Sharp Kabushiki Kaisha
- Satoru Yamagata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for fabricating nonvolatile semiconductor memory device hav...
- Patent number 5,854,104
- Issue date Dec 29, 1998
- Sharp Kabushiki Kaisha
- Shigeo Onishi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for etching ferroelectric film
- Patent number 5,776,356
- Issue date Jul 7, 1998
- Sharp Kabushiki Kaisha
- Seiichi Yokoyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile random access memory
- Patent number 5,708,284
- Issue date Jan 13, 1998
- Sharp Kabushiki Kaisha
- Shigeo Onishi
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile random access memory and fabrication method thereof
- Patent number 5,638,319
- Issue date Jun 10, 1997
- Sharp Kabushiki Kaisha
- Shigeo Onishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for etching PT film
- Patent number 5,515,984
- Issue date May 14, 1996
- Sharp Kabushiki Kaisha
- Seiichi Yokoyama
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Crystallizing method of ferroelectric film
- Patent number 5,443,030
- Issue date Aug 22, 1995
- Sharp Kabushiki Kaisha
- Kazuya Ishihara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing semiconductor device comprising two step anne...
- Patent number 5,420,079
- Issue date May 30, 1995
- Sharp Kabushiki Kaisha
- Shigeo Onishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile random access memory with ferroelectric capacitor
- Patent number 5,416,735
- Issue date May 16, 1995
- Sharp Kabushiki Kaisha
- Shigeo Onishi
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile random access memory having a high load device
- Patent number 5,414,653
- Issue date May 9, 1995
- Sharp Kabushiki Kaisha
- Shigeo Onishi
- G11 - INFORMATION STORAGE
Information Patent Grant
Driving circuit of a ferroelectric memory device and a method for d...
- Patent number 5,414,654
- Issue date May 9, 1995
- Sharp Kabushiki Kaisha
- Yasushi Kubota
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of forming a ferroelectric film
- Patent number 5,397,446
- Issue date Mar 14, 1995
- Sharp Kabushiki Kaisha
- Kazuya Ishihara
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Dynamic random access memory
- Patent number 5,383,151
- Issue date Jan 17, 1995
- Sharp Kabushiki Kaisha
- Shigeo Onishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a titanium thin film
- Patent number 5,379,718
- Issue date Jan 10, 1995
- Sharp Kabushiki Kaisha
- Shigeo Onishi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor memory device having two transistors and at least one...
- Patent number 5,357,460
- Issue date Oct 18, 1994
- Sharp Kabushiki Kaisha
- Tatsushi Yusuki
- G11 - INFORMATION STORAGE
Information Patent Grant
Process for manufacturing a semiconductor device including heat tre...
- Patent number 5,348,900
- Issue date Sep 20, 1994
- Sharp Kabushiki Kaisha
- Akitsu Ayukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor device
- Patent number 5,322,810
- Issue date Jun 21, 1994
- Sharp Kabushiki Kaisha
- Akitsu Ayukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor device comprising titanium
- Patent number 5,312,774
- Issue date May 17, 1994
- Sharp Kabushiki Kaisha
- Kazuyo Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing semiconductor device
- Patent number 5,298,446
- Issue date Mar 29, 1994
- Sharp Kabushiki Kaisha
- Shigeo Onishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with PZT/PLZT film and lead-containing electrode
- Patent number 5,293,075
- Issue date Mar 8, 1994
- Sharp Kabushiki Kaisha
- Shigeo Onishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor device
- Patent number 5,217,912
- Issue date Jun 8, 1993
- Sharp Kabushiki Kaisha
- Akitsu Ayukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for preparing a semiconductor device using hydrogen fluorid...
- Patent number 5,200,361
- Issue date Apr 6, 1993
- Sharp Kabushiki Kaisha
- Shigeo Onishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 5,183,770
- Issue date Feb 2, 1993
- Sharp Kabushiki Kaisha
- Akitsu Ayukawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for fabricating a semiconductor device including a tungsten...
- Patent number 5,183,782
- Issue date Feb 2, 1993
- Sharp Kabushiki Kaisha
- Shigeo Onishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming isolation region of semiconductor device
- Patent number 5,139,964
- Issue date Aug 18, 1992
- Sharp Kabushiki Kaisha
- Shigeo Onishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an element isolating portion in a semiconductor d...
- Patent number 5,059,550
- Issue date Oct 22, 1991
- Sharp Kabushiki Kaisha
- Hidehisa Tateoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High resistive element
- Patent number 5,049,970
- Issue date Sep 17, 1991
- Sharp Kabushiki Kaisha
- Kenichi Tanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device by filling and plana...
- Patent number 4,916,087
- Issue date Apr 10, 1990
- Sharp Kabushiki Kaisha
- Hidehisa Tateoka
- H01 - BASIC ELECTRIC ELEMENTS

Shigeo Onishi

Person

Patents Grantslast 30 patents

Semiconductor device producing method and semiconductor device

Semiconductor memory device with amorphous diffusion barrier betwee...

Manufacturing method of electrode

Process for fabricating nonvolatile semiconductor memory device hav...

Method for etching ferroelectric film

Non-volatile random access memory

Non-volatile random access memory and fabrication method thereof

Method for etching PT film

Crystallizing method of ferroelectric film

Process for producing semiconductor device comprising two step anne...

Non-volatile random access memory with ferroelectric capacitor

Non-volatile random access memory having a high load device

Driving circuit of a ferroelectric memory device and a method for d...

Method of forming a ferroelectric film

Dynamic random access memory

Method for forming a titanium thin film

Semiconductor memory device having two transistors and at least one...

Process for manufacturing a semiconductor device including heat tre...

Method for manufacturing a semiconductor device

Method for manufacturing a semiconductor device comprising titanium

Process for producing semiconductor device

Semiconductor device with PZT/PLZT film and lead-containing electrode

Method for manufacturing a semiconductor device

Process for preparing a semiconductor device using hydrogen fluorid...

Semiconductor device

Process for fabricating a semiconductor device including a tungsten...

Method for forming isolation region of semiconductor device

Method of forming an element isolating portion in a semiconductor d...

High resistive element

Method of manufacturing a semiconductor device by filling and plana...